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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Experiments point way toward more relaxed controls over ion-implanation dosage and uniformity in solar-cell fabrication. Data indicate cell performance, measured by output current density at fixed voltage, virtually same whether implant is particular ion species or broad-beam mixture of several species.
A generalized transmitter control and monitor card was developed using the Intel 8031 (8051 family) microprocessor. The design was generalized so that this card can be utilized for virtually any control application with only firmware changes. The block diagram appears in Figure 2. The card provides for local control using a 16 key keypad (up to 64 keys are supported). The local display is four digits of 7 segment LEDs. The display can indicate the status of all major system parameters and provide voltage readout for the analog signal inputs. The card can be populated with only the chips required for a given application. Fully populated, the card has two RS-232 serial ports for computer communications. It has a total of 48 TTL parallel lines that can define as either inputs or outputs in groups of four. A total of 32 analog inputs with a 0-5 volt range are supported. In addition, a real-time clock/calendar is available if required. A total of 16 k bytes of ROM and 16 k bytes of RAM is available for programming. This card can be the basis of virtually any monitor or control system with appropriate software.
Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.
Impedances were measured on several Li/SO2 cells retrieved from the Long Duration Exposure Facility (LDEF) satellite. These cells were used to power instruments and recorders and had all been partially or fully discharged. Impedances were also measured on several cells that were stored in cold storage since manufacture. Unfortunately, none of the cells stored terrestrially had undergone any discharge, whereas all of the cells on the satellite were at least partially discharged early in the mission and then remained on orbit for about 5 years further. It has been observed by others that storage of an Li/SO2 cell after partial discharge, increases the resistance and thickness of the passive film on the Li electrode, as indicated by an increase in the time for recovery of voltage when a load is applied (voltage lag), or in some cases by an inability of a cell to sustain a normal current after such storage. Since the cells stored terrestrially were not discharged in the same manner as the LDEF cells, a direct comparison cannot be made. Thus, the effects of the space environment cannot be separated from the effects of storage after partial discharge. It is believed that the increases in impedance in the LDEF cells are largely due to the storage upon partial discharge rather than the effects of the space environment.
Anode power deposition is the principle performance limiter of magnetoplasmadynamic (MPD) thrusters. Current thrusters lose between 50 and 70 percent of the input power to the anode. In this work, anode power deposition was studied for three cylindrical applied magnetic field thrusters for a range of argon propellant flow rates, discharge currents, and applied-field strengths. Between 60 and 95 percent of the anode power deposition resulted from electron current conduction into the anode, with cathode radiation depositing between 5 and 35 percent of the anode power, and convective heat transfer from the hot plasma accounting for less than 5 percent. While the fractional anode power loss decreased with increasing applied-field strength and anode size, the magnitude of the anode power increased. The rise in anode power resulted from a linear rise in the anode fall voltage with applied-field strength and anode radius. The anode fall voltage also rose with decreasing propellant flow rate. The trends indicate that the anode fall region is magnetized, and suggest techniques for reducing the anode power loss in MPD thrusters.
Anode power deposition is the principal performance limiter of magnetoplasmadynamic (MPD) thrusters. Current thrusters lose between 50 and 70 percent of the input power to the anode. In this work, anode power deposition was studied for three cylindrical applied magnetic field thrusters for a range of argon propellant flow rates, discharge currents, and applied-field strengths. Between 60 and 95 percent of the anode power depositions resulted from electron current conduction into the anode, with cathode radiation depositing between 5 and 35 percent of the anode power, and convective heat transfer from the hot plasma accounting for less than 5 percent. While the fractional anode power loss decreased with increasing applied-field strength and anode size, the magnitude of the anode power increased. The rise in anode power resulted from a linear rise in the anode fall voltage with applied-field strength and anode radius. The anode fall voltage also rose with decreasing propellant flow rate. The trends indicate that the anode fall region is magnetized, and suggest techniques for reducing the anode power loss in MPD thrusters.
A non-intrusive electrical cable tester determines the nature and location of a discontinuity in a cable through application of an oscillating signal to one end of the cable. The frequency of the oscillating signal is varied in increments until a minimum, close to zero voltage is measured at a signal injection point which is indicative of a minimum impedance at that point. The frequency of the test signal at which the minimum impedance occurs is then employed to determine the distance to the discontinuity by employing a formula which relates this distance to the signal frequency and the velocity factor of the cable. A numerically controlled oscillator is provided to generate the oscillating signal, and a microcontroller automatically controls operation of the cable tester to make the desired measurements and display the results. The device is contained in a portable housing which may be hand held to facilitate convenient use of the device in difficult to access locations.
This report is the final report of a NASA Phase I SBIR contract, with some revisions to remove company proprietary data. The Shock Boundary Layer Interaction (SBLI) phenomena in a supersonic inlet involve mutual interaction of oblique shocks with boundary layers, forcing the boundary layer to separate from the inlet wall. To improve the inlet efficiency, it is desired to prevent or delay shock-induced boundary layer separation. In this effort, Innovative Technology Applications Company (ITAC), LLC and the University of Notre Dame (UND) jointly investigated the use of dielectric-barrier-discharge (DBD) plasma actuators for control of SBLI in a supersonic inlet. The research investigated the potential for DBD plasma actuators to suppress flow separation caused by a shock in a turbulent boundary layer. The research involved both numerical and experimental investigations of plasma flow control for a few different SBLI configurations: (a) a 12 wedge flow test case at Mach 1.5 (numerical and experimental), (b) an impinging shock test case at Mach 1.5 using an airfoil as a shock generator (numerical and experimental), and (c) a Mach 2.0 nozzle flow case in a simulated 15 X 15 cm wind tunnel with a shock generator (numerical). Numerical studies were performed for all three test cases to examine the feasibility of plasma flow control concepts. These results were used to guide the wind tunnel experiments conducted on the Mach 1.5 12 degree wedge flow (case a) and the Mach 1.5 impinging shock test case (case b) which were at similar flow conditions as the corresponding numerical studies to obtain experimental evidence of plasma control effects for SBLI control. The experiments also generated data that were used in validating the numerical studies for the baseline cases (without plasma actuators). The experiments were conducted in a Mach 1.5 test section in the University of Notre Dame Hessert Laboratory. The simulation results from cases a and b indicated that multiple spanwise actuators in series and at a voltage of 75 kVp-p could fully suppress the flow separation downstream of the shock. The simulation results from case c showed that the streamwise plasma actuators are highly effective in creating pairs of counter-rotating vortices, much like the mechanical vortex generators, and could also potentially have beneficial effects for SBLI control. However, to achieve these effects, the positioning and the quantity of the DBD actuators used must be optimized. The wind tunnel experiments mapped the baseline flow with good agreement to the numerical simulations. The experimental results were conducted with spanwise actuators for cases a and b, but were limited by the inability to generate a sufficiently high voltage due to arcing in the wind-tunnel test-section. The static pressure in the tunnel was lower than the static pressure in an inlet at flight conditions, promoting arching and degrading the actuator performance.
The paper introduces the midpoint monitoring method for detecting cell voltage imbalance in a series string of 8 electrochemical cells. Monte Carlo analysis is performed for normal cell End of Discharge open and closed circuit voltage behavior to assess the extent to which derived guard band voltage limits will detect over discharged cells, provide false positive indication, or fail to detect over discharged cells. Forward work is proposed to refine the battery monitoring method for operational use in 28V lithium ion batteries.
Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.
The temporal evolution of the voltage-current characteristic of a spherical Langmuir probe in the near-wake region of a conducting body is investigated in a pulsed plasma device. Measurements of the current collected by a sphere placed on axis behind a conducting disk are presented as a function of the bias voltage and time. The bias voltage on the collecting sphere is large enough, ranging from +500 to -3000 V, to attract ions or electrons across the wake region. In addition, plasma potential profiles as a function of sphere bias voltage and time throughout the nearwake and midwake region are presented. It is found that for a negative sphere bias a threshold voltage exists for current collection. This threshold voltage decreases during the formation of the wake behind the conducting disk. Potential measurements indicate that the sheath region around the negatively biased sphere contracts as the wake region establishes itself. This contraction of the sheath region increases the electric field attracting ions to the sphere and decreases the threshold voltage for current collection. For positive sphere bias voltage the current collected by the sphere does not exhibit a threshold voltage but is monotonically increasing.
Improvements in the open circuit voltage of 0.1 ohm-cm silicon solar cells were achieved using a multistep diffusion technique. Experimental details are given along with the results of an analysis that indicate that anomalous behavior of the electron mobility in the cell base limits attainment of higher voltages.
A 2-terminal, dual-junction, epitaxially integrated, GaAsP/Si tandem solar cell with an 3rd party certified efficiency of 23.4 % was fabricated via MOCVD growth on an ex-situ produced Si sub cell. The drastic efficiency improvement over the authors previous peer-reviewed demonstration of such a device architecture is examined. Critical advancements in top cell design to maximize short wavelength response were critical in enabling improved top cell response. An in-depth analysis of this champion tandem cell has identified key loss mechanisms which elucidate the pathway for further efficiency gains. First, voltage dependent collection efficiency in the GaAsP top cell is the primary cause of fill factor losses currently limiting efficiency. Analysis of spectrally resolved I–V measurements and analytical device modeling and indicate poor diffusion length due to elevated dislocation densities as the likely cause for the voltage dependent collection efficiency. Second, modeling for the GaAs 0.75 P 0.25 top cell, using experimental data at multiple dislocation densities, provides quantitative understanding of the current and voltage losses associated with threading dislocations providing a clear efficiency pathway with reduction in dislocation density. Finally, Si subcell modeling identifies the pathway for further Si subcell advances over the present, simplistic design, which has yet to employ the known benefits of rear surface texture or dielectric passivation.
Dow Chemical's research activities in fuel cells revolve around the development of perfluorosulfonic acid membranes useful as the proton transport medium and separator. Some of the performance characteristics which are typical for such membranes are outlined. The results of tests utilizing a new experimental membrane useful in proton-exchange membrane fuel cells are presented. The high voltage at low current densities can lead to higher system efficiencies while, at the same time, not sacrificing other critical properties pertinent to membrane fuel cell operation. A series of tests to determine response times indicated that on-off cycles are on the order of 80 milliseconds to reach 90 percent of full power. The IR free voltage at 100 amps/sq ft was determined and the results indicating a membrane/electrode package resistance to be .15 ohm-sq cm at 100 amps/sq ft.
Improvements in the open-circuit voltage of 0.1 ohm-cm silicon solar cells have been achieved using a multistep diffusion technique. Experimental details are given along with the results of an analysis that indicate that anomalous behaviors of the electron mobility in the cell base limits attainment of higher voltages.
Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.
Abstract N-on-psilicon sensors will be utilized in the Compact Muon Solenoid (CMS) detector's tracker and High Granularity Calorimeter (HGCAL) in the High Luminosity upgrade of the Large Hadron Collider (HL-LHC). Among their several advantages in terms of radiation hardness over the traditionalp-on-nsensors in the extreme radiation environment of the HL-LHC are electron collection instead of holes and overlapping maxima of weighting and electric fields at the charge-collecting electrodes. The disadvantage of the multi-channel SiO 2 -passivatedn-on-psensors is the generation of an inversion layer under the Si/SiO 2 -interface by a positive interface-oxide-charge (N ox ) that at high densities can compromise the position resolution by creating a conduction channel between the electrodes. This issue is typically addressed by including additional isolnts (p-stp,p-spray) between n + -electrodes. Focusing on the guard-ring regions ofn-on-psensors where no isolation implants are applied between the electrodes, a capacitance-voltage (CV) characterization study of both 6-inch wafer test diodes and 8-inch HGCAL prototype and pre-series sensors showed a distinct threshold voltage (V th,iso ) in theCV-characteristics of a biased n + -electrode when its enclosing guard-ring was left floating. When reproduced by simulations, the measuredV th,iso was found to contain information on the field-regionN ox and indicate the threshold where the two electrodes become electrically isolated by the influence of the reverse bias voltage. Together with previous studies on the inter-electrode isolation of irradiatedn-on-psensors, the results indicate that position sensitiven-on-psensors without isolation implants may be feasible in future HEP experiments.
An experimental study performed on a 20 cm electron bombardment thruster shows substantial improvements in throttled performance can be achieved if cathode discharge region diameter and length, cathode flow rate and baffle aperture area are reduced simultaneously. This improvement is related to a thruster operating mode in which arc current does not vary significantly with arc voltage. In this mode it is possible to operate the thruster at a high arc voltage and a correspondingly high primary electron energy without the penalty of a prohibitively high arc power. Langmuir probe data indicate the arc current is limited by the cathode region plasma potential and electron density which are both nearly invariant with arc voltage.