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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Interactions between volume and surface EM waves in layered structures

Using light scattering spectroscopy, the interaction of Surface Plasmon Polariton SPP in silver films on a glass substrate is with the incident radiation and with optical phonons of an external medium in contact with the film. The mean free path and the field strength of SPP are determined. The same SPP plays an important role in light emitting tunnel junctions (LETJ) in which an electrical current is converted into Volume Electromagnetic Wave VEW. The efficiency of light emission from LETJ through a prism coupler rather than through surface roughness is discussed. The coupling between phonon surface polaritons (PhSP) and optical guided waves (OGW) in thin films of GaP is also examined.

Ushioda, S.↗
NASA NTRS1984

C-13H3OH in OMC-1

Transition line data for C-13H3OH in OMC-1 were gathered with a superconducting tunnel junction receiver and a 512 channel spectrometer on a 10.4 m telescope at the Owens Valley Radio Observatory. The methanol was scanned at 236 GHz and an observational efficiency of 85 percent. The survey was carried out to complement the data base on the line frequencies of internal rotors such as methanol and thereby the resolution of the C-12/C-13 ratio toward the galactic center. The data indicated that previous emission lines attributed to CO(+) and CH3CHO are actually methanol emissions, and the associated C-12/C-13 ratio is about 30.

Blake, G. A.↗
NASA NTRS1987

Submillimeter-wave antennas on thin membranes

Submillimeter-wave antennas have been fabricated on 1-micron thick silicon-oxynitride membranes. This approach results in better patterns than previous lens-coupled antennas, and eliminates the dielectric loss associated with the substrate lens. Measurements on a wideband log-periodic antenna at 700 GHz, 370 GHz and 167 GHz show no sidelobes and 3-dB beamwidths between 40 and 60 deg. A linear imaging array has similar patterns at 700 GHz. Possible applications for membrane antennas include wideband superconducting tunnel-junction receivers for radio astronomy and imaging arrays for radiometry and plasma diagnostics.

Rebeiz, Gabriel M.↗
NASA NTRS1988

Accurate experimental and theoretical comparisons between superconductor-insulator-superconductor mixers showing weak and strong quantum effects

A systematic study of the gain and noise in superconductor-insulator-superconductor mixers employing Ta based, Nb based, and Pb-alloy based tunnel junctions was made. These junctions displayed both weak and strong quantum effects at a signal frequency of 33 GHz. The effects of energy gap sharpness and subgap current were investigated and are quantitatively related to mixer performance. Detailed comparisons are made of the mixing results with the predictions of a three-port model approximation to the Tucker theory. Mixer performance was measured with a novel test apparatus which is accurate enough to allow for the first quantitative tests of theoretical noise predictions. It is found that the three-port model of the Tucker theory underestimates the mixer noise temperature by a factor of about 2 for all of the mixers. In addition, predicted values of available mixer gain are in reasonable agreement with experiment when quantum effects are weak. However, as quantum effects become strong, the predicted available gain diverges to infinity, which is in sharp contrast to the experimental results. Predictions of coupled gain do not always show such divergences.

Mcgrath, W. R.↗
NASA NTRS1988

Low-noise interferometer for microwave radiometry

An interferometer for precision measurements in microwave radiometry is proposed which uses two low-noise heterodyne receivers based on SIS tunnel junction mixers in the 40-50-GHz band. The antenna interference pattern has lobes which lead to positive output signals and lobes which give negative output, and the radiometer measures the difference in the power from these lobes without beam switching or instrument motion. The present system cancels instrumental signals, has a very low 1/f noise in the output, and has a zero outpus signal when viewing a uniform source. It is noted that application of the interferometer may be limited to radiometry with relatively large beams.

Timbie, P. T.↗
NASA NTRS1988

A broad-band low-noise SIS receiver for submillimeter astronomy

A quasi-optical heterodyne receiver using a Pb-alloy superconductor-insulator-superconductor (SIS) tunnel junction as the detector and a planar logarithmic spiral antenna for the RF coupling is described, and its performance is compared with a the predicted performance of a theoretical model. Noise measurements were made in the laboratory at frequencies between 115 GHz and 761 GHz, yielding double-sideband noise temperatures ranging from 33 K to 1100 K. The receiver has also been used for astronomical spectroscopy on the Caltech Submillimeter Observatory (Mauna Kea, Hawaii) at 115, 230, 345, and 492 GHz.

Buttgenbach, Thomas H.↗
NASA NTRS1990

Development of components for submillimeter wave heterodyne radiometers at JPL

Components for the key elements of submillimeter wave heterodyne receivers are described. The devices and components are inherently space qualifiable having low power and mass needs and exhibiting robustness. Nb and NbN superconductor insulator superconductor (SIS) tunnel junctions are selected for the nonlinear mixing element because of their robustness. NbN exhibits a large superconducting bandgap, allowing operation in excess of 1500 GHz. Both waveguide mounts, for the lower frequencies and planar antenna mixer mounts for the higher frequency range, are used. Quasi-optical components are used for frequency multiplexing and combining.

Frerking, Margaret A.↗
NASA NTRS1991

GaInP2/GaAs tandem cells for space applications

The monolithic, tunnel-junction-interconnected tandem combination of a GaInP2 top cell and a GaAs bottom cell has achieved a one-sun, AM1.5 efficiency of 27.3 percent. With proper design of the top cell, air mass zero (AM0) efficiencies greater than 25 percent are possible. A description and the advantages of this device for space applications are presented and discussed. The advantages include high-voltage, low-current, two-terminal operation for simple panel fabrication, and high conversion efficiency with low-temperature coefficient. Also, because the active regions of the device are Al-free, the growth of high efficiency devices is not affected by trace levels of O2 or H2O in the MOCVD growth system.

Olson, J. M.↗
NASA NTRS1991

Sliding backshorts for planar circuits

An adjustable planar imbedding circuit based on coplanar transmission lines is presented to deal with the impedance mismatch associated with the use of the Superconductor-Insulator-Superconductor tunnel junction. The planar embedding circuit is developed with movable noncontacting shorting elements that consist of thin metallic plates with optimized arrangements of rectangular holes. The rectangular holes are placed along the insulated metallic transmission line to provide a periodic variation of the line impedance. A large reflection coefficient is demonstrated with a scale model of the sliding backshort, and values of more than -0.5 dB are reported. The shorting elements are incorporated into a low-frequency tuning circuit to test the practical tuning ranges. The backshort can be used to fashion tuning stubs with variable post-fabrication electrical lengths which relaxes the design constraints of planar integrated circuits.

Lubecke, Victor M.↗
NASA NTRS1992

Effect of an applied magnetic field on the performance of a SIS receiver near 300 GHz

A superconductor-insulator-superconductor (SIS) receiver has been successfully constructed and tested for operation at 265 - 280 GHz using 1 micron/sq area Nb-AlO(x)-Nb tunnel junctions fabricated at Stony Brook. The best performance to date is a double sideband (DSB) receiver noise temperature of 129 K at 278 GHz. It is found that suppression of the Josephson pair currents with a magnetic field is essential for good performance and a stable dc bias point. Fields as high as 280 gauss have been used with no degradation of mixing performance. The improvement in the intermediate frequency output stability with progressively increasing magnetic fields is illustrated.

Mallison, W. H.↗
NASA NTRS1992

A 200 GHz tripler using single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has a potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗
NASA NTRS1993

A 200 GHz tripler using a single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗
NASA NTRS1993

A low noise 665 GHz SIS quasi-particle waveguide receiver

Recent results on a 565-690 GHz SIS heterodyne receiver employing a 0.36 micron(sup 2) Nb/AlOx/Nb SIS tunnel junction with high quality circular non-contacting back short and E-plane tuners in a full height wave guide mount are reported. No resonant tuning structures were incorporated in the junction design at this time, even though such structures are expected to help the performance of the receiver. The receiver operates to at least the gap frequency of Niobium, approximately 680 GHz. Typical receiver noise temperatures from 565-690 GHz range from 160K to 230K with a best value of 185K DSB at 648 GHz. With the mixer cooled from 4.3K to 2K the measured receiver noise temperatures decreased by approximately 15 percent, giving roughly 180K DSB from 660 to 680 GHz. The receiver has a full 1 GHz IF pass band and was successfully installed at the Caltech Submillimeter Observatory in Hawaii.

Kooi, J. W.↗
NASA NTRS1994

A new high-sensitivity superconducting receiver for mm-wave remote-sensing spectroscopy of the stratosphere

We describe a recently constructed ground-based mm-wave spectrometer incorporating a superconducting tunnel junction as a heterodyne mixer-receiver. Under conditions of low tropospheric water vapor, the superior sensitivity of this receiver allows spectral line measurements of stratospheric molecules with mixing ratios as small as a few tenths of a part per billion (e.g., ClO, HCN) to be made in 4 to 6 hours, with a signal to noise ratio of at least 30:1. We expect to be able to halve this time by further improvement of the mixer's intrinsic noise level.

Dezafra, R. L.↗
NASA NTRS1994

Chemical beam epitaxy for high efficiency photovoltaic devices

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Bensaoula, A.↗
NASA NTRS1994

Calculation of near optimum design of InP/In(0.53)Ga(0.47)As monolithic tandem solar cells

An analysis of InP/GaAs tandem solar cell structure has been undertaken to allow for maximum AMO conversion efficiencies (space applications) while still taking into account both the theoretical and technological limitations. The dependence of intrinsic and extrinsic parameters such as diffusion lengths and generation-recombination (GR) lifetimes on N/P and P/N devices performances are clearly demonstrated. We also report for the first time the improvement attainable through the use of a new patterned tunnel junction as the inter cell ohmic interconnect. Such a design minimizes the light absorption in the interconnect region and leads to a noticeable increase in the cell efficiency. Our computations predict 27 percent AMO efficiency for N/P tandems with ideality factor gamma = 2 (GR lifetimes approximately equal 1 micron), and 36 percent for gamma = 1 (GR lifetimes approximately equals 100 microns). The method of optimization and the values of the physical and optical parameters are discussed.

Renaud, P.↗
NASA NTRS1996

Submillimeter-Wave Receiver Containing An SIS Mixer

Submillimeter-wave heterodyne receiver designed to operate at input frequencies in range of 480 to 650 GHz. Intended for use in radio astronomy at frequency of 547 or 626 GHz. Heart of receiver is waveguide mixer that includes adjustable backshort and electric-field-plane tuner. Mixing element high-current-density superconductor/insulator/superconductor (SIS) tunnel junction integrated with superconductive microstrip radio-frequency circuit that tunes out capacitance of junction; matching complex impedance of junction to available tuning range of waveguide mount.

Febvre, Pascal↗
NASA NTRS1996

Recent progress in submillimeter heterodyne receiver development

The progress made in relation to the development of sensitive submillimeter heterodyne receiver systems is reviewed. Sensitive superconductor-insulator-superconductor (SIS) tunnel junction mixers were demonstrated at frequencies of greater than 1 THz, with noise temperatures of below 1000 K. An alternative mixer technology is that of the superconducting hot electron bolometer, for which sensitivities of 1.2 THz and 2.5 THz were demonstrated. Local oscillator technology is under development. Gunn oscillators followed by Schottky varactor frequency multipliers have sufficient output power to drive SIS mixers at 1 THz. It is considered that optical photomixer local oscillators have potential for driving hot electron bolometers above 1 THz.

Zmuidzinas, J.↗