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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Catalytically mediated epitaxy of 3D semiconductors on van der Waals substrates

The formation of well-controlled interfaces between materials of different structure and bonding is a key requirement when developing new devices and functionalities. Of particular importance are epitaxial or low defect density interfaces between two-dimensional materials and three-dimensional semiconductors or metals, where an interfacial structure influences electrical conductivity in field effect and optoelectronic devices, charge transfer for spintronics and catalysis, and proximity-induced superconductivity. Epitaxy and hence well-defined interfacial structure has been demonstrated for several metals on van der Waals-bonded substrates. Semiconductor epitaxy on such substrates has been harder to control, for example during chemical vapor deposition of Si and Ge on graphene. Here, we demonstrate a catalytically mediated het-eroepitaxy approach to achieve epitaxial growth of three-dimensional semiconductors such as Ge and Si on van der Waals-bonded materials such as graphene and hexagonal boron nitride. Epitaxy is "transferred" from the substrate to semiconductor nanocrystals via solid metal nano-crystals that readily align on the substrate and catalyze the formation of aligned nuclei of the semiconductor. In situ transmission electron microscopy allows us to elucidate the reaction pathway for this process and to show that solid metal nanocrystals can catalyze semiconductor growth at a significantly lower temperature than direct chemical vapor deposition or deposition mediated by liquid catalyst droplets. We discuss Ge and Si growth as a model system to explore the details of such hetero-interfacing and its applicability to a broader range of materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Metastable piezoelectric group-IV monochalcogenide monolayers with a buckled honeycomb structure

Multiple two-dimensional materials are being naïvely termed stable on the grounds of displaying phonon dispersions with no negative frequencies and of not collapsing on molecular dynamics calculations at fixed volume. But, if these phases do not possess the smallest possible structural energy, how does one understand and establish their actual meta stability? To answer this question, twelve two-dimensional group-IV monochalcogenide monolayers (SiS, SiSe, SiTe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, and PbTe) with a buckled honeycomb atomistic structure—belonging to symmetry group P3m1—displaying an out-of-plane intrinsic electric polarization are shown to be metastable by three independent methods. First, we uncover a coordination-preserving structural transformation from the low-buckled honeycomb structure onto the lower-energy Pnm2 1 (or Pmmn for PbS, PbSe, and PbTe) phase to estimate energy barriers E B that must be overcome during such structural transformation. Using the curvature of the local minima and E B as inputs to Kramers escape formula, large escape times are found, implying the structural metastability of the buckled honeycomb phase (with the exception of PbS and PbSe, these phases display escape times ranging from 700 years to multiple times the age of the universe and can be considered “stable” for practical purposes in that relative sense). The second demonstration is provided by phonon dispersion relations that include the effect of long-range Coulomb forces and display no negative vibrational modes. The third and final demonstration of structural metastability is furnished by room-temperature ab initio molecular dynamics for selected compounds. Here, the magnitude of the electronic band gap evolves with chemical composition. Different from other binary two-dimensional compounds such as transition metal dichalcogenide monolayers and hexagonal boron nitride monolayers which only develop an in-plane piezoelectric response, the twelve group-IV monochalcogenide monolayers with a buckled honeycomb structure also display out-of-plane piezoelectric properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene

To begin, as the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring the Lifshitz transition, a change in the topology of a material’s Fermi surface. Using tetralayer graphene that host two intersecting massive Dirac bands, we demonstrate multiple Lifshitz transitions and multiband transport, which manifest as a nonmonotonic dependence of conductivity on the charge density $n$ and out-of-plane electric field $D$, anomalous quantum Hall sequences and Landau level crossings that evolve with $n, D$ and $B$.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Hydrodynamic phonon transport in suspended graphene

Current reports of thermal transport in nanomaterials have demonstrated the breakdown of Fourier’s law through observations of ballistic transport. Despite its unique features, another instance of the breakdown of Fourier’s law, hydrodynamic phonon transport, has drawn less attention because it has been observed only at extremely low temperatures and narrow temperature ranges in bulk materials. Here, we predict on the basis of first-principles calculations that the hydrodynamic phonon transport can occur in suspended graphene at significantly higher temperatures and wider temperature ranges than in bulk materials. The hydrodynamic transport is demonstrated through drift motion of phonons, phonon Poiseuille flow and second sound. The significant hydrodynamic phonon transport in graphene is associated with graphene’s two-dimensional features. This research opens a new avenue for understanding and manipulating heat flow in two-dimensional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Optically controlled single-valley exciton doublet states with tunable internal spin structures and spin magnetization generation

Manipulating quantum states through light–matter interactions has been actively pursued in two-dimensional materials research. Significant progress has been made toward the optical control of the valley degrees of freedom in semiconducting monolayer transition-metal dichalcogenides, based on doubly degenerate excitons from their two distinct valleys in reciprocal space. Here, we introduce a type of optically controllable doubly degenerate exciton states that come from a single valley, dubbed as single-valley exciton doublet (SVXD) states. They are unique in that their constituent holes originate from the same valence band, making possible the direct optical control of the spin structure of the excited constituent electrons. Combining ab initio GW plus Bethe–Salpeter equation ( GW -BSE) calculations and a theoretical analysis method, we demonstrate such SVXD in substrate-supported monolayer bismuthene—which has been successfully grown using molecular beam epitaxy. In each of the two distinct valleys in the Brillouin zone, strong spin–orbit coupling and C 3 v symmetry lead to a pair of degenerate 1s exciton states (the SVXD states) with opposite spin configurations. Any coherent linear combinations of the SVXD in a single valley can be excited by light with a specific polarization, enabling full manipulation of their internal spin configurations. In particular, a controllable net spin magnetization can be generated through light excitation. Our findings open routes to control quantum degrees of freedom, paving the way for applications in spintronics and quantum information science.

2D materials↗
DOE OSTI2015

Strain-tunable topological quantum phase transition in buckled honeycomb lattices

Low-buckled silicene is a prototypical quantum spin Hall insulator with the topological quantum phase transition controlled by an out-of-plane electric field. We show that this field-induced electronic transition can be further tuned by an in-plane biaxial strain ε, owing to the curvature-dependent spin-orbit coupling (SOC): There is a Z{sub 2} = 1 topological insulator phase for biaxial strain |ε| smaller than 0.07, and the band gap can be tuned from 0.7 meV for ε=+0.07 up to 3.0 meV for ε=−0.07. First-principles calculations also show that the critical field strength E{sub c} can be tuned by more than 113%, with the absolute values nearly 10 times stronger than the theoretical predictions based on a tight-binding model. The buckling structure of the honeycomb lattice thus enhances the tunability of both the quantum phase transition and the SOC-induced band gap, which are crucial for the design of topological field-effect transistors based on two-dimensional materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Observing the semiconducting band-gap alignment of MoS{sub 2} layers of different atomic thicknesses using a MoS{sub 2}/SiO{sub 2}/Si heterojunction tunnel diode

We demonstrate a tunnel diode composed of a vertical MoS{sub 2}/SiO{sub 2}/Si heterostructure. A MoS{sub 2} flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS{sub 2} layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS{sub 2} layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2008

A New Concurrent Multiscale Methodology for Coupling Molecular Dynamics and Finite Element Analyses

The coupling of molecular dynamics (MD) simulations with finite element methods (FEM) yields computationally efficient models that link fundamental material processes at the atomistic level with continuum field responses at higher length scales. The theoretical challenge involves developing a seamless connection along an interface between two inherently different simulation frameworks. Various specialized methods have been developed to solve particular classes of problems. Many of these methods link the kinematics of individual MD atoms with FEM nodes at their common interface, necessarily requiring that the finite element mesh be refined to atomic resolution. Some of these coupling approaches also require simulations to be carried out at 0 K and restrict modeling to two-dimensional material domains due to difficulties in simulating full three-dimensional material processes. In the present work, a new approach to MD-FEM coupling is developed based on a restatement of the standard boundary value problem used to define a coupled domain. The method replaces a direct linkage of individual MD atoms and finite element (FE) nodes with a statistical averaging of atomistic displacements in local atomic volumes associated with each FE node in an interface region. The FEM and MD computational systems are effectively independent and communicate only through an iterative update of their boundary conditions. With the use of statistical averages of the atomistic quantities to couple the two computational schemes, the developed approach is referred to as an embedded statistical coupling method (ESCM). ESCM provides an enhanced coupling methodology that is inherently applicable to three-dimensional domains, avoids discretization of the continuum model to atomic scale resolution, and permits finite temperature states to be applied.

Yamakov, Vesselin↗
NASA NTRS2008

An Embedded Statistical Method for Coupling Molecular Dynamics and Finite Element Analyses

The coupling of molecular dynamics (MD) simulations with finite element methods (FEM) yields computationally efficient models that link fundamental material processes at the atomistic level with continuum field responses at higher length scales. The theoretical challenge involves developing a seamless connection along an interface between two inherently different simulation frameworks. Various specialized methods have been developed to solve particular classes of problems. Many of these methods link the kinematics of individual MD atoms with FEM nodes at their common interface, necessarily requiring that the finite element mesh be refined to atomic resolution. Some of these coupling approaches also require simulations to be carried out at 0 K and restrict modeling to two-dimensional material domains due to difficulties in simulating full three-dimensional material processes. In the present work, a new approach to MD-FEM coupling is developed based on a restatement of the standard boundary value problem used to define a coupled domain. The method replaces a direct linkage of individual MD atoms and finite element (FE) nodes with a statistical averaging of atomistic displacements in local atomic volumes associated with each FE node in an interface region. The FEM and MD computational systems are effectively independent and communicate only through an iterative update of their boundary conditions. With the use of statistical averages of the atomistic quantities to couple the two computational schemes, the developed approach is referred to as an embedded statistical coupling method (ESCM). ESCM provides an enhanced coupling methodology that is inherently applicable to three-dimensional domains, avoids discretization of the continuum model to atomic scale resolution, and permits finite temperature states to be applied.

Saether, E.↗
DOE OSTI2023

Atomic scale interface engineering for realizing a perpendicularly magnetized CoFeB-based skyrmion hosting material

Néel-type magnetic skyrmions in perpendicularly magnetized systems have attracted considerable interest due to their potential in fundamental research on topological objects and spintronics applications. Various systems have been explored to study Néel-type magnetic skyrmions, including repeated magnetic multilayers, two-dimensional materials, and single magnetic thin-films. Among these, single magnetic thin-films, especially a CoFeB single layer, offers multiple benefits, such as reduced defect energy, high mobility, and easy integration with existing magnetoresistive random access memory technology. However, optimizing CoFeB-based skyrmion hosting materials remains challenging and requires further systematic and comprehensive investigation. Here, in this study, we examine the effect of atomic-scale interface engineering by inserting a Ta layer between the CoFeB/MgO interface on perpendicular magnetic anisotropy, saturation magnetization, and Dzyaloshinskii–Moriya interaction. Moreover, we provide a guideline for engineering material parameters and demonstrate the validity of atomic-scale interface engineering. Our findings contribute to the development of optimized CoFeB-based skyrmion hosting materials.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS 2

Advances in nanoscale material characterization on two-dimensional van der Waals layered materials primarily involve their optical and electronic properties. The thermal properties of these materials are harder to access due to the difficulty of thermal measurements at the nanoscale. In this work, we create a nanoscale magnetothermal device platform to access the basic out-of-plane magnetothermal transport properties of ultrathin van der Waals materials. Specifically, the Nernst effect in the charge density wave transition metal dichalcogenide 1T-TaS 2 is examined on nano-thin flakes in a patterned device structure. It is revealed that near the commensurate charge density wave (CCDW) to nearly commensurate charge density wave (NCCDW) phase transition, the polarity of the Nernst effect changes. Since the Nernst effect is especially sensitive to changes in the Fermi surface, this suggests that large changes are occurring in the out-of-plane electronic structure of 1T-TaS 2 , which are otherwise unresolved in just in-plane electronic transport measurements. This may signal a coherent evolution of out-of-plane stacking in the CCDW! NCCDW transition.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation

The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Understanding the Lithium Storage Mechanism of Ti 3 C 2 T x MXene

MXenes, as an emerging family of conductive two-dimensional materials, hold promise for late-model electrode materials in Li-ion batteries. A primary challenge hindering the development of MXenes as electrode materials is that a complete understanding of the intrinsic storage mechanism underlying the charge/discharge behavior remains elusive. This article presents two key discoveries: first, the characteristics of the Ti 3 C 2 T x structure can be modified systematically by calcination in various atmospheres, and second, these structural changes greatly affect Li-ion storage behavior, which reveals the mechanism for lithium storage in Ti 3 C 2 T x MXene. Specifically, via ammonization, the interlayer spacing gets dilated and uniform, giving rise to only one redox couple. In stark contrast, there are two well-recognized redox couples corresponding to two interlayer spacings in pristine Ti 3 C 2 T x MXene, in which Li-ion (de)intercalation occurs between interlayers in a sequential manner as evidenced by ex situ X-ray diffraction (XRD). Notably, the XRD diffraction peaks shift hardly in the whole range of charge/discharge voltage, indicating a zero-strain feature upon Li-ion (de)intercalation. Moreover, the diffusion-controlled contribution percentage to capacity inversely depends on the scan rate. The understanding suggests a new design principle of the MXene anode: reduced lateral size to shorten the diffusion path and dilated interlayer spacing.

25 ENERGY STORAGE↗
DOE OSTI2015

Transition metal decorated graphene-like zinc oxide monolayer: A first-principles investigation

Transition metal (TM) atoms have been extensively employed to decorate the two-dimensional materials, endowing them with promising physical properties. Here, we have studied the adsorption of TM atoms (V, Cr, Mn, Fe, and Co) on graphene-like zinc oxide monolayer (g-ZnO) and the substitution of Zn by TM using first-principles calculations to search for the most likely configurations when TM atoms are deposited on g-ZnO. We found that when a V atom is initially placed on the top of Zn atom, V will squeeze out Zn from the two-dimensional plane then substitute it, which is a no barrier substitution process. For heavier elements (Cr to Co), although the substitution configurations are more stable than the adsorption ones, there is an energy barrier for the adsorption-substitution transition with the height of tens to hundreds meV. Therefore, Cr to Co prefers to be adsorbed on the hollow site or the top of oxygen, which is further verified by the molecular dynamics simulations. The decoration of TM is revealed to be a promising approach in terms of tuning the work function of g-ZnO in a large energy range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Interplay of screening and superconductivity in low-dimensional materials

A quantitative description of Coulomb interactions is developed for two-dimensional superconducting materials, enabling us to compare intrinsic with external screening effects, such as those due to substrates. Therefore, using the example of a doped monolayer of MoS 2 embedded in a tunable dielectric environment, we demonstrate that the influence of external screening is limited to a length scale, bounded from below by the effective thickness of the quasi-two-dimensional material and from above by its intrinsic screening length. As a consequence, it is found that unconventional Coulomb-driven superconductivity cannot be induced in MoS 2 by tuning the substrate properties alone. Our calculations of the retarded Morel-Anderson Coulomb potential μ* reveal that the Coulomb interactions, renormalized by the reduced layer thickness and the substrate properties, can shift the onset of the electron-phonon driven superconducting phase in monolayer MoS 2 but do not significantly affect the critical temperature at optimal doping.

2-dimensional systems↗
DOE OSTI2018

Silicon-Phosphorene Nanocavity-Enhanced Optical Emission at Telecommunications Wavelengths

Generating and amplifying light in silicon (Si) continues to attract significant attention due to the possibility of integrating optical and electronic components in a single material platform. Unfortunately, silicon is an indirect band gap material and therefore an inefficient emitter of light. With the rise of integrated photonics, the search for silicon-based light sources has evolved from a scientific quest to a major technological bottleneck for scalable, CMOS-compatible, light sources. Recently, emerging two-dimensional materials have opened the prospect of tailoring material properties based on atomic layers. Few-layer phosphorene, which is isolated through exfoliation from black phosphorus (BP), is a great candidate to partner with silicon due to its layer-tunable direct band gap in the near-infrared where silicon is transparent. Here we demonstrate a hybrid silicon optical emitter composed of few-layer phosphorene nanomaterial flakes coupled to silicon photonic crystal resonators. We show single-mode emission in the telecommunications band of 1.55 μm ($E_g$ = 0.8 eV) under continuous wave optical excitation at room temperature. The solution-processed few-layer BP flakes enable tunable emission across a broad range of wavelengths and the simultaneous creation of multiple devices. Our work highlights the versatility of the Si-BP material platform for creating optically active devices in integrated silicon chips.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Direct band gap group IV semiconductors and methods of preparing the same

A semiconductor film includes a two-dimensional (2D) material layer having a hexagonal in-plane lattice structure, and a substantially planar Group IV semiconductor layer having a direct band gap on the 2D material layer. A method of fabricating a semiconductor material includes growing a Group IV semiconductor material on a two-dimensional material having a hexagonal in-plane lattice structure. This growth process results in the Group IV semiconductor material having a direct band gap. The semiconductor films may be used in any optoelectronic device, including flexible devices.

36 MATERIALS SCIENCE↗