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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Effect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer

In this work, we have studied the effect of surface treatment of SiO{sub 2} dielectric layer on the reduction of the trap charge carrier density at dielectric/semiconducting interface by fabricating a metal–insulator–semiconductor (MIS) device using α, ω-dihexylcarbonylquaterthiophene as semiconducting layer. SiO{sub 2} dielectric layer has been treated with 1,1,1,3,3,3-hexamethyldisilazane (HMDS) to modify the chemical group acting as charge traps. Capacitance-voltage measurements have been performed on MIS devices fabricated on SiO{sub 2} and HMDS treated SiO{sub 2}. These data have been used for the calculation of trap charge carrier density and Debye length at the dielectric-semiconductor interface. The calculated trap charge carrier density has been found to reduce from (2.925 ± 0.049) × 10{sup 16} cm{sup −3} to (2.025 ± 0.061) × 10{sup 16} cm{sup −3} for the MIS device with HMDS treated SiO{sub 2} dielectric in comparison to that of untreated SiO{sub 2}. Next, the effect of reduction in trap charge carrier density has been studied on the performance of organic field effect transistors. The improvement in the device parameters like mobility, on/off ratio, and gate leakage current has been obtained with the effect of the surface treatment. The charge carrier mobility has been improved by a factor of 2 through this treatment. Further, the influence of the treatment was observed by atomic force microscope and Fourier transform infrared spectroscopy techniques.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure

The effects of near-interfacial trapping induced by ionizing radiation exposure of aligned single-walled carbon nanotube (SWCNT) arrays are investigated via measurements of gate hysteresis in the transfer characteristics of aligned SWCNT field-effect transistors. Gate hysteresis is attributed to charge injection (i.e., trapping) from the SWCNTs into radiation-induced traps in regions near the SWCNT/dielectric interface. Self-consistent calculations of surface-potential, carrier density, and trapped charge are used to describe hysteresis as a function of ionizing radiation exposure. Hysteresis width (h) and its dependence on gate sweep range are investigated analytically. The effects of non-uniform trap energy distributions on the relationship between hysteresis, gate sweep range, and total ionizing dose are demonstrated with simulations and verified experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Current leakage relaxation and charge trapping in ultra-porous low-k materials

Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k{sub 0}⋅(t+1){sup β−1}, where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Cryogenically cooled octupole ion trap for spectroscopy of biomolecular ions

We present here the design of a linear octupole ion trap, suitable for collisional cryogenic cooling and spectroscopy of large ions. The performance of this trap has been assessed using ultraviolet (UV) photofragmentation spectroscopy of protonated dipeptides. At the trap temperature of 6.1 K, the vibrational temperature of the ions reaches 9.1 K, although their estimated translational temperature is ∼150 K. This observation suggests that, despite the significant translational heating by radio-frequency electrical field, vibrational cooling of heavy ions in the octupole is at least as efficient as in the 22-pole ion traps previously used in our laboratory. In contrast to the 22-pole traps, excellent radial confinement of ions in the octupole makes it convenient for laser spectroscopy and boosts the dissociation yield of the stored ions to 30%. Overlap of the entire ion cloud by the laser beam in the octupole also allows for efficient UV depletion spectroscopy of ion–He clusters. The measured electronic spectra of the dipeptides and the clusters differ drastically, complicating a use of UV tagging spectroscopy for structural determination of large species.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versus 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO{sub 2} and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Remarkable charge-trapping efficiency of the memory device with (TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1} composite charge-storage dielectric

A memory device p-Si/SiO{sub 2}/(TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1}(TAO-81)/Al{sub 2}O{sub 3}/Pt was fabricated, in which a composite of two high-k dielectrics with a thickness of 1 nm was employed as the charge-trapping layer to enhance the charge-trapping efficiency of the memory device. At an applied gate voltage of ±9 V, TAO-81 memory device shows a memory window of 8.83 V in its C-V curve. It also shows a fast response to a short voltage pulse of 10{sup −5} s. The charge-trapping capability, the endurance, and retention characteristics of TAO-81 memory device can be improved by introducing double TAO-81 charge-trapping layers intercalated by an Al{sub 2}O{sub 3} layer. The charge-trapping mechanism in the memory device is mainly ascribed to the generation of the electron-occupied defect level in the band gap of Al{sub 2}O{sub 3} induced by the inter-diffusion between TiO{sub 2} and Al{sub 2}O{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Low-temperature Bessel beam trap for single submicrometer aerosol particle studies

We report on a new instrument for single aerosol particle studies at low temperatures that combines an optical trap consisting of two counter-propagating Bessel beams (CPBBs) and temperature control down to 223 K (−50 °C). The apparatus is capable of capturing and stably trapping individual submicrometer- to micrometer-sized aerosol particles for up to several hours. First results from studies of hexadecane, dodecane, and water aerosols reveal that we can trap and freeze supercooled droplets ranging in size from ∼450 nm to 5500 nm (radius). We have conducted homogeneous and heterogeneous freezing experiments, freezing-melting cycles, and evaporation studies. To our knowledge, this is the first reported observation of the freezing process for levitated single submicrometer-sized droplets in air using optical trapping techniques. These results show that a temperature-controlled CPBB trap is an attractive new method for studying phase transitions of individual submicrometer aerosol particles.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Adiabatic electron response and solitary wave generation by trapped particle nonlinearity in a hydrogen plasma

The finite amplitude ion acoustic waves that trap electrons modify the structure of the evolving nonlinear soliton solutions. In the numerical simulations, self-consistently generated solitary waves are studied that emerge as a result of a current driven microinstability growing the ion acoustic mode in a collisionless Vlasov plasma. The growth saturates as a result of nonlinear effects governed by a combination of nonlinearities originating from the hydrodynamic model and kinetic particle trapping effects. The resulting solitary waves also coexist with a finite current and an electron plasma wave capable of perturbing the trapping potential. The results of multiscale simulation are analyzed and characterized following the kinetic prescription of undamped trapped particle mode in the form of phase space vortex solutions that are generalized form of Sagdeev's solitons and obey the solutions of a modified Korteweg-de Vries equation, accounting for a stronger nonlinearity originating from the electron trapping.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

An ion trap built with photonic crystal fibre technology

We demonstrate a surface-electrode ion trap fabricated using techniques transferred from the manufacture of photonic-crystal fibres. This provides a relatively straightforward route for realizing traps with an electrode structure on the 100 micron scale with high optical access. We demonstrate the basic functionality of the trap by cooling a single ion to the quantum ground state, allowing us to measure a heating rate from the ground state of 787 ± 24 quanta/s. Variation of the fabrication procedure used here may provide access to traps in this geometry with trap scales between 100 μm and 10 μm.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG concentration, lower electron mobility, lower saturation current, and lower peak transconductance, but it has a higher threshold voltage of 1.2 V. Deep level transient spectroscopy measurements are used to obtain the accurate capture cross section of trap states. By frequency dependent capacitance and conductance measurements, the trap state density of (1.98–2.56) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.37–0.44) eV in the thin sample, while the trap state density of (2.3–2.92) × 10{sup 12 }cm{sup −2} eV{sup −1} is located at E{sub T} in a range of (0.33–0.38) eV in the thick one. It indicates that the trap states in the thin sample are deeper than those in the thick one.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Comparative study on the charge-trapping properties of TaAlO and ZrAlO high-k composites with designed band alignment

The charge-trapping memory (CTM) structures Pt/Al{sub 2}O{sub 3}/TaAlO/Al{sub 2}O{sub 3}/p-Si and Pt/Al{sub 2}O{sub 3}/ZrAlO/Al{sub 2}O{sub 3}/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-k composites TaAlO and ZrAlO were specially designed. With a lower PBCB difference between TaAlO and p-Si than that between ZrAlO and p-Si, TaAlO CTM device shows a better charge-trapping performance. A density of trapped charges 2.88 × 10{sup 13}/cm{sup 2} at an applied voltage of ±7 V was obtained for TaAlO CTM device, and it could keep about 60% of initially trapped charges after 10 years. It was suggested that the PBCB difference between high-k composite and p-Si dominates their charge-trapping behaviors.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Extending the applicability of an open-ring trap to perform experiments with a single laser-cooled ion

A special ion trap was initially built up to perform β-ν correlation experiments with radioactive ions. The trap geometry is also well suited to perform experiments with laser-cooled ions, serving for the development of a new type of Penning trap, in the framework of the project TRAPSENSOR at the University of Granada. The goal of this project is to use a single {sup 40}Ca{sup +} ion as detector for single-ion mass spectrometry. Within this project and without any modification to the initial electrode configuration, it was possible to perform Doppler cooling on {sup 40}Ca{sup +} ions, starting from large clouds and reaching single ion sensitivity. This new feature of the trap might be important also for other experiments with ions produced at radioactive ion beam facilities. In this publication, the trap and the laser system will be described, together with their performance with respect to laser cooling applied to large ion clouds down to a single ion.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Electrical and luminescent properties and deep trap spectra of Si doped GaN films grown by maskless epitaxial lateral overgrowth (MELO) are reported. The dislocation density in the wing region of the structure was 10{sup 6 }cm{sup −2}, while in the seed region it was 10{sup 8 }cm{sup −2}. The major electron traps present had activation energy of 0.56 eV and concentrations in the high 10{sup 15 }cm{sup −3} range. A comparison of diffusion length values and 0.56 eV trap concentration in MELO GaN and epitaxial lateral overgrowth (ELOG) GaN showed a good correlation, suggesting these traps could be effective in carrier recombination. The doped MELO films were more uniform in their electrical properties than either ELOG films or undoped MELO films. We also discuss the differences in deep trap spectra and luminescence spectra of low-dislocation-density MELO, ELOG, and bulk n-GaN samples grown by hydride vapor phase epitaxy. It is suggested that the observed differences could be caused by the differences in oxygen and carbon contamination levels.

36 MATERIALS SCIENCE↗
DOE OSTI2016

The effects of nanoparticles and organic additives with controlled dispersion on dielectric properties of polymers: Charge trapping and impact excitation

This work presents a comprehensive investigation into the effects of nanoparticles and organic additives on the dielectric properties of insulating polymers using reinforced silicone rubber as a model system. TiO{sub 2} and ZrO{sub 2} nanoparticles (d = 5 nm) were well dispersed into the polymer via a bimodal surface modification approach. Organic molecules with the potential of voltage stabilization were further grafted to the nanoparticle to ensure their dispersion. These extrinsic species were found to provide deep traps for charge carriers and exhibited effective charge trapping properties at a rather small concentration (∼10{sup 17} cm{sup −3}). The charge trapping is found to have the most significant effect on breakdown strength when the electrical stressing time is long enough that most charges are trapped in the deep states. To establish a quantitative correlation between the trap depth and the molecular properties, the electron affinity and ionization energy of each species were calculated by an ab initio method and were compared with the experimentally measured values. The correlation however remains elusive and is possibly complicated by the field effect and the electronic interactions between different species that are not considered in this computation. At high field, a super-linear increase of current density was observed for TiO{sub 2} filled composites and is likely caused by impact excitation due to the low excitation energy of TiO{sub 2} compared to ZrO{sub 2}. It is reasoned that the hot charge carriers with energies greater than the excitation energy of TiO{sub 2} may excite an electron-hole pair upon collision with the NP, which later will be dissociated and contribute to free charge carriers. This mechanism can enhance the energy dissipation and may account for the retarded electrical degradation and breakdown of TiO{sub 2} composites.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Magneto-optical trap formed by elliptically polarised light waves for Mg atoms

We consider a magneto-optical trap (MOT) formed by elliptically polarised waves for {sup 24}Mg atoms on a closed optical {sup 3}P{sub 2} → {sup 3}D{sub 3} (λ = 383.8 nm) transition in the ε – θ – ε̄ configuration of the field. Compared with a known MOT formed by circularly polarised waves (σ{sub +} – σ{sub -} configuration), the suggested configuration of the trap formed by fields of ε – θ – ε̄ configuration allows deeper sub-Doppler cooling of trapped {sup 24}Mg atoms, which cannot be implemented in a conventional trap formed by fields of σ{sub +} – σ{sub -} configuration. (optical traps)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Planetary populations in the mass-period diagram: A statistical treatment of exoplanet formation and the role of planet traps

The rapid growth of observed exoplanets has revealed the existence of several distinct planetary populations in the mass-period diagram. Two of the most surprising are (1) the concentration of gas giants around 1 AU and (2) the accumulation of a large number of low-mass planets with tight orbits, also known as super-Earths and hot Neptunes. We have recently shown that protoplanetary disks have multiple planet traps that are characterized by orbital radii in the disks and halt rapid type I planetary migration. By coupling planet traps with the standard core accretion scenario, we showed that one can account for the positions of planets in the mass-period diagram. In this paper, we demonstrate quantitatively that most gas giants formed at planet traps tend to end up around 1 AU, with most of these being contributed by dead zones and ice lines. We also show that a large fraction of super-Earths and hot Neptunes are formed as 'failed' cores of gas giants—this population being constituted by comparable contributions from dead zone and heat transition traps. Our results are based on the evolution of forming planets in an ensemble of disks where we vary only the lifetimes of disks and their mass accretion rates onto the host star. We show that a statistical treatment of the evolution of a large population of planetary cores caught in planet traps accounts for the existence of three distinct exoplanetary populations—the hot Jupiters, the more massive planets around r = 1 AU, and the short-period super-Earths and hot Neptunes. There are very few populations that feed into the large orbital radii characteristic of the imaged Jovian planet, which agrees with recent surveys. Finally, we find that low-mass planets in tight orbits become the dominant planetary population for low-mass stars (M {sub *} ≤ 0.7 M {sub ☉}).

79 ASTRONOMY AND ASTROPHYSICS↗