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All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Sharp Infrared Eyes The Journey of QWIPs from Concept to Large Inexpensive Sensitive Arrays in Hand-held Infrared Cameras

One of the simplest device realizations of the classic particle-in-a-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP). Optimization of the detector design and material growth and processing has culminated in the realization of a camera with a large (256x256 pixel) focal plane array of QWIPs which can see at 8.5 mu m, holding forth great promise for a variety of applications in the 6-25 mu m wavelength range.

Quantum Well Infrared Photodetector QWIP quantum m↗
NASA NTRS2004

Megapixel Multi-band QWIP Focal Plane Arrays

A mid-wavelength 1024x1024 pixel quantum well infrared photodetector (QW) focal plane array has been demonstrated with excellent imagery. Noise equivalent differential temperature (NETD) of 19 mK was achieved at 95K operating temperature with f/2.5 optics at 300K background. This focal plane array has shown background limited performance (BLIP) at 90K operating temperature with the same optics and background conditions. In this paper, we will discuss its performance in quantum efficiency, NETD, uniformity, and operability.

focal plane arrays↗
NASA NTRS2004

MWIR and LWIR Megapixel QWIP Focal Plane Arrays

A mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal plane array has been demonstrated with excellent imagery. MWIR focal plane has given noise equivalent differential temperature (NETD) of 19 mK at 95K operating temperature with f/2.5 optics at 300K background and LWIR focal plane has given NEDT of 13 mK at 70K operating temperature with same optical and background conditions as MWIR array. Both of these focal plane arrays have shown background limited performance (BLIP) at 90K and 70K operating temperatures with the same optics and background conditions. In this paper, we will discuss their performance in quantum efficiency, NETD, uniformity, and operability.

multi band↗
NASA NTRS2006

Towards Dualband Megapixel QWIP Focal Plane Arrays

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024 x 1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEDT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEDT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In addition, we have demonstrated MWIR and LWIR pixel co-registered simultaneously readable dualband QWIP focal plane arrays. In this paper, we will discuss the performance in terms of quantum efficiency, NEDT, uniformity, operability, and modulation transfer functions of the 1024 x 1024 pixel arrays and the progress of dualband QWIP focal plane array development work.

Infrared detectors↗
NASA NTRS2012

Thermal Imaging with Novel Infrared Focal Plane Arrays and Quantitative Analysis of Thermal Imagery

We have developed a single long-wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) camera for thermography. This camera has been used to measure the temperature profile of patients. A pixel coregistered simultaneously reading mid-wavelength infrared (MWIR)/LWIR dual-band QWIP camera was developed to improve the accuracy of temperature measurements especially with objects with unknown emissivity. Even the dualband measurement can provide inaccurate results due to the fact that emissivity is a function of wavelength. Thus we have been developing a four-band QWIP camera for accurate temperature measurement of remote object.

Thermography↗
NASA NTRS2018

Performance of the QWIP Focal Plane Array for NASA's Landsat 9 Mission

The flight focal plane array (FPA) for the Thermal Infrared Sensor 2 (TIRS-2) instrument, to be flown on Landsat 9, was built and characterized at NASA Goddard Space Flight Center (GSFC). The FPA was assembled using GaAs quantum well infrared photodetector (QWIP) arrays from the same lot as the TIRS instrument on Landsat 8. Each QWIP array is hybridized to an Indigo ISC9803 readout integrated circuit (ROIC) with 640 x 512, 25µm by 25µm pixels. Each QWIP hybrid was tested at the NASA/GSFC Detector Characterization Laboratory (DCL) as a single sensor chip assembly (SCA). The best SCAs in terms of performance were then built up into an FPA consisting of three SCAs, required to provide the necessary 15-degree field of view of the instrument. The FPA was tested to determine if project requirements were being met as a fully assembled unit. The performance of the QWIP SCAs and the fully assembled, NASA flight-qualified FPA will be reviewed.

Quantum well infrared photodiode↗
NASA NTRS2006

Multiple Waveband Temperature Sensor (MWTS)

This slide presentation reviews the development of Multiple Waveband Temperature Sensor (MWTS). The MWTS project will result in a highly stable, monolithically integrated, high resolution infrared detector array sensor that records registered thermal imagery in four infrared wavebands to infer dynamic temperature profiles on a laser-irradiated ground target. An accurate surface temperature measurement of a target in extreme environments in a non-intrusive manner is required. The development challenge is to: determine optimum wavebands (suitable for target temperatures, nature of the targets and environments) to measure accurate target surface temperature independent of the emissivity, integrate simultaneously readable multiband Quantum Well Infrared Photodetectors (QWIPs) in a single monolithic focal plane array (FPA) sensor and to integrate the hardware/software and system calibration for remote temperature measurements. The charge was therefore to develop and demonstrate a multiband infrared imaging camera with the detectors simultaneously sensitive to multiple distinct color bands for front surface temperature measurements Wavelength ( m) measurements. Amongst the requirements are: that the measurement system will not affect target dynamics or response to the laser irradiation and that the simplest criterion for spectral band selection is to choose those practically feasible spectral bands that create the most contrast between the objects or scenes of interest in the expected environmental conditions. There is in the presentation a review of the modeling and simulation of multi-wave infrared temperature measurement and also a review of the detector development and QWIP capacities.

infrared photodector↗
NASA NTRS2012

Multi-Color QWIP FPAs for Hyperspectral Thermal Emission Instruments

Infrared focal plane arrays (FPAs) covering broad mid- and long-IR spectral ranges are the central parts of the spectroscopic and imaging instruments in several Earth and planetary science missions. To be implemented in the space instrument these FPAs need to be large-format, uniform, reproducible, low-cost, low 1/f noise, and radiation hard. Quantum Well Infrared Photodetectors (QWIPs), which possess all needed characteristics, have a great potential for implementation in the space instruments. However a standard QWIP has only a relatively narrow spectral coverage. A multi-color QWIP, which is compromised of two or more detector stacks, can to be used to cover the broad spectral range of interest. We will discuss our recent work on development of multi-color QWIP for Hyperspectral Thermal Emission Spectrometer instruments. We developed QWIP compromising of two stacks centered at 9 and 10.5 ?m, and featuring 9 grating regions optimized to maximize the responsivity in the individual subbands across the 7.5-12 ?m spectral range. The demonstrated 1024x1024 QWIP FPA exhibited excellent performance with operability exceeding 99% and noise equivalent differential temperature of less than 15 mK across the entire 7.5-12 ?m spectral range.

Infrared focal plane arrays (FPAs)↗
NASA NTRS2004

Growing High-Quality InAs Quantum Dots for Infrared Lasers

An improved method of growing high-quality InAs quantum dots embedded in lattice-matched InGaAs quantum wells on InP substrates has been developed. InAs/InGaAs/InP quantum dot semiconductor lasers fabricated by this method are capable of operating at room temperature at wavelengths greater than or equal to 1.8 mm. Previously, InAs quantum dot lasers based on InP substrates have been reported only at low temperature of 77 K at a wavelength of 1.9 micrometers. In the present method, as in the prior method, one utilizes metalorganic vapor phase epitaxy to grow the aforementioned semiconductor structures. The development of the present method was prompted in part by the observation that when InAs quantum dots are deposited on an InGaAs layer, some of the InAs in the InGaAs layer becomes segregated from the layer and contributes to the formation of the InAs quantum dots. As a result, the quantum dots become highly nonuniform; some even exceed a critical thickness, beyond which they relax. In the present method, one covers the InGaAs layer with a thin layer of GaAs before depositing the InAs quantum dots. The purpose and effect of this thin GaAs layer is to suppress the segregation of InAs from the InGaAs layer, thereby enabling the InAs quantum dots to become nearly uniform (see figure). Devices fabricated by this method have shown near-room-temperature performance.

Qiu, Yueming↗
NASA NTRS2002

Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

InAs quantum dot↗
NASA NTRS1986

Field-dependent linewidths and photoluminescence energies in GaAs-AlGaAs multiquantum well modulators

Photoluminescence linewidths and transition energies have been measured in GaAs-AlGaAs multiple quantum wells with large (equal to or greater than 160 A) barrier widths as a function of applied transverse electric field. The experimental data agree well with values calculated by using a recently developed variational technique. It is apparent that heterointerface roughness is the dominant line broadening mechanism. The emission intensity decreases rapidly with field, principally due to carrier tunneling at high fields. At 80 kV/cm a shift of 20 meV in the emission energy is observed.

Juang, F.-Y.↗
NASA NTRS1990

Low dark current photovoltaic multiquantum well long wavelength infrared detectors

The authors have, for the first time, demonstrated photovoltaic detection for an multiple quantum well (MQW) detector. With a blocking layer, the MQW detector exhibits Schottky I-V characteristics with extremely low dark current and excellent ideality factor. The dark current is 5 times 10(exp -14) A for an 100x100 square micron 10 micron detector at 40 K, 8 to 9 orders of magnitude lower than that of a similar 10 micron MQW detector without blocking layer. The ideality factor is about 1.01 to 1.05 at T = 40 to 80 K. The measured barrier height is consistent with the energy difference between first excited states and ground states, or the peak of spectral response. The authors also, for the first time, report the measured effective Richardson constant (A asterisk asterisk) for the GaAs/AlGaAs heterojunction using this blocking layer structure. The A asterisk asterisk is low approx. 2.3 A/sq cm/K(exp 2).

Wu, C. S.↗
NASA NTRS2002

Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

nanotechnology DLTS optical properties pn diodes q↗
NASA NTRS1996

Technology Directions for the 21st Century, volume 1

For several decades, semiconductor device density and performance have been doubling about every 18 months (Moore's Law). With present photolithography techniques, this rate can continue for only about another 10 years. Continued improvement will need to rely on newer technologies. Transition from the current micron range for transistor size to the nanometer range will permit Moore's Law to operate well beyond 10 years. The technologies that will enable this extension include: single-electron transistors; quantum well devices; spin transistors; and nanotechnology and molecular engineering. Continuation of Moore's Law will rely on huge capital investments for manufacture as well as on new technologies. Much will depend on the fortunes of Intel, the premier chip manufacturer, which, in turn, depend on the development of mass-market applications and volume sales for chips of higher and higher density. The technology drivers are seen by different forecasters to include video/multimedia applications, digital signal processing, and business automation. Moore's Law will affect NASA in the areas of communications and space technology by reducing size and power requirements for data processing and data fusion functions to be performed onboard spacecraft. In addition, NASA will have the opportunity to be a pioneering contributor to nanotechnology research without incurring huge expenses.

Crimi, Giles F.↗