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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Revealing flow behaviors of metallic glass based on activation of flow units

Atomic level flow plays a critical role in the mechanical behavior of metallic glass (MG) while the connection between the flow and the heterogeneous microstructure of the glass remains unclear. We describe the heterogeneity of MGs as the elastic matrix with “inclusions” of nano-scale liquid-like flow units, and the plastic flow behavior of MGs is considered to be accommodated by the flow units. We show that the model can explain the various deformation behaviors, the transformation from inhomogeneous deformation to homogeneous flow upon strain rate or temperature, and the deformation map in MGs, which might provide insights into the flow mechanisms in glasses and inspiration for improving the plasticity of MGs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Hot Deformation Characteristics and Processing Map of FV520B Martensitic Precipitation-Hardened Stainless Steel

Hot deformation characteristics of FV520B martensitic precipitation-hardened stainless steel were investigated in the temperature range of 850-1150 °C and strain rate range of 0.005-0.5 s{sup −1} with true strain 0.8 by using Gleeble-3500 thermo-mechanical simulator. Critical stress and corresponding critical strain for dynamic recrystallization initiation were calculated. The constitutive equation was developed by employing Arrhenius constitutive model to represent the nonlinear relationship of true stress and deformation parameters including temperature, strain rate and strain. The correlation coefficient and average absolute relative error are 0.9979 and 2.225%, which indicates the good predictive accuracy of the established constitutive equations. Processing maps were constructed at different plastic strains levels based on dynamic material model (DMM) and established constitutive equation. Combining the processing map with microstructure, the optimum region for good workability is designated as the temperature range of 1050-1125 °C and strain rate range of 0.027-0.23 s{sup −1} with peak efficiency of 0.32. Homogeneous fine and equiaxed dynamic recrystallization (DRX) grains can be found in this optimum according to the microstructure metallographic pictures.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Enhancement of two dimensional electron gas concentrations due to Si{sub 3}N{sub 4} passivation on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure: strain and interface capacitance analysis

Enhancement of two dimensional electron gas (2DEG) concentrations at Al{sub 0.3}Ga{sub 0.7}N/GaN hetero interface after a-Si{sub 3}N{sub 4} (SiN) passivation has been investigated from non-destructive High Resolution X-ray Diffraction (HRXRD) analysis, depletion depth and capacitance-voltage (C-V) profile measurement. The crystalline quality and strained in-plane lattice parameters of Al{sub 0.3}Ga{sub 0.7}N and GaN were evaluated from double axis (002) symmetric (ω-2θ) diffraction scan and double axis (105) asymmetric reciprocal space mapping (DA RSM) which revealed that the tensile strain of the Al{sub 0.3}Ga{sub 0.7}N layer increased by 15.6% after SiN passivation. In accordance with the predictions from theoretical solution of Schrödinger-Poisson’s equations, both electrochemical capacitance voltage (ECV) depletion depth profile and C-V characteristics analyses were performed which implied effective 9.5% increase in 2DEG carrier density after passivation. The enhancement of polarization charges results from increased tensile strain in the Al{sub 0.3}Ga{sub 0.7}N layer and also due to the decreased surface states at the interface of SiN/Al{sub 0.3}Ga{sub 0.7}N layer, effectively improving the carrier confinement at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2014

X-ray Mapping of Nanoparticle Superlattice Thin Films

We combine grazing-incidence and transmission small-angle X-ray diffraction with electron microscopy studies to characterize the structure of nanoparticle films with long-range order. Transmission diffraction is used to collect in-plane diffraction data from single grains and locally aligned nanoparticle superlattice films. Systematic mapping of samples can be achieved by translating the sample in front of the X-ray beam with a spot size selected to be on the order of superlattice grain features. This allows a statistical determination of superlattice grain size and size distribution over much larger areas than typically accessible with electron microscopy. Transmission X-ray measurements enables spatial mapping of the grain size, orientation, uniformity, strain, or crystal projections and polymorphs. Furthermore, we expand this methodology to binary nanoparticle superlattice and nanorod superlattice films. Our study provides a framework for characterization of nanoparticle superlattices over large areas which complements or expands microstructure information from real-space imaging.

GISAXS↗
DOE OSTI2015

Absence of low temperature phase transitions and enhancement of ferroelectric transition temperature in highly strained BaTiO{sub 3} epitaxial films grown on MgO Substrates

Recently, a large enhancement in the ferroelectric transition temperature of several oxides is reported by growing the respective thin films on appropriate substrates. This phenomenon is correlated with high residual strain in thin films often leading to large increase in the tetragonality of their crystal structure. However, such an enhancement of transition temperature is usually limited to very thin films of ∼10 nm thickness. Here, we report growth of fully strained epitaxial thin films of BaTiO{sub 3} of 400 nm thickness, which are coherently grown on MgO substrates by pulsed laser deposition technique. Conventional high resolution x-ray diffraction and also the reciprocal space map measurements confirm that the film is fully strained with in-plane tensile strain of 5.5% that dramatically increases the tetragonality to 1.05. Raman measurements reveal that the tetragonal to cubic structural phase transition is observed at 583 K, which results in an enhancement of ∼200 K. Furthermore, temperature dependent Raman studies on these films corroborate absence of all the low temperature phase transitions. Numerical calculations based on thermodynamical model predict a value of the transition temperature that is greater than 1500 °C. Our experimental results are therefore in clear deviation from the existing strain dependent phase diagrams.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Hot deformation characterization of duplex low-density steel through 3D processing map development

The high temperature deformation behavior of duplex low-density Fe–18Mn–8Al–0.8C steel was investigated at temperatures in the range of 600–1000 °C. The primary constitutive analysis indicated that the Zener–Hollomon parameter, which represents the coupled effects of temperature and strain rate, significantly varies with the amount of deformation. Accordingly, the 3D processing maps were developed considering the effect of strain and were used to determine the safe and unsafe deformation conditions in association with the microstructural evolution. The deformation at efficiency domain I (900–1100 °C\10{sup −} {sup 2}–10{sup −} {sup 3} s{sup −} {sup 1}) was found to be safe at different strains due to the occurrence of dynamic recrystallization in austenite. The safe efficiency domain II (700–900 °C\1–10{sup −} {sup 1} s{sup −} {sup 1}), which appeared at logarithmic strain of 0.4, was characterized by deformation induced ferrite formation. Scanning electron microscopy revealed that the microband formation and crack initiation at ferrite\austenite interphases were the main causes of deformation instability at 600–800 °C\10{sup −} {sup 2}–10{sup −} {sup 3} s{sup −} {sup 1}. The degree of instability was found to decrease by increasing the strain due to the uniformity of microbanded structure obtained at higher strains. The shear band formation at 900–1100 °C\1–10{sup −} {sup 1} s{sup −} {sup 1} was verified by electron backscattered diffraction. The local dynamic recrystallization of austenite and the deformation induced ferrite formation were observed within shear-banded regions as the results of flow localization. - Graphical abstract: Display Omitted - Highlights: • The 3D processing map is developed for duplex low-density Fe–Mn–Al–C steel. • The efficiency domains shrink, expand or appear with increasing strain. • The occurrence of DRX and DIFF increases the power efficiency. • Crack initiation at α/γ interphase and shear banding lead to failure.

36 MATERIALS SCIENCE↗
NASA NTRS1988

The stress field in an edge cracked plate in antiplane deformation

The antiplane strain problem of an edge cracked elastic plate subjected to a surface displacement load is solved, and the surface line loads are obtained using conformal mapping techniques. Results are presented for the yield, stress, strain and displacement distributions, and stress intensity factors in the plate. A superposition technique and Green's functions are used to determine the strain field on the upper plate surface due to arbitrarily applied tensile stress on the lower plate surface.

Li, V. C.↗
DOE OSTI2021

Dynamic recrystallization of a wrought magnesium alloy: Grain size and texture maps and their application for mechanical behavior predictions

Effect of dynamic recrystallization (DRX) on the grain refinement and texture modification was studied by conducting a series of hot compression on AZ31B Mg alloy. Processing-grain size-texture maps were established as a function of temperature, strain rate, strain, and the Zener-Hollomon parameter (Z). Moreover, influence of simultaneous changes in the grain size and texture on tensile yield strength and ductility of the hot-worked Mg alloy was studied using the grain size and texture maps established. The processing-grain size map showed that the DRX grain size decreased with the increase in Z, also revealing various characteristics ranging from a grain growth, grain refinement, to a bimodal distribution of ultrafine grains and partially recrystallized grains. The effect of twinning on the grain refinement was also evident at high Z conditions. The processing-texture map revealed that the initial fiber texture was altered significantly to a shear, off-normal, or extension-twin texture with the increase in Z. The Schmid-factor maps were calculated to identify a dominant deformation mode during a subsequent tensile deformation of the hot-worked samples. Finally, a corresponding Hall-Petch relationship for each dominant deformation mode was used to establish tensile yield-strength maps, which agree well with the measured data.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)

Germanium–tin (GeSn) alloys are emerging as promising materials for mid-infrared optoelectronics and silicon-compatible photonic devices, owing to their tunable direct bandgap. However, the growth of high-quality GeSn films with high Sn content remains challenging due to strain-induced defect formation. In this study, we investigate the role of film thickness on strain-induced relaxation, defect density, and Sn segregation. A series of five samples with varying thicknesses and ∼15% Sn-containing GeSn layers were grown, ranging from the critical thickness for strain relaxation to the onset of Sn segregation. All GeSn samples were analyzed using X-ray diffraction reciprocal space mapping (XRD-RSM) to explore the evolution of strain-induced relaxation as a function of thickness. Photoluminescence measurements reveal that increasing the GeSn thickness enhances strain relaxation while reducing defect-related emission, indicating a decrease in effective defect density prior to reaching the threshold thickness of GeSn layer. At a thickness of ∼150 nm, the GeSn layer shows the onset of Sn segregation, evident in the XRD-RSM spectrum, marking the threshold thickness for Sn segregation. This work defines an effective growth window in terms of thickness (35 to 150 nm) for fabricating relaxed, defect-suppressed GeSn layers with 15% Sn content. These findings emphasize the crucial role of thickness control in balancing strain relaxation and defect suppression, advancing the fabrication of high-quality, high Sn-content relaxed GeSn using molecular beam epitaxy.

Defects↗
DOE OSTI2019

Characterization of Hot Workability of 5052 Aluminum Alloy Based on Activation Energy-Processing Map

In the design of hot forming processes for aluminum alloys, hot processing maps are usually used as a powerful tool for processing parameters optimizations. Although the stability of deformation is considered in conventional hot processing (CHP) maps, the difficulty of deformation, i.e., whether deformation is easy to occur, is not taken into account. Therefore, it is difficult for CHP maps to efficiently and accurately obtain the optimal processing parameters and achieve satisfying hot workability. Hence, in this study, thermal compression tests were performed to investigate the hot forming behavior of 5052 aluminum alloy in the deformation temperature range of 553-733 K and strain rate range of 0.001-1 s{sup −1}. We proposed an activation energy-processing (AEP) map by coupling the CHP map and the activation energy value, and thereby applied it to evaluate the hot workability of 5052 aluminum alloy. In CHP maps, the region with the highest power dissipation efficiency is generally considered to be the best processing region. However, the AEP map shows that materials with satisfying hot workability not only depends on high power dissipation efficiency, but also on low activation energy values. At the strain of 0.7, the optimal hot processing region predicted by the CHP map lies in the temperature range of 583-673 K and strain rate range of 0.001-0.1 s{sup −1}, but that predicted by AEP map locates in the temperature range of 643-733 K and strain rate range of 0.001-0.1 s{sup −1}. Microstructure characterization implies that the optimal processing region predicted by the CHP map presents necklace-like structures, which are non-uniform and unbeneficial for deformation, while that predicted by the AEP map consists of fine, uniform and equiaxed grains. Thus, it is implied that the processing regions predicted by the AEP map are more suitable for forming, i.e., the reasonability of the AEP map is verified.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In{sub 0.17}Al{sub 0.83}N–1.25 nm, GaN–1.5 nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10 }cm{sup −2} to 10{sup 8 }cm{sup −2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1995

Natural Strain

The purpose of this paper is to present a consistent and thorough development of the strain and strain-rate measures affiliated with Hencky. Natural measures for strain and strain-rate, as I refer to them, are first expressed in terms of of the fundamental body-metric tensors of Lodge. These strain and strain-rate measures are mixed tensor fields. They are mapped from the body to space in both the Eulerian and Lagrangian configurations, and then transformed from general to Cartesian fields. There they are compared with the various strain and strain-rate measures found in the literature. A simple Cartesian description for Hencky strain-rate in the Lagrangian state is obtained.

Freed, Alan D.↗
DOE OSTI2021

Residual strain-stress in manganese steel railway crossing determined by synchrotron and laboratory X-rays

The residual stress within the nose of a worn manganese steel railway crossing was investigated. The macroscopic residual stress at the running surface was determined in areas with and without visual faults by laboratory X-rays. To get information about the penetration depth of the residual stress, synchrotron X-ray diffraction was used to map the distribution of local (within grain) residual strains below the running surface. The laboratory X-ray measurements revealed significant compressive stress on the rail running surface. The synchrotron measurements documented that local strains exist through the entire depth investigated. Relations between residual stress, plastic deformation, and crack formation are analysed, leading to a discussion on potentials/limitations of the two experimental methods for investigations of residual stress in large engineering components.

differentia aperture synchrotron diffraction↗
DOE OSTI2023

Ion-beam radiation-induced Eshelby transformations: The mean and variance in hydrostatic and shear residual stresses

Ion beam plays a pivotal role in ion implantations and the fabrication of nanostructures. However, there lacks a quantitative model to describe the residual stresses associated with the ion-beam radiation. Radiation-induced residual stress/transformation strain have been mostly recognized in the hydrostatic sub strain space. Here, in this study, we use molecular dynamics (MD) simulations to show that the response of a material to irradiation is generally anisotropic that depends on the ion-beam direction, and should be described using tensorial quantities. We demonstrate that accelerator-based ion beam irradiation, combined with the intrinsic lattice anisotropy and externally induced anisotropy (such as anisotropic mechanical loadings), causes radiation-actuated shear transformation strains in addition to hydrostatic expansion. We map out these complex correlations for several materials. Radiation-induced defects are shown to be responsible for residual shear stresses in the manner of Eshelby inclusion transformation. We propose such tensorial response model should be considered for accurate nanoscale fabrication using ion-beam irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Automated identification of deformation twin systems in Mg WE43 from SEM DIC

In this study, the application of machine learning and computer vision approaches to microscale deformation data for the automated identification of deformation twinning systems, and their associated twin area, is introduced. Deformation data was obtained during in-situ SEM compression testing of a WE43 Mg alloy using digital image correlation (DIC) modified for use with electron microscopy. A 5.7 mm × 3.4 mm area of interest was analyzed, generating ~100 million data points of deformation. Experimental twin trace directions were determined by applying k-means clustering, morphological thinning, and Hough transforms to the deformation data. The identification of deformation twinning was achieved by consideration of the twin trace direction, its strain value, and its evolution. The deformation map was divided into areas corresponding to individual active twin systems, enabling the analysis of microstructure dependence of deformation behavior and twinning activity. The performance of the proposed twinning identification approach was evaluated by accuracy, precision, and sensitivity metrics. The effect of the tuning parameters used in the algorithm on the performance is also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effect of Al-mole fraction in Al{sub x}Ga{sub 1−x}N grown by MOCVD

AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The Al{sub x}Ga{sub 1−x}N layer composition was varied from 15% to 25%. The crystalline quality, thickness and aluminum (Al) composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The growth rate decreases on increasing Al composition. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by room temperature Photoluminescence (PL). The AlGaN peak shifts towards lower wavelength with Al composition. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be increased in AlGaN layers with composition.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Predictions of an alternative pathway for grain-boundary driven twinning

The exceptional strength of nanoscale metallic grains is due to strain-accommodation mechanisms that are uncommon in their coarse-grained counterparts, such as deformation twinning. Using an $ab initio$ density functional theory-phase field dislocation dynamics model, we provide evidence of an unconventional kinetic pathway for twin formation in nano-sized crystals involving two grain boundaries. It corresponds to greater favorability because it accommodates strain yet removes debilitating backstresses. A simple map is presented to relate the associated kinetics of nucleation and propagation to intrinsic material defect formation energies.

36 MATERIALS SCIENCE↗