Extraction of Coulomb crystals with limited emittance growth
Explore the source record for details and available documents.
43 PARTICLE ACCELERATORS↗
SEARCH · Engineering Papers
Results for “emittance”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Proposed ultralow-emittance beam source for high-luminosity hadron colliders
Explore the source record for details and available documents.
43 PARTICLE ACCELERATORS↗
Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)
The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear side, in combination with advanced fine-line screen-printing metallization with floating busbars. During this research project, first we developed a technology roadmap to drive the 21% n-PERT cell efficiency from 21% to 23% by transforming the cell design to n-TOPCon and establishing the requirements for each layer, including B emitter, rear n-TOPCon, n-base Si and screen-printed contacts. Next, consistent with our roadmap, we developed advanced homogeneous implanted B emitter (150-180 Ω/⌫) passivated with ALD Al 2 O 3 layer capped with PECVD SiN x /SiO x double-layer antireflection coating This gave a very low recombination current density of 10-15 fA/cm 2 prior to metallization. In addition, we demonstrated metallized recombination current density of ~31 fA/cm 2 for this advanced homogeneous B emitter with industrial screen-printed, fire-through contacts with 40 μm wide grid lines, floating busbars and implementation of an advanced Ag-Al paste which resulted in local or reduced area metal-Si contact under the grid lines with virtually no emitter surface etching. This paste reduced the full area metallized J oe,metal from >1100 fA/cm 2 to ~700 fA/cm 2 . We also developed novel processes for the formation of p + /p ++ selective B emitter by a) single B diffusion with selective etch back and b) two-steps diffusion with implanted B in field region and APCVD B diffusion under the metal grid. We achieved very low un-metallized recombination current density (J 0 ) of ~18 fA/cm 2 for the selective p ++ p + emitters (30/150 Ω/⌫) and metallized J 0 of ~28 fA/cm 2 with ~3% screen-printed metal contact to p ++ regions. Next, we developed the technology for n-TOPCon by growing phosphorus-doped LPCVD and PECVD poly-Si on top of ~ 15Å chemically grown (NAO) tunnel oxide. After an optimized anneal at 875 °C for 30 min, passivated n-TOPCon have unmetallized J 0 of ~ 5 fA/cm 2 which went down further to ~ 1 fA/cm 2 after a 700 Å SiN x capping layer and simulated contact firing cycle at 770 °C. After screen-printed fire-through metallization on this n-TOPCon with ~13% metal coverage, metallized J 0 value increased to only ~5 fA/cm 2 which is among the lowest reported value to the best of our knowledge for screen-printed metallization. Finally, we integrated all the above technology innovations and enhancements and demonstrated low-cost manufacturable screen-printed n-TOPCon bifacial Si solar cell with ~23% efficiencies. Based on the experimental and theoretical understanding developed in this project, we have developed a new technology roadmap that shows that implementation of busbarless contacts, 10-20 ms bulk lifetime Si, and selective B emitter or selective TOPCon on the front can drive ~23% efficient cells achieved in this research to ~25% at low-cost.
14 SOLAR ENERGY↗
Mechanistic Understanding and Rational Design of Quantum Dot/Mediator Interfaces for Efficient Photon Upconversion
The semiconductor-nanocrystal-sensitized, three-component upconversion system has made great strides over the past 5 years. The three components (i.e., triplet photosensitizer, mediator, and emitter) each play critical roles in determining the input and output photon energy and overall quantum efficiency (QE). The nanocrystal photosensitizer converts the absorbed photon into singlet excitons and then triplet excitons via intersystem crossing. The mediator accepts the triplet exciton via either direct Dexter-type triplet energy transfer (TET) or sequential charge transfer (CT) while extending the exciton lifetime. Through a second triplet energy-transfer step from the mediator to the emitter, the latter is populated in its lowest excited triplet state. Triplet–triplet annihilation (TTA) between two triplet emitters generates the emitter in its bright singlet state, which then emits the upconverted photon. Quantum dots (QD) have a tunable band gap, large extinction coefficient, and small singlet–triplet energy losses compared to metal–ligand charge-transfer complexes. This high triplet exciton yield makes QDs good candidates for photosensitizers. In terms of driving triplet energy transfer, the triplet energy of the mediator should be slightly lower than the triplet exciton energy of the QD sensitizer for a downhill energy landscape with minimal energy loss. The same energy cascade is also required for the transfer from the mediator to the emitter. Lastly, the triplet energy of the emitter must be slightly larger than one-half of its singlet energy to ensure that TTA is exothermic. Optimization of the sensitizer, mediator, and emitter will lead to an increase in the anti-Stokes shift and the total quantum efficiency. Evaluating each individual step’s efficiency and kinetics is necessary for the understanding of the limiting factors in existing systems.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Organic light emitting diode with split emissive layer
An organic light emitting diode (OLED) device includes an emissive layer having a first sublayer with a first emitter as a dopant, a second sublayer with a second emitter as a dopant, and a third sublayer with a third emitter as a dopant. The second sublayer is between the first sublayer and the third sublayer. A concentration of the first emitter in the first sublayer exceeds a concentration of the third emitter in the third sublayer, and the concentration of the third emitter in the third sublayer exceeds a concentration of the second emitter in the second sublayer.
Li, Jian-Jun↗
Single shot cathode transverse momentum imaging in high brightness photoinjectors
In state of the art photoinjector electron sources, thermal emittance from photoemission dominates the final injector emittance. Therefore, low thermal emittance cathode developments and diagnostics are very important. Conventional thermal emittance measurements for the high gradient gun are time-consuming and thus thermal emittance is not measured as frequently as quantum efficiency during the lifetime of photocathodes, although both are important properties for the photoinjector optimizations. In this paper, a single shot measurement of photoemission transverse momentum, i.e., thermal emittance per rms laser spot size, is proposed for photocathode rf guns. By tuning the gun solenoid focusing, the electrons’ transverse momenta at the cathode are imaged to a downstream screen, which enables a single shot measurement of both the rms value and the detailed spectra of the photoelectrons’ transverse momenta. Both simulations and proof of principle experiments are reported.
43 PARTICLE ACCELERATORS↗
World Record Demonstration of > 30% Thermophotovoltaic Conversion Efficiency
Thermophotovoltaic (TPV) devices are solid-state heat engines that convert thermal radiation into electricity using semiconductor diodes, and have applications in energy storage, primary power conversion, and waste heat recovery. Higher temperature emitters and wider band gap photovoltaics (PVs) generally afford higher TPV efficiencies. High temperature emitters are accessible in thermal energy storage applications. We have demonstrated a world record 31% +/- 2% TPV conversion efficiency with a 0.9 cm2 GaAs-based PV device under a 2430 °C thermal emitter, producing an electrical output power of 2.23 W. Critical to the result was the cell’s high reflectance of photon energies below the device band gap. Unlike solar PV, for which sub-band gap (SBG) light is lost, a TPV cell can reflect and recycle SBG light to the thermal emitter. The demonstration was made on a custom-built measurement platform in which a ~100 cm2 graphite thermal emitter was heated under vacuum up to 2430 °C. The TPV efficiency was evaluated by comparing the measured electrical output power of the TPV with the calorimetrically measured total net power incident on the cell. The measured TPV efficiency as a function of thermal emitter temperature was corroborated by our full system modeling predictions. As far as the authors are aware, this is the highest TPV conversion efficiency ever measured, and device improvements should yield > 40% efficiency in the near future.
27 ARPA - Advanced Research Projects Agency-Energy↗
Superconducting RF Gun with High Current and the Capability to Generate Polarized Electron Beams
High-current low-emittance CW electron beams are indispensable for nuclear and high-energy physics fixed target and collider experiments, cooling high energy hadron beams, generating CW beams of monoenergetic X-rays (in FELs) and gamma-rays (in Compton sources). Polarization of electrons in these beams provides extra value by opening a new set of observables and frequently improving the data quality. We report on the upgrade of the unique and fully functional CW SRF 1.25 MeV SRF gun, built as part of the Coherent electron Cooling (CeC) project, which has demonstrated sustained CW operation with CsK2Sb photocathodes generating electron bunches with record-low transverse emittances and record-high bunch charge exceeding 10 nC. We propose to extend the capabilities of this system to high average current of 100 milliampere in two steps: increasing the current 30-fold at each step with the goal to demonstrate reliable long-term operation of the high-current low-emittance CW SRF guns. We also propose to test polarized GaAs photocathodes in the ultra-high vacuum (UHV) environment of the SRF gun, which has never been successfully demonstrated in RF accelerators.
43 PARTICLE ACCELERATORS↗
Dispersion Suppression for Wedge-Based Final Cooling at a 10 TeV Muon Collider
Achieving a luminosity of $\gtrsim 10^{34} cm^{-2} s^{-1}$ in a $10 \text{ } TeV$ Muon Collider, given the short lifetime of a muon, requires reducing the 6D emittance of the muon beam through a process known as ionization cooling. In the final stage of this cooling process, the transverse emittance must be reduced to $22 \text{ } μm$, typically by allowing longitudinal emittance growth up to downstream acceptance limits. While the current International Muon Collider Collaboration designs involve $40 \text{ } T$ solenoids to reach the transverse emittance target, such high-field solenoids come with several challenges, including mechanical stress management, quench protection, and potential limitations in relying on High Temperature Superconductor technology. Designed as an alternative to using such solenoids while simultaneously reaching target transverse emittance, the previously proposed wedge-based, reverse emittance-exchange cooling scheme requires excellent dispersion suppression. In this study, we design and simulate a dispersion suppressor channel for the wedge-based final cooling design that reduces dispersion in the target direction to a target value of $D_x \sim 0.001 \text{ } m$.
Karaaslan, I. [Chicago U.] (ORCID:0000000337849879↗
Low-Energy Cooling for Electron Ion Collider
Luminosity parameters at the highest hadron energy in the Electron Ion Collider (EIC) require a proton beam with a small vertical emittance. Such a small emittance can be obtained using the technique of electron cooling, by pre-cooling of the proton bunches at an injection energy of 23:8 GeV. After pre-cooling, the proton bunches are accelerated to the maximum energy for collisions. Once at the top energy, such proton bunches can be refilled frequently to maintain a high average luminosity, or, alternatively, cooling at the top energy could be provided with relaxed requirements of just counteracting the emittance growth due to Intra-Beam Scattering (IBS) and thus maintaining the luminosity close to its initial peak value. Presently, several schemes of cooling at the top energy of 275 GeV are being considered with the goal to maintain the initial proton beam parameters, thus relying on pre-cooling at the low energy to obtain such initial parameters of proton bunches. For the lowest proton collision energy of 41 GeV in the EIC, there is a need for an electron cooler which counteracts the beam emittance growth due to IBS. This can be achieved by the same electron cooler which is used for cooling of protons at 23.8 GeV. In this case, we assume the electron cooler rst pre-cools protons at an injection energy of 23.8 GeV and then, after acceleration, cools the 41 GeV protons, counteracting IBS and maintaining the beam emittances. In this report, we summarize a feasibility study of an electron cooler that would be needed to cool protons at 23.8 GeV to obtain a small vertical emittance, as well as to counteract beam growth due to IBS for collisions at 41 GeV. The traditional electron cooling system employed at a typical low-energy cooler is based on an electron beam generated with an electrostatic electron gun in DC operating mode, immersed in a longitudinal magnetic field. To cool protons at 23.8 and 41 GeV, electron beam energies of 13.0 and 22.3MeV, respectively, are required. Due to the technical limitations of static high-voltage acceleration, these beam energies require RF acceleration of a pulsed electron beam. Electron cooling using RF-accelerated electron bunches was recently successfully commissioned in RHIC, allowing us to consider such an approach for EIC low-energy electron cooling.
43 PARTICLE ACCELERATORS↗
Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al 2 O 3 with SiN x capping
In this paper, we report on the direct comparison of Al 2 O 3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al 2 O 3 layers with SiN x capping have very similar chemical composition, hydrogen concentration at the Al 2 O 3 /Si interface, and interface defect density (D it ), but the ALD film has slightly higher negative fixed charge (Q f ) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm 2 lower emitter saturation current densities (J 0e ) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiN x /Al 2 O 3 /p + /n/n + passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J 0e has negligible effect on cell efficiency. Furthermore, APCVD Al 2 O 3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al 2 O 3 passivated n-type Si solar cells.
14 SOLAR ENERGY↗
High current density electron emission from an electrodeposited metal nanowire array
High-current electron field emitters are of interest for many applications, but state-of-the-art devices suffer from limitations such as high turn-on macroscopic field, low macroscopic current density, poor emission stability, and short lifetime. Field emitter arrays with a high spatial density of uniform emitters have the potential to address these problems. This work presents the process development, fabrication, and testing of a novel field emitter array. The authors employed electron beam lithography and templated electrodeposition to fabricate a high spatial density array of metallic nanowires, resulting in electron emission with high macroscopic current density (2 A/cm 2 ) and low turn-on macroscopic field (4.35 V/ μ m). Templated electrodeposition of metallic nanowire arrays is a promising method for producing high performance field emitters.
42 ENGINEERING↗
Modeling and design of III-V heterojunction solar cells for enhanced performance
Heterojunctions can increase the efficiency of solar cell devices relative to homojunctions, but there is a large parameter space with significant tradeoffs that must be considered. Here, we present an experimental and computational study of III-V heterojunction solar cells and show how the emitter doping, emitter band gap, and heteroband offsets impact device efficiency. Efficiency is maximized by pushing the junction depletion region into the wider band gap material while minimizing the effects of heteroband offsets through optimized choice of emitter band gap, emitter electron affinity, and/or emitter doping density. We use these results to guide optimization of devices grown by halide vapor phase epitaxy, achieving 27% efficiency in a GaAs/GaInPAs heterojunction device. We also show that heterojunctions yield proportionally larger efficiency improvements in lower-quality materials. Although the modeling was developed and validated using III-V materials, the results are theoretically applicable to materials systems outside III-Vs.
14 SOLAR ENERGY↗
Localization of Nonblinking Point Sources Using Higher-Order-Mode Detection and Optical Heterodyning: Developing a Strategy for Extending the Scope of Molecular, Super-resolution Imaging
While the stochastic, “blinking” nature of fluorescent systems has enabled the super-resolution of their localization by the fitting of their point-spread functions (PSFs), this strategy cannot be exploited for similar resolution of “nonblinking” systems, such as those that might be encountered in a coherent Raman experiment. An alternative method for subdiffraction-limited imaging lies in the exploitation of optical heterodyning. For example, if a Gaussian PSF (a TEM00 mode) of a point emitter is displaced with respect to the origin of the optical system, photons in the higher-order TEM modes carry information about that displacement. Information concerning the displacement can be extracted from photons in these higher-order modes. These photons can be collected by optical heterodyning, which exploits the large gain in a detector’s response to an optical signal from an emitter coupled to a local oscillator, which is prepared in the TEM of interest, e.g., TEM10. We have generalized and developed the heterodyning technique to localize point emitters via the detection of higher-order spatial modes. We have developed a theoretical approach to find a practical estimation limit of the localization parameters using a realistic model that accounts for shot noise, background noise, and Gaussian noise. To demonstrate the applicability of the method, we designed experiments in which a laser is a surrogate for one and two point emitters. Using the Fisher information and its accompanying Cramér-Rao lower bound, we demonstrate super-resolution localization in these cases: we show that objects can be localized to roughly 2–3 orders of magnitude of their point-spread function’s size for a given optical system. Finally and most importantly, it is suggested that the results will ultimately be generalizable to multiple emitters and, most importantly, to “nonblinking” molecular systems, which will be essential for broadening the scope of super-resolution measurements beyond the limits of fluorescence-based techniques.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Single-photon emission from two-dimensional perovskites channeled through low-energy edge states
Two-dimensional perovskites, an emerging family of van der Waals materials with an innate quantum-well structure, exhibit remarkable optical characteristics and compositional tunability. However, their potential as a source for quantum emitters remains unexplored. Here, we investigate low-energy edge states unique to two-dimensional perovskites using comprehensive photoluminescence imaging and spectroscopy, to further leverage them towards uncovering quantum emitters. In contrast to above-bandgap excitation, spatially localized single-photon emitters are realized through sub-bandgap energy excitation at the edges in exfoliated single crystals. Specifically, the sub-bandgap excitation facilitates efficient access to deeply confined states within the bandgap, as charge carriers can channel through low-energy edge states while inhibiting competing processes. Furthermore, we demonstrate single-photon emitters from artificially created edges via strain as well as from two-dimensional perovskites with different quantum-well thicknesses. Our findings provide promising opportunities in the development of two-dimensional quantum emitters, where two-dimensional perovskites may provide added functionalities with versatility in material design, fabrication, and scalability.
Materials for optics↗
Thermophotovoltaic efficiency of 40%
Thermophotovoltaics (TPVs) convert predominantly infrared wavelength light to electricity via the photovoltaic effect, and can enable approaches to energy storage and conversion that use higher temperature heat sources than the turbines that are ubiquitous in electricity production today. Since the first demonstration of 29% efficient TPVs (Fig. 1a) using an integrated back surface reflector and a tungsten emitter at 2,000°C (ref. 10), TPV fabrication and performance have improved. However, despite predictions that TPV efficiencies can exceed 50%, the demonstrated efficiencies are still only as high as 32%, albeit at much lower temperatures below 1,300 C (refs. 13,14,15). Here we report the fabrication and measurement of TPV cells with efficiencies of more than 40% and experimentally demonstrate the efficiency of high-bandgap tandem TPV cells. The TPV cells are two-junction devices comprising III–V materials with bandgaps between 1.0 and 1.4 eV that are optimized for emitter temperatures of 1,900–2,400°C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using highly reflective back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 ± 1)% operating at a power density of 2.39 W cm –2 and an emitter temperature of 2,400°C. A 1.2/1.0 eV device reached a maximum efficiency of (39.3 ± 1)% operating at a power density of 1.8 W cm–2 and an emitter temperature of 2,127°C. These cells can be integrated into a TPV system for thermal energy grid storage to enable dispatchable renewable energy. This creates a pathway for thermal energy grid storage to reach sufficiently high efficiency and sufficiently low cost to enable decarbonization of the electricity grid.
14 SOLAR ENERGY↗
Single photon sources with near unity collection efficiencies by deterministic placement of quantum dots in nanoantennas
Deterministic coupling between photonic nodes in a quantum network is an essential step toward implementing various quantum technologies. The omnidirectionality of free-standing emitters, however, makes this coupling highly inefficient, in particular if the distant nodes are coupled via low numerical aperture (NA) channels such as optical fibers. This limitation requires placing quantum emitters in nanoantennas that can direct the photons into the channels with very high efficiency. Moreover, to be able to scale such technologies to a large number of channels, the placing of the emitters should be deterministic. In this work, we present a method for directly locating single free-standing quantum emitters with high spatial accuracy at the center of highly directional bullseye metal–dielectric nanoantennas. We further employ non-blinking, high quantum yield colloidal quantum dots for on-demand single-photon emission that is uncompromised by instabilities or non-radiative exciton recombination processes. Taken together, this approach results in a record-high collection efficiency of 85% of the single photons into a low NA of 0.5, setting the stage for efficient coupling between on-chip, room temperature nanoantenna-emitter devices and a fiber or a remote free-space node without the need for additional optics.
36 MATERIALS SCIENCE↗
Adiabatic matching of particle bunches in a plasma-based accelerator in the presence of ion motion
Witness beam stability and preservation of its ultra-low emittance have been identified as critical challenges toward realizing a TeV-class, plasma-based linear collider. In fact, the witness bunch parameters required by a future TeV-class collider have been expected to trigger hosing instability and background ion motion, leading to emittance degradation and, potentially, to bunch loss. Recently, it has been shown that ion motion suppresses the hosing instability, and proper longitudinal bunch shaping can eliminate the ion-motion-induced emittance growth. Here, we propose and analyze a plasma-based method to generate the shaped bunches that enable emittance preservation in the presence of ion motion. The method is based on an adiabatic matching procedure, where a bunch with an initially untapered profile is injected in the plasma accelerator stage with an energy low enough that ion motion effects are initially small. As the bunch accelerates, it is adiabatically compressed, ion motion is gradually triggered, and the bunch slowly but continuously readjusts itself in the ion motion-perturbed wakefield acquiring the desired taper. The production of tapered witness bunch profiles that minimize energy spread and preserve emittance for collider-relevant parameters could enable the use of plasma-based accelerators for high-energy physics applications.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗