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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Picoseconds-Limited Exciton Recombination in Metal–Organic Chalcogenides Hybrid Quantum Wells

Metal-organic species can be designed to self-assemble in large-scale, atomically defined, supramolecular architectures. Hybrid quantum wells, where inorganic two-dimensional (2D) planes are separated by organic ligands, are a particular example. The ligands effectively provide an intralayer confinement for charge carriers resulting in a 2D electronic structure, even in multilayered assemblies. Air-stable metal organic chalcogenides hybrid quantum wells have recently been found to host tightly bound 2D excitons with strong optical anisotropy in a bulk matrix. Here, we investigate the excited carrier dynamics in the prototypical metal organic chalcogenide [AgSePh] ∞ , disentangling three excitonic resonances by low temperature transient absorption spectroscopy. Our analysis suggests a complex relaxation cascade comprising ultrafast screening and renormalization, inter-exciton relaxation, and self-trapping of excitons within few picoseconds. Finally, the ps-decay provided by the self-trapping mechanism may be leveraged to unlock the material's potential for ultrafast optoelectronic applications.

2D excitons↗
DOE OSTI2020

A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes

Until recently, the electrical efficiency of green nitride light-emitting diodes (LEDs) was considerably lower than that of blue LEDs. This is particularly surprising as one would expect a reduced forward voltage with increasing emission wavelength. In this paper, we theoretically investigated the impact of the number of quantum wells on the forward voltage of III-nitride LEDs with x = 0.15 (blue) and x = 0.24 (green) In x Ga1–xN QWs. The simulated dependence of current density (J) on applied diode bias (V) shows a significant increase of 1.9 V in the forward voltage between one and five quantum well (QW) c-plane green LED structures. Artificially turning off the polarization fields in the simulation does not entirely suppress this effect. Due to the large band offsets in the green LED multiple QW stack, simulations indicate a sequential band filling of the QW sequence. Furthermore, this mechanism should not be limited to c-plane LEDs and could also be present in nonpolar or semipolar devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells

Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocations and V-defects does not play a decisive role in the overall nonradiative recombination and internal quantum efficiency of polar InGaN/GaN QWs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

In this work, we report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing top and bottom gates, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor v T =1 and v T =2 are observed in both density regimes, and the evolution of their excitation gaps is reported as a function of the density. The v T =1 gap evolution departs from the behavior generally observed for valley splitting in the single layer regime. Furthermore, by comparing the v T =2 gap to the single particle tunneling energy, Δ SAS , obtained from Schrödinger–Poisson (SP) simulations, evidence for the onset of spontaneous interlayer coherence is observed for a relative filling fraction imbalance smaller than ~50%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Reduction of efficiency droop in c -plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

We report on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different well widths (3 or 9 nm) with and without doped barriers. QW barriers were doped with the aim of reducing the internal electric field (F QW ) in the QW to increase the electron-hole overlap, therefore increasing the recombination rates and resulting in the reduction of the efficiency droop. We, indeed, observed, through biased photocurrent spectroscopy, a reduction in F QW with doped barriers, with F QW being in the same direction of the p-n junction field at zero bias as opposed to the junction field for LEDs without doped barriers. Even with the improvement in the ground state wavefunction overlap, the ground state transition rate remains low for thick QWs. Transitions through excited states were observed for both thick QW LEDs with and without doped barriers. Here, the thick QW LED without doped barriers displayed low external quantum efficiency (EQE), likely as a result of the carrier overflow due to the poor confinement of carriers in the excited states. On the other hand, for LEDs with doped barriers, the flatter band in the QW resulting from the lower F QW reduces the energy separation between the eigenstates, leading to better confinement of carriers in the excited states. With doped barriers, we demonstrated a low efficiency droop 9-nm-thick single QW LED with a peak EQE of 42% at 40 A/cm 2 and an EQE of 36% at 400 A/cm 2 .

42 ENGINEERING↗
DOE OSTI2022

Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

InGaN-based multi-quantum well (MQW) solar cells are promising devices for photovoltaics (e.g., for tandem solar cells and concentrator systems), space applications, and wireless power transfer. In order to improve the efficiency of these devices, the factors limiting their efficiency and stability must be investigated in detail. Due to the complexity of a MQW structure, compared with a simple pn junction, modeling the spectral response of these solar cells is not straightforward, and ad hoc methodologies must be implemented. In this paper, we propose a model, based on material parameters and closed-formula equations, that describes the shape of the quantum efficiency of InGaN/GaN MQW solar cells, by taking into account the layer thickness, the temperature dependence of the absorption coefficient, and quantum confinement effects. We demonstrate (i) that the proposed model can effectively reproduce the spectral response of the cells; in addition, (ii) we prove that the bulk p-GaN layer absorbs radiation, but the carriers photogenerated in this region do not significantly contribute to device current. Finally, we show that (iii) by increasing the temperature, there is a redshift of the absorption edge due to bandgap narrowing, which can be described by Varshni law and is taken into account by the model, and a lowering in the extraction efficiency due to the increase in recombination (mostly Shockley–Read–Hall) inside the quantum wells, which is also visible by decreasing light intensity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Impact of doped barriers on the recombination coefficients of c -plane InGaN/GaN single quantum well light-emitting diodes

Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type barriers close to the QW were used to reduce the net internal electric field in the QW, thereby improving the electron–hole wavefunction overlap on the LEDs. LEDs with doped barriers show short lifetimes and low carrier densities in the active region compared to the reference LEDs. The recombination coefficients in the ABC model were estimated based on the carrier lifetime and quantum efficiency measurements. The improvement in the radiative coefficients in the LEDs with doped barriers coupled with the blueshift of the emission wavelengths indeed indicates an enhancement in wavefunction overlap and a reduction of quantum confined Stark effect as a result of the reduced internal electric field. However, doped barriers also introduce non-radiative recombination centers and thereby increase the Shockley–Read–Hall (SRH) coefficient, although the increment is less for LEDs with high indium composition QWs. As a result, at high indium composition (22%), LEDs with doped barriers outperform the reference LEDs even though the trend is reversed for LEDs with lower indium composition (13.5%). In conclusion, despite the trade-off of higher SRH coefficients, doped barriers are shown to be effective in reducing the internal electric field and increasing the recombination coefficients.

42 ENGINEERING↗
DOE OSTI2025

Charge carrier extraction and recombination effects in GaInAs/GaAsP multi-quantum well solar cells

The carrier extraction and transport mechanisms as well as the relative contributions of radiative and non-radiative recombination processes are investigated in high-quality strain-balanced GaInAs/GaAsP multi-quantum well solar cells recently implemented in record efficiency multijunction solar cells. A comprehensive suite of complementary characterization techniques including temperature- and suns-dependent photoluminescence and photovoltaic measurements are employed to analyze thermal escape and tunneling rates, which demonstrate the need to move beyond simple drift-diffusion models of p–n junctions. This study examines the processes that best characterize the operation of these devices across varying temperatures using a simple two-diode model, incorporating multiple transport protocols, and provides insights into the performance-limiting processes and pathways for their optimization.

14 SOLAR ENERGY↗
DOE OSTI2025

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗
DOE OSTI2026

Ultrafast carrier dynamics in multiple quantum well p–i–n photodiodes

Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, and modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the terahertz regime, a deep understanding of ultrafast carrier dynamics in QW structures becomes essential. We introduce a comprehensive model to analyze the ultrafast dynamics of interband photo-excited carriers in QW p–i–n structures and to calculate their frequency response. This model characterizes the entire photocarrier transport process, including carrier escape from QWs and movement across heterojunction interfaces. Additionally, we outline theoretical methods for calculating carrier escape times from both QWs and heterojunction interfaces. Using a GaAs/AlGaAs QW p–i–n structure as a case study, we discuss the effects of carrier escape times from QWs and heterojunction interfaces, as well as carrier transit time through the intrinsic region, on the frequency response of QW p–i–n structures.

Electronic band structure↗
DOE OSTI2023

Local well-posedness and singularity formation in non-Newtonian compressible fluids

We investigate the initial value problem of a very general class of 3 + 1 non-Newtonian compressible fluids in which the viscous stress tensor with shear and bulk viscosity relaxes to its Navier–Stokes values. These fluids correspond to the non-relativistic limit of well-known Israel–Stewart-like theories used in the relativistic fluid dynamic simulations of high-energy nuclear and astrophysical systems. After establishing the local well-posedness of the Cauchy problem, we show for the first time in the literature that there exists a large class of initial data for which the corresponding evolution breaks down in finite time due to the formation of singularities. This implies that a large class of non-Newtonian fluids do not have finite solutions defined at all times.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells

We have fabricated GaAs rear-heterojunction solar cells with strain-balanced GaInAs/GaAsP multiple quantum wells to increase the range of absorption. The overall device architecture includes a thick n-type GaAs emitter layer, followed by undoped multiple quantum wells (QWs) and then a heterojunction with a higher bandgap GaInP p-type base. The QWs shift the band edge to from ~870 nm to 930 nm and results in >2 mA/cm 2 collection below the GaAs bandgap. Due to the heterojunction, the cell demonstrated a high open-circuit voltage of Voc=1.03V and an efficiency of 26.4% at 1000 W/m 2.

14 SOLAR ENERGY↗
DOE OSTI2021

32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells

We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.

III-V↗
DOE OSTI2020

In situ investigation of phosphonate retarder interaction in oil well cements at elevated temperature and pressure conditions

In this paper, the effect of a high-performance retarding additive in oil well cements was investigated under elevated temperature (165°C) and pressure (1000 psi) conditions via in situ synchrotron-based X-ray diffraction (XRD) and quasielastic neutron scattering (QENS) techniques. Under these temperature and pressure conditions, crystalline calcium silicate hydrates (C–S–H) are formed through the cement hydration process. From in situ XRD experiments, the retardation effect was observed by a change in the rate of the appearance of 11 Å tobermorites as well as a change in the rate of the α-C 2 SH generation and depletion. QENS analysis revealed that the retardation effect was related to the non-conversion of free water to chemical and constrained water components. A high presence of free water components was attributed to a decrease in 11Å tobermorites along with slower consumption of the quartz and portlandite phases. Furthermore, QENS results infer that the water molecules experienced confinement in the restricted pore spaces. The retarder inhibited this initial water confinement by slowing the bulk diffusion of free water in the confined region.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Temperature uncertainty modelling with proxy structural data as geostatistical constraints for well siting: an example applied to Granite Springs Valley, NV, USA

Utilizing existing temperature and structural geology information around Granite Springs Valley, Nevada, we build 3D stochastic temperature models with the aims of evaluating the 3D uncertainty of temperature and choosing between candidate exploration well locations. The data used to support the modelling are measured temperatures and structural proxies from 3D geologic modelling (distance to fault, distance to fault intersections and terminations, Coulomb stress change and dilation tendency), the latter considered ‘secondary’ data. Two stochastic geostatistical techniques are explored for incorporating the structural proxies: cosimulation and local varying mean. With both the cosimulation and local varying mean methods, many equally-likely temperature models (i.e. realizations) are produced, from which temperature probability profiles are calculated at candidate well locations. To aid in choosing between the candidate locations, two quantities summarize the temperature probabilities: V prior and entropy. V prior quantifies the likelihood for economic temperatures at each candidate location, whereas entropy identifies where new information has the most potential to reduce uncertainty. In general, the cosimulation realizations have smoother spatial structure, and extrapolate high temperatures at candidate locations that are located along the direction of the longest spatial correlation, which are down dip from existing temperature logs. The smooth realizations result in tight temperature probability profiles that are easier to interpret, but they have unrealistic temperature reversals in some locations because of the dipping ellipsoid shape created and that the cosimulation technique does not enforce a conductive geothermal gradient as a baseline (i.e. linearly increasing temperature with depth). The local varying mean results produce realizations with more realistic geothermal gradients, with temperatures increasing downward since a depth-temperature relationship is included. However, because they have much noisier spatial nature compared to cosimulation, it is harder to interpret the temperature probability profiles. The different local varying mean results allow the geologist to determine which proxy (e.g. dilation v. distance to fault termination) should be used given the specific geothermal system. In general, V prior from local varying mean results identify locations that are close to high values for the structural proxies: areas with higher probabilities for higher temperatures. The entropy results identify where uncertainty is greatest and therefore new drilling information could be most useful. Though these techniques provide useful information, even when applied to areas of sparse data, our comparison of these two techniques demonstrates the need for new geothermal geostatistics techniques that combine the advantages of these two methods and that are tailored to the spatial uncertainty issues inherent in geothermal exploration.

15 GEOTHERMAL ENERGY↗
DOE OSTI2020

Oregon Direct Use Geothermal Well Data

This excel file provides direct use geothermal data for various wells located in Oregon. Data includes well name, location, heating application, temperature and flow of fluid, capacity, energy use, and load factor. The data is from the State of Oregon Department of Geology and Mineral Industries (linked below), where additional data downloads and metadata may be found.

15 GEOTHERMAL ENERGY↗
DOE OSTI2022

Utah FORGE: Phase 1a Tensor Strainmeter Data for the April, 2022 Stimulation of Well 16A(78)-32

Data from two Tensor Optical Fiber Strainmeters that were operational during Stages 1, 2, and 3 of the April, 2022 stimulation of well 16A(78)-32. Each csv file contains data from each stimulation stage (stage1, stage2, stage3) for both Phase 1a strainmeter installations (FS01, formerly FS-C, and FS02, formerly FS1-2) in human-readable comma-separated value text files. There are two header lines in each file describing the data contained in that column along with their units, respectively. Data have been decimated from 2 to 1 Hz to match the Pason data found in the linked GDR dataset below (16A78-32 Stimulation Pason Data). These files contain the time series spanning the same time interval as the Pason data as well as ambient data for 5 hours before the stimulation and 5 hours following shut in. The station locations were chosen based on their proximity to the borehole seismometers owned and operated by the University of Utah. See README.txt for more information.

15 GEOTHERMAL ENERGY↗
DOE OSTI2023

Utah FORGE 1-2409: Zonal Isolation Solution for Geothermal Wells - Workshop Presentation

This is a presentation on the Zonal Isolation Solution for Geothermal Wells project by PetroQuip Energy Services, presented by VP of operations Robert Coon. The project's objective was to design and develop a multi-stage system for zonally isolating fluids inside and outside of geothermal well casings. This presentation was featured in the Utah FORGE R&D Annual Workshop on September 7, 2023. The workshop provided a valuable opportunity to explore the progress made in each of the 17 Research and Development projects funded under Solicitation 2020-1 which aim to enhance our understanding of the crucial factors influencing the development of Enhanced Geothermal Systems (EGS) reservoirs and resources.

15 GEOTHERMAL ENERGY↗