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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

An overview of the first results on the solar array materials passive LDEF experiment (sample), A0171

Power degradation in the solar cells was consistent with the exposure environment and appears to be produced principally by the radiation and atomic oxygen environments. Atomic oxygen erosion was generally as expected; atomic oxygen effects dominated for the most part in materials that were both atomic oxygen and ultraviolet vulnerable. Silicone coatings appear to protect Kapton, and adhesive systems contained under photon opaque materials were surprisingly environmentally resistant. A high density of small micro-meteroid/space debris impacts were observed on mirrors, protective coatings, paints, and composites. New synergistic effects of the space environment were noted in the interaction of atomic oxygen and copious amounts of contamination and in the induced luminescence of many materials.

Ann F Whitaker↗
NASA NTRS2001

Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications

Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.

Jhabvala, Murzy↗
DOE OSTI2023

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electro-optic transduction in silicon via gigahertz-frequency nanomechanics

Interfacing electronics with optical fiber networks is key to the long-distance transfer of classical and quantum information. Piezo-optomechanical transducers enable such interfaces by using gigahertz-frequency acoustic vibrations as mediators for converting microwave photons to optical photons via the combination of optomechanical and piezoelectric interactions. However, despite successful demonstrations, efficient quantum transduction remains out of reach due to the challenges associated with hybrid material integration and increased loss from piezoelectric materials when operating in the quantum regime. Here, we demonstrate an alternative approach in which we actuate 5-GHz phonons in a conventional silicon-on-insulator platform. In our experiment, microwave photons resonantly drive a phononic crystal oscillator via the electrostatic force realized in a charge-biased narrow-gap capacitor. The mechanical vibrations are subsequently transferred via a phonon waveguide to an optomechanical cavity, where they transform into optical photons in the sideband of a pump laser field. Operating at room temperature and atmospheric pressure, we measure a microwave-to-optical photon conversion efficiency of 1.72±0.14×10 −7 in a 3.3 MHz bandwidth. Our results mark a stepping stone towards quantum transduction with integrated devices made from crystalline silicon, which promise efficient high-bandwidth operation and integration with superconducting qubits. Additionally, the lack of need for piezoelectricity or other intrinsic nonlinearities makes our approach applicable to a wide range of materials for potential applications beyond quantum technologies.

42 ENGINEERING↗
DOE OSTI2020

Design of a multichannel photonic crystal dielectric laser accelerator

To be useful for most scientific and medical applications, compact particle accelerators will require much higher average current than enabled by current architectures. For this purpose, we propose a photonic crystal architecture for a dielectric laser accelerator, referred to as a multi-input multi-output silicon accelerator (MIMOSA), that enables simultaneous acceleration of multiple electron beams, increasing the total electron throughput by at least 1 order of magnitude. To achieve this, we show that the photonic crystal must support a mode at the Γ point in reciprocal space, with a normalized frequency equal to the normalized speed of the phase-matched electron. We show that the figure of merit of the MIMOSA can be inferred from the eigenmodes of the corresponding infinitely periodic structure, which provides a powerful approach to design such devices. Additionally, we extend the MIMOSA architecture to electron deflectors and other electron manipulation functionalities. These additional functionalities, combined with the increased electron throughput of these devices, permit all-optical on-chip manipulation of electron beams in a fully integrated architecture compatible with current fabrication technologies, which opens the way to unconventional electron beam shaping, imaging, and radiation generation.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

In situ cryogenic characterization of proton damage in thick p-channel skipper CCDs

Skipper charge-coupled devices (CCDs) are an offshoot of standard silicon pixel detectors and are capable of performing repeated non-destructive charge measurements, enabling deeply sub-electron readout noise. This capability has opened the door to single-photon counting from the near-infrared ($\sim$1.1 $μ$m) to the soft X-ray (several keV), making these devices strong candidates for future astronomical instruments operating in the photon-starved limit. Furthermore, the p-channel architecture used to fabricate Skipper CCDs on n-type silicon has been demonstrated to have an increased hardness to the intense radiation environment of space. Building upon previous irradiation campaigns on room-temperature sensors, here we describe the first radiation-hardness tests of p-channel skipper CCDs at their cryogenic operating temperatures. We assess the performance of the floating-gate output stage and global CCD parameters (charge transfer inefficiency, dark current, hot pixels, and charge traps). We find that these devices maintain excellent performance after displacement damage doses equivalent to ${\sim}$10 years at the Earth/Sun L2 Lagrange point, demonstrating for the first time that these sensors remain radiation-hard in realistic deep-space thermal and radiation environments.

Roach, Brandon M. [Chicago U., KICP] (ORCID:000000↗
NASA NTRS1987

Radiation characteristics of low resistivity float zone silicon solar cells

The effects of 1-MeV electron irradiation on silicon solar cells with AM0 efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. These cells do not demonstrate post-electron-irradiation photon decay as has been described for cells processed on 1-10 ohm-cm FZ silicon.

Crotty, G. T.↗
DOE OSTI2022

Silicon Photomultipliers Coupled to Scintillators With the Emission Maximum at 550 nm

A majority of the silicon photomultipliers (SiPMs) are sensitive to blue and near-ultraviolet (NUV) photons that are not optimized for scintillators with the emission maximum at wavelengths longer than 500 nm. The red–green–blue (RGB) SiPM is developed for the maximum photon detection efficiency (PDE) at 550 nm, which is a good match for some high-light-yield scintillators, such as CsI:Tl (CsI) and Gd 1.5 Y 1.5 Ga 2 Al 3 O 12 :Ce (GYGAG). Comparisons are made for the performance of these scintillators coupled to the RGB SiPM and a blue-sensitive SiPM. Because it takes tens of nanoseconds for the microcells to recharge after registering a photon hit, the linearity of these scintillation detectors was studied for high-energy gammas where numerous scintillation photons are generated. In addition, the energy resolution of the 662-keV gamma emitted by 137 Cs was measured for temperatures between –20 °C and 50 °C. The nonlinearity was observed above 1 MeV for all measurements, and however, it can be corrected by energy calibration using a third-degree polynomial. For CsI, the energy resolution is better with the blue-sensitive SiPM because of the lower dark count rate (DCR). In contrast, GYGAG coupled to the RGB SiPM has a better energy resolution for temperatures below 30 °C because of the well-matched emission spectrum and PDE distribution. Nevertheless, the advantage disappears for temperatures above 30 °C due to the higher DCR. It would be useful to further develop the RGB SiPM with a lower DCR and higher operating temperatures.

42 ENGINEERING↗
DOE OSTI2023

Photon-to-Digital Converters for Neutron Imaging Instruments (Final Report)

Oak Ridge National Laboratory (ORNL) collaborated with the Université de Sherbrooke (UdeS) to design a modular and scalable tile of innovative digital photodetectors called Photon-to-Digital Converters (PDC) and the required subsystems to demonstrate the feasibility of large area single-photon detectors to support high-resolution, depth-of-interaction, fast neutron radiography based on scintillation detectors. The goal is to demonstrate the advantages of using PDC over conventional Silicon Photomultiplier (SiPM) for neutron imaging systems. The basic building blocks of analog SiPM and PDC are Single-Photon Avalanche Photodiodes (SPAD). The main difference between conventional SiPMs and PDCs, is in the fact that analog SiPMs sum the charge produced by individual SPAD passively, while in PDCs each SPAD is read out individually by an active electronic circuit. Hence, PDCs provide a direct photon-to-bit conversion where a logic “1” means that there was a detection in a given SPAD. Conversely, an analog SiPM requires a sophisticated preamplifier (current amplifiers or transimpedance amplifier) followed by a shaping amplifier and an analog-to-digital converter. Moreover, since the charge from each SPAD varies slightly, the passive sum of the analog SiPM will have signal fluctuations for the same amount of photon detected. This is one of many issues that is completely eliminated by individual one-to-one SPAD read out in PDCs. The large area required for scintillator readouts for neutron imaging is such that the output capacitance of a large area of SiPM arrays is very high. This creates a burden on the signal-to-noise optimization with respect to the power budget. For PDC, the power consumption is dictated by rate of the incident photon flux, or in photon-starved environments, the dark noise rate of the SPAD array. In other words, the power consumption in the absence of events is extremely low. Hence, the power consumption of a PDC read out system is much lower than its analog counterpart. Further, the large SiPM capacitance may introduce signal distortions on the scintillator fast rise or decay time with undesired effects on timing and pulse shape discrimination. The problem is absent in PDCs, as their readout is independent on device capacitance. UdeS is the world leader in 3D vertical integration of frontside illuminated SPAD arrays over CMOS readouts. These capabilities allow future production of “3D PDC” with maximum photosensitive fill factor and electronic functionalities tailored to the application. UdeS' vast knowledge of SPADs and CMOS design made the team an ideal collaborator in the development of large area high-resolution fast neutron radiography.

42 ENGINEERING↗
DOE OSTI2020

Hot-Carrier Transfer at Photocatalytic Silicon/Platinum Interfaces

Interfacial charge transfer from silicon to heterogeneous catalysts plays a key role in silicon-based photoelectrochemical systems. In general, prior to interfacial charge transfer, carriers that are generated by photons with energies above the bandgap dissipate the excess kinetic energy via hot-carrier cooling, and such energy loss limits the maximum power conversion efficiency. The excess energy of hot-carriers, however, could be utilized through hot-carrier transfer from silicon to the catalysts, but such hot-carrier extraction has not yet been demonstrated. In this work, we exploit transient reflection spectroscopy to interrogate charge transfer at the interface between silicon and platinum. Additionally, quantitative modeling of the surface carrier kinetics indicates that the velocity of charge transfer from silicon to platinum exceeds 2.6 x 10 7 cm s -1 , corresponding to an average carrier temperature of extracted carriers of ~600 K, two times higher than the lattice temperature. The charge transfer velocity can be controllably reduced by inserting silica spacing layers between silicon and platinum.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Silicon carbide is a promising host material for spin-defect-based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near-telecom photoemission, high spin number, and nearly temperature-independent ground-state zero-field splitting. We report the realization of nanotesla shot-noise-limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieve a sensitivity of 50 nT/√Hz and a theoretical shot-noise-limited sensitivity of 3.5 nT/√Hz. This is accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Ionizing photon interactions modulate the optical properties of crystals with femtosecond scale temporal resolution

In this work, we continue our study of a new method for the detection of ionizing radiation with the potential for a dramatic improvement in coincidence time resolution (CTR) for time-of-flight positron emission tomography (ToF-PET) using the modulation of a material's optical properties instead of the scintillation mechanism. Our previous work has shown that for non-scintillation materials such as bismuth silicon oxide (BSO) and cadmium telluride (CdTe), their refractive index can be modulated by annihilation photon interactions. Additionally, the ultrafast nature of this process however remains unexplored. The ionizing radiation-induced charge carriers alter the local band structure in these materials, thus changing the complex refractive index. This mechanism is routinely used at the linac coherent light source (LCLS) facility of the SLAC National Accelerator Laboratory to measure x-ray pulse arrival times with femtosecond scale resolution for photon energies between 0.5 and 10 keV. The method described here follows that example by using a frequency chirped visible continuum pulse to provide a monotonic wavelength-to-time mapping by which one can measure the time-dependent refractive index modulation. In addition, we describe an interference-based measurement setup that allows for significantly improved sensitivity while preserving a timing precision of approximately 10 fs (σ) when measuring the arrival time of below 10 keV x-ray pulses with yttrium aluminum garnet (YAG) crystal. The method is presented in the context of ToF-PET application with further discussions on the potential CTR achievable if a similar detection concept is adopted for detecting 511 keV photons. Semi-empirical analysis indicates that the predicted CTR achievable is on the order of 1 ps (FWHM).

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

Vacuum deposition of χ(2) nonlinear organic single crystal films on silicon

Integrating second order nonlinear (χ(2)) optical materials on chip is an ongoing challenge for Si photonics. Noncentrosymmetric molecular crystals have the potential to deliver high χ(2) nonlinearity with good thermal stability, but so far have been limited to growth from solution or the melt, which are both difficult to control and scale up in manufacturing. Here, we show that large (>100 μm) single crystal domains of the nonlinear molecule 2-[3-(4-hydroxystyryl)-5,5-dimethylcyclohex-2-enylidene] malononitrile (OH1) can be grown monolithically on either glass or Si via vacuum evaporation, followed by a short thermal annealing step. The crystallites are tens of nanometer thick and exhibit strong second harmonic generation with their primary χ(2) tensor component lying predominantly in plane. Remarkably, we find that a single domain can grow uninterrupted through nearby channels etched on a Si wafer, which may provide a path to integrate OH1 on Si or Si3N4 waveguides for a broad range of χ(2)-based photonic integrated circuit functionality.

Physics↗
DOE OSTI2021

Arrays of Si vacancies in 4 H -SiC produced by focused Li ion beam implantation

Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place these defects at the optimal location in a host material with nano-scale accuracy is desirable for integration of these quantum systems with traditional electronic and photonic structures. Here, we demonstrate the precise spatial patterning of arrays of silicon vacancy (${V}_{Si}$) emitters in an epitaxial 4H -SiC (0001) layer through mask-less focused ion beam implantation of Li + . We characterize these arrays with high-resolution scanning confocal fluorescence microscopy on the Si-face, observing sharp emission lines primarily coming from the ${V1}^{{\prime}}$ zero-phonon line (ZPL). The implantation dose is varied over 3 orders of magnitude, leading to ${V}_{Si}$ densities from a few per implantation spot to thousands per spot, with a linear dependence between ZPL emission and implantation dose. Optically-detected magnetic resonance (ODMR) is also performed, confirming the presence of V2 ${V}_{Si}$. Our investigation reveals scalable and reproducible defect generation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The Heavy Photon Search (HPS) Software Environment

The Heavy Photon Search (HPS) is an experiment at the Thomas Jefferson National Accelerator Facility (JLab) designed to search for a hidden sector photon (A’) in fixed-target electro-production. It uses a silicon microstrip tracking and vertexing detector placed inside a dipole magnet to measure charged particle trajectories and a fast lead-tungstate crystal calorimeter located just downstream of the magnet to provide a trigger and to identify electromagnetic showers. The HPS experiment uses both invariant mass and secondary vertex signatures to search for the A’. The experimental collaboration is small and quite heterogeneous: it is composed of members of the nuclear physics as well as particle physics communities, from universities and national labs from around the US and Europe. Enabling such a disparate group to concentrate on the physics aspects of the experiment required that the software be easy to install and use, and having such limited manpower meant that existing solutions had to be exploited. HPS has successfully completed two engineering runs and completed its first physics run in the summer of 2019. We begin with an overview of the physics goals of the experiment followed by a short description of the detector design. We then describe the software tools used to design the detector layout and simulate the expected detector performance. Event reconstruction involving track, cluster and vertex finding and fitting for both simulated and real data was, to first order, adopted from existing software originally developed for Linear Collider studies. Bringing it all together into a cohesive whole involved the use of multiple software solutions with common interfaces.

Graf, Norman↗
DOE OSTI2025

Formation and optical properties of indium nanoparticle arrays for deep-UV plasmonics

We utilize a combined computational-experimental approach to examine the influence of indium nanoparticle (NP) array distributions on deep-ultraviolet (UV) plasmon resonances. For photon energies < 5.7 eV, analysis of ellipsometric spectra reveals an increase in silicon reflectance induced by indium NP arrays on silicon. For various energies in the range 5.7–7.0 eV, a decrease in reflectance is induced by the NP arrays. Similar trends in reflectance are predicted from finite-difference time-domain (FDTD) simulations using NP size distributions extracted from atomic-force micrographs as input. In addition, in the energy range of 7.4–9.2 eV, the FDTD simulations reveal reflectance minima, characteristic of localized surface plasmon resonances. Here, electron energy-loss spectroscopy collected from individual indium NPs reveals the presence of LSPR at ≈ 8 eV, further supporting the promise of indium NP arrays on silicon for deep-UV plasmonics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Solar reflection of dark matter with dark-photon mediators

Abstract We consider the scattering of low-mass halo dark-matter particles in the hot plasma of the Sun, focusing on dark matter that interact with ordinary matter through a dark-photon mediator. The resulting “solar-reflected” dark matter (SRDM) component contains high-velocity particles, which significantly extend the sensitivity of terrestrial direct-detection experiments to sub-MeV dark-matter masses. We use a detailed Monte Carlo simulation to model the propagation and scattering of dark-matter particles in the Sun, including thermal effects, with special emphasis on ultralight dark-photon mediators. We study the properties of the SRDM flux, obtain exclusion limits from various direct-detection experiments, and provide projections for future experiments, focusing especially on those with silicon and xenon targets. We find that proposed future experiments with xenon and silicon targets can probe the entire “freeze-in benchmark”, in which dark matter is coupled to an ultralight dark photon, including dark-matter masses as low as 𝒪(keV). Our simulations and SRDM fluxes are publicly available.

Astronomy & Astrophysics↗
DOE OSTI2020

Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors

A 0.93 g 1×1×0.4 cm 3 SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. In this work, the detector’s response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping, and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713±0.093%) or cause impact ionization (1.576±0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of ±140 V.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗