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Fabrication technique produces field aided lateral PNP transistors compatible with micropower switching circuits. The sub-collector diffusion is performed with phosphorus as the dopant and the epitaxy is grown using the higher temperature silicon tetrachloride process.
Chemical processes in silicon carbide due to reactive deposition and chemical conversion, noting silicon growth mechanism involving outward diffusion
Source abundances of cosmic ray nuclei from silicon burning process in supernovae
MOS/silicon-on-sapphire (SOS) technology is shown to permit the realization of large-scale integrated arrays that combine the best features of monolithic bipolar and MOS technologies. The perfect isolation and reduced capacitance of SOS technology make possible static MOS circuits with nearly an order-of-magnitude improvement in speed and dynamic power dissipation over their monolithic counterparts. CMOS/SOS memory arrays have been fabricated with speeds comparable to TTL bipolar memory arrays even when operated at TTL compatible levels. Quiescent power dissipation of two described arrays is typically less than 1 microwatt/bit. The SOS/MOS technology is compatible with both aluminum and self-aligned silicon-gate processing.
Single-crystal sheets pulled from polten silicon floating on refractory melt require no slicing or polishing. Possible materials are chlorides and fluorides of barium, calcium, and strontium. Refractory melt may be able to absorb impurities from silicon and thus obviate postgrowth purification.
Carbon, as a reductant for quartz, must be made available so as to have suitable reactivity in conjunction with high purity, especially with respect to boron and phosphorus. A detailed experimental plan was developed to do this. Different sources of carbon were selected to be subjected to various purification methods and reactivity-enhancement processes. A developmental scale arc furnace was installed to perform quartz-carbon reactivity testing.
The potential role of superalloys, refractory alloys, and ceramics in the hottest sections of engines operating with turbine inlet temperatures as high as 1370 C is examined. The convential superalloys, directionally solidified eutectics, oxide dispersion strenghened alloys, and tungsten fiber reinforced superalloys are reviewed and compared on the basis of maximum turbine blade temperature capability. Improved high temperature protective coatings and special fabrication techniques for these advanced alloys are discussed. Chromium, columbium, molybdenum, tantalum, and tungsten alloys are also reviewed. Molbdenum alloys are found to be the most suitable for mass produced turbine wheels. Various forms and fabrication processes for silicon nitride, silicon carbide, and SIALON's are investigated for use in highstress and medium stress high temperature environments.
Charge transfer devices (CTDs) are superior to the image dissector as stellar tracking sensors, considering their low voltage requirements, insensitivity to magnetic fields, good linearity, and low weight and power. An analysis of one type of CTD, called the charge injection device (CID), revealed an X-Y addressing capability which provides exceptional flexibility in array readout and results in enhanced S/N capability, a surface channel device which produces a larger dynamic range of operation, and exceptional and unique tolerance to optical overloads. A 128 row by 128 column CID array processed on silicon was evaluated in a cooled breadboard camera, and measured results indicate projected performance parameters of a large area CID array as follows: 20 micron square sensing site, noise not greater than 25 carriers per pixel, quantum yield of approximately 40% from 0.4 to 1.0 micron, and cooling requirements on the order of 0 degrees C.
It is noted that currently available reaction bonded silicon nitride (RBSN) materials are limited by relatively low strength (up to 300 MPa) and oxidation resistance, primarily due to open porosity. Attention is given to technology that was developed and used to produce an improved grade of injection molded RBSN having a density of 2.8 g/cc, with significantly decreased open porosity and a strength exceeding 350 MPa. It is shown that these results are primarily due to advances in two areas: silicon powder processing, and nitriding technique. A comparison of room temperature strength and oxidation resistance of the new material with that of state-of-the-art RBSN, showed significant improvements. It is concluded that turbine stator vanes were produced to show that this improved RBSN technology has been reduced to engineering practice.
The Dow Corning approach to increasing the resistivity of solar-grade silicon from about 0.04 ohm-cm (40 ppma B) to greater than 0.1 ohm-cm (10 ppma B) involves the use of high-purity raw materials carbothermically reduced in a specially designed electric arc furnace. Final purification occurs during Czochralski crystal growth of a polycrystalline ingot. This small-scale purification technology has resulted in silicon that has been fabricated into solar cells with a maximum AM1 conversion efficiency of 13.4%.
The correlation between the yield of silicon microcircuits wafers versus defects observed in X-ray topographs produced by a high speed curved wafer X-ray topographic camera was investigated. Most of the topographs were made after final wafer probe. Results indicated that most high volume silicon wafer processing does not need X-ray topography as a routine process control. It is further indicated that in changing any existing process or developing a new process the technique can be of significant benefit.
The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.
The process development continued, with a total of nine crystal growth runs. One of these was a 150 kg run of 5 crystals of approximately 30 kg each. Several machine and process problems were corrected and the 150 kg run was as successful as previous long runs on CG2000 RC's. The accelerated recharge and growth will be attempted when the development program resumes at full capacity in FY '82. The automation controls (Automatic Grower Light Computer System) were integrated to the seed dip temperature, shoulder, and diameter sensors on the CG2000 RC development grower. Test growths included four crystals, which were grown by the computer/sensor system from seed dip through tail off. This system will be integrated on the Mod CG2000 grower during the next quarter. The analytical task included the completion and preliminary testing of the gas chromatograph portion of the Furnace Atmosphere Analysis System. The system can detect CO concentrations and will be expanded to oxygen and water analysis in FY '82.
Direct inclusion of web-growth furnaces in production line expected to result in lower costs than current production processes using silicon wafers sliced from Czochralski boules. Silicon-web input capacity of line is 0.5 m2/min, which corresponds to total peak-power output of about 25 MW for 1 year of production. Line employs about 18 production people per shift and requires about 3,650 square feet of floorspace.
Progress made by the Flat-Plate Solar Array Project is described. Reports on silicon sheet growth and characterization, silicon material, process development, high-efficiency cells, environmental isolation, engineering sciences, and reliability physics are presented along with copies of visual presentations made at the 24th Project Integration Meeting.
Small area amorphous silicon solar cells generally have higher efficiencies than large interconnected submodules. Among the reasons for the differences in performance are the lack of large area uniformity, the effect of nonzero tin oxide sheet resistance, and possibly pinholes in the various layers. Another and usually small effect that can contribute to reduced performance of interconnected cells is the resistance of the interconnection i.e., the series resistance introduced by the metal to tin oxide contact through silicon. Proper processing problems to avoid poor contacts are discussed.
Topics addressed include: silicon sheet growth and characterization, silicon material, process development, high-efficiency cells, environmental isolation, engineering sciences, and reliability physics.
Progress made by the Flat-plate Solar Array (FSA) Project is described for the period July 1985 to April 1986. Included are reports on silicon sheet growth and characterization, silicon material, process development, high-efficienty cells, environmental isolation, engineering sciences, and reliability physics. Also included are technical and plenary presentations made at the 26th Project Integration Meeting (PIM) held on April 29 to 30 and May 1, 1986.