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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Long-lifetime ice particles in mixed-phase stratiform clouds: Quasi-steady and recycled growth

Lagrangian ice particle tracking is applied in both a 3-D time dependent velocity field produced by a Large Eddy Simulation cloud model and in a 2-D idealized field. It is found that more than 10% of ice particles have lifetimes longer than 1.5 hours, much longer than the large eddy turnover time or the time for a crystal to fall through the depth of a non-turbulent cloud. An analysis of trajectories in a 2-D idealized field shows that there are two types of long lifetime ice particles: quasi-steady and recycled growth. For quasi-steady growth, ice particles are suspended in the updraft velocity region for a long time. For recycled growth, ice particles are trapped in the large-eddy structures, and whether ice particles grow or evaporate depends on the ice relative humidity profile within the boundary layer. Some ice particles can grow after each cycle in the trapping region, until they are too large to be trapped, and thus have long lifetimes. Here, the relative contribution of the recycled ice particles to the cloud mean ice water content depends on both the dynamic and thermodynamic properties of the mixing layer. In particular, the total ice water content of a mixed phase cloud in a decoupled boundary layer can be much larger than that in a fully coupled boundary layer.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2018

Low-Temperature Absorption, Photoluminescence, and Lifetime of CsPbX 3 (X = Cl, Br, I) Nanocrystals

The absorption and photoluminescence, both steady–state and time–resolved, of CsPbX 3 (X = Cl, Br, I) nanocrystals are reported at temperatures ranging from 3 to 300 K. These measurements offer a unique window into the fundamental properties of this class of materials which is considered promising for light–emitting and detection devices. The bandgaps are shown to increase from low to high temperature, and none of the examined cesium–based perovskite nanocrystals exhibit a bandgap discontinuity in this temperature range suggesting constant crystal phase. Time–resolved measurements show that the radiative lifetime of the band–edge emission depends strongly on the halide ion and increases with heating. The increasing lifetime at higher temperatures is attributed primarily to free carriers produced from exciton fission, corroborated by the prevalence of excitonic character in absorption. Furthermore, the results particularly highlight many of the similarities in physical properties, such as low exciton binding energy and long lifetime, between CsPbI 3 and hybrid organic–inorganic plumbotrihalide perovskites.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Mitigation of Electrical Failure of Silver Nanowires under Current Flow and the Application for Long Lifetime Organic Light-Emitting Diodes

Here, the extended lifetime of organic light-emitting diodes (OLEDs) based on enhanced electrical stability of a silver nanowire (AgNW) transparent conductive electrode is reported. Specifically, in depth investigation is performed on the ability of atomic layer deposition deposited zinc oxide (ZnO) on AgNWs to render the nanowires electrically stable during electrical stressing at the range of operational current density used for OLED lighting. ZnO-coated AgNWs have been observed to show no electrical, optical, or morphological degradation, while pristine AgNW electrodes have become unusable for optoelectronic devices due to dramatic decreases in conductivity, transparency, and fragmentation of the nanowire network at ≈150 mA cm -2 . When fabricated into OLED substrates, resulting OLEDs fabricated on the ZnO-AgNW platform exhibit a 140% increase in lifetime when compared to OLEDs fabricated on indium tin oxide (ITO)/glass, and ≈20% when compared to OLEDs fabricated on AgNW based substrates. While both ZnO-coated and pristine AgNW substrates outperform ITO/glass due to the lower current densities required to drive the device, morphological stability in response to current stressing is responsible for the enhancement of lifetime of ZnO-AgNW based OLEDs compared to pristine AgNW based OLEDs.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements

Thin‐film photovoltaic device efficiencies are limited by carrier recombination, thus understanding recombination mechanisms is critical for performance improvements. Bulk minority carrier lifetime ( τ bulk ) is a critical parameter for solar cells but is difficult to determine in P–N junction devices, especially for high doping. As doping ≥10 16 cm −3 is required for efficient drift‐charge‐carrier‐collection devices, a method for τ bulk determination in doped P–N junction devices is necessary. This work utilizes time‐resolved photoluminescence (TRPL) simulations to quantify bulk and interface recombination properties in highly doped, graded absorber CdSeTe structures. The two methods developed here for τ bulk determination include utilization of an instantaneous lifetime representation to guide TRPL fitting and direct comparison between measured and simulated decays. Simulations verified that both methods are valid for state‐of‐the‐art device architectures which include graded bandgap absorbers, graded doping, and graded lifetimes. Shifts in the dominant recombination mechanism are identified for sufficiently long τ bulk , where front and back interface quality plays a more prominent role. Evaluation of surface recombination velocities and conduction band offset illustrate electro‐optical advantages of a positive conduction band offset and highlight the necessity of improved interfaces as bulk quality in photovoltaic devices improves.

14 SOLAR ENERGY↗
DOE OSTI2017

Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ~7 × 10 15 cm –3 , 8.4 × 10 16 cm –3 , and 8.4 × 10 17 cm –3 using iodine as dopant in DHs. Optical injection at 1 × 10 10 photons/pulse/cm 2 to 3 × 10 11 photons/pulse/cm 2 , corresponding to initial injection of photocarriers up to ~8 × 10 15 cm –3 , was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 10 15 cm –3 and 8.4 × 10 16 cm –3 . The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. Furthermore, the observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.

14 SOLAR ENERGY↗
DOE OSTI2020

Calculation of mode lifetimes in weakly anharmonic solids using self-consistent ensemble eigenstates of the Liouvillian

Recent schemes for the efficient calculation of vibrational mode frequencies and lifetimes in weakly anharmonic systems such as solid crystal structures have shown promise, with simple relationships being observed between low order moments of the Liouvillian and the observed lifetime. While only shown empirically, two parameters seemed sufficient to determine the lifetime to high accuracy over a large range of temperatures for a few simple low degree of freedom models and a Lennard–Jones solid. In this paper we analytically reproduce the numerically observed relationship using a few generally applicable assumptions about the density of states. This advance is made by studying the autocorrelation based on an “ensemble eigenstate” of the Liouvillian. We propose the use of this ensemble eigenstate as the basis for autocorrelations to simplify calculations in richer systems. Finally, an analysis is also performed of the relationship between canonical and microcanonical autocorrelation functions and a long standing error in the long time behavior of such functions originally presented by Sen, Sinkovits, and Chakravarti is corrected.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Predicting the creep-rupture lifetime of a cast austenitic stainless steel using Larson-Miller and Wilshire parametric approaches

An experimental dataset of just over 100 creep tests of a cast austenitic stainless steel, CF8C-Plus, was analyzed by two temperature-compensated parametric models (Larson-Miller, Wilshire et al.) to predict long-term lifetimes as functions of temperature and stress. The dataset and associated regression analyses showed greater scatter than typically found in recent similar studies of wrought Ni-based alloys by the same two models and was attributed to the microstructural inhomogeneity of the cast stainless steel. Qualitatively, the Larson-Miller formalism showed greater lifetime prediction accuracy than the Wilshire approach, with the latter model's predictive ability being particularly degraded by the presence of two very significant outlier results. This observation suggests that the Larson-Miller approach is more robust when treating rupture-time datasets that show particularly wide experimental scatter. Despite the differences in the overall predictive ability, both models yielded similar predictions of the applied stress at which CF8C-Plus would have a creep-limited lifetime of 100,000 h when loaded below the yield point.

36 MATERIALS SCIENCE↗
DOE OSTI2025

An accelerated framework for predicting creep rupture lifetimes in engineering alloys

Confidently predicting high-temperature deformation, including creep and creep rupture, is paramount for the design and commercialization of candidate materials for advanced nuclear energy systems. To accelerate creep quantification, we introduce a framework that enables rapid, cost-effective, and reliable prediction of creep rupture lifetimes, minimizing reliance on time-intensive bulk creep testing. Unlike conventional creep analysis, which requires extensive time and resources, our method leverages a maximum of four short-term bulk creep tests as training data for prediction. This framework combines high-throughput nanoindentation up to 700 °C with these targeted bulk tests to inform our creep rupture model in order to predict rupture lifetimes. The strong agreement between our predictions and conventional experimental data demonstrates the effectiveness of our approach for accelerated creep analysis and lifetime prediction of structural components in high-temperature applications. Our multi-pronged approach motivates further integration of computational tools and advanced instrumentation to establish a universal framework for understanding high-temperature material responses.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Development of the multi-purpose Cologne Compact Differential Plunger (CoCoDiff) for the measurement of nuclear level lifetimes with the Recoil Distance Doppler-shift method

Here, a new 3-foil plunger device, the Cologne Compact Differential (CoCoDiff) plunger has been built and commissioned. Due to its compact size, it can be used together with many different spectrometers and auxiliary detectors. As a commissioning experiment, level lifetimes of the $2^{+}_{1}$ and the $4^{+}_{1}$ excited states of 50 Cr have been measured, using the Differential Decay Curve method (DDCM). A derivation is given on how this method can be applied to a differential plunger measurement, in order to measure distances for lifetimes from two different regions of sensitivity at the same time. The commissioning experiment took place at the Cologne FN tandem accelerator, using the reaction 24 Mg( 32 S,4p2n) 50 Cr. Lifetimes, deduced from this measurement, agree well with literature values from earlier measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

An alternative viewpoint on the nuclear structure towards 100 Sn: Lifetime measurements in 105 Sn

This work aims at presenting an alternative approach to the long standing problem of the B(E2) values in Sn isotopes in the vicinity of the N=Z double-magic nucleus 100 Sn, until now predominantly measured with relativistic and intermediate-energy Coulomb excitation reactions. The direct measurement of the lifetime of low-lying excited states in odd-even Sn isotopes provides a new and precise guidance for the theoretical description of the nuclear structure in this region. Lifetime measurements have been performed in 105 Sn for the first time with the coincidence Recoil Distance Doppler Shift technique. The lifetime results for the $7/2^+_1$ first excited state and the $11/2^+_1$ state, $2^+ (^{104}$Sn) Ⓧ $v1g_{7/2}$ multiplet member, are discussed in comparison with state-of-the-art shell model and mean field calculations, highlighting the crucial contribution of proton excitation across the core of 100 Sn. The reduced transition probability B(E2) of the $11/2^+_1$ core-coupled state points out an enhanced staggering with respect to the B(E2; $2^+_1$ → $0^+_1$) in the even-mass 104 Sn and 106 Sn isotopes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2013

Photon-induced positron annihilation lifetime spectroscopy using ultrashort laser-Compton-scattered gamma-ray pulses

High-energy ultrashort gamma-ray pulses can be generated via laser Compton scattering with 90 Degree-Sign collisions at the UVSOR-II electron storage ring. As an applied study of ultrashort gamma-ray pulses, a new photon-induced positron annihilation lifetime spectroscopy approach has been developed. Ultrashort gamma-ray pulses with a maximum energy of 6.6 MeV and pulse width of 2.2 ps created positrons throughout bulk lead via pair production. Annihilation gamma rays were detected by a BaF{sub 2} scintillator mounted on a photomultiplier tube. A positron lifetime spectrum was obtained by measuring the time difference between the RF frequency of the electron storage ring and the detection time of the annihilation gamma rays. We calculated the response of the BaF{sub 2} scintillator and the time jitter caused by the variation in the total path length of the ultrashort gamma-ray pulses, annihilation gamma rays, and scintillation light using a Monte Carlo simulation code. The positron lifetime for bulk lead was successfully measured.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Determination of carrier lifetime and mobility in colloidal quantum dot films via impedance spectroscopy

Impedance Spectroscopy (IS) proves to be a powerful tool for the determination of carrier lifetime and majority carrier mobility in colloidal quantum dot films. We employ IS to determine the carrier lifetime in PbS quantum dot Schottky solar cells with Al and we verify the validity of the technique via transient photovoltage. We also present a simple approach based on an RC model that allows the determination of carrier mobility in PbS quantum dot films and we corroborate the results via comparison with space charge limited measurements. In summary, we demonstrate the potential of IS to characterize key-to-photovoltaics optoelectronic properties, carrier lifetime, and mobility, in a facile way.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Phonon lifetime in SiSn and its suitability for hot-carrier solar cells

We present a phononic and electronic study of SiSn in the zinc-blende phase. A detailed description of the longitudinal optical (LO) phonon decay in a three-phonon process is presented together with the corresponding lifetime. The necessity to go beyond the zone center phonon approximation in this case is highlighted as it reveals a steep dependence of the lifetime on the initial phonon wavenumber, which differs from usual semiconductors. The electronic band structure is calculated within the GW formalism and shows a small direct band gap. It is shown that the LO-phonon resulting from electron cooling has a lifetime four to eight orders of magnitude above all the known value in semiconductors for this process. We finally show the suitability of SiSn for hot-carrier solar cells, as it is endowed with ultra-slow cooling of hot carriers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Calculation of the extinction cross section and lifetime of a gold nanoparticle using FDTD simulations

The electromagnetic theory of light explains the behavior of light in most of the domains quite accurately. The problem arises when the exact solution of the Maxwell's equation is not present, in case of objects with arbitrary geometry. To find the extinction cross-section and lifetime of the gold nanoparticle, the software FDTD solutions 8.6 by Lumerical is employed. The extinction cross-sections and lifetimes of Gold nanospheres of different sizes and arrangements are studied using pulse lengths of the order of femtoseconds. The decay constant and other properties are compared. Further, the lifetimes are calculated using frequency and time domain calculations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Lifetime of the phonons in the PLT ceramic

The lifetimes at higher temperatures on lanthanum-modified lead titanate (PLT) are mainly due to the anharmonic decay of optical phonons into low-energy phonons. The temperature-independent contributions from inherent crystal defects and from boundary scattering become comparable to the phonon scattering contribution at lower temperatures. The thermal interaction is large at higher temperatures which decreases the phonon mean free path, and so the decay lifetime decreases as the temperature of the system is increased. This leads to the increased line width at higher temperatures. We made an estimate of the lifetimes for different concentrations and temperatures in PLT.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5 μs and (4.7 ± 0.4) × 10{sup 2 }cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179 ns is observed in the DH with a 2 μm thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

BiasMDP: Carrier lifetime characterization technique with applied bias voltage

A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon

This study demonstrates that the presence of a hydrogen source during fast-firing is critical to the regeneration of B-O defects and that is it not a pure thermally based mechanism or due to plasma exposure. Boron-doped p-type wafers were fired with and without hydrogen-rich silicon nitride (SiN{sub x}:H) films present during the fast-firing process. After an initial light-induced degradation step, only wafers fired with the SiN{sub x}:H films present were found to undergo permanent and complete recovery of lifetime during subsequent illuminated annealing. In comparison, wafers fired bare, i.e., without SiN{sub x}:H films present during firing, were found to demonstrate no permanent recovery in lifetime. Further, prior exposure to hydrogen-rich plasma processing was found to have no impact on permanent lifetime recovery in bare-fired wafers. This lends weight to a hydrogen-based model for B-O defect passivation and casts doubt on the role of non-hydrogen species in the permanent passivation of B-O defects in commercial-grade p-type Czochralski silicon wafers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗