Gallium Nitride Nonlocal Metasurfaces with Broken Vertical Symmetry
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Malek, Stephanie Claudia [Sandia National Laborato↗
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Chiral nonlocal metasurfaces in gallium nitride with lithographically-defined vertical symmetry breaking
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Malek, Stephanie Claudia [Sandia National Laborato↗
New method used to fabricate gallium arsenide photovoltaic device
A new method for fabricating photocells, or solar cells, substitutes copper iodide for zinc diffusion. This produces a p-type surface layer and a photovoltaic junction.
Ellis, S. G.↗
Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide Quarterly progress report, 1 Jul. - 30 Sep. 1968
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaAs
Pearson, G. L.↗
Two-port microwave amplification in long samples of gallium arsenide.
Two port traveling wave microwave amplifier using subcritically doped GaAs samples several space charge wavelengths long
Fay, B.↗
Absorption spectrum of nickel in gallium phosphide.
Optical absorption spectra of Ni impurity in GaP due to d shell transitions, measuring crystal field parameters, noting fine structure
Allen, J. W.↗
Two source evaporation of uniform thickness, gallium arsenide films.
Crucible arrangements for two source vacuum evaporation of thin GaAs films of uniform thickness
Nicol, W. S.↗
Gallium arsenide as a laser pump
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Randall, J. L.↗
Current oscillations in photoexcited gallium- arsenide.
Current oscillations in semiinsulating O and Cr doped GaAs samples at room temperature, noting photoconductivity excitation spectra
Viehmann, W.↗
Zinc diffusion into gallium phosphide under high and low phosphorus overpressure.
Depth and planarity of zinc diffused junctions in GaP using temperature, phosphorus overpressure and time as independent variables
Nygren, S. F.↗
Differential photo effects in gallium arsenide- metal junctions.
Alloying pairs of metal pellets to n and p type semiinsulating GaAs, discussing photo effects
Viehmann, W.↗
Gallium phosphide devices for use at high temperatures.
Schottky barrier diodes for high temperature operation prepared on n type GaP single crystals, studying I-V and C-V characteristics
Nannichi, Y.↗
Growth of single-crystal gallium nitride
Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces.
Clough, R.↗
Fundamental studies of the metallurgical, electrical and optical properties of gallium arsenide Quarterly progress report, 1 Oct. - 31 Dec. 1969
Melting points of GaP-metal systems and growth of GaP by vertical liquid epitaxy
Pearson, G. L.↗
Friction and contact resistance for low speed gallium lubricated sliding electrical contacts of beryllium in vacuum.
Low speed Ga lubricated sliding electrical contacts of Be in vacuum, discussing Ga film role in friction and contact resistance
Przybyszewski, J.↗
Ohmic contacts to solution-grown gallium arsenide
Carrier concentration profiles and surface resistance of Ohmic contacts to solution epitaxial n-type GaAs wafers measured by Schottky barrier capacitance
Day, G. F.↗
Solar abundance of gallium
Solar Ga abundance from spectral synthesis of region around 4172 A line
Aller, L.↗
Anisotropy in the conductivity of n-gallium arsenide
N type GaAs doped with Si, conductivity anisotropy observed from measurement and explanation in terms of electron distribution
Gaylord, T. K.↗