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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Photophysical properties of zero-dimensional perovskites studied by PBE0 and GW+BSE methods

Due to the exceptional photophysical properties and great potential applications in solid state lighting, zero-dimensional halide perovskites with broadband emitting have recently attracted much attention. In this work, to reveal the origin of the broadband absorption and emission spectra of 0D (C 4 N 2 H 14 Br) 4 SnBr x I 6-x (x = 3), the ground state and exciton dynamics properties have been studied by hybrid PBE0 functional and the GW+BSE method. Different self-trapped excitons (STEs) are obtained, and their emission energies by PBE0 are consistent well with experimental data. By considering the vibrational broadening of emission, our calculated full width at half maximum of emission accords well with the experiment. The absorption of free exciton and STEs is also calculated by considering the quasiparticle and excitonic effect. Our results show that these light-induced trapped states can be observed by experiments, as confirmed in other similar systems by the femtosecond transient absorption spectra.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Spatially resolved multicolor CsPbX 3 nanowire heterojunctions via anion exchange

Significance Semiconductor heterojunction is a key building block in modern electronics and optoelectronics. The accurate control over the composition, band gap, energy level (band bending), and doping level is the foundation of ideal functional heterojunctions. We demonstrate highly spatially resolved heterojunctions in a type of semiconductor, halide perovskites, which show great potential in photovoltaic and solid-state lighting applications. We accomplish this through the combination of facile anion-exchange chemistry with nanofabrication techniques. The halide perovskite nanowire heterojunction provides an ideal platform for fundamental studies and technological applications. For example, multicolor lasers or LEDs could be made using such localized heterojunctions; quantitative interdiffusion and ion migration dynamics could be examined at elevated temperatures, etc.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

The 2019 materials by design roadmap

Advances in renewable and sustainable energy technologies critically depend on our ability to design and realize materials with optimal properties. Materials discovery and design efforts ideally involve close coupling between materials prediction, synthesis and characterization. Increased use of computational tools, the generation of materials databases, and advances in experimental methods have substantially accelerated these activities. It is therefore an opportune time to consider future prospects for materials by design approaches. The purpose of this roadmap is to present an overview of the current state of computational materials prediction, synthesis and characterization approaches, materials design needs for various technologies, and future challenges and opportunities that must be addressed. Perspectives cover topics on computational techniques, validation, materials databases, materials informatics, high-throughput combinatorial methods, advanced characterization approaches, and materials design issues in thermoelectrics, photovoltaics, solid state lighting, catalysts, batteries, metal alloys, complex oxides and transparent conducting materials. It is our hope that this roadmap will guide researchers and funding agencies in identifying new prospects for materials design.

36 MATERIALS SCIENCE↗
DOE OSTI2014

SSL and LED life prediction and assessment of CCT shift

Solid-state lighting (SSL) products can have a predicted life of 70% lumen output (L70) from 26,000 to 40,000 hours using the LM-80-08 testing standards. Chromaticity shift, correlated color temperature (CCT) and lumen maintenance (LM) will dramatically reduce the nominal life of SSL luminaires. In this work, an off-the-shelf luminaire from Philips (AmbientLED) has been aged in a standard wet hot temperature operating life (WHTOL) of 85% relative humidity and 85°C (85/85) in order to assess reliability of prolonged exposer in a harsh environment. Failure criterion has been derived using the Arrhenius equation from the LM-80-08 standard, as well as the 60W LED Lamp test report from an isothermal environment of 45°C. This is a similar luminaire to the test vehicle used in this research. Data characterization between the two data sets has been carried out to determine the luminaires reliability and life under the 85/85 test conditions. This characterization allows for the determination of poor quality luminaire products in the market place. The distribution properties of the shifting mean values of CCT and LM were incorporated into the Bayesian Linear Regression (BLR) to determine the degradation pattern, in order to predict the remaining useful life (RUL) of the system due to aging before the end-of-life (EoL).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Modeling the impact of thermal effects on luminous flux maintenance for SSL luminaires

Meeting the longevity requirements of solid-state lighting (SSL) devices places extreme demands on the materials and designs that are used in SSL luminaires. Therefore, understanding the aging characteristics of lens, reflectors, and other materials is essential to projecting the long-term performance of LED-based lighting systems. Overlooking these factors at either the design or product specification stage can result in premature failure of the device due to poor luminous flux maintenance and/or excessive chromaticity shifts. This paper describes a methodology for performing accelerated stress testing (AST) on materials intended for use in SSL luminaires. This test methodology, which consists of elevated temperature and humidity conditions, produces accelerated aging data that can be correlated to expected performance under normal luminaire operating conditions. The correlations can then be leveraged to produce models of the changes in the optical properties of key materials including transmittance versus wavelength of lenses and reflectance versus wavelength for housings and other reflectors. This information has been collected into a lumen maintenance decision support tool (LM-DST) and together with user supplied inputs (e.g., expected operation conditions) can provide guidance on lifetime expectations of SSL luminaires. This approach has been applied to a variety of materials commonly found in SSL luminaires including acrylics, polycarbonates, and silicones used for lenses and paints, coatings, films, and composites used for reflectors.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Differential Power Processing for DC Systems

This paper introduces an approach to dc power delivery that reduces power loss by minimizing redundant energy conversion. Existing power distribution techniques tend to increase the number of cascaded conversion stages, which limits overall efficiency. Differential power processing enables independent load regulation, while processing only a small portion of the total load power. Bulk power conversion occurs once. Load voltage domains are connected in series, and differential converters act as controllable current sources to regulate intermediate nodes. This enables independent, low supply voltages, which can reduce system energy consumption, especially in digital circuits and solid-state lighting. Since differential voltage regulators process a fraction of the load power, decreased size, cost, and conversion losses are attainable. Under balanced load conditions, secondary differential converters do not process any power. This paper analyzes several differential power delivery architectures that can be applied to homogenous and heterogeneous loads at various levels: chip, board, blade, etc. A variety of operating conditions for a test system with four series voltage domains are examined in simulation and verified with experimental hardware. Results in a reference application show a 7-8% decrease in input power and 6-7 percentage points increase in overall conversion efficiency as compared to a conventional cascaded approach.

Shenoy, PS↗
DOE OSTI2013

Insights into accelerated aging of SSL luminaires

Although solid-state lighting (SSL) products are often intended to have product lifetimes of 15 years or more, the rapid change in technology has created a need for accelerated life tests (ALTs) that can be performed in the span of several months. A critical element of interpreting results from any systems-level ALT is understanding of the impact of the test environment on each component. Because of its ubiquity in electronics, the use of temperature-humidity environments as potential ALTs for SSL luminaires was investigated. Results from testing of populations of three commercial 6” downlights in environments of 85oC and 85% relative humidity (RH) and 75oC and 75% RH are reported. These test environments were found to accelerate lumen depreciation of the entire luminaire optical system, including LEDs, lenses, and reflectors. The effects of aging were found to depend strongly on both the optical materials that were used and the design of the luminaire; this shows that the lumen maintenance behavior of SSL luminaires must be addressed at the optical systems level. Temperature-Humidity ALTs can be a useful test in understand lumainaire depreciation provided that proper consideration is given to the different aging rates of various materials. Since the impact of the temperature-humidity environment varies among components of the optical system, uniform aging of all system components in a single test is difficult to achieve.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2013

Prediction of L70 lumen maintenance and chromaticity for LEDs using extended Kalman filter models

Solid-state lighting (SSL) luminaires containing light emitting diodes (LEDs) have the potential of seeing excessive temperatures when being transported across country or being stored in non-climate controlled warehouses. They are also being used in outdoor applications in desert environments that see little or no humidity but will experience extremely high temperatures during the day. This makes it important to increase our understanding of what effects high temperature exposure for a prolonged period of time will have on the usability and survivability of these devices. Traditional light sources “burn out” at end-of-life. For an incandescent bulb, the lamp life is defined by B50 life. However, the LEDs have no filament to “burn”. The LEDs continually degrade and the light output decreases eventually below useful levels causing failure. Presently, the TM-21 test standard is used to predict the L70 life of LEDs from LM-80 test data. Several failure mechanisms may be active in a LED at a single time causing lumen depreciation. The underlying TM-21 Model may not capture the failure physics in presence of multiple failure mechanisms. Correlation of lumen maintenance with underlying physics of degradation at system-level is needed. In this paper, Kalman Filter (KF) and Extended Kalman Filters (EKF) have been used to develop a 70-percent Lumen Maintenance Life Prediction Model for LEDs used in SSL luminaires. Ten-thousand hour LM-80 test data for various LEDs have been used for model development. System state at each future time has been computed based on the state space at preceding time step, system dynamics matrix, control vector, control matrix, measurement matrix, measured vector, process noise and measurement noise. The future state of the lumen depreciation has been estimated based on a second order Kalman Filter model and a Bayesian Framework. The measured state variable has been related to the underlying damage using physics-based models. Life prediction of L70 life for the LEDs used in SSL luminaires from KF and EKF based models have been compared with the TM-21 model predictions and experimental data.

Lall, Pradeep↗
DOE OSTI2021

Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diverse chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N 2 , the number of predicted nitride compounds dwarfs the number that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Semiconductor nanocrystal quantum dot synthesis approaches towards large-scale industrial production for energy applications

This study reviews the experimental synthesis and engineering developments that focused on various green approaches and large-scale process production routes for quantum dots. Fundamental process engineering principles were illustrated. In relation to the small-scale hot injection method, our discussions focus on the non-injection route that could be scaled up with engineering stir-tank reactors. In addition, applications that demand to utilize quantum dots as "commodity" chemicals are discussed, including solar cells and solid-state lightings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm 2 . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

Ewing, Jacob J.↗
DOE OSTI2022

Materials research and development needs to enable efficient and electrified buildings

Because of the complexity of modern buildings—with many interconnected materials, components, and systems—fully electrifying buildings will require targeted R&D and efficient coordination across those material, component, and system levels. Because buildings that consume the smallest amount of energy are easier to electrify, energy efficiency is a crucial step toward fully electrified buildings. Materials advances will play an important role in both reducing the energy intensity of buildings and electrifying their remaining energy use. Materials are currently being explored, discovered, synthesized, evaluated, optimized, and implemented across many building components, including solid-state lighting; dynamic windows and opaque envelopes; cold climate heat pumps; thermal energy storage; heating, ventilating, and air conditioning (HVAC); refrigeration; non-vapor compression HVAC; and more. In this article, we review the current state-of-the-art of materials for various buildings end uses and discuss R&D challenges and opportunities for both efficiency and electrification.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2013

Recovery Act: Low-Cost, Highly Lambertian Reflector Composite For Improved LED Fixture Efficiency and Lifetime

The overall objective of the program was to demonstrate a 98% or greater reflective, highly diffuse, low-cost composite material that significantly improves luminaire efficiency, is able to withstand 50,000 hours or greater luminaire operation under expected LED system thermal and environmental operating extremes and meets the cost targets required to be an effective commercial solution for the Solid State Lighting industry. This project met most of the goals defined and contributed to the understanding of high reflectance, white coatings. Research under this program increased the understanding of coatings development using particle size reduction techniques and preparation of coating solutions with a broad range of particle types. The research explored scale-up of coating systems and generated understanding of processing required for high volume manufacturing applications. The work demonstrated how coating formulation and application technique can translate to material durability and LED system lifetime. The research also demonstrated improvements in lighting efficiency to be gained using high reflectance white coatings.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2013

Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency (Final Scientific/Technical Report)

The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm 2 using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance was analyzed and improvements implemented to the Veeco PVD-AlN prototype system to establish a specification and baseline PVD-AlN films on sapphire and in parallel the evaluation of PVD AlN on silicon substrates began. In Phase II of the project a Beta tool based on a scaled-up process module capable of depositing uniform films on batches of 4” or 6” diameter substrates in a production worthy operation was developed and qualified. In Phase III, the means to increase the throughput of the PVD-AlN sy0stem was evaluated and focused primarily on minimizing the impact of the substrate heating and cooling times that dominated the overall cycle time.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2013

Low-Cost Illumination-Grade LEDs

Solid State Lighting is a cost-effective, energy-conserving technology serving a rapidly expand- ing multi-billion dollar market. This program was designed to accelerate this lighting revolution by reducing the manufacturing cost of Illumination-Grade LEDs. The technical strategy was to investigate growth substrate alternatives to standard planar sapphire, select the most effective and compatible option, and demonstrate a significant increase in Lumen/$ with a marketable LED. The most obvious alternate substrate, silicon, was extensively studied in the first two years of the program. The superior thermal and mechanical properties of Si were expected to improve wavelength uniformity and hence color yield in the manufacture of high-power illumination- grade LEDs. However, improvements in efficiency and epitaxy uniformity on standard c-plane sapphire diminished the advantages of switching to Si. Furthermore, the cost of sapphire decreased significantly and the cost of processing Si devices using our thin film process was higher than expected. We concluded that GaN on Si was a viable technology but not a practical option for Philips Lumileds. Therefore in 2012 and 2013, we sought and received amendments which broadened the scope to include other substrates and extended the time of execution. Proprietary engineered substrates, off-axis (non-c-plane) sapphire, and c-plane patterned sapphire substrates (PSS) were all investigated in the final 18 months of this program. Excellent epitaxy quality was achieved on all three candidates; however we eliminated engineered substrates and non-c-plane sapphire because of their higher combined cost of substrate, device fabrication and packaging. Ultimately, by fabricating a flip-chip (FC) LED based upon c-plane PSS we attained a 42% reduction in LED manufacturing cost relative to our LUXEON Rebel product (Q1-2012). Combined with a flux gain from 85 to 102 Lm, the LUXEON Q delivered a 210% increase in Lm/$ over this time period. The technology was commercialized in our LUXEON Q product in Sept., 2013. Also, the retention of the sapphire increased the robustness of the device, enabling sales of low-cost submount-free chips to lighting manufacturers. Thus, blue LED die sales were initiated in the form of a PSS-FC in February, 2013.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2013

High Efficiency Integrated Package

Solid-state lighting based on LEDs has emerged as a superior alternative to inefficient conventional lighting, particularly incandescent. LED lighting can lead to 80 percent energy savings; can last 50,000 hours – 2-50 times longer than most bulbs; and contains no toxic lead or mercury. However, to enable mass adoption, particularly at the consumer level, the cost of LED luminaires must be reduced by an order of magnitude while achieving superior efficiency, light quality and lifetime. To become viable, energy-efficient replacement solutions must deliver system efficacies of ≥ 100 lumens per watt (LPW) with excellent color rendering (CRI > 85) at a cost that enables payback cycles of two years or less for commercial applications. This development will enable significant site energy savings as it targets commercial and retail lighting applications that are most sensitive to the lifetime operating costs with their extended operating hours per day. If costs are reduced substantially, dramatic energy savings can be realized by replacing incandescent lighting in the residential market as well. In light of these challenges, Cree proposed to develop a multi-chip integrated LED package with an output of > 1000 lumens of warm white light operating at an efficacy of at least 128 LPW with a CRI > 85. This product will serve as the light engine for replacement lamps and luminaires. At the end of the proposed program, this integrated package was to be used in a proof-of-concept lamp prototype to demonstrate the component’s viability in a common form factor. During this project Cree SBTC developed an efficient, compact warm-white LED package with an integrated remote color down-converter. Via a combination of intensive optical, electrical, and thermal optimization, a package design was obtained that met nearly all project goals. This package emitted 1295 lm under instant-on, room-temperature testing conditions, with an efficacy of 128.4 lm/W at a color temperature of ~2873K and 83 CRI. As such, the package’s performance exceeds DOE’s warm-white phosphor LED efficacy target for 2013. At the end of the program, we assembled an A19 sized demonstration bulb housing the integrated package which met Energy Star intensity variation requirements. With further development to reduce overall component cost, we anticipate that an integrated remote converter package such as developed during this program will find application in compact, high-efficacy LED-based lamps, particularly those requiring omnidirectional emission.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2014

LOW-COST LED LUMINAIRE FOR GENERAL ILLUMINATION

During this two-year Solid-State Lighting (SSL) Manufacturing R&D project Cree developed novel light emitting diode (LED) technologies contributing to a cost-optimized, efficient LED troffer luminaire platform emitting at ~3500K correlated color temperature (CCT) at a color rendering index (CRI) of >90. To successfully achieve program goals, Cree used a comprehensive approach to address cost reduction of the various optical, thermal and electrical subsystems in the luminaire without impacting performance. These developments built on Cree’s high- brightness, low-cost LED platforms to design a novel LED component architecture that will enable low-cost troffer luminaire designs with high total system efficacy. The project scope included cost reductions to nearly all major troffer subsystems as well as assembly costs. For example, no thermal management components were included in the troffer, owing to the optimized distribution of compact low- to mid-power LEDs. It is estimated that a significant manufacturing cost savings will result relative to Cree’s conventional troffers at the start of the project. A chief project accomplishment was the successful development of a new compact, high-efficacy LED component geometry with a broad far-field intensity distribution and even color point vs. emission angle. After further optimization and testing for production, the Cree XQ series of LEDs resulted. XQ LEDs are currently utilized in Cree’s AR series troffers, and they are being considered for use in other platforms. The XQ lens geometry influenced the independent development of Cree’s XB-E and XB-G high-voltage LEDs, which also have a broad intensity distribution at high efficacy, and are finding wide implementation in Cree’s omnidirectional A-lamps.

Lowes, Ted↗
DOE OSTI2015

Quantitative Electron Nanodiffraction.

This Final report summarizes progress under this award for the final reporting period 2002 - 2013 in our development of quantitive electron nanodiffraction to materials problems, especially devoted to atomistic processes in semiconductors and electronic oxides such as the new artificial oxide multilayers, where our microdiffraction is complemented with energy-loss spectroscopy (ELNES) and aberration-corrected STEM imaging (9). The method has also been used to map out the chemical bonds in the important GaN semiconductor (1) used for solid state lighting, and to understand the effects of stacking sequence variations and interfaces in digital oxide superlattices (8). Other projects include the development of a laser-beam Zernike phase plate for cryo-electron microscopy (5) (based on the Kapitza-Dirac effect), work on reconstruction of molecular images using the scattering from many identical molecules lying in random orientations (4), a review article on space-group determination for the International Tables on Crystallography (10), the observation of energy-loss spectra with millivolt energy resolution and sub-nanometer spatial resolution from individual point defects in an alkali halide, a review article for the Centenary of X-ray Diffration (17) and the development of a new method of electron-beam lithography (12). We briefly summarize here the work on GaN, on oxide superlattice ELNES, and on lithography by STEM.

36 MATERIALS SCIENCE↗