Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “device characterization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 325 records · Page 18

Lattice thermal transport in two-dimensional alloys and fractal heterostructures

Abstract Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice thermal conductivity in these ultra-thin systems is challenging and the impact of dopant atoms and hetero-phase interfaces, introduced unintentionally during synthesis or as part of deliberate material design, on thermal transport properties is not understood. Here, we use non-equilibrium molecular dynamics simulations to calculate lattice thermal conductivity of $${\mathrm {(Mo|W)Se_2}}$$ ( Mo | W ) Se 2 monolayer crystals including $${\mathrm {Mo}}_{1-x}{\mathrm {W}}_x{\mathrm {Se_2}}$$ Mo 1 - x W x Se 2 alloys with substitutional point defects, periodic $${\mathrm {MoSe_2}|\mathrm {WSe_2}}$$ MoSe 2 | WSe 2 heterostructures with characteristic length scales and scale-free fractal $${\mathrm {MoSe_2}}|{\mathrm {WSe_2}}$$ MoSe 2 | WSe 2 heterostructures. Each of these features has a distinct effect on phonon propagation in the crystal, which can be used to design fractal and periodic alloy structures with highly tunable thermal conductivities. This control over lattice thermal conductivity will enable applications ranging from thermal barriers to thermoelectrics.

42 ENGINEERING↗

Analytic model of electron transport through and over non-linear barriers

Tunneling barriers are an essential component of electron sources, sensors, detectors, and vacuum nanoelectronics, and a pivotal factor in their performance, but the barriers themselves routinely depart from the analytic models used to model their behavior. Here, a new formalism is developed to analytically and accurately model emission through and over barriers associated with depletion layers, nanotip barriers, and MIM structures. The transmission probability for depletion layer and metal-insulator-metal (MIM) and metaloxide-semiconductor (MOS) barriers is accurately modeled as the electron energy exceeds the barrier height using approaches designed for rapid implementation demanded by simulation codes, and extensible to general barriers. The models supersede conventional thermal and field models in depletion and MIM/MOS barrier studies. Thermal-field methods are used to treat the transmission probability, and shape factor methods to treat the tunneling factor. Analytic formulae for current density are obtained. The methods ease device simulation and characterization of current-voltage relations for emerging technologically interesting barriers with better accuracy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 μs, which shows promise for detector applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗

Experimental study of different silicon sensor options for the upgrade of the CMS Outer Tracker

During the high-luminosity phase of the LHC (HL-LHC), planned to start in 2027, the accelerator is expected to deliver an instantaneous peak luminosity of up to 7.5×10 34 cm –2 s –1 . A total integrated luminosity of 3000 or even 4000 fb –1 is foreseen to be delivered to the general purpose detectors ATLAS and CMS over a decade, thereby increasing the discovery potential of the LHC experiments significantly. The CMS detector will undergo a major upgrade for the HL-LHC,with entirely new tracking detectors consisting of an Outer Tracker and Inner Tracker. However, the new tracking system will be exposed to a significantly higher radiation than the current tracker, requiring new radiation-hard sensors. CMS initiated an extensive irradiation and measurement campaign starting in 2009 to systematically compare the properties of different silicon materials and design choices for the Outer Tracker sensors. Several test structures and sensors were designed and implemented on 18 different combinations of wafer materials, thicknesses, and production technologies. The devices were electrically characterized before and after irradiation with neutrons,and with protons of different energies, with fluences corresponding to those expected at different radii of the CMS Outer Tracker after 3000 fb –1 . The tests performed include studies with β sources, lasers, and beam scans. This paper compares the performance of different options for the HL-LHC silicon sensors with a focus on silicon bulk material and thickness.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Impact of inoculation practices on microbiota assembly and community stability in a fabricated ecosystem

Studying plant-microbe-soil interactions is challenging due to their high complexity and variability in natural ecosystems. While fabricated ecosystems provide opportunities to recapitulate aspects of these systems in reduced complexity and controlled environments, inoculation can be a significant source of variation. To tackle this, we evaluated how different bacteria inoculation practices and plant harvesting time points affect the reproducibility of a microbial synthetic community (SynCom) in association with the model grass Brachypodium distachyon. We tested three microbial inoculation practices: seed inoculation, transplant inoculation, and seedling inoculation; and two harvesting points: early (14-day-old plants) and late (21 days post-inoculation). We grew our plants and bacterial strains in sterile devices (EcoFABs) and characterized the microbial community from root, rhizosphere, and sand using 16S ribosomal RNA gene sequencing. The results showed that inoculation practices significantly affected the rhizosphere microbial community only when harvesting at an early time point but not at the late stage. As the SynCom showed a persistent association with B. distachyon at 21 days post-inoculation regardless of inoculation practices, we assessed the reproducibility of each inoculation method and found that transplant inoculation showed the highest reproducibility. Moreover, plant biomass was not adversely affected by transplant inoculation treatment. We concluded that bacteria inoculation while transplanting coupled with a later harvesting time point gives the most reproducible microbial community in the EcoFAB-B. distachyon-SynCom fabricated ecosystem and recommend this method as a standardized protocol for use with fabricated ecosystem experimental systems.

59 BASIC BIOLOGICAL SCIENCES↗

Electrochemical Residence Time Distribution as a Diagnostic Tool for Redox Flow Batteries

The fluid dynamic and electrochemical performance of redox flow batteries (RFBs) stems from the relationship between the flow field and the porous electrode, whose interplay determines how active species move and react during device operation. While characterization techniques, such as residence time distribution, offer insights into species mobility within a reactive volume for a traditional chemical reactor, electrochemical reactors also enable simultaneous measurement of the redox reactions, unlocking another dimension of analysis. Herein, we demonstrate how potentiodynamic measurements, using injections of electrolyte examined through moment analysis, can provide electrode-specific performance scaling relationships across a matrix of carbon paper and cloth electrodes with flow through and interdigitated flow fields. We further combine experimental campaigns with multiphysics simulations to demonstrate how electrode surface area can be estimated with this technique, which we then validate with activated and unactivated commercial carbon cloth electrodes. These studies reveal the multiscale observations that potentiodynamic measurements afford, augmenting existing electrochemical techniques for holistic electrochemical reactor diagnostics.

Electrochemistry↗

Material aspects of giga-Hertz ZnO TFTs for wireless systems

Abstract Having enabled high-value application capabilities through mass production of flat-panel displays, X-ray imagers, and solar panels, Large-Area Electronics (LAE) holds potential to open new frontiers in wireless applications for the Internet of Things and 5G/6G, by enabling unprecedented spatial control and power efficiency through large size and flexible form factor of radiative apertures. However, this requires boosting operation frequencies from the traditional limits in the range of 10–100’s of mega-Hertz to multi giga-Hertz. In this paper, we discuss critical device metrics, to characterize zinc-oxide (ZnO) thin-film transistor (TFT) operation frequency for both active (for signal amplification) and passive components in LAE-based circuits and systems. We then describe the key structural and material approaches towards recently demonstrated LAE-based giga-Hertz wireless systems employing ZnO TFTs. Bringing LAE to the giga-Hertz regime provides a path towards flexible and meter-scale monolithic integrated wireless systems. Graphical abstract

Ma, Yue (ORCID:0000000186724090)↗

Operational, gauge-free quantum tomography

As increasingly impressive quantum information processors are realized in laboratories around the world, robust and reliable characterization of these devices is now more urgent than ever. These diagnostics can take many forms, but one of the most popular categories is tomography, where an underlying parameterized model is proposed for a device and inferred by experiments. Here, we introduce and implement efficient operational tomography, which uses experimental observables as these model parameters. This addresses a problem of ambiguity in representation that arises in current tomographic approaches (the gauge problem). Solving the gauge problem enables us to efficiently implement operational tomography in a Bayesian framework computationally, and hence gives us a natural way to include prior information and discuss uncertainty in fit parameters. We demonstrate this new tomography in a variety of different experimentally-relevant scenarios, including standard process tomography, Ramsey interferometry, randomized benchmarking, and gate set tomography.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structure-Related Electronic and Magnetic Properties in Ultrathin Epitaxial Ni x Fe 3–x O 4 Films on MgO(001)

Off-stoichiometric Ni x Fe 3–x O 4 ultrathin films (x < 2.1) with varying Ni content x and thickness 16 (±2) nm were grown on MgO(001) by reactive molecular beam epitaxy. Synchrotron-based high-resolution X-ray diffraction measurements reveal vertical compressive strain for all films, resulting from a lateral pseudomorphic adaption of the film to the substrate lattice without any strain relaxation. Complete crystallinity with smooth interfaces and surfaces is obtained independent of the Ni content x. For x < 1 an expected successive conversion from Fe 3 O 4 to NiFe 2 O 4 is observed, whereas local transformation into NiO structures is observed for films with Ni content x > 1. However, angle-resolved hard X-ray photoelectron spectroscopy measurements indicate homogeneous cationic distributions without strictly separated phases independent of the Ni content, while X-ray absorption spectroscopy shows that also for x > 1, not all Fe 2+ cations are substituted by Ni 2+ cations. The ferrimagnetic behavior, as observed by superconducting quantum interference device magnetometry, is characterized by decreasing saturation magnetization due to the formation of antiferromagnetic NiO parts.

36 MATERIALS SCIENCE↗

Development of beam lead RF integrated circuits

This paper describes the design and development of a set of multifunction VHF/UHF integrated circuits aimed at providing a major improvement in spacecraft radio reliability through low stress operation and the processing of these circuits in beam-lead form. The methods evolved for the high frequency characterization of the devices are discussed together with the design of suitable test fixtures. Typical test results and the distribution of test parameters are presented. A unique carrier for beam-lead devices is described, and the need for such a device is discussed. The application of the carrier to device screening, burn-in and drift measurements is discussed together with the incentives for providing these capabilities. An overview of the integration of the devices into the spacecraft radio is given and candidate assembly processes are discussed. The technology impact of this approach upon future spacecraft radio systems is qualitatively examined.

Kline, A. J.↗

Wideband optical storage

This paper has five purposes. First, to focus upon the key relationships that bound the technology choices for large, archival, digital storage devices; second, to identify the motivations for selecting the optical technology for a petabit-exabit level storage system (10 to the 15th to 10 to the 18th bits); third, to present a generic example and a specific implementation of a terabit-level optical storage device; fourth, to characterize the global design space constraints that will allow one to build a technology-limited optical store; and fifth, to sketch the outline of the BYTERON concept, a wideband 10 to the 16th to 10 to the 17th bit optical store concept and contrast its performance to that of an optical store that is in operation today

Heard, H. G.↗

Measurement of surface microtopography using helicopter-mounted stereo film cameras and two stereo matching techniques

A common problem in acquiring ground-truth data for use in microwave interaction modeling is the capture of surface roughness data that are both sampled at distances comparable to a fraction of the wavelength and extensive enough to represent the surface statistics in at least one resolution cell of the microwave remote sensor used. A technique has been developed for acquiring the necessary photogrammetric data using twin 70-mm film cameras mounted on a helicopter boom. The apparatus is described, and the accuracy with which ground surface roughness can be characterized using this device is estimated. Both standard and cross-correlation methods were used for data reduction. Stereogrammetry is compared with a completely automated image-matching technique. Dense disparity images were generated from the helicopter stereo pairs. Using interior orientation parameters supplied by the camera manufacturers, and assuming that exterior orientation parameters remain constant between control target and test field photography, an extremely dense DEM (digital elevation model) for a test field has been derived. Results are compared, and accuracy estimates are presented.

Wall, S. D.↗

Analysis of measurements for solid state laser remote lidar system

The merits of using lidar systems for remote measurements of various atmospheric processes such as wind, turbulence, moisture, and aerosol concentration are widely recognized. Although the lidar technology has progressed considerably over the past two decades, significant research particularly in the area of solid state lidars remains to be conducted in order to fully exploit this technology. The work performed by the UAH (University of Alabama in Huntsville) personnel under this Delivery Order concentrated on analyses of measurements required in support of solid state laser remote sensing lidar systems which are to be designed, deployed, and used to measure atmospheric processes and constituents. UAH personnel has studied and recommended to NASA/MSFC the requirements of the optical systems needed to characterize the detection devices suitable for solid state wavelengths and to evaluate various heterodyne detection schemes. The 2-micron solid state laser technology was investigated and several preliminary laser designs were developed and their performance for remote sensing of atmospheric winds and clouds from a spaceborne platform were specified. In addition to the laser source and the detector, the other critical technologies necessary for global wind measurements by a spaceborne solid state coherent lidar systems were identified to be developed and demonstrated. As part of this work, an analysis was performed to determine the atmospheric wind velocity estimation accuracy using the line-of-sight measurements of a scanning coherent lidar. Under this delivery order, a computer database of materials related to the theory, development, testing, and operation of lidar systems was developed to serve as a source of information for lidar research and development.

Amzajerdian, Farzin↗

Distributed and collaborative synthetic environments

Fast graphics workstations and increased computing power, together with improved interface technologies, have created new and diverse possibilities for developing and interacting with synthetic environments. A synthetic environment system is generally characterized by input/output devices that constitute the interface between the human senses and the synthetic environment generated by the computer; and a computation system running a real-time simulation of the environment. A basic need of a synthetic environment system is that of giving the user a plausible reproduction of the visual aspect of the objects with which he is interacting. The goal of our Shastra research project is to provide a substrate of geometric data structures and algorithms which allow the distributed construction and modification of the environment, efficient querying of objects attributes, collaborative interaction with the environment, fast computation of collision detection and visibility information for efficient dynamic simulation and real-time scene display. In particular, we address the following issues: (1) A geometric framework for modeling and visualizing synthetic environments and interacting with them. We highlight the functions required for the geometric engine of a synthetic environment system. (2) A distribution and collaboration substrate that supports construction, modification, and interaction with synthetic environments on networked desktop machines.

Bajaj, Chandrajit L.↗

An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging

PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD < 10(exp -8) A/sq cm), and high shunt resistance-area products (RoA > 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.

Cohen, Marshall J.↗

Measurement of Thin Film Integrated Passive Devices on SiC through 500 C

Wireless communication in jet engines and high temperature industrial applications requires FD integrated circuits (RFICs) on wide bandgap semiconductors such as Silicon Carbide (SiC). In this paper, thin-film NiCr resistors, MIM capacitors, and spiral inductors are fabricated on a high purity semi-insulating 4H-SiC substrate. The devices are experimentally characterized through 50 GHz at temperatures of up to 500 C and the equivalent circuits are deembedded from the measured data. It is shown that the NiCr resistors are stable within 10% to 300 C while the capacitors have a value stable within 10% through 500 C.

Schwartz, Zachary D.↗

Numerical Modeling and Testing of an Inductively-Driven and High-Energy Pulsed Plasma Thrusters

Pulsed Plasma Thrusters (PPTs) are advanced electric space propulsion devices that are characterized by simplicity and robustness. They suffer, however, from low thrust efficiencies. This summer, two approaches to improve the thrust efficiency of PPTs will be investigated through both numerical modeling and experimental testing. The first approach, an inductively-driven PPT, uses a double-ignition circuit to fire two PPTs in succession. This effectively changes the PPTs configuration from an LRC circuit to an LR circuit. The LR circuit is expected to provide better impedance matching and improving the efficiency of the energy transfer to the plasma. An added benefit of the LR circuit is an exponential decay of the current, whereas a traditional PPT s under damped LRC circuit experiences the characteristic "ringing" of its current. The exponential decay may provide improved lifetime and sustained electromagnetic acceleration. The second approach, a high-energy PPT, is a traditional PPT with a variable size capacitor bank. This PPT will be simulated and tested at energy levels between 100 and 450 joules in order to investigate the relationship between efficiency and energy level. Arbitrary Coordinate Hydromagnetic (MACH2) code is used. The MACH2 code, designed by the Center for Plasma Theory and Computation at the Air Force Research Laboratory, has been used to gain insight into a variety of plasma problems, including electric plasma thrusters. The goals for this summer include numerical predictions of performance for both the inductively-driven PPT and high-energy PFT, experimental validation of the numerical models, and numerical optimization of the designs. These goals will be met through numerical and experimental investigation of the PPTs current waveforms, mass loss (or ablation), and impulse bit characteristics.

Parma, Brian↗