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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

On the theoretical limitations in estimating thickness of a plate-like structure from a full-field single-tone response Lamb wave measurement

A persistent question in wavenumber analysis in the estimation of thickness from a steady-state wave field is identifying the theoretical sensitivity of the system. Here, a well-known trade-off between spatial frequency/wavenumber resolution and thickness resolution exists. The current work presents a calculation of the Cramer-Rao Lower bound (CRLB), specifically as applied to thickness estimates, for a 2-dimensional multi-mode waveform in Gaussian noise. Cases of near-field and far-field excitation are considered, and transducer position with respect to the scan area is also varied. Additionally, we consider the CRLB in a plate with multiple sources, simulated as sources placed on the boundary of the plate. We conclude by presenting the CRLB values in terms of frequency for various thicknesses, and by presenting optimal excitation frequencies for a nominal thickness, based on the CRLB.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Direct Synthesis of Six-Monolayer (1.9 nm) Thick Zinc-Blende CdSe Nanoplatelets Emitting at 585 nm

Here, quasi-two-dimensional semiconductor nanoplatelets (NPLs) have garnered widespread interest because of their uniquely narrow emission spectra and favorable characteristics for optical gain and lasing.(1–5) Strongly quantum confined along thickness, NPLs exhibit the electronic structure of quantum wells determined by their thickness, which can be controlled with atomic precision.(6–10) Among all semiconductor NPLs, CdSe NPLs are probably the most studied. So far, four kinds of CdSe NPLs, emitting at around 396 nm, 463 nm, 513m, and 553 nm, have been intensely investigated for almost a decade.(11–18) Despite some early confusions in identifying actual thicknesses of those NPLs, they have been successfully assigned to be 2-monolayer (2 ML) to 5-monolayer (5 ML) thickness by high-resolution TEM.(19) Here, nML thickness corresponds to n chalcogen layers sandwiched between n + 1 metal layers. Another kind of NPLs with 6MLs of CdSe, once briefly mentioned in 2013,(20) however, was not explored, likely because its synthesis proved hard to reproduce. The 6 ML CdSe NPLs can be prepared by the colloidal atomic layer deposition (c-ALD) method,(21) but there have been no reports on direct synthesis of 6 ML CdSe NPLs, and their direct synthesis has been in doubt as being difficult by traditional approaches.(22,23)

36 MATERIALS SCIENCE↗
DOE OSTI2019

Thicknesses of Chemically Altered Zones in Shale Matrices Resulting from Interactions with Hydraulic Fracturing Fluid

Hydraulic fracturing of unconventional shale reservoirs increases the fracture network surface area to access hydrocarbons from the low permeability rock matrix. Porosity and permeability of the matrix, through which hydrocarbons migrate to fractures, are important for determining production efficiency and can be altered by chemical interactions between shale and hydraulic fracturing fluids (HFFs). Here, we present results from an experimental study that characterizes the thickness of the alteration zone in the shale matrix after shale–HFF interactions. Experiments were conducted with whole cores submerged in HFF both with and without added barium and sulfate to promote barite scale formation. After 3 weeks of reaction at 77 bar and 80°C, the cores were characterized using X-ray microtomography, synchrotron X-ray fluorescence microprobe imaging, and synchrotron X-ray absorption spectroscopy. Our results show that the thickness of the altered zone depends on shale mineralogical composition and varies for different chemical reactions. Reactions between the low-carbonate Marcellus shale and HFF, pyrite (FeS 2 ) oxidation manifests as both a thick zone of sulfur oxidation (>0.5 cm) and a thinner zone of iron oxidation (100–150 $μ$m). Carbonate dissolution extended 100–200 μm into the matrix, with the resulting observable secondary porosity localized at the shale–fluid interface where mineral grains were removed by either dissolution or mechanical erosion. In solutions oversaturated with respect to barite, barite precipitates were observed in the reaction fluid and at the shal–HFF interface. In contrast, the carbonate dissolution zone in the high-carbonate Eagle Ford was only 30–40 μm thick, within which a uniform texture of increased porosity was observed. Pyrite oxidation in the Eagle Ford was evident from an iron oxidation zone (150–200 μm thick), while sulfur oxidation was minor and hard to observe. Barite precipitation extended 1–2 mm into the matrix when the initial HFF was oversaturated with respect to barite, filling shale microcracks down to the submicrometer length scale. Our findings provide a scientific basis to predict the extent of chemical alteration in shale reservoirs during hydraulic fracturing and its impacts on hydrocarbon production.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Unraveling the Effects of Hierarchical Bimodal Microscale Porosity on Thick Electrodes

The thick electrode design is preferential in high-energy lithium-ion batteries (LIBs) systems. However, the sluggish ionic transport in homogeneous porous thick electrodes severely limits the areal capacity at high charging/discharging rates. The hierarchical porous design is a promising approach to mitigate kinetic limitations because it can distribute mass effectively in natural systems. In this study, the effects of bimodal microscale pores are fully investigated in thick electrodes from both architectural and electrochemical perspectives. Notably, by introduction of the bimodal microscale porous structure, the rate capability improves remarkably in thick electrodes with a low porosity (39%). Herein, by combining experimental results with simulations, this work presents a rational design guideline for preparing thick electrodes with a porosity at the commercial level, as well as simultaneous high energy and power densities, which brings new insights into the advanced electrode architecture design in scalable high-energy and high-power energy storage systems for practical applications.

25 ENERGY STORAGE↗
DOE OSTI2018

Thickness Limit for Alignment of Block Copolymer Films Using Solvent Vapor Annealing with Shear

The swelling and deswelling of a cross-linked polydimethylsiloxane (PDMS) pad adhered to a block copolymer (BCP) film during solvent vapor annealing (SVA) provides sufficient shear force to produce highly aligned domains over macroscopic dimensions in thin films. Here in this paper, we examine how far this alignment can propagate through the thickness of a BCP film to understand the limits for efficacy of the SVA-S (SVA with shear) process. Films of cylinder-forming polystyrene-block-polyisoprene-block-polystyrene (SIS) ranging from 100 nm to more than 100 μm are examined using the same processing conditions. The SIS surface in contact with the PDMS is always well-aligned, with Herman’s orientation parameter (S) exceeding 0.9 as determined from AFM micrographs, but the bottom surface in contact with the silicon wafer is not aligned for the thickest films. The average orientation through the film thickness was determined by transmission small-angle X-ray scattering (SAXS), with S decreasing gradually with increasing thickness for SIS films thinner than 24 μm, but S remains >0.8. S precipitously decreases for thicker films. A stop-etch-image approach allows the gradient in orientation through the thickness to be elucidated. The integration of this local orientation profile agrees with the average S obtained from SAXS. These results demonstrate the effective alignment of supported thick BCP films of order 10 μm, which could be useful for BCP coatings for optical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Defect Annihilation in the Directed Self-Assembly of Block Copolymers in Films with Increasing Thickness.

We investigate directed self-assembly (DSA), with 3x density multiplication, of symmetric polystyrene-block-poly(methyl methacrylate) (L-0 = 28 nm) with increasing film thicknesses and reveal a thickness limit above which the defect annihilation mechanism is different than in thinner films. Block copolymer films of increasing thickness underwent DSA on a macroscopic chemical pattern under optimum geometrical and chemical conditions. Scanning electron microscopy and grazing-incidence small-angle X-ray scattering (GISAXS) were used to characterize the long-range ordering and buried structures as a function of film thickness and thermal annealing time. Rotational GISAXS measurements revealed a critical thickness of similar to 3L(0,) below which defect annihilation is cooperative across the film depth and above which it is faster at the free surface than in the film's interior. In the latter case, defects can persist in the film's interior despite perfect assembly and registration at the free surface of the film.

Chen, Xuanxuan↗
DOE OSTI2020

Thickness-Tunable Self-Assembled Colloidal Nanoplatelet Films Enable Ultrathin Optical Gain Media

We propose and demonstrate construction of highly uniform, multilayered superstructures of CdSe/CdZnS core/shell colloidal nanoplatelets (NPLs) using liquid interface self-assembly. These NPLs are sequentially deposited onto a solid substrate into slabs having monolayer-precise thickness across tens of cm(2) areas. Because of near-unity surface coverage and excellent uniformity, amplified spontaneous emission (ASE) is observed from an uncharacteristically thin film having 6 NPL layers, corresponding to a mere 42 nm thickness. Furthermore, systematic studies on optical gain of these NPL superstructures having thicknesses ranging from 6 to 15 layers revealed the gradual reduction in gain threshold with increasing number of layers, along with a continuous spectral shift of the ASE peak (similar to 18 nm). These observations can be explained by the change in the optical mode confinement factor with the NPL waveguide thickness and propagation wavelength. This bottom-up construction technique for thickness-tunable, three-dimensional NPL superstructures can be used for large-area device fabrication.

Erdem, Onur↗
DOE OSTI2023

Three‐Dimensional Magnetic Reconnection Spreading in Current Sheets of Non‐Uniform Thickness

Abstract Magnetic reconnection in naturally occurring and laboratory settings often begins locally and elongates, or spreads, in the direction perpendicular to the plane of reconnection. Previous work has largely focused on current sheets with a uniform thickness, for which the predicted spreading speed for anti‐parallel reconnection is the local speed of the current carriers. We derive a scaling theory of three‐dimensional (3D) spreading of collisionless anti‐parallel reconnection in a current sheet with its thickness varying in the out‐of‐plane direction, both for spreading from a thinner to thicker region and a thicker to thinner region. We derive an expression for calculating the time it takes for spreading to occur for a current sheet with a given profile of its thickness. A key result is that when reconnection spreads from a thinner to a thicker region, the spreading speed in the thicker region is slower than both the Alfvén speed and the speed of the local current carriers by a factor of the ratio of thin to thick current sheet thicknesses. This is important because magnetospheric and solar observations have previously measured the spreading speed to be slower than previously predicted, so the present mechanism might explain this feature. We confirm the theory via a parametric study using 3D two‐fluid numerical simulations. We use the prediction to calculate the time scale for reconnection spreading in Earth's magnetotail during geomagnetic activity. The results are also potentially important for understanding reconnection spreading in solar flares and the dayside magnetopause of Earth and other planets.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Quantification of thickness and wrinkling of exfoliated two-dimensional zeolite nanosheets

Some two-dimensional (2D) exfoliated zeolites are single- or near single-unit cell thick silicates that can function as molecular sieves. Although they have already found uses as catalysts, adsorbents and membranes precise determination of their thickness and wrinkling is critical as these properties influence their functionality. Here we demonstrate a method to accurately determine the thickness and wrinkles of a 2D zeolite nanosheet by comprehensive 3D mapping of its reciprocal lattice. Since the intensity modulation of a diffraction spot on tilting is a fingerprint of the thickness, and changes in the spot shape are a measure of wrinkling, this mapping is achieved using a large-angle tilt-series of electron diffraction patterns. As a result, application of the method to a 2D zeolite with MFI structure reveals that the exfoliated MFI nanosheet is 1.5 unit cells (3.0 nm) thick and wrinkled anisotropically with up to 0.8 nm average surface roughness.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Unit-cell thick BaTiO{sub 3} blocks octahedral tilt propagation across oxide heterointerface

We fabricated SrRuO{sub 3}/BaTiO{sub 3}/GdScO{sub 3} heterostructures in which the BaTiO{sub 3} layer is one unit cell thick by pulsed laser deposition and elucidated how the BaTiO{sub 3} layer influences structural and magneto-transport properties of the SrRuO{sub 3} layer through octahedral connections across the heterointerface. Our X-ray-diffraction-based structural characterizations show that while an epitaxial SrRuO{sub 3} layer grown directly on a GdScO{sub 3} substrate is in the monoclinic phase with RuO{sub 6} octahedral tilts, a one-unit-cell-thick BaTiO{sub 3} layer inserted between SrRuO{sub 3} and GdScO{sub 3} stabilizes the tetragonal SrRuO{sub 3} layer with largely reduced RuO{sub 6} tilts. Our high-angle annular dark-field and annular bright-field scanning transmission electron microscopy observations provide an atomic-level view of the octahedral connections across the heterostructure and reveal that the BaTiO{sub 3} layer only one unit cell thick is thick enough to stabilize the RuO{sub 6}-TiO{sub 6} octahedral connections with negligible in-plane oxygen atomic displacements. This results in no octahedral tilts propagating into the SrRuO{sub 3} layer and leads to the formation of a tetragonal SrRuO{sub 3} layer. The magneto-transport property characterizations also reveal a strong impact of the octahedral connections modified by the inserted BaTiO{sub 3} layer on the spin-orbit interaction of the SrRuO{sub 3} layer. The SrRuO{sub 3} layer on BaTiO{sub 3}/ GdScO{sub 3} has in-plane magnetic anisotropy. This is in contrast to the magnetic anisotropy of the monoclinic SrRuO{sub 3} films on the GdScO{sub 3} substrate, in which the easy axis is ∼45° to the film surface normal. Our results demonstrate that the one-unit-cell-thick layer of BaTiO{sub 3} can control and manipulate the interfacial octahedral connection closely linked to the structure-property relationship of heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Optical spectroscopy of sputtered nanometer-thick yttrium iron garnet films

Nanometer (nm)-thick yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) films present interest for spintronics. This work employs spectral ellipsometry and magneto-optic Kerr effect (MOKE) spectra to characterize nm-thick YIG films grown on single-crystal Gd{sub 3}Ga{sub 5}O{sub 12} substrates by magnetron sputtering. The thickness (t) of the films ranges between 10 nm and 40 nm. Independent on t, the polar MOKE hysteresis loops saturate in the field of about 1.8 kOe, consistent with the saturation magnetization in bulk YIG (4πM{sub s} ≈ 1.75 kG). The MOKE spectrum measured at photon energies between 1.3 eV and 4.5 eV on the 38-nm-thick film agrees with that measured on single-crystal YIG bulk materials. The MOKE spectrum of the 12-nm-thick film still preserves the structure of the bulk YIG but its amplitude at lower photon energies is modified due to the fact that the radiation penetration depth exceeds 20 nm. The t dependence of the MOKE amplitude is consistent with MOKE calculations. The results indicate that the films are stoichiometric, strain free, without Fe{sup 2+}, and preserve bulk YIG properties down to t ≈ 10 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effect of photoanode thickness on electrochemical performance of dye sensitized solar cell

The thickness of photoanode is crucial as it adsorbed a large amount of dye molecules that provide electrons for generation of electricity in dye sensitized solar cell (DSC). Thus, in order to realize the practical application of DSC, study on various thickness of photoanode need to be carried out to analyze its effect on the electrochemical behavior of dye sensitized solar cell. To enhance the conversion efficiency, an additional layer of TiO{sub 2} using TiCl{sub 4} treatment was deposited prior to the deposition of the photoanode (active area of 1cm{sup 2}) with the thickness of 6, 12, 18, 24, and 30 µm on fluorine doped tin oxide (FTO) glass substrate. The resulting photoanode after the soak in N719 dye for more than 12hrs were used to be assembled in a test cell in combination with liquid electrolyte and counter electrode. The fabricated cells were characterized by solar simulator, ultraviolet-visible spectroscopy (UV-VIS), and electrochemical impedance spectroscopy (EIS). Scanning electron microscopy (SEM) was used to approximate the thickness of photoanode. An optimum power conversion efficiency of 4.54% was obtained for the cell fabricated with 18 µm photoanode thickness. This is attributed to the reduced resistance related to electron transport in the TiO{sub 2}/dye/electrolyte interface as proven by the EIS result. This led to the reduction of internal resistance, the increase in the electron life time and the improvement in the conversion efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performed by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Simultaneous thickness and thermal conductivity measurements of thinned silicon from 100 nm to 17 μm

Studies of size effects on thermal conductivity typically necessitate the fabrication of a comprehensive film thickness series. In this Letter, we demonstrate how material fabricated in a wedged geometry can enable similar, yet higher-throughput measurements to accelerate experimental analysis. Frequency domain thermoreflectance (FDTR) is used to simultaneously determine the thermal conductivity and thickness of a wedged silicon film for thicknesses between 100 nm and 17 μm by considering these features as fitting parameters in a thermal model. FDTR-deduced thicknesses are compared to values obtained from cross-sectional scanning electron microscopy, and corresponding thermal conductivity measurements are compared against several thickness-dependent analytical models based upon solutions to the Boltzmann transport equation. Our results demonstrate how the insight gained from a series of thin films can be obtained via fabrication of a single sample.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thickness and temperature dependence of the atomic-scale structure of SrRuO 3 thin films

The temperature-dependent layer-resolved structure of 3 to 44 unit cell thick SrRuO 3 (SRO) films grown on Nb-doped SrTiO 3 substrates is investigated using a combination of high-resolution synchrotron x-ray diffraction and high-resolution electron microscopy to understand the role that structural distortions play in suppressing ferromagnetism in ultra-thin SRO films. The oxygen octahedral tilts and rotations and Sr displacements characteristic of the bulk orthorhombic phase are found to be strongly dependent on temperature, the film thickness, and the distance away from the film–substrate interface. For thicknesses, t, above the critical thickness for ferromagnetism (t > 3 uc), the orthorhombic distortions decrease with increasing temperature above T C . Below T C , the structure of the films remains constant due to the magneto-structural coupling observed in bulk SRO. The orthorhombic distortions are found to be suppressed in the 2–3 interfacial layers due to structural coupling with the SrTiO 3 substrate and correlate with the critical thickness for ferromagnetism in uncapped SRO films.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Strain- and thickness-dependent magnetic properties of epitaxial La 0.67 Sr 0.33 CoO 3 /La 0.67 Sr 0.33 MnO 3 bilayers

Magnetic properties and interfacial phenomena of epitaxial perovskite oxides depend sensitively on parameters such as film thickness and strain state. In this work, epitaxial La0 .67 Sr 0.33 CoO 3 (LSCO)/La 0.67 Sr 0.33 MnO 3 (LSMO) bilayers were grown on NdGaO 3 (NGO) and LaAlO 3 (LAO) substrates with a fixed LSMO thickness of 6 nm, and LSCO thickness (t LSCO ) varying from 2 to 10 nm. Soft x-ray magnetic spectroscopy revealed that magnetically active Co 2+ ions that strongly coupled to the LSMO layer were observed below a critical t LSCO for bilayers grown on both substrates. On LAO substrates, this critical thickness was 2 nm, above which the formation of Co 2+ ions was quickly suppressed leaving only a soft LSCO layer with mixed valence Co 3+ /Co 4+ ions. The magnetic properties of both LSCO and LSMO layers displayed strong t LSCO dependence. This critical t LSCO increased to 4 nm on NGO substrates, and the magnetic properties of only the LSCO layer displayed t LSCO dependence. A non-magnetic layer characterized by Co 3+ ions and with a thickness below 2 nm exists at the LSCO/substrate interface for both substrates. Therefore, the results contribute to the understanding of interfacial exchange spring behavior needed for applications in next generation spintronic and magnetic memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Thickness dependent OER electrocatalysis of epitaxial thin film of high entropy oxide

High entropy oxides (HEOs), which contain multiple elements in the same crystallographic site, are a promising platform for electrocatalysis in oxygen evolution reaction (OER). Investigating these materials in epitaxial thin film form expands the possibility of tuning OER activity by several means, which are not realizable in polycrystalline samples. To date, very few such studies have been reported. In this work, the OER activity of single-crystalline thin films of (La 0.2 Pr 0.2 Nd 0.2 Sm 0.2 Eu 0.2 )NiO 3 , grown on NdGaO 3 substrates have been investigated in 0.1 M KOH electrolyte as a function of film thickness. The OER activity increases with the thickness of the film. X-ray absorption spectroscopy measurements find an increase in Ni $d$-O $p$ covalency and a decrease in charge transfer energy with the increase in film thickness. These facilitate higher charge transfer between Ni and surface adsorbates, increasing OER activity. However, the OER process leads to excessive leaching of thicker films and the OER activity of a 75 unit cell thick film is found to be optimal in the present study. In conclusion, this work demonstrates that the thickness of perovskite oxides can be used as a parameter to enhance OER activity.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs current density relationship, phase space filling, quantum-confined Stark effect, and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for QWs having constant In composition. Despite improved control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance in enhancement effects on the radiative and intrinsic Auger–Meitner recombination coefficients. The imbalance in enhancement effects results in a decline in internal quantum efficiency and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. Here, we also investigate how LED modulation bandwidth varies with QW thickness, identifying the key trends and their implications for device performance.

36 MATERIALS SCIENCE↗