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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

The emergence of macroscopic currents in photoconductive sampling of optical fields

Photoconductive field sampling enables petahertz-domain optoelectronic applications that advance our understanding of light-matter interaction. Despite the growing importance of ultrafast photoconductive measurements, a rigorous model for connecting the microscopic electron dynamics to the macroscopic external signal is lacking. This has caused conflicting interpretations about the origin of macroscopic currents. Here, we present systematic experimental studies on the signal formation in gas-phase photoconductive sampling. Our theoretical model, based on the Ramo–Shockley-theorem, overcomes the previously introduced artificial separation into dipole and current contributions. Extensive numerical particle-in-cell-type simulations permit a quantitative comparison with experimental results and help to identify the roles of electron-neutral scattering and mean-field charge interactions. The results show that the heuristic models utilized so far are valid only in a limited range and are affected by macroscopic effects. Our approach can aid in the design of more sensitive and more efficient photoconductive devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Scalable Al 2 O 3 –TiO 2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Abstract Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al 2 O 3 –TiO 2 ‐based valence‐change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al 2 O 3 –TiO 2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence‐change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)‐technology‐compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Parameter extraction for a SPICE model of an hTron superconducting thermal switch

Efficiently simulating large circuits is crucial to the development of superconducting nanowire-based electronics. However, current simulation tools for this technology are not adapted to the scaling of circuit size and complexity. We focus on the multilayered heater-nanocryotron (hTron), a promising superconducting nanowire-based switch used in applications such as superconducting nanowire single-photon detector readout. Previously, the hTron was modeled using traditional finite-element methods, which fall short in simulating systems at a larger scale. An empirical-based method would be better adapted to this task, enhancing both simulation speed and agreement with experimental data. In this work, we perform switching current and activation delay measurements on 17 hTron devices. We then develop a method for extracting physical fitting parameters used to characterize the devices. We build a SPICE behavioral model that reproduces the static and transient device behavior using these parameters, and validate it by comparing its performance to a model developed in prior work, showing an improvement in simulation time by several orders of magnitude. Furthermore, our model provides circuit designers with a tool to help understand the hTron’s behavior during all design stages, thus enabling broader use of the hTron across various new areas of application.

Caloritronics↗
DOE OSTI2024

Modeling Communication Infrastructures of Cyber Physical Systems

This effort explores modeling cyber infrastructure, including communication devices like switches, routers, sensors, and controllers, and physical media attributes like propagation of radio signals, in coordination with power distribution system model layouts. To do this, the project studies real-world configurations to define axioms of how different communication media is deployed with control equipment. These axioms will be used to develop tools to generate realistic cyber infrastructure models from starting power system models. This effort leverages and builds on the co-simulation platform developed by the other RD2C projects. The axioms and tools will be validated and demonstrated with the NS3 simulation tool as part of a co-simulation to show the behavior/impacts of cyber infrastructure on control operations.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2013

Spacecraft 3D Augmented Reality Mobile App

The Spacecraft 3D application allows users to learn about and interact with iconic NASA missions in a new and immersive way using common mobile devices. Using Augmented Reality (AR) techniques to project 3D renditions of the mission spacecraft into real-world surroundings, users can interact with and learn about Curiosity, GRAIL, Cassini, and Voyager. Additional updates on future missions, animations, and information will be ongoing. Using a printed AR Target and camera on a mobile device, users can get up close with these robotic explorers, see how some move, and learn about these engineering feats, which are used to expand knowledge and understanding about space. The software receives input from the mobile device's camera to recognize the presence of an AR marker in the camera's field of view. It then displays a 3D rendition of the selected spacecraft in the user's physical surroundings, on the mobile device's screen, while it tracks the device's movement in relation to the physical position of the spacecraft's 3D image on the AR marker.

Hussey, Kevin J.↗
DOE OSTI2025

Unified differentiable digital twin for the IOTA/FAST facility

As the design complexity of modern accelerators grows, there is more interest in using advanced simulations that have fast execution time or produce insights about accelerator state. One notable example of additional information are gradients of physical observables with respect to design parameters produced by differentiable simulations. The IOTA/FAST facility has recently begun a program to implement and experimentally validate a unified start-to-end differentiable digital twin to serve as a virtual accelerator test stand, allowing for rapid prototyping of new software and experiments with minimal beam time costs. In this contribution we will discuss our plans and progress. Specifically, we will cover the selection and benchmarking of both physics and ML codes, the development of generic interfaces between device models and surrogate or physics-based sections, and the export of the parameters through either a deterministic event loop or a fully asynchronous EPICS soft input/output controller. We will also discuss challenges in model calibration and uncertainty quantification, as well as future plans to support larger proton accelerators like PIPII and Booster.

Kuklev, Nikita [Fermilab]↗
DOE OSTI2024

Gamma, electron beam and X-ray irradiation effects on polymers in an advanced bone cement mixer device

The medical device industry has been investigating ways to increase the use of alternatives to cobalt-60 gamma radiation and ethylene-oxide gas sterilization, such as electron beam (E-beam) and X-ray radiation, due to regulatory and market pressures. One impediment to switching to E-beam or X-ray technology for sterilization is the lack of data on the effects of these radiation sources on medical device polymers. To provide such data this work considers irradiation and testing of a common single-use medical bone cement mixing system, the Stryker Advanced Cement Mixer (ACM®), that is composed of seven polymer materials. The ACM® devices considered here were processed to sterilization-relevant doses (15, 25, 50, and 70 kGy) using three radiation technologies: gamma, E-beam, and X-ray. The system and its polymer components were tested for product functionality, as well as mechanical and visual properties to determine how exposure effects may be influenced by radiation technology and dose level. We found that although there were instances of statistically significant differences in effects between the gamma-irradiated products and those irradiated with E-beam and X-ray, those effects were negligible in terms of retained functionality of the product and retained mechanical properties of the polymer components. Overall, results of this study demonstrate that, for of the effects studied, E-beam and X-ray are viable alternatives to cobalt-60 gamma radiation for sterilization of the polymer-based device investigated.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

AI-enhanced Codesign for Next-Generation Neuromorphic Circuits and Systems

This report details work that was completed to address the Fiscal Year 2022 Advanced Science and Technology (AS&T) Laboratory Directed Research and Development (LDRD) call for “AI-enhanced Co-Design of Next Generation Microelectronics.” This project required concurrent contributions from the fields of 1) materials science, 2) devices and circuits, 3) physics of computing, and 4) algorithms and system architectures. During this project, we developed AI-enhanced circuit design methods that relied on reinforcement learning and evolutionary algorithms. The AI-enhanced design methods were tested on neuromorphic circuit design problems that have real-world applications related to Sandia’s mission needs. The developed methods enable the design of circuits, including circuits that are built from emerging devices, and they were also extended to enable novel device discovery. We expect that these AI-enhanced design methods will accelerate progress towards developing next-generation, high-performance neuromorphic computing systems.

42 ENGINEERING↗
DOE OSTI2024

Synthesis of 2D layered transition metal (Ni, Co) hydroxides via edge-on condensation

Abstract Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two-dimensional (2D) LTMHs remain largely understudied in terms of physical properties and applications in electronic devices. Here, for the first time we report > 20 μm α-Ni(OH) 2 2D crystals, synthesized from hydrothermal reaction. And an edge-on condensation mechanism assisted with the crystal field geometry is proposed to understand the 2D intra-planar growth of the crystals, which is also testified through series of systematic comparative studies. We also report the successful synthesis of 2D Co(OH) 2 crystals (> 40 μm) with more irregular shape due to the slightly distorted octahedral geometry of the crystal field. Moreover, the detailed structural characterization of synthesized α-Ni(OH) 2 are performed. The optical band gap energy is extrapolated as 2.54 eV from optical absorption measurements and the electronic bandgap is measured as 2.52 eV from reflected electrons energy loss spectroscopy (REELS). We further demonstrate its potential as a wide bandgap (WBG) semiconductor for high voltage operation in 2D electronics with a high breakdown strength, 4.77 MV/cm with 4.9 nm thickness. The successful realization of the 2D LTMHs opens the door for future exploration of more fundamental physical properties and device applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2011

Network-Capable Application Process and Wireless Intelligent Sensors for ISHM

Intelligent sensor technology and systems are increasingly becoming attractive means to serve as frameworks for intelligent rocket test facilities with embedded intelligent sensor elements, distributed data acquisition elements, and onboard data acquisition elements. Networked intelligent processors enable users and systems integrators to automatically configure their measurement automation systems for analog sensors. NASA and leading sensor vendors are working together to apply the IEEE 1451 standard for adding plug-and-play capabilities for wireless analog transducers through the use of a Transducer Electronic Data Sheet (TEDS) in order to simplify sensor setup, use, and maintenance, to automatically obtain calibration data, and to eliminate manual data entry and error. A TEDS contains the critical information needed by an instrument or measurement system to identify, characterize, interface, and properly use the signal from an analog sensor. A TEDS is deployed for a sensor in one of two ways. First, the TEDS can reside in embedded, nonvolatile memory (typically flash memory) within the intelligent processor. Second, a virtual TEDS can exist as a separate file, downloadable from the Internet. This concept of virtual TEDS extends the benefits of the standardized TEDS to legacy sensors and applications where the embedded memory is not available. An HTML-based user interface provides a visual tool to interface with those distributed sensors that a TEDS is associated with, to automate the sensor management process. Implementing and deploying the IEEE 1451.1-based Network-Capable Application Process (NCAP) can achieve support for intelligent process in Integrated Systems Health Management (ISHM) for the purpose of monitoring, detection of anomalies, diagnosis of causes of anomalies, prediction of future anomalies, mitigation to maintain operability, and integrated awareness of system health by the operator. It can also support local data collection and storage. This invention enables wide-area sensing and employs numerous globally distributed sensing devices that observe the physical world through the existing sensor network. This innovation enables distributed storage, distributed processing, distributed intelligence, and the availability of DiaK (Data, Information, and Knowledge) to any element as needed. It also enables the simultaneous execution of multiple processes, and represents models that contribute to the determination of the condition and health of each element in the system. The NCAP (intelligent process) can configure data-collection and filtering processes in reaction to sensed data, allowing it to decide when and how to adapt collection and processing with regard to sophisticated analysis of data derived from multiple sensors. The user will be able to view the sensing device network as a single unit that supports a high-level query language. Each query would be able to operate over data collected from across the global sensor network just as a search query encompasses millions of Web pages. The sensor web can preserve ubiquitous information access between the querier and the queried data. Pervasive monitoring of the physical world raises significant data and privacy concerns. This innovation enables different authorities to control portions of the sensing infrastructure, and sensor service authors may wish to compose services across authority boundaries.

Figueroa, Fernando↗
DOE OSTI2020

Effect of frequency and applied voltage of an atmospheric-pressure dielectric-barrier discharge on breakdown and hydroxyl-radical generation with a liquid electrode

This work examines the effect of the frequency and peak applied voltage on hydroxyl-radical generation in a dielectric-barrier plasma discharge between a metallic needle electrode and one electrode covered with dielectric. The authors examine a system that can expose up to 96 liquid samples in an automated fashion without human intervention beyond setting the initial software configuration. Then, hydroxylradical concentration, measured through coumarin fluorescence, was measured for 5 s plasma exposures generated under different highvoltage conditions with frequencies from 2 to 16 kHz and amplitudes from 4 to 9 kV. Their results show that an increase in frequency and/or applied voltage, within the range prescribed above and the limits of the high-voltage power supply, can yield up to a 150% increase in fluorescence with an equivalent hydroxyl-radical increase. Applications using typical previous methods, such as the Fenton Reaction, are limited in that they continuously generate hydroxyl radicals over millisecond and longer intervals. These results establish the electrical parameters that can now be applied to polymers, like proteins, which show three dimensional structures that are flexible and fluctuate on a microsecond and nanosecond time scale, with hydroxyl-radical generation on this time scale using this device. Additionally, plasma exposures may be optimized for a great variety of proteins, devices and techniques, where hydroxyl-radical generation is of utmost importance, reducing exposure time and potential subjection of samples to harmful side effects.

42 ENGINEERING↗
NASA NTRS2019

Characterization and Failure Analysis of 650 V Enhancement-Mode GaN HEMT for Cryogenically-Cooled Power Electronics

In order to evaluate the feasibility of newly developed GaN devices in a cryogenically-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride high-electron-mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultra-fast switching speed induced high di/dt and dv/dt at cryogenic temperatures amplifies the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultra-fast switching speed are given in this paper.

Static and dynamic characterization↗
DOE OSTI2020

New application of hyperspectral imaging to steady-state plasma observations

A new application of hyperspectral imaging (HSI) to steady-state plasma emission observations is proposed because of its prominent feature: an HSI camera records a two-dimensional image, and each spatial pixel contains spectral data typically with more than a hundred bands, while conventional digital cameras have only three bands. The characterization of an HSI camera (Specim IQ) has been performed during steady-state plasma–material interaction experiments using the linear plasma device PISCES-A. By easily subtracting the background/continuum emission in contrast to conventional filter cameras, two-dimensional images of multiple emission lines at different wavelengths are simultaneously obtained during a single measurement, demonstrating the advantage in plasma emission observations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Simulation of open quantum systems via low-depth convex unitary evolutions

Simulating physical systems on quantum devices is one of the most promising applications of quantum technology. Current quantum approaches to simulating open quantum systems are still practically challenging on NISQ-era devices, because they typically require ancilla qubits and extensive controlled sequences. In this work, we propose a hybrid quantum-classical approach for simulating a class of open system dynamics called random-unitary channels. These channels naturally decompose into a series of convex unitary evolutions, which can then be efficiently sampled and run as independent circuits. The method does not require deep ancilla frameworks and thus can be implemented with lower noise costs. We implement simulations of open quantum systems up to dozens of qubits and with large channel ranks. Published by the American Physical Society 2024

Peetz, Joseph (ORCID:0000000274458028)↗
DOE OSTI2023

Bandwidth Control and Symmetry Breaking in a Mott‐Hubbard Correlated Metal

Abstract In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. This study presents control of the correlation strength by tuning the degree of orbital overlap using picometer‐scale lattice engineering. This study illustrates how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated SrVO 3 model system. This study shows how tensile and compressive biaxial strain oppositely affect the SrVO 3 in‐plane and out‐of‐plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. The spectral weight redistribution under strain is derived and explained, which illustrates how high tensile strain drives the system toward a Mott insulating state. Implementation of such concepts can push correlated electron phenomena closer toward new solid‐state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer toward practical realization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1998

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Neudeck, Philip G.↗
DOE OSTI2026

Evaluation of accuracy and resolution of the electron beam profile scanner at the Fermilab Main Injector

The objective of this work is to assess the accuracy of measurements made by the Electron Beam Profile Scanner (EBPS), which captures the trajectory of an electron beam with and without a proton beam present. The proton beam induces deflection in the electron beam, which is influenced by proton charges.For high-resolution images, the probe beam needs to be of high intensity, small diameter, and small divergence, evaluated using a YAG screen and an optical transition radiation (OTR) screen. Additionally, the point spread function (PSF) will be calculated to characterize the optical system's properties using ZEMAX software. The capabilities of the Hamamatsu Charge-Injection Device (CID) camera and Kimball Physics electron gun (e-gun) will be considered for accuracy.

Mwaniki, Matilda [IIT, Chicago; Fermilab]↗
DOE OSTI2022

Identification of Intraday False Data Injection Attack on DER Dispatch Signals

The urgent need for the decarbonization of power grids has accelerated the integration of renewable energy. Concurrently, increasing distributed energy resources (DER) and advanced metering infrastructure (AMI) have transformed the power grids into a more sophisticated cyber-physical system with numerous communication devices. While these transitions provide economic and environmental value, they also impose increased risk of cyber attacks and operation al challenges. This paper investigates the vulnerabilit y of the power grids with high renewable penetration against an intraday false data injection (FDI) attack on DER dispatch signals and proposes a kernel support vector regression (SVR) based detection model as a countermeasure. The intraday FDI attack scenario and the detection model are demonstrated in a numerical experiment using the HCE 187-bus test system.

Kim, Jip↗