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At least 325 records · Page 18

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DOE OSTI2020

Development of a Beam Halo Monitor

Muons, Inc. proposed improved Residual-Gas luminescent Beam Profile Monitors for Intense Beams by adding novel features including a mirascope, a light collecting device devised in the 16th century by an inventor of the telescope. A modern mirascope consists of 2 paraboloids. Light generated by the beam is collected by the paraboloids and creates a beam image. By placing a lens near the image it is possible to collect almost 100% of the emitted light, up to ten times better than existing fluorescence profilometers. Intense (multi-MW) proton beams pose a challenge for beam profile measurements. Solid-based beam intercepting instrumentation produces unallowable levels of radiation at these high powers. An alternative is to use a zero-or-low mass device such as a residual-gas profile monitor, either through collection of ionization or fluorescence. Fluorescence has an intrinsic advantage over the usual collection of ionized electrons in that it is not affected by the strong and variable electric and magnetic fields created by the beam that can distort profiles and make calibration difficult. For this reason, we proposed the fluorescence technique using the mirascope and other methods to enhance light collection and versatility by modifying the residual gas and its spatial distribution. In Phase I, we designed a mirascope and its electronics for commissioning and beam tests in a proposed Phase II. The design was based on optical simulations done in Phase I, and a physics run plan was developed for optimizing and testing. The Phase II experimental site and program have been planned and our goal is to produce a universal low cost Mirascope Residual-Gas Luminescent Beam Profile Monitor that can replace all other profile monitors currently used in accelerators.

43 PARTICLE ACCELERATORS↗

NASA NTRS1982

Phase control and beam steering of semiconductor laser arrays

The operational principles and a possible device configuration of one dimensional monolithically integrated semiconductor laser arrays are described. The output beam of the array can be electronically steered. Devices of the type can find applications in optical communication systems where the power levels needed are above the capability of a single laser device.

Katz, J.↗

NASA NTRS1985

Semiconductor Laser Phased Array

Oscillations synchronized and modulated individually for beam steering. Phased array of GaAs infrared lasers put out powerful electronically-steerable coherent beam. Fabricated as integrated circuit on GaAs chip, new device particularly suited to optical communications, optical data processing and optical detection and ranging systems.

Katz, J.↗

NASA NTRS2000

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every Synchrotron White-Beam X-ray Topography (SWBXT)-identified closed core screw dislocation, an Electron Beam Induced Current (EBIC) image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

Schnable, C. M.↗

NASA NTRS1986

Auger electron spectroscopy, secondary ion mass spectroscopy and optical characterization of a-C-H and BN films

The amorphous dielectrics a-C:H and BN were deposited on III-V semiconductors. Optical band gaps as high as 3 eV were measured for a-C:H generated by C4H10 plasmas; a comparison was made with bad gaps obtained from films prepared by CH4 glow discharges. The ion beam deposited BN films exhibited amorphous behavior with band gaps on the order of 5 eV. Film compositions were studied by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The optical properties were characterized by ellipsometry, UV/VIS absorption, and IR reflection and transmission. Etching rates of a-C:H subjected to O2 dicharges were determined.

Pouch, J. J.↗

DOE OSTI2022

Hybridization and deconfinement in colloidal quantum dot molecules

The structural, electronic, and optical properties of CdSe/CdS core–shell colloidal quantum dot molecules, a new class of coupled quantum dot dimers, are explored using atomistic approaches. Unlike the case of dimers grown by molecular beam epitaxy, simulated strain profile maps of free-standing colloidal dimers show negligible additional strain resulting from the attachment. Further, the electronic properties of the relaxed dimers are described within a semiempirical pseudopotential model combined with the Bethe–Salpeter equation within the static screening approximation to account for electron–hole correlations. The interplay of strain, hybridization (tunneling splitting), quantum confinement, and electron–hole binding energies on the optical properties is analyzed and discussed. The effects of the dimensions of the neck connecting the two quantum dot building blocks, as well as the shell thickness, are studied.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2000

Diffractive Optical Elements for Spectral Imaging

Diffractive optical elements fabricated on flat and non-flat substrates frequently act as dispersive elements in imaging spectrometers. We describe the design and electron-beam fabrication of blazed and computer-generated-hologram gratings for slit and tomographic imaging spectrometers.

diffractive optics gratings spectral imaging imagi↗

NASA NTRS2000

Diffractive Optical Elements for Spectral Imaging

diffractive optics gratings spectral imaging imagi↗

DOE OSTI2026

Accuracy and Resolution Evaluation of the E-Beam Profile Scanner at the Fermilab Main Injector

The objective of this work is to assess the accuracy of measurements made by the Electron Beam Profile Scanner (EBPS), which captures the trajectory of an electron beam with and without a proton beam present. The proton beam induces deflection in the electron beam, which is influenced by proton charges. For high-resolution images, the probe beam needs to be of high intensity, small diameter, and small divergence, evaluated using a phosphor screen and an optical transition radiation (OTR) screen. The capabilities of the Kimball Physics electron gun (eGun) will be considered for accuracy. Additionally, the Zemax software will be utilized to characterize the optical elements.

Mwaniki, M. W. [IIT, Chicago] (ORCID:0000000169057↗

DOE OSTI2022

Fast optical transport of ultracold molecules over long distances

Abstract Optically trapped laser-cooled polar molecules hold promise for new science and technology in quantum information and quantum simulation. Large numerical aperture optical access and long trap lifetimes are needed for many studies, but these requirements are challenging to achieve in a magneto-optical trap (MOT) vacuum chamber that is connected to a cryogenic buffer gas beam source, as is the case for all molecule laser cooling experiments so far. Long distance transport of molecules greatly eases fulfilling these requirements as molecules are placed into a region separate from the MOT chamber. We realize a fast transport method for ultracold molecules based on an electronically focus-tunable lens combined with an optical lattice. The high transport speed is achieved by the 1D red-detuned optical lattice, which is generated by interference of a focus-tunable laser beam and a focus-fixed laser beam. Efficiency of 48(8)% is realized in the transport of ultracold calcium monofluoride (CaF) molecules over 46 cm distance in 50 ms, with a moderate heating from 32(2) μ K to 53(4) μ K. Positional stability of the molecular cloud allows for stable loading of an optical tweezer array with single molecules.

74 ATOMIC AND MOLECULAR PHYSICS↗

NASA NTRS1996

A proof of concept investigation: A unique mobility spectrometer for In Situ diagnostics of positive and negative ion distributions in the mesosphere and lower ionosphere

We have carried out a proof-of-concept development and test effort that not only promises the reduction of parasitic effects of surface contamination (therefore increasing the integrity of 'in situ' measurements in the 60-130 km regime), but promises a uniquely expanded measurement set that includes electron densities, plasma conductivities, charged-particle mobilities, and mass discrimination of positive and negative ion distributions throughout the continuum to free-molecular-flow regimes. Three different sensor configurations were designed, built and tested, along with specialized driving voltage, electrometer and channeltron control electronics. The individual systems were tested in a variety of simulated space environments ranging from pressures near the continuum limit of 100 mTorr to the collisionless regime at 10(exp -6) Torr. Swept modes were initially employed to better understand ion optics and ion 'beam' losses to end walls and to control electrodes. This swept mode also helped better understand and mitigate the influences of secondary electrons on the overall performance of the PIMS design concept. Final results demonstrated the utility of the concept in dominant single-ion plasma environments. Accumulated information, including theoretical concepts and laboratory data, suggest that multi-ion diagnostics are fully within the instrument capabilities and that cold plasma tests with minimized pre-aperture sheath acceleration are the key ingredients to multi-ion success.

Szuszczewicz, Edward P.↗

DOE OSTI2023

Using defects as a ‘fossil record’ to help interpret complex processes during additive manufacturing: as applied to raster-scanned electron beam powder bed additively manufactured Ti–6Al–4V

Abstract Defects in parts produced by additive manufacturing, instead of simply being perceived as deleterious, can act as important sources of information associated with the complex physical processes that occur during materials deposition and subsequent thermal cycles. Indeed, they act as materials-state ‘fossil’ records of the dynamic AM process. The approach of using defects as epoch-like records of prior history has been developed while studying additively manufactured Ti–6Al–4V and has given new insights into processes that may otherwise remain either obscured or unquantified. Analogous to ‘epochs,’ the evolution of these defects often is characterized by physics that span across a temporal length scale. To demonstrate this approach, a broad range of analyses including optical and electron microscopy, X-ray computed tomography, energy-dispersive spectroscopy, and electron backscatter diffraction have been used to characterize a raster-scanned electron beam Ti–6Al–4V sample. These analysis techniques provide key characteristics of defects such as their morphology, location within the part, complex compositional fields interacting with the defects, and structures on the free surfaces of defects. Observed defects have been classified as banding, spherical porosity, and lack of fusion. Banding is directly related to preferential evaporation of Al, which has an influence on mechanical properties. Lack-of-fusion defects can be used to understand columnar grain growth, fluid flow of melt pools, humping, and spattering events. Graphical abstract

36 MATERIALS SCIENCE↗

NASA NTRS1994

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

Sewell, James S.↗

NASA NTRS2007

Optical Phased Array Antennas using Coupled Vertical Cavity Surface Emitting Lasers

High data rate communication links are needed to meet the needs of NASA as well as other organizations to develop space-based optical communication systems. These systems must be robust to high radiation environments, reliable, and operate over a wide temperature range. Highly desirable features include beam steering capability, reconfigurability, low power consumption, and small aperture size. Optical communication links, using coupled vertical cavity surface emitting laser radiating elements are promising candidates for the transmit portion of these communication links. In this talk we describe a mission scenario, and how the antenna requirements are derived from the mission needs. We describe a potential architecture for this type of antenna, and outline the advantages and drawbacks of this approach relative to competing technologies. The technology we are proposing used coupled arrays of 1550 nm vertical cavity surface emitting lasers for transmission. The feasibility of coupling these arrays together, to form coherent high-power beams that can be modulated at data rates exceeding 1 Gbps, will be explored. We will propose an architecture that enables electronic beam steering, thus mitigating the need for ancillary acquisition, tracking and beam pointing equipment such as needed for current optical communicatin systems. The beam-steering capability we are proposing also opens the possibility of using this technology for inter-satellite communicatin links, and satellite-to-surface links.

Mueller, Carl H.↗

NASA NTRS1977

Optical properties of ion beam textured metals

Copper, silicon, aluminum, titanium and 316 stainless steel were textured by 1000 eV xenon ions from an 8 cm diameter electron bombardment ion source. Simultaneously sputter-deposited tantalum was used to facilitate the development of the surface microstructure. Scanning electron microscopy of the ion textured surfaces revealed two types of microstructure. Copper, silicon, and aluminum developed a cone structure with an average peak-to-peak distance ranging from 1 micron for silicon to 6 microns for aluminum. Titanium and 316 stainless steel developed a serpentine ridge structure. The average peak-to-peak distance for both of these materials was 0.5 micron. Spectral reflectance was measured using an integrating sphere and a holraum reflectometer. Total reflectance for air mass 0 and 2, solar absorptance and total emittance normalized for a 425 K black body were calculated from the reflectance measurements.

Hudson, W. R.↗

NASA NTRS1977

Optical properties of ion beam textured metals

Copper, silicon, aluminum, titanium and 316 stainless steel were textured by 1000 eV xenon ions from an 8-cm diameter electron bombardment ion source. Copper, silicon, and aluminum developed a cone structure with an average peak-to-peak distance ranging from 1 micron for silicon to 6 microns for aluminum. Titanium and 316 stainless steel developed a serpentine ridge structure. The average peak-to-peak distance for both of these materials was 0.5 micron. Total reflectance for air mass 0 and 2, solar absorptance, and total emittance, normalized for a 425 K black body were calculated from the reflectance measurements. All materials had solar absorptances between 0.93 (stainless steel) and 0.97 (silicon and aluminum). Total emittance values of 0.75, 0.80, and 0.85 for Si, Al, and Cu, respectively, resulted in a solar absorptance/total emittance ratio of approximately 1.2. Titanium and 316 stainless steel had values of 2.6 and 2.9, respectively, for this ratio.

Hudson, W. R.↗

NASA NTRS1983

Surface modification using MeV ion beams

Electronic excitation induced by MeV/amu ion beams in a variety of materials has been employed successfully for a number of applications. The examples that will be presented are: modification of the surface reflectivities of optical materials; sputter-erosion of dielectrics; and enhancement of the adhesion of thin film coatings. All of these effects arise from the loss of energy by the ion beam to electrons in the target material; the mechanisms involved are at best qualitatively understood. This paper will stress not only the exploitation of such high energy bombardment techniques but will also briefly review attempts to expose the underlying causes.

Tombrello, T. A.↗

NASA NTRS1975

The 1.06 micrometer wideband laser modulator: Fabrication and life testing

The design, fabrication, testing and delivery of an optical modulator which will operate with a mode-locked Nd:YAG laser at 1.06 micrometers were performed. The system transfers data at a nominal rate of 400 Mbps. This wideband laser modulator can transmit either Pulse Gated Binary Modulation (PGBM) or Pulse Polarization Binary Modulation (PPBM) formats. The laser beam enters the modulator and passes through both crystals; approximately 1% of the transmitted beam is split from the main beam and analyzed for the AEC signal; the remaining part of the beam exits the modulator. The delivered modulator when initially aligned and integrated with laser and electronics performed very well. The optical transmission was 69.5%. The static extinction ratio was 69:1. A 1000 hour life test was conducted with the delivered modulator. A 63 bit pseudorandom code signal was used as a driver input. At the conclusion of the life test the modulator optical transmission was 71.5% and the static extinction ratio 65:1.

Teague, J. R.↗