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At least 325 records · Page 18

All sources NASA NTRS DOE OSTI

DOE OSTI2020

Enabling Stable Cycling of 4.2 V High-Voltage All-Solid-State Batteries with PEO-Based Solid Electrolyte

Poly(ethylene oxide) (PEO)-based solid electrolytes are expected to be exploited in solid-state batteries with high safety. Its narrow electrochemical window, however, limits the potential for high voltage and high energy density applications. In this paper, the electrochemical oxidation behavior of PEO and the failure mechanisms of LiCoO 2 -PEO solid-state batteries are studied. It is found that although for pure PEO it starts to oxidize at a voltage of above 3.9 V versus Li/Li + , the decomposition products have appropriate Li + conductivity that unexpectedly form a relatively stable cathode electrolyte interphase (CEI) layer at the PEO and electrode interface. The performance degradation of the LiCoO 2 -PEO battery originates from the strong oxidizing ability of LiCoO 2 after delithiation at high voltages, which accelerates the decomposition of PEO and drives the self-oxygen-release of LiCoO 2 , leading to the unceasing growth of CEI and the destruction of the LiCoO 2 surface. When LiCoO 2 is well coated or a stable cathode LiMn 0.7 Fe 0.3 PO 4 is used, a substantially improved electrochemical performance can be achieved, with 88.6% capacity retention after 50 cycles for Li 1.4 Al 0.4 Ti 1.6 (PO 4 ) 3 coated LiCoO 2 and 90.3% capacity retention after 100 cycles for LiMn 0.7 Fe 0.3 PO 4 . The results suggest that, when paired with stable cathodes, the PEO-based solid polymer electrolytes could be compatible with high voltage operation.

25 ENERGY STORAGE↗

NASA NTRS1979

Proposed smart integrated-optical preprocessor using holographic subtraction

The paper presents a proposed integrated-optical preprocessor with a holographic subtraction. It is based on an optical analog of a set of N analog voltages formed by passing an optical plane wave, confined in an electrooptic waveguide, under a set of N electrodes to which the voltages are applied; in the limit in which diffraction is ignored, the wavefront of the emerging guided wave will have superimposed upon it N discrete phase shifts. Processors which operate upon voltages encoded in this manner are being fabricated; they include a comparator in which incoming data are compared to a holographic record of the optical analog of a reference set, and a 'smart' system based upon holographic self-subtraction, in which the processor can independently adapt to changes in background information. The preprocessor operation is described in the screening, identification, and the self-subtraction modes, and implementation of devices in an integrated optical configuration is discussed.

Verber, C. M.↗

NASA NTRS1965

Hybrid circuit achieves pulse regeneration with low power drain

Hybrid tunnel diode-transistor circuit provides a solid-state, low power drain pulse regenerator, frequency limiter, or gated oscillator. When the feedback voltage exceeds the input voltage, the circuit functions as a pulse normalizer or a frequency limiter. If the circuit is direct coupled, it functions as a gated oscillator.

Cancro, C. A.↗

NASA NTRS1979

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Fossum, J. G.↗

DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗

NASA NTRS2007

Multiloop Rapid-Rise/Rapid Fall High-Voltage Power Supply

A proposed multiloop power supply would generate a potential as high as 1.25 kV with rise and fall times <100 s. This power supply would, moreover, be programmable to generate output potentials from 20 to 1,250 V and would be capable of supplying a current of at least 300 A at 1,250 V. This power supply is intended to be a means of electronic shuttering of a microchannel plate that would be used to intensify the output of a charge-coupled-device imager to obtain exposure times as short as 1 ms. The basic design of this power supply could also be adapted to other applications in which high voltages and high slew rates are needed. At the time of reporting the information for this article, there was no commercially available power supply capable of satisfying the stated combination of voltage, rise-time, and fall-time requirements. The power supply would include a preregulator that would be used to program a voltage 1/30 of the desired output voltage. By means of a circuit that would include a pulse-width modulator (PWM), two voltage doublers, and a transformer having two primary and two secondary windings, the preregulator output voltage would be amplified by a factor of 30. A resistor would limit the current by controlling a drive voltage applied to field-effect transistors (FETs) during turn-on of the PWM. Two feedback loops would be used to regulate the high output voltage. A pulse transformer would be used to turn on four FETs to short-circuit output capacitors when the outputs of the PWM were disabled. Application of a 0-to-5-V square to a PWM shut-down pin would cause a 20-to-1,250-V square wave to appear at the output.

Bearden, Douglas↗

DOE OSTI2023

Novel n-type Device Architectures to Achieve 1 Volt V OC in Thin Film CdTe cells

The main goal of this project was to develop a novel thin film CdTe solar cell architecture based on an n-type absorber, which can overcome performance limitations associated with the typical p-Cd(Se)Te state-of-the-art architecture. Even today, the performance of the Cd(Se)Te cell continues to be limited by its open- circuit voltage, which is directly related to the net doping of the absorber. (currently @ approx. 900 mV for CdTe/CST device configuration). The proposed polycrystalline thin- film solar cell architecture was based on n-type CdTe (and CdSeTe) absorbers to overcome this limitation, since n-type CdTe absorbers offer advantages over p-type: (i) n-type dopability in CdTe is higher (than p), enabling higher doping and therefore higher V OC (ii) using a wide bandgap material as the p-contact, the n-CdTe cell can become a “bi-facial” cell, with the potential to increase energy yield up to 25% depending on environmental and mounting conditions.

14 SOLAR ENERGY↗

DOE OSTI2020

Real-Time Distributed Control of Smart Inverters for Network-level Optimization

The limitations of centralized optimization methods in managing electric power distribution systems operations have led to the distributed paradigm of computing and decision-making. Unfortunately, the existing distributed optimization algorithms are limited in their applicability to managing fast varying phenomena such as those resulting from highly variable Distributed Energy Resource (DER) generation patterns. They require a large number of communication rounds (in the order of 10 2 to 10 3 ) among the computing agents to solve one instance of the optimization problem. Related real-time distributed control methods are equally limited in their applications to power distribution systems with fast-changing DER generation; they require hundreds of rounds of communication and thus are slow in tracking the network-level optimal solutions. In this paper, we propose a novel distributed voltage controller that provides a fast-tracking of rapidly varying DER generation profiles while simultaneously converging to network-level optimal solutions within a few communication rounds. The proposed control algorithm leverages the radial topology of the system, which reduces the required communication rounds to reach the network-level optimum solution by order of magnitude. The novelty lies in carefully reducing the electrical network model from the perspective of each distributed controller and enabling appropriate data sharing among upstream and downstream nodes to achieve fast convergence. The simulation results demonstrate the effectiveness of the proposed approach in minimizing the feeder losses while maintaining the node voltage within the pre-specified limits.

voltage control, optimization, reactive power, inv↗

DOE OSTI2022

Garnet solid electrolyte blended LiNi 0.6 Mn 0.2 Co 0.2 O 2 as high-voltage stable cathodes for advanced lithium-ion batteries

Ni-rich LiNi 1-x Co x/2 Mn x/2 O 2 layered materials have been widely adopted as cathodes for current electric vehicles (EVs) due to their high gravimetric and volumetric energy densities. However, their high-voltage instability (e.g., > 4.3 V vsLi ) limited their usable capacities corresponding to about 60 – 70 % of theoretical capacities. The major problems of high-voltage operation stem from instability of Ni 3+/4+ at cathode-electrolyte interphase (CEI) in contact with electrolytes. Here we propose garnet-type Li 6.7 La 3 Zr 1.7 Ta 0.3 O 12 (LLZT) solid-electrolyte-blended LiNi 0.6 Mn 0.2 Co 0.2 O 2 (NMC) as high-voltage stable cathodes. The LLZT not only passivates the CEI but scavenges protons and moisture in electrolytes. From well-balanced ionic and electronic transport properties, 5 wt% LLZT blended NMC cathodes delivered enhanced electrochemical performances in full-cells. Unlike other complicated coating processes, our proposed solid-electrolyte blending approach can be readily implementable in commercial Li-ion batteries due to its manufacturing friendliness, energy saving, and cost effectiveness.

33 ADVANCED PROPULSION SYSTEMS↗

NASA NTRS2013

Hybrid-PIC Modeling of a High-Voltage, High-Specific-Impulse Hall Thruster

The primary life-limiting mechanism of Hall thrusters is the sputter erosion of the discharge channel walls by high-energy propellant ions. Because of the difficulty involved in characterizing this erosion experimentally, many past efforts have focused on numerical modeling to predict erosion rates and thruster lifespan, but those analyses were limited to Hall thrusters operating in the 200-400V discharge voltage range. Thrusters operating at higher discharge voltages (V(sub d) >= 500 V) present an erosion environment that may differ greatly from that of the lower-voltage thrusters modeled in the past. In this work, HPHall, a well-established hybrid-PIC code, is used to simulate NASA's High-Voltage Hall Accelerator (HiVHAc) at discharge voltages of 300, 400, and 500V as a first step towards modeling the discharge channel erosion. It is found that the model accurately predicts the thruster performance at all operating conditions to within 6%. The model predicts a normalized plasma potential profile that is consistent between all three operating points, with the acceleration zone appearing in the same approximate location. The expected trend of increasing electron temperature with increasing discharge voltage is observed. An analysis of the discharge current oscillations shows that the model predicts oscillations that are much greater in amplitude than those measured experimentally at all operating points, suggesting that the differences in oscillation amplitude are not strongly associated with discharge voltage.

Hall Thrusters↗

NASA NTRS1986

Description of a 20 Kilohertz power distribution system

A single phase, 440 VRMS, 20 kHz power distribution system with a regulated sinusoidal wave form is discussed. A single phase power system minimizes the wiring, sensing, and control complexities required in a multi-sourced redundantly distributed power system. The single phase addresses only the distribution link; mulitphase lower frequency inputs and outputs accommodation techniques are described. While the 440 V operating potential was initially selected for aircraft operating below 50,000 ft, this potential also appears suitable for space power systems. This voltage choice recognizes a reasonable upper limit for semiconductor ratings, yet will direct synthesis of 220 V, 3 power. A 20 kHz operating frequency was selected to be above the range of audibility, minimize the weight of reactive components, yet allow the construction of single power stages of 25 to 30 kW. The regulated sinusoidal distribution system has several advantages. With a regulated voltage, most ac/dc conversions involve rather simple transformer rectifier applications. A sinusoidal distribution system, when used in conjunction with zero crossing switching, represents a minimal source of EMI. The present state of 20 kHz power technology includes computer controls of voltage and/or frequency, low inductance cable, current limiting circuit protection, bi-directional power flow, and motor/generator operating using standard induction machines. A status update and description of each of these items and their significance is presented.

Hansen, I. G.↗

NASA NTRS1986

Description of a 20 kilohertz power distribution system

A single phase, 440 VRMS, 20 kHz power distribution system with a regulated sinusoidal wave form is discussed. A single phase power system minimizes the wiring, sensing, and control complexities required in a multi-sourced redundantly distributed power system. The single phase addresses only the distribution links multiphase lower frequency inputs and outputs accommodation techniques are described. While the 440 V operating potential was initially selected for aircraft operating below 50,000 ft, this potential also appears suitable for space power systems. This voltage choice recognizes a reasonable upper limit for semiconductor ratings, yet will direct synthesis of 220 V, 3 power. A 20 kHz operating frequency was selected to be above the range of audibility, minimize the weight of reactive components, yet allow the construction of single power stages of 25 to 30 kW. The regulated sinusoidal distribution system has several advantages. With a regulated voltage, most ac/dc conversions involve rather simple transformer rectifier applications. A sinusoidal distribution system, when used in conjunction with zero crossing switching, represents a minimal source of EMI. The present state of 20 kHz power technology includes computer controls of voltage and/or frequency, low inductance cable, current limiting circuit protection, bi-directional power flow, and motor/generator operating using standard induction machines. A status update and description of each of these items and their significance is presented.

Hansen, I. G.↗

DOE OSTI2026

Theory and simulation of gap distance transitions in planar magnetically insulated transmission lines

Magnetically insulated transmission lines (MITLs) are critical components for efficiently transporting power from pulsed power sources to a diverse range of loads, including magneto-inertial confinement fusion and radiation production. This study investigates the behavior of planar MITLs, taking into account the source voltage and source and load impedances, using two-dimensional theory and simulations. Self-limited behavior, where the MITL operating impedance (voltage divided by current) is insensitive to the value of load impedance, is extended to small-to-large gap distance MITL transitions. Load-limited behavior, in which the load impedance is below the self-limited impedance, causes the MITL operating impedance to adjust to match the load impedance and can be extended to describe large-to-small transitions. In both cases, the operating impedance of the larger MITL section changes to match the self-limited operating impedance of the smaller section. This behavior extends to multiple transitions and to both low and high impedance loads. Assuming equilibration occurs (pulse duration larger than MITL transit time), the entire MITL operating impedance becomes the self-limited impedance of the smallest-gap MITL section or the load impedance, whichever is lower.

Darr, Adam M. [Sandia National Laboratories (SNL-N↗

DOE OSTI2025

Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit

Top-performing single-junction and two-terminal tandem devices that include at least one polycrystalline cell are compared with each other and their ideal limits. The parameters of open-circuit voltage, short-circuit current, and fill-factor are individually compared to the Shockley–Queisser limit to investigate where different technologies have room to improve. Technologies, such as silicon and cadmium telluride have the most room for improvement in open-circuit voltage currently utilizing 87% and 81% of their maxima, respectively. Detailed diode and fill-factor loss analysis is presented for single-junction devices to give further insight on how they compare and where efficiency is lost. Single-crystal technologies demonstrate a fill-factor closer to the Shockley–Queisser limit than polycrystalline devices. The high diode quality factor of polycrystalline devices is the leading cause of the decreased fill-factor. Similar analysis on tandem cells with at least one thin-film cell shows that although their efficiency exceeds that of the single-junction cells, the fraction of their ideal efficiency is smaller. Here, by comparing parameters to the Shockley–Queisser limit, it becomes clearer where certain technologies have the potential for improvement.

High efficiency↗

DOE OSTI2022

Dual-Color Optical Recording of Bioelectric Potentials by Polymer Electrochromism

Optical recording based on voltage-sensitive fluorescent reporters allows for spatial flexibility of measuring from desired cells, but photobleaching and phototoxicity of the fluorescent labels often limit their sensitivity and recording duration. Voltage-dependent optical absorption, rather than fluorescence, of electrochromic materials, would overcome these limitations to achieve long-term optical recording of bioelectrical signals. Electrochromic materials such as PEDOT:PSS possess the property that an applied voltage can either increase or decrease the light absorption depending on the wavelength. In this work, we harness this anticorrelated light absorption at two different wavelengths to significantly improve the signal detection. With dual-color detection, electrical activity from cells produces signals of opposite polarity, while artifacts, mechanical motions, and technical noises are uncorrelated or positively correlated. Using this technique, we are able to optically record cardiac action potentials with a high signal-to-noise ratio, 10 kHz sampling rate, >15 min recording duration, and no time-dependent degradation of the signal. Furthermore, we can reliably perform multiple recording sessions from the same culture for over 25 days.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Comprehensive model for evaluating voltage losses and performance improvements in thin-film photovoltaic devices

Progress of state-of-the-art and next-generation thin-film photovoltaic devices is often stymied by open-circuit voltage (𝑉 oc ) that is significantly lower than theoretical and practical limits. Yet, effectively diagnosing the primary sources of voltage loss remains challenging. Herein, a sequence of device-level characterization techniques and simulations are employed to identify and rank loss mechanisms. For the research-based Cd⁡(Se,Te) device under study, most of the loss was at the front semiconductor heterointerface due to a clifflike conduction-band offset that lowered the recombination activation energy. Additional losses due to band tails were quantified by photoluminescence analysis. The latter provided the absorption coefficient and activation energy reduction associated with band tails as inputs to device models. Simulations showed that alleviating front-interface issues would improve 𝑉 oc , but it would then be limited by bulk recombination. Further improvement of the bulk would then lead to back-contact limitations. Reducing band tails is beneficial in any circumstance. In conclusion, this analysis provides guidance for reaching toward the radiative 𝑉 oc limit.

14 SOLAR ENERGY↗

DOE OSTI2022

Traps and transport resistance are the next frontiers for stable non-fullerene acceptor solar cells

Stability is one of the most important challenges facing material research for organic solar cells (OSC) on their path to further commercialization. In the high-performance material system PM6:Y6 studied here, we investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires the presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits the open-circuit voltage and lowers the charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

14 SOLAR ENERGY↗

DOE OSTI2025

Voltage cycling as a dynamic operation mode for high temperature electrolysis solid oxide cells

Solid Oxide Electrolysis Cells (SOECs) have emerged as a promising technology for the efficient production of H2 via high-temperature electrolysis. However, power input from dynamic energy sources remains a significant challenge for their long-term stability. It is important to analyze the tolerance of cells under dynamic operation conditions. This study focuses on evaluating the impact of voltage cycling on the performance and durability of electrode-supported SOECs. We explore the operational limits and degradation mechanisms of SOECs subjected to various voltage conditions and find that the cells have high tolerance for dynamic voltage. Voltage cycling between 1.3 V and 1.5 V for 9000 cycles does not damage the cell. Conversely, cycling to higher voltages (≥1.7 V) results in accelerated degradation. Advanced characterization is used to screen for various degradation modes post operation. Within the oxygen electrode, XRD and STEM EDS find compositional and phase evolution in all voltage cycled samples including increased decomposition of the air electrode resulting in cation migration. Microstructural analysis of the fuel electrode from nano-CT data shows minimal change throughout the sample set and no evidence of Ni migration, indicating the fuel electrode is stable and not impacted by cycling to higher voltages within the timeframe studied.

Zhu, Zhikuan↗