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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Effects of wall thickness on the flow instability of supercritical pressure water in a tube - 18568

The subcritical steam generators in the current high-temperature-reactor pebble-bed module, HTR-PM, in China can be replaced by supercritical steam generators to better coordinate the reactors and the supercritical steam turbines to improve thermal efficiencies with no phase change at supercritical pressures. This study numerically studied the heat transfer and flow instability of supercritical pressure water in a vertical tube with zero- and finite-thickness walls. The effect of the wall thickness on the heat transfer of supercritical pressure water at steady state was negligible. In the transient calculations, the fluid flow rate oscillated intensely beyond a certain heat flux with zero-thickness wall, while the flows in the tube with the finite-thickness walls acted totally different. The wall properties including the density and specific heat were varied to analyze why the oscillations were suppressed when the finite-thickness wall was considered in the calculation. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2023

3D Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred‐Nanometer Thickness

Magnetic topological states refer to a class of exotic phases in magnetic materials with the non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state, which is a zero magnetic field manifestation of the quantum Hall effect. Current research in this direction focuses on QAH insulators with a thickness of less than 10 nm. Here, molecular beam epitaxy (MBE) is employed to synthesize magnetic TI trilayers with a thickness of up to ≈106 nm. It is found that these samples exhibit well-quantized Hall resistance and vanishing longitudinal resistance at zero magnetic field. By varying the magnetic dopants, gate voltages, temperature, and external magnetic fields, the properties of these thick QAH insulators are examined and the robustness of the 3D QAH effect is demonstrated. The realization of the well-quantized 3D QAH effect indicates that the nonchiral side surface states of the thick magnetic TI trilayers are gapped and thus do not affect the QAH quantization. The 3D QAH insulators of hundred-nanometer thickness provide a promising platform for the exploration of fundamental physics, including axion physics and image magnetic monopole, and the advancement of electronic and spintronic devices to circumvent Moore's law.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Rational Regulation of Layer‐by‐Layer Processed Active Layer via Trimer‐Induced Pre‐Swelling Strategy for Efficient and Robust Thick‐Film Organic Solar Cells

Thick-film (>300 nm) organic solar cells (OSCs) have garnered intensifying attention due to their compatibility with commercial roll-to-roll printing technology for the large-scale continuous fabrication process. However, due to the uncontrollable donor/acceptor (D/A) arrangement in thick-film condition, the restricted exciton splitting and severe carrier traps significantly impede the photovoltaic performance and operability. For this work, combined with layer-by-layer deposition technology, a twisted 3D star-shaped trimer (BTT-Out) is synthesized to develop a trimer-induced pre-swelling (TIP) strategy, where the BTT-Out is incorporated into the buried D18 donor layer to enable the fabrication of thick-film OSCs. The integrated approach characterizations reveal that the exceptional configuration and spontaneous self-organization behavior of BTT-Out trimer could pre-swell the D18 network to facilitate the acceptor's infiltration and accelerate the formation of D/A interfaces. This enhancement triggers the elevated polarons formation with amplified hole-transfer kinetics, which is essential for the augmented exciton splitting efficiency. Furthermore, the regulated swelling process can initiate the favorable self-assembly of L8-BO acceptors, which would ameliorate carrier transport channels and mitigate carrier traps. As a result, the TIP-modified thin-film OSC devices achieve the champion performance of 20.3% (thin-film) and 18.8% (thick-film) with upgraded stability, among one of the highest performances reported of thick-film OSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiO x : Effect of Thickness and Temperature

Black phosphorus (BP) is one of new 2D materials that have attracted wide attention. This work reports the interfacial thermal conductance between BP flake and SiO x using Raman spectroscopy. From 293 K down to the 223 K, eight BP flakes in a thickness range of 16.6–113.7 nm are characterized. At 293 K, the largest interfacial thermal conductance is 1.14 × 10 8 W m −2 K −1 for a 82.1 nm thick BP flake, and the smallest one is 2.17 × 10 7 W m −2 K −1 for a 26.6 nm thick BP flake. Such large interfacial thermal conductance can be attributed to the excellent interface contact and strong phonon coupling between BP and SiO x . Furthermore, the measured interfacial thermal conductance has a one‐fold up to around four‐fold increase with decreased temperature from 293 to 223 K, which is a result of thermal‐expansion‐mismatch induced variation in the morphology of BP flakes. Additionally, it demonstrates no thickness‐dependent behavior. It is speculated the intrinsic thickness dependence is weak and is overshadowed by the large variation in the interface contact of different samples. As a new 2D material, BP shows great potential to be a thermal interface material for heat dissipation in electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Shear-band thickness and shear-band cavities in a Zr-based metallic glass

Strain localization into shear bands in metallic glasses is typically described as a mechanism that occurs at the nano-scale, leaving behind a shear defect with a thickness of 10–20 nm. Here we sample the structure of a single system-spanning shear band that has carried all plastic flow with high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and high-energy x-ray tomography (XRT). It is found that the shear-band thickness and the density change relative to the matrix sensitively depend on position along the shear band. A wide distribution of shear-band thickness (10 nm–210 nm) and density change (–1% to –12%) is revealed. There is no obvious correlation between shear-band thickness and density change, but larger thicknesses correspond typically to higher density changes. More than 100 micron-size shear-band cavities were identified on the shear-band plane, and their three-dimensional arrangement suggests a strongly fluctuating local curvature of the shear plane. As a result, these findings urge for a more complex view of a shear band than a simple nano-scale planar defect.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Enhanced through-thickness electrical conductivity and lightning strike damage response of interleaved vertically aligned short carbon fiber composites

Through-thickness electrical conductivity of carbon fiber reinforced polymers (CFRPs) is a key characteristic that determines the severity of lighting strike-induced damage. Carbon Fibers (CFs) are inherently electrically conductive and therefore provide high conductivity in the direction of the fiber orientation. However, electrical conductivities through the thickness and orthogonal to the CF orientation in CFRPs are governed by the insulating polymer matrix present between CFs. Here, in this work, through the thickness alignment of short CFs in between layers of CFRP laminates is demonstrated to improve the through-thickness electrical conductivity. Composites with interleaved vertically aligned short CF fibers (<150 μm) will be referred as V-fiber composites hereafter. The effect of the V-fiber on the lightning strike damage is evaluated against an artificial lightning strike of 100 kA (modified waveform A of SAE ARP-5412B standard). The improved through-thickness electrical conductivity of CFRP laminates (1.15 S/cm) through vertical alignment of short CFs was compared to reference CFRP laminates (0.13 S/cm) and was found to dissipate the artificial lightning strike current more efficiently. The surface damage after the artificial lightning strike in the V-fiber composites was reduced to 12.69 cm 2 compared to the reference CFRP surface damage of 57.67 cm 2 , a 78% reduction. It was also demonstrated that Joule heat generated due to lightning strike on the composites was significantly less than the reference sample using infrared (IR) thermography. A high retention (up to 78%) of flexural properties (modulus and strength) was observed in V-fiber composites post lightning strike impact as compared to only 47% retention in the reference panel.

42 ENGINEERING↗
DOE OSTI2020

Pulsed laminar falling films in vertical tubes: Maintaining a continuous liquid film with reduced film thickness

Falling-liquid-film heat transfer is important to a wide variety of industrial applications, including two-phase thermosyphons, falling-film evaporators in the food industry, heat exchangers in fuel-ethanol processing, and the chemical service industry. Particularly for laminar falling films, the heat transfer increases as the film thickness decreases, hence it is desirable to keep the films as thin as possible. This article presents a periodically-pulsed flow concept to reduce the average mass flow inside a vertical tube. The technique provides thinner films than can be achieved with continuous flow. A drainage model is adopted to predict the film thickness as a function of flow rate and location along the tube. The concept is confirmed experimentally by measuring the film thickness in real time in a circular tube using a laser-based absorption technique. A new heat-transfer-based film continuity measurement is also integrated into the optical film measurement setup. Water at ambient temperature and pressure is used for this work. Film thickness reductions of up to 60%, and liquid-film volume-flow reductions of up to 80% compared to the minimum continuous-flow film have been obtained. The time-varying film thickness profile can also be controlled to a limited extent, which may be of interest for process industries.

42 ENGINEERING↗
DOE OSTI2015

Thickness and UV irradiation effects on the gas sensing properties of Te thin films

Highlights: • Tellurium thin films were prepared by thermal evaporation technique. • Tellurium thin films showed excellent gas-sensing properties to H{sub 2}S at room temperature. • Tellurium showed a remarkably enhanced response to H{sub 2}S gas under UV irradiation. • The reason of the enhanced response by UV irradiation was discussed. - Abstract: In this research, tellurium thin films were investigated for use as hydrogen sulfide gas sensors. To this end, a tellurium thin film has been deposited on Al{sub 2}O{sub 3} substrates by thermal evaporation, and the influence of thickness on the sensitivity of the tellurium thin film for measuring H{sub 2}S gas is studied. XRD patterns indicate that as the thickness increases, the crystallization improves. Observing the images obtained by SEM, it is seen that the grain size increases as the thickness increases. Studying the effect of thickness on H{sub 2}S gas measurement, it became obvious that as the thickness increases, the sensitivity decreases and the response and recovery times increase. To improve the response and recovery times of the tellurium thin film for measuring H{sub 2}S gas, the influence of UV radiation while measuring H{sub 2}S gas was also investigated. The results indicate that the response and recovery times strongly decrease using UV radiation.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition

Highlights: • High quality AlGaN/InGaN heterostructures are grown and the effects of InGaN channel thickness on the structural and transport properties are investigated in detailed. • A high electron mobility of 1712 cm{sup 2}/Vis achieved for the heterostructures with an optimum channel thickness of 21 nm, indicating the huge potential of InGaN channel heterostructures in high frequency and high power applications. • The analyze method in this work can be generalized to both the studies of InGaN channel heterostructures with arbitrary component and all the heterostructures with inserted channel. - Abstract: High-quality AlGaN/InGaN heterostructures are grown and the effects of InGaN channel thickness on the structure and transport properties are investigated. With the increase of InGaN channel thickness from 7 nm to 28 nm, the two-dimensional electron gas density decreases continuously, while the mobility shows a trend of increasing at first, and then decreasing. The optimum thickness of 21 nm is obtained for the In{sub 0.05}Ga{sub 0.95}N channel, achieving a high electron mobility of 1712 cm{sup 2}/V, which indicates the huge potential for InGaN channel heterostructures in high-frequency and high-power applications. The variation in transport properties is studied by analyzing the structure formation, material quality, and interface characteristic in detail. The results are not only beneficial for the further study of the InGaN channel heterostructures, but also instructive for the other inserted channel system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Impact of ferromagnetic electrode length and thickness on Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSD)

A knowledge gap exists about the impact of variation in length and thickness of ferromagnetic(FM) electrodes on molecular spintronics devices’ ability to manifest molecular coupling impact. Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSDs) are potential candidates for inventing highly correlated materials and devices and investigating the fundamental science of organic spintronics. This paper reports our experi- mental observations providing the dramatic impact of variation in ferromagnetic electrode length and thickness on paramagnetic molecule-based MTJMSD. Room temperature transport studies were performed to investigate the effect of FM electrode thickness. On the other hand, magnetic force microscopy measurements were con- ducted to understand the effect of FM electrode length extending beyond the molecular junction area, i.e., the site where paramagnetic molecules bridged between two FM. In the strong molecular coupling regime, transport study suggested thickness variation caused ~1000 to million-fold differences in junction conductivity. MFM study revealed near-zero magnetic contrast for pillar-shaped MTJMSD without any extended FM electrode. However, MFM images showed a multitude of microscopic magnetic phases on cross junction shaped MTJMSD where FM electrodes extended beyond the junction area. To understand the intriguing experimental results, we conducted an in-depth theoretical study using Monte Carlo Simulation (MCS) approach. MCS study utilized a Heisenberg atomic model of cross junction shaped MTJMSD to gain insights about room temperature transport and MFM experimental observations of microscopic MTJMSD. To make this study applicable for a wide variety of MTJMSDs, we systematically studied the effect of variation in molecular coupling strength between magnetic molecules and ferromagnetic (FM) electrodes of various dimensions. Here, our theoretical results suggest 25 atoms thick FM electrode show very weak molecular coupling impact and of the same order of experimentally studied FM electrode dimensions showing weak effect. Also, MCS results agree with experimentally observed multiple magnetic phases on lengthy FM electrodes of an MTJMSD.

42 ENGINEERING↗
DOE OSTI2016

Scanning angle Raman spectroscopy: A nondestructive method for simultaneously determining mixed polymer fractional composition and film thickness

A scanning angle (SA) Raman spectroscopy method was developed to simultaneously measure the chemical composition and thickness of waveguide mixed polymer films with varying fractional compositions. In order to test the method, six films of polystyrene-block-poly(methyl methacrylate), some mixed with poly(methyl methacrylate) homopolymer (PS-b-PMMA:PMMA), and two films of poly(2-vinylnapthalene)-block-poly(methyl methacrylate) (P2VN-b-PMMA) were prepared. The film thickness ranged from 495 to 971 nm. The chemical composition and thickness of PS-b-PMMA:PMMA films was varied by the addition of the PMMA homopolymer and annealing the films in toluene. SA Raman peak amplitude ratios (1001 cm -1 for PS, 812 cm -1 for PMMA, and 1388 cm -1 for P2VN) were used to calculate the refractive index of the polymer film, an input parameter in calculations of the sum square electric field (SSEF). The film thickness was determined by SSEF models of the experimental Raman amplitudes versus the incident angle of light. The average film thickness determined by the developed SA Raman spectroscopy method was within 5% of the value determined by optical profilometry. In conclusion, SA Raman spectroscopy will be useful for in situ label-free analyses of mixed polymer waveguide films.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of silicon oxide thickness on polysilicon based passivated contacts for high-efficiency crystalline silicon solar cells

In this paper, we have investigated the effect of SiO x thickness (1-3 nm) on the performance of polycrystalline (poly) Si/SiO x /monocrystalline Si ( c -Si) passivated contacts. Our results show that for both n- and p-type contacts, there is an optimum SiO x thickness of 1.4-1.6 nm for obtaining the highest implied open-circuit voltage ( i-V oc ) values of ~739 and ~700 mV, respectively. For contacts with SiO x thicker than 1.6 nm, the i-V oc drops due to reduced field-effect passivation. We attribute this to the fact that a thicker SiO x layer hinders the diffusion of both n- and p-type dopants into the c-Si wafer resulting in a junction that is very close to the c -Si/SiO x interface, which increases carrier recombination most likely due to the presence of defects at this interface. The resistivity measured through the metal/poly-Si/SiO x / c -Si stack is independent of SiO x thickness up to 1.6 nm, and increases exponentially by several orders of magnitude with further increase in SiO x thickness due to inefficient tunneling transport. Finally, the extent of metallization-induced degradation of the poly-Si/SiO x / c -Si contacts is worst for the thinnest SiO x investigated (~1 nm), and interestingly it is not completely mitigated even for a ~3 nm thick SiO x .

14 SOLAR ENERGY↗
DOE OSTI2021

Measurement of Poly-Si Film Thickness on Textured Surfaces by X-Ray Diffraction in Poly-Si/SiOx Passivating Contacts for Monocrystalline Si Solar Cells

Polycrystalline Silicon on tunneling silicon oxide (poly-Si/SiOx) passivating contacts have shown great potential for the next-generation monocrystalline Si (c-Si) industrial photovoltaic technology. However, these cells typically suffer from strong parasitic absorption in the thick front poly-Si layer, which is designed to reduce metal-induced recombination. In previous work, we demonstrated an improved short-circuit current density, Jsc, by thinning the front poly-Si film in an SF6 plasma using the front metal grids as a self-aligned mask, but the sub - 100 nm thick poly-Si film is difficult to measure on an alkaline textured surface. Conventional optical techniques such as spectroscopic ellipsometry cannot be used due to the high scattering nature of the random pyramids. At poly-Si thicknesses below 50 nm, secondary electron microscopy (SEM) has difficulty distinguishing the poly-Si from the underlying c-Si substrate. Here, we demonstrate X-ray diffraction as an effective method to quantitatively measure the front poly-Si thickness. The thickness calculated from the diffraction peak height of the Si(111) crystallographic plane agrees well with the cross-section SEM analysis and simulations using SunSolve. We show that by thinning the front poly-Si from 200 to 60 nm, Jsc increased by 2.4 mA/cm2, while maintaining the same Voc. This led to an absolute efficiency gain of 1.73%. In addition, we also discuss possible reasons for the premature loss of passivation before the removal of all poly-Si, which prevented an even higher gain in Jsc.

light/electron beam induced current↗
DOE OSTI2020

On the theoretical limitations in estimating thickness of a plate-like structure from a full-field single-tone response Lamb wave measurement

A persistent question in wavenumber analysis in the estimation of thickness from a steady-state wave field is identifying the theoretical sensitivity of the system. Here, a well-known trade-off between spatial frequency/wavenumber resolution and thickness resolution exists. The current work presents a calculation of the Cramer-Rao Lower bound (CRLB), specifically as applied to thickness estimates, for a 2-dimensional multi-mode waveform in Gaussian noise. Cases of near-field and far-field excitation are considered, and transducer position with respect to the scan area is also varied. Additionally, we consider the CRLB in a plate with multiple sources, simulated as sources placed on the boundary of the plate. We conclude by presenting the CRLB values in terms of frequency for various thicknesses, and by presenting optimal excitation frequencies for a nominal thickness, based on the CRLB.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Direct Synthesis of Six-Monolayer (1.9 nm) Thick Zinc-Blende CdSe Nanoplatelets Emitting at 585 nm

Here, quasi-two-dimensional semiconductor nanoplatelets (NPLs) have garnered widespread interest because of their uniquely narrow emission spectra and favorable characteristics for optical gain and lasing.(1–5) Strongly quantum confined along thickness, NPLs exhibit the electronic structure of quantum wells determined by their thickness, which can be controlled with atomic precision.(6–10) Among all semiconductor NPLs, CdSe NPLs are probably the most studied. So far, four kinds of CdSe NPLs, emitting at around 396 nm, 463 nm, 513m, and 553 nm, have been intensely investigated for almost a decade.(11–18) Despite some early confusions in identifying actual thicknesses of those NPLs, they have been successfully assigned to be 2-monolayer (2 ML) to 5-monolayer (5 ML) thickness by high-resolution TEM.(19) Here, nML thickness corresponds to n chalcogen layers sandwiched between n + 1 metal layers. Another kind of NPLs with 6MLs of CdSe, once briefly mentioned in 2013,(20) however, was not explored, likely because its synthesis proved hard to reproduce. The 6 ML CdSe NPLs can be prepared by the colloidal atomic layer deposition (c-ALD) method,(21) but there have been no reports on direct synthesis of 6 ML CdSe NPLs, and their direct synthesis has been in doubt as being difficult by traditional approaches.(22,23)

36 MATERIALS SCIENCE↗
DOE OSTI2019

Thicknesses of Chemically Altered Zones in Shale Matrices Resulting from Interactions with Hydraulic Fracturing Fluid

Hydraulic fracturing of unconventional shale reservoirs increases the fracture network surface area to access hydrocarbons from the low permeability rock matrix. Porosity and permeability of the matrix, through which hydrocarbons migrate to fractures, are important for determining production efficiency and can be altered by chemical interactions between shale and hydraulic fracturing fluids (HFFs). Here, we present results from an experimental study that characterizes the thickness of the alteration zone in the shale matrix after shale–HFF interactions. Experiments were conducted with whole cores submerged in HFF both with and without added barium and sulfate to promote barite scale formation. After 3 weeks of reaction at 77 bar and 80°C, the cores were characterized using X-ray microtomography, synchrotron X-ray fluorescence microprobe imaging, and synchrotron X-ray absorption spectroscopy. Our results show that the thickness of the altered zone depends on shale mineralogical composition and varies for different chemical reactions. Reactions between the low-carbonate Marcellus shale and HFF, pyrite (FeS 2 ) oxidation manifests as both a thick zone of sulfur oxidation (>0.5 cm) and a thinner zone of iron oxidation (100–150 $μ$m). Carbonate dissolution extended 100–200 μm into the matrix, with the resulting observable secondary porosity localized at the shale–fluid interface where mineral grains were removed by either dissolution or mechanical erosion. In solutions oversaturated with respect to barite, barite precipitates were observed in the reaction fluid and at the shal–HFF interface. In contrast, the carbonate dissolution zone in the high-carbonate Eagle Ford was only 30–40 μm thick, within which a uniform texture of increased porosity was observed. Pyrite oxidation in the Eagle Ford was evident from an iron oxidation zone (150–200 μm thick), while sulfur oxidation was minor and hard to observe. Barite precipitation extended 1–2 mm into the matrix when the initial HFF was oversaturated with respect to barite, filling shale microcracks down to the submicrometer length scale. Our findings provide a scientific basis to predict the extent of chemical alteration in shale reservoirs during hydraulic fracturing and its impacts on hydrocarbon production.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Unraveling the Effects of Hierarchical Bimodal Microscale Porosity on Thick Electrodes

The thick electrode design is preferential in high-energy lithium-ion batteries (LIBs) systems. However, the sluggish ionic transport in homogeneous porous thick electrodes severely limits the areal capacity at high charging/discharging rates. The hierarchical porous design is a promising approach to mitigate kinetic limitations because it can distribute mass effectively in natural systems. In this study, the effects of bimodal microscale pores are fully investigated in thick electrodes from both architectural and electrochemical perspectives. Notably, by introduction of the bimodal microscale porous structure, the rate capability improves remarkably in thick electrodes with a low porosity (39%). Herein, by combining experimental results with simulations, this work presents a rational design guideline for preparing thick electrodes with a porosity at the commercial level, as well as simultaneous high energy and power densities, which brings new insights into the advanced electrode architecture design in scalable high-energy and high-power energy storage systems for practical applications.

25 ENERGY STORAGE↗
DOE OSTI2018

Thickness Limit for Alignment of Block Copolymer Films Using Solvent Vapor Annealing with Shear

The swelling and deswelling of a cross-linked polydimethylsiloxane (PDMS) pad adhered to a block copolymer (BCP) film during solvent vapor annealing (SVA) provides sufficient shear force to produce highly aligned domains over macroscopic dimensions in thin films. Here in this paper, we examine how far this alignment can propagate through the thickness of a BCP film to understand the limits for efficacy of the SVA-S (SVA with shear) process. Films of cylinder-forming polystyrene-block-polyisoprene-block-polystyrene (SIS) ranging from 100 nm to more than 100 μm are examined using the same processing conditions. The SIS surface in contact with the PDMS is always well-aligned, with Herman’s orientation parameter (S) exceeding 0.9 as determined from AFM micrographs, but the bottom surface in contact with the silicon wafer is not aligned for the thickest films. The average orientation through the film thickness was determined by transmission small-angle X-ray scattering (SAXS), with S decreasing gradually with increasing thickness for SIS films thinner than 24 μm, but S remains >0.8. S precipitously decreases for thicker films. A stop-etch-image approach allows the gradient in orientation through the thickness to be elucidated. The integration of this local orientation profile agrees with the average S obtained from SAXS. These results demonstrate the effective alignment of supported thick BCP films of order 10 μm, which could be useful for BCP coatings for optical applications.

36 MATERIALS SCIENCE↗