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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Decoupling and tuning competing effects of different types of defects on flux creep in irradiated YBa 2 Cu 3 O 7-δ coated conductors

YBa 2 Cu 3 O 7-δ coated conductors (CCs) have achieved high critical current densities (J c ) that can be further increased through the introduction of additional defects using particle irradiation. However, these gains are accompanied by increases in the flux creep rate, a manifestation of competition between the different types of defects. In this paper, we study this competition to better understand how to design pinning landscapes that simultaneously increase J c and reduce creep. CCs grown by metal organic deposition show non-monotonic changes in the temperature-dependent creep rate, S(T). Notably, in low fields, there is a conspicuous dip to low S as the temperature (T) increases from ~20 to ~65 K. Oxygen-, proton-, and Au-irradiation substantially increase S in this temperature range. Focusing on an oxygen-irradiated CC, we investigate the contribution of different types of irradiation-induced defects to the flux creep rate. Specifically, we study S(T) as we tune the relative density of point defects to larger defects by annealing both an as-grown and an irradiated CC in O 2 at temperatures T A = 250 °C–600 °C. Finally, we observe a steady decrease in S(T > 20 K) with increasing T A , unveiling the role of pre-existing nanoparticle precipitates in creating the dip in S(T) and point defects and clusters in increasing S at intermediate temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Implications of doping on microstructure, processing, and thermoelectric performance: The case of PbSe

Abstract In this work, we highlight the often-overlooked effects of doping on the microstructure and performance of bulk thermoelectric materials to offer a broader perspective on how dopants interact with their parent material. Using PbSe doped with Na, Ag, and K as a model material system, we combine original computational, experimental, and microscopy data with established trends in material behavior, to provide an in-depth discussion of the relationship between dopants, processing, and microstructure, and their effects on thermoelectric efficiency and thermal stability. Notable observations include differences in the microstructure and mass loss of thermally treated samples of Na- and Ag-doped PbSe, as well as findings that Na and K cations exist predominantly as substitutional point defects while Ag also occupies interstitial sites and exhibits lower solubility. We discuss how these differences in point defect populations are known to affect a dopants’ ability to alter carrier concentration and how they may affect the mechanical properties of PbSe during processing. Graphic Abstract

Grovogui, Jann A. (ORCID:0000000200481049)↗
DOE OSTI2019

Sink strength and dislocation bias of three-dimensional microstructures

Irradiation induces significant changes in the microstructure of structural materials, many of which are driven by the preferential capture of point defects at particular sinks, such as dislocations. To quantify the kinetics of defect absorption at sinks, theoretical models of radiation damage generally rely on the concept of sink strength. However, analytical approaches to estimating the sink strength of dislocations rely, in turn, on a series of geometrical assumptions, idealizing the dislocation network as a series of infinite straight dislocations or isolated loops, often with artificial boundary conditions. In this paper, we use a recently developed technique to quantify point defect capture in three-dimensional dislocation networks. We integrate this technique with discrete dislocation dynamics to analyze the sink strengths of realistic dislocation microstructures consisting of a mixture of edge, screw, and junction segments, complete with an accurate description of the strain fields these microstructures produce and the resultant energetic interactions experienced by point defects. Furthermore, we show that the effective kinetics for absorbing point defects can vary significantly with the arrangement of the microstructure with a strong dependence on the structure and character of its dislocation content and introduce a surrogate model for sink strength which incorporates these effects.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Machine learning pipeline to predict defect behavior in metallic alloy systems

The interaction between defect and solute atoms is critical to the thermodynamic and kinetic behavior of metallic alloys under exposure to high-energy radiation, causing irradiation damage in materials. Radiation can generate non-equilibrium concentrations of point defects such as vacancies and interstitials. The excess point defects not only accelerate diffusional processes such as precipitation that cause radiation embrittlement, but also change the pathway of phase transformations, including nucleation processes. Understanding these defect behaviors is complicated by the challenge and complexity of addressing each possible local and discrete distribution of environments and chemical interactions around targeted defects-solute or solute-solute complexes. To resolve the challenge, machine learning regression techniques have emerged as powerful tools that can train and construct an energy model to accurately describe the chemical interactions of solutes and defects. In Fiscal Year 2022, the work focused on the workflow development and demonstration using machine learning regression, density functional theory, cluster expansion, and Monte Carlo simulation to predict the effects of ternary solute elements (e.g., aluminum and molybdenum) and point defects on the Cr-rich $\alpha^{\prime}$ precipitation in multicomponent FeCr model alloys. The computational outcomes include the prediction of the ternary phase diagram, vacancy formation energy for different compositions, and the effect of vacancies on the nucleation of Cr-rich clusters. The simulations predict a pronounced change of Cr solubility in bcc Fe by the addition of Al and the rejection of Al atoms from $\alpha^{\prime}$ precipitates. Additionally, the simulations show the formation of Cr-vacancy clusters as the initial nuclei for stable nucleation and growth of $\alpha^{\prime}$ particles. The results demonstrate important outcomes and applications of using machine learning pipeline to study model or commercial alloys with multicomponent solute species and point defects.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Intrinsic Defect-Induced Local Semiconducting-to-Metallic Regions Within Monolayer 1T-TiS2 Displayed by First-Principles Calculations and Scanning Tunneling Microscopy

Using density functional theory (DFT) and scanning tunneling microscopy (STM), the intrinsic point defects, formation energy, and electronic structure of 1T-TiS2 were investigated. Defect systems include single-atom vacancies, interstitial and adatom additions, and direct atomic substitution. Using a collective approach for analyzing realistic systems for point defect investigation, we provide a more straightforward comparison to the experimental measurements, reproducing more realistic environmental conditions related to thin film growth. STM images are compared to computationally simulated electron density images to identify specific geometries that result from favorable point defects. DFT suggests that titanium interstitials are the most energetically favorable intrinsic defect, and sulfur vacancies are more likely to form than titanium vacancies within this realistic analysis, which is in agreement with STM data. A pristine, stoichiometric monolayer system is calculated to have a direct band gap of 0.422 eV, which varies based on local point defects. Local semiconducting-to-metallic electronic transitions are predicted to occur based on the presence of Ti interstitials.

Keeney, P. J.↗
DOE OSTI2016

Tutorial: Defects in semiconductors—Combining experiment and theory

Point defects affect or even completely determine physical and chemical properties of semiconductors. Characterization of point defects based on experimental techniques alone is often inconclusive. In such cases, the combination of experiment and theory is crucial to gain understanding of the system studied. Here in this tutorial, we explain how and when such comparison provides new understanding of the defect physics. More specifically, we focus on processes that can be analyzed or understood in terms of configuration coordinate diagrams of defects in their different charge states. These processes include light absorption, luminescence, and nonradiative capture of charge carriers. Recent theoretical developments to describe these processes are reviewed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Atomistic Modeling of Irradiation-Induced Defects and Clusters in Additively-Manufactured Austenitic Stainless Steel

Understanding the progression of irradiation-induced defects in real materials and alloys requires insight into the interaction between point defects, defect clusters, and the existing microstructure. This is particularly true when it comes to additively manufactured (AM) materials with complicated microstructures and residual stresses. In this work, we employ molecular dynamics (MD) to simulate the creation of point defects via primary radiation damage modeling and point defect interactions with extended defects such as voids and dislocations using simplified but representative alloy compositions. We analyze the effect of alloying elements on the formation energies of the defect clusters and measure interactions such as sink strengths and binding energies. This study provides insight into the unique behaviors of irradiation damage in AM materials and information necessary to bridge the gap in length and time scales to connect the atomistic behavior of defects to longer length scale simulations such as cluster dynamics.

36 MATERIALS SCIENCE↗
DOE OSTI2016

The generation and accumulation of interstitial atoms and vacancies in alloys with L1{sub 2} superstructure

The dependences of the point defect concentration (interstitial atoms and vacancies) on the deformation degree were calculated for the L1{sub 2} alloys with the high and low antiphase boundaries (APB) energy in terms of the mathematical model of the work and thermal strengthening of the alloys with the L1{sub 2} structure; the concentration of the point defects generated and annihilated in the process of deformation was estimated. It was found that the main part of the point defects generating during plastic deformation annihilates, the residual density of the deformation point defects does not exceed 10{sup −5}.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Theory of topological defects and textures in two-dimensional quantum orders with spontaneous symmetry breaking

In this article, we consider two-dimensional (2d) quantum many-body systems with long-range orders, where the only gapless excitations in the spectrum are Goldstone modes of spontaneously broken continuous symmetries. To understand the interplay between classical long-range order of local order parameters and quantum order of long-range entanglement in the ground states, we study the topological point defects and textures of order parameters in such systems. We show that the universal properties of point defects and textures are determined by the remnant symmetry enriched topological order in the symmetry-breaking ground states with a nonfluctuating order parameter, and provide a classification for their properties based on the inflation-restriction exact sequence. We highlight a few phenomena revealed by our theory framework. First, in the absence of intrinsic topological orders, we show a connection between the symmetry properties of point defects and textures to deconfined quantum criticality. Second, when the symmetry-breaking ground state has intrinsic topological orders, we show that the point defects can permute different anyons when braided around. They can also obey projective fusion rules in the sense that multiple vortices can fuse into an Abelian anyon, a phenomenon for which we coin “defect fractionalization.” Finally, we provide a formula to compute the fractional statistics and fractional quantum numbers carried by textures (skyrmions) in Abelian topological orders.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Defect interactions with stepped CeO{sub 2}/SrTiO{sub 3} interfaces: Implications for radiation damage evolution and fast ion conduction

Due to reduced dimensions and increased interfacial content, nanocomposite oxides offer improved functionalities in a wide variety of advanced technological applications, including their potential use as radiation tolerant materials. To better understand the role of interface structures in influencing the radiation damage tolerance of oxides, we have conducted atomistic calculations to elucidate the behavior of radiation-induced point defects (vacancies and interstitials) at interface steps in a model CeO{sub 2}/SrTiO{sub 3} system. We find that atomic-scale steps at the interface have substantial influence on the defect behavior, which ultimately dictate the material performance in hostile irradiation environments. Distinctive steps react dissimilarly to cation and anion defects, effectively becoming biased sinks for different types of defects. Steps also attract cation interstitials, leaving behind an excess of immobile vacancies. Further, defects introduce significant structural and chemical distortions primarily at the steps. These two factors are plausible origins for the enhanced amorphization at steps seen in our recent experiments. The present work indicates that comprehensive examination of the interaction of radiation-induced point defects with the atomic-scale topology and defect structure of heterointerfaces is essential to evaluate the radiation tolerance of nanocomposites. Finally, our results have implications for other applications, such as fast ion conduction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

A Tunable Eight-Wavelength Terahertz Modulator Based on Photonic Crystals

We propose a tunable eight-wavelength terahertz modulator based on a structure of triple triangular lattice photonic crystals by using photonic crystals in the terahertz regime. The triple triangular lattice was formed by nesting circular, square, and triangular dielectric cylinders. Three square point defects were introduced into the perfect photonic crystal to produce eight defect modes. GaAs was used as the point defects to realize tunability. We used a structure with a reflecting barrier to achieve modulation at high transmission rate. The insertion loss and extinction ratio were 0.122 and 38.54 dB, respectively. The modulation rate was 0.788 dB. The performance of the eightwavelength terahertz modulator showed great potential for use in future terahertz communication systems.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Defect interactions and the role of complexes in the CdTe solar cell absorber

While the electrical and optical properties of most crystalline materials are determined by the point defects, the association of these defects into complexes may further alter material properties, introducing new important phenomena. The properties of isolated point defects in CdTe have attracted significant research efforts, yet understanding of the complex defects in this material remains insufficient. This paper investigates the thermodynamic aspects of defect association in chlorinated copper-doped CdTe absorbers from first principles, using a supercell approach with the range-separated hybrid exchange–correlation functional. Based on the complex association energies calculated for 76 defect reactions, we propose the most favorable pair complexes formed in Cl- and Cu-doped CdTe absorbers. Most of the complexes studied in this work appear to be harmful for p-doping and may be responsible for the performance instabilities observed in CdTe devices. We also discuss a plausible passivation mechanism that mitigates TeCd recombination centers during Cl treatment. We also consider the formation of larger defect clusters and segregation of the point defects on extended defects.

14 SOLAR ENERGY↗
DOE OSTI2022

Ab initio calculations for void swelling bias in α - and δ -plutonium

Void swelling can develop in materials under persistent irradiation when nonequilibrium vacancy and self-interstitial populations migrate under sufficiently asymmetric interaction biases. In conventional metals, the propensity is determined to the first approximation by comparing point-defect relaxation strains. We thus present DFT-based calculations of structures and formation energies and volumes of point defects in the α and the δ phases of plutonium. Here we discuss the pros and cons of various levels of electronic structure theory: spin polarization, spin-orbit coupling, and orbital polarization. Our results show that lattice defects in δ-Pu, in contrast to most fcc metals, have surprisingly small formation volumes. Equally unexpected are the large defect formation volumes found in the low-symmetry α-Pu phase. Both these unusual properties can be satisfactorily explained from defect-induced spin/orbital moment formation and destruction in the Pu phases. Surprisingly, the point defects in α-Pu are found to induce far larger transformation of the local electronic structure than in δ-Pu. When we use the calculated defect properties to estimate the classic void swelling bias in each of the phases, we find it to be unusually small in δ-Pu but likely much larger in α-Pu. Hence, swelling rates and mechanisms can diverge dramatically between the different phases of Pu. Especially in the transient regime before the formation of large defect clusters, the swelling rate of α-Pu can reliably be expected to be much larger than δ-Pu. However, accurate forecasts over longer times will require the conventional void-swelling theory to be modified to handle the complexities presented by the different Pu phases. As a case in point, we show the possible anomalous temperature dependence of vacancy properties in δ-Pu, caused by entropic contributions from defect-induced spin-lattice fluctuations. Such complications may affect defect-defect interactions and thus alter the void swelling bias.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Radiation-Enhanced Anion Transport in Hematite

The influence of radiation-induced (1 MeV energy H+ to ~0.1 dpa at 450°C), non-equilibrium point defect populations on mass transport is studied with an integrated campaign of experimental and theoretical methods. Using epitaxial thin films of hematite with embedded 18O tracer layers and nanoscale atom probe tomography measurements, it is shown that anion self-diffusion is enhanced by at least 2 orders of magnitude under irradiation compared to thermal diffusion alone. Complementary scanning transmission electron microscopy of vacuum annealed specimens, reveals associated microstructural changes in the oxide films, including local phase transformation to Fe3O4 and the development of nanoscale voids from vacancy coalescence. Point defect formation and migration energies were computed from density functional theory and applied within the context of chemical rate theory to analyze contributions from both interstitial and vacancy mechanisms to self-diffusion in thermal and irradiation conditions. Comparisons are made between calculated, literature and newly measured self-diffusion values, revealing good agreement on the magnitude of radiation-enhanced anion diffusion. Further, the model suggests a transition from vacancy to interstitialcy mechanisms at low temperatures and high oxygen activity, consistent with the varied activation energies reported from prior studies.

iron oxides, isotopic tracers, atom probe tomograp↗
DOE OSTI2016

A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]

Defects are critical to understanding the electronic properties of semiconducting compounds, for applications such as light-emitting diodes, transistors, photovoltaics, and thermoelectrics. In this review, we describe our work investigating defects in tetrahedrally bonded, multinary semiconductors, and discuss the place of our research within the context of publications by other groups. We applied experimental and theory techniques to understand point defects, structural disorder, and extended antisite defects in one semiconductor of interest for photovoltaic applications, Cu 2 SnS 3 . We contrast our findings on Cu 2 SnS 3 with other chemically related Cu-Sn-S compounds, as well as structurally related compounds such as Cu 2 ZnSnS 4 and Cu(In,Ga)Se 2 . We find that evaluation of point defects alone is not sufficient to understand defect behavior in multinary tetrahedrally bonded semiconductors. In the case of Cu 2 SnS 3 and Cu 2 ZnSnS 4 , structural disorder and entropy-driven cation clustering can result in nanoscale compositional inhomogeneities which detrimentally impact the electronic transport. Therefore, it is not sufficient to assess only the point defect behavior of new multinary tetrahedrally bonded compounds; effects such as structural disorder and extended antisite defects must also be considered. Altogether, this review provides a framework for evaluating tetrahedrally bonded semiconducting compounds with respect to their defect behavior for photovoltaic and other applications, and suggests new materials that may not be as prone to such imperfections.

14 SOLAR ENERGY↗
DOE OSTI2016

Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed in situ synchrotron X-ray diffraction

We report an anomalous lattice deformation of GaN layers grown on SiC(0001) by molecular beam epitaxy. The evolution of the lattice parameters during the growth of the GaN layers was measured by in situ synchrotron X-ray diffraction. The lattice parameters in the directions parallel and normal to the surface showed significant deviation from the elastic strains expected for lattice-mismatched films on substrates up to a thickness of 10 nm. The observed lattice deformation was well explained by the incorporation of hydrostatic strains due to point defects. The results indicate that the control of point defects in the initial stage of growth is important for fabricating GaN-based optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Rotational defects in cyclotrimethylene trinitramine (RDX) crystals

Cyclotrimethylene trinitramine (RDX) crystalizes in the orthorhombic α-phase at the ambient pressure and temperature. In principle, the point defects commonly found in monatomic crystals, such as vacancies and interstitials, may exist in RDX as well. However, in molecular crystals one encounters additional point defects associated with the distortion of the molecules. A set of rotational defects are described in this article. These are molecules which are located in the proper positions in the crystal but are rotated relative to the molecules in the perfect crystal, and their ring is slightly puckered. The energetic barriers for defect formation and for their annealing back to the perfect crystal configuration are computed using an atomistic model. It is shown that the formation energy of rotational defects is smaller than the vacancy formation energy. Such defects are identified in the cores of dislocations in RDX and hence their concentration in the crystal is expected to increase during plastic deformation. The importance of such point defects is related to their role in phonon scattering and in dislocation-mediated plastic deformation.

36 MATERIALS SCIENCE↗
NASA NTRS1984

Defect interactions in GaAs single crystals

The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

Gatos, H. C.↗