Dark Matter Detection with Bound Nuclear Targets: The Poisson Phonon Tail
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72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
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A cryogenically cooled, multidetector spectrometer for infrared astronomy
A liquid helium-cooled, 24 detector grating spectrometer was developed and used for low resolution astronomical observations in the 5 to 14 micron spectral range. The instrument operated on the 91 cm Kuiper Airborne Observatory, the 3 m IRTF (Mauna Kea), the 3 m Shane telescope Observatory, the 3 m Shane telescope (Lick Observatory), and the 152 cm NASA and University of Arizona telescope. The detectors are discrete Si:Bi photoconductors with individual metal oxide semiconductor field effect transistor preamplifiers operating at 4 K. The system uses a liquid helium-cooled slit, order-sorter filter, collimator mirror, grating, and camera mirror arranged in a Czerny-Turner configuration with a cold stop added between the collimator mirror and the grating. The distances between components are chosen so that the collimator mirror images the secondary mirror of the telescope onto the cold stop, thus providing a very effective baffle. Scattered radiation is effectively reduced by using liquid helium-cooled, black baffles to divide the spectrometer into three separate compartments. The system noise-equivalent flux density, when used on the 152 cm telescope from 8 to 13 microns with a resolving power of 50, is 4.4 x 10 to the minus 17th power W/sq cm micron square root of Hz. The main applications are for measuring continuum radiation levels and solid state emission and absorption features in regions of star and planet formation.
Witteborn, F. C.↗
A cryogenically cooled, multidetector spectrometer for infrared astronomy
A liquid helium-cooled, 24 detector grating spectrometer was developed and used for low resolution astronomical observations in the 5 to 14 micron spectral range. The instrument operated on the 91 cm Kuiper Airborne Observatory, the 3 m IRTF (Mauna Kea), the 3 m Shane telescope (Lick Observatory), and the 152 cm NASA and University of Arizona telescope. The detectors are discrete Si:Bi photoconductors with individual metal oxide semiconductor field effect transistor preamplifiers operating at 4 K. The system uses a liquid helium-cooled slit, order-sorter filter, collimator mirror, grating, and camera mirror arranged in a Czerny-Turner configuration with a cold stop added between the collimator mirror and the grating. The distances between components are chosen so that the collimator mirror images the secondary mirror of the telescope onto the cold stop, thus providing a very effective baffle. Scattered radiation is effectively reduced by using liquid helium-cooled, black baffles to divide the spectrometer into three separate compartments. The system noise-equivalent flux density, when used on the 152 cm telescope from 8 to 13 microns with a resolving power of 50, is 4.4 x 10 to the minus 17th power W/sq cm micron square root of Hz. The main applications are for measuring continuum radiation levels and solid state emission and absorption features in regions of star and planet formation.
Witteborn, F. C.↗
A survey and analysis of experimental hydrogen sensors
In order to ascertain the applicability of hydrogen sensors to aerospace applications, a survey was conducted of promising experimental point-contact hydrogen sensors and their operation was analyzed. The techniques discussed are metal-oxide-semiconductor or MOS based sensors, catalytic resistor sensors, acoustic wave detectors, and pyroelectric detectors. All of these sensors depend on the interaction of hydrogen with Pd or a Pd-alloy. It is concluded that no single technique will meet the needs of aerospace applications but a combination of approaches is necessary. The most promising combination is an MOS based sensor with a catalytic resistor.
Hunter, Gary W.↗
Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP
Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further complications due to the creation of defects and short life of the device or to introduce high content of indium, which again is found problematic due to the difficulties in diluting nitrogen in the presence of high indium [9]. An availability of material of proper band gap and lattice matching on InP are important issues for the development of TPV devices to perform better. To address those issues, recently we have shown that by adjusting the thickness of individual sublayers and the nitrogen composition, strain balanced GaAs(1-x)N(x)/InAs(1-y)N(y) superlattice can be designed to be both lattice matched to InP and have an effective bandgap in the desirable 0.4- 0.7eV range [10,11]. Theoretically the already reduced band gap of GaAs(1-x)N(x), due to the nitrogen effects, can be further reduced by subjecting it to a biaxial tensile strain, for example, by fabricating pseudomorphically strained layers on commonly available InP substrates. While such an approach in principle could allow access to smaller band gap (longer wavelength), only a few atomic monolayers of the material can be grown due to the large lattice mismatch between GaAs(1-x)N(x) and InP (approx.3.8-4.8 % for x<0.05, 300K). This limitation can be avoided using the principle of strain balancing [12], by introducing the alternating layers of InAs(1-y)N(y) with opposite strain (approx.2.4-3.1% for x<0.05, 300K) in combination with GaAs(1-x)N(x). Therefore, even an infinite pseudomorphically strained superlattice thickness can be realized from a sequence of GaAs(1-x)N(x) and InAs(1-y)N(y) layers if the thickness of each layer is kept below the threshold for its lattice relaxation
Bhusal, L.↗
A Highly Sensitive Multi-Element HgCdTe E-APD Detector for IPDA Lidar Applications
An HgCdTe electron avalanche photodiode (e-APD) detector has been developed for lidar receivers, one application of which is integrated path differential absorption lidar measurements of such atmospheric trace gases as CO2 and CH4. The HgCdTe APD has a wide, visible to mid-wave-infrared, spectral response, high dynamic range, substantially improved sensitivity, and an expected improvement in operational lifetime. A demonstration sensor-chip assembly consisting of a 4.3 lm cutoff HgCdTe 4 9 4 APD detector array with 80 micrometer pitch pixels and a custom complementary metal-oxide-semiconductor readout integrated circuit was developed. For one typical array the APD gain was 654 at 12 V with corresponding gain normalized dark currents ranging from 1.2 fA to 3.2 fA. The 4 9 4 detector system was characterized at 77 K with a 1.55 micrometer wavelength, 1 microsecond wide, laser pulse. The measured unit gain detector photon conversion efficiency was 91.1%. At 11 V bias the mean measured APD gain at 77 K was 307.8 with sigma/mean uniformity of 1.23%. The average, noise-bandwidth normalized, system noise-equivalent power (NEP) was 1.04 fW/Hz(exp 1/2) with a sigma/mean of 3.8%. The measured, electronics-limited, bandwidth of 6.8 MHz was more than adequate for 1 microsecond pulse detection. The system had an NEP (3 MHz) of 0.4 fW/Hz(exp 1/2) at 12 V APD bias and a linear dynamic range close to 1000. A gain-independent quantum-limited SNR of 80% of full theoretical was indicative of a gain-independent excess noise factor very close to 1.0 and the expected APD mode quantum efficiency.
NEP↗
Miniature Trace Gas Detector Based on Microfabricated Optical Resonators
While a variety of techniques exist to monitor trace gases, methods relying on absorption of laser light are the most commonly used in terrestrial applications. Cavity-enhanced absorption techniques typically use high-reflectivity mirrors to form a resonant cavity, inside of which a sample gas can be analyzed. The effective absorption length is augmented by the cavity's high quality factor, or Q, because the light reflects many times between the mirrors. The sensitivity of such mirror-based sensors scales with size, generally making them somewhat bulky in volume. Also, specialized coatings for the high-reflectivity mirrors have limited bandwidth (typically just a few nanometers), and the delicate mirror surfaces can easily be degraded by dust or chemical films. As a highly sensitive and compact alternative, JPL is developing a novel trace gas sensor based on a monolithic optical resonator structure that has been modified such that a gas sample can be directly injected into the cavity. This device concept combines ultra-high Q optical whispering gallery mode resonators (WGMR) with microfabrication technology used in the semiconductor industry. For direct access to the optical mode inside a resonator, material can be precisely milled from its perimeter, creating an open gap within the WGMR. Within this open notch, the full optical mode of the resonator can be accessed. While this modification may limit the obtainable Q, calculations show that the reduction is not significant enough to outweigh its utility for trace gas detection. The notch can be milled from the high- Q crystalline WGMR with a focused ion beam (FIB) instrument with resolution much finer than an optical wavelength, thereby minimizing scattering losses and preserving the optical quality. Initial experimental demonstrations have shown that these opened cavities still support high-Q whispering gallery modes. This technology could provide ultrasensitive detection of a variety of molecular species in an extremely compact and robust package. With this type of modified WGMR, one can inject a gas sample into the open gap, allowing highly sensitive trace molecule detection within a roughly 1-cm volume. Other critical components of the instrument, such as the detector and a semiconductor laser, could be directly packaged with the resonator so as to not significantly increase the size of the device. Besides its low mass, volume, and power consumption, the monolithic design makes these resonators intrinsically robust devices, capable of handling significant temperature excursions, without moving parts to wear out or delicate coatings that can be easily damaged. A sensor could integrate with microfluidics technology for a chip-scale device. It could be mounted to the end of a deployable arm, or inserted into a borehole. Also, a network of individual sensors could be dispersed to monitor conditions over a wide region
Aveline, David C.↗
Design and Performance of a Miniature Lidar Wind Profiler (MLWP)
The directional velocity of the wind is one of the most critical components for understanding meteorological and other dynamic atmospheric processes. Altitude-resolved wind velocity measurements, also known as wind profiles or soundings, are especially necessary for providing data for meteorological forecasting and overall global circulation models (GCM's). Wind profiler data are also critical in identifying possible dangerous weather conditions for aviation. Furthermore, a system has yet to be developed for wind profiling from the surface of Mars which could also meet the stringent requirements on size, weight, and power of such a mission. Obviously, a novel wind profiling approach based on small and efficient technology is required to meet these needs. A lidar system based on small and highly efficient semiconductor lasers is now feasible due to recent developments in the laser and detector technologies. The recent development of high detection efficiency (50%), silicon-based photon-counting detectors when combined with high laser pulse repetition rates and long receiver integration times has allowed these transmitter energies to be reduced to the order of microjoules per pulse. Aerosol lidar systems using this technique have been demonstrated for both Q-switched, diode-pumped solid-state laser transmitters (lambda = 523 nm) and semiconductor diode lasers (lambda = 830 nm); however, a wind profiling lidar based on this technique has yet to be developed. We will present an investigation of a semiconductor-laser-based lidar system which uses the "edge-filter" direct detection technique to infer Doppler frequency shifts of signals backscattered from aerosols in the planetary boundary layer (PBL). Our investigation will incorporate a novel semiconductor laser design which mitigates the deleterious effects of frequency chirp in pulsed diode lasers, a problem which has limited their use in such systems in the past. Our miniature lidar could be used on a future Mars lander and perhaps find its own niche in terrestrial applications due to its potential low cost an small size.
Cornwell, Donald M., Jr.↗
Physical Properties of Candidate X-ray Detector Material Rb 4 Ag 2 BiBr 9
Recently, metal halide perovskites have emerged as promising semiconductor candidates for sensitive X-ray photon detection due to their suitable band gap energies, excellent charge transport properties, and low material cost afforded by their low-temperature solution-processing preparation. Furthermore, we report an improved methodology for single crystal growth and thermal and electrical properties of a two-dimensional (2D) layered halide material Rb 4 Ag 2 BiBr 9 , which has been identified as a potential candidate for X-ray radiation detection applications. The measured heat capacity for Rb 4 Ag 2 BiBr 9 implies that there are no structural phase transitions upon cooling. Temperature dependence of thermal transport measurements further suggests remarkably low thermal conductivities of Rb 4 Ag 2 BiBr 9 that are comparable to the lowest reported in literature. The bulk crystal resistivity is determined to be 2.59 × 10 9 Ω·cm from the current–voltage (I–V) curve. Density of trap states is estimated to be ~10 10 cm –3 using the space-charge-limited-current measurements. The fabricated Rb 4 Ag 2 BiBr 9 -based X-ray detector shows good operational stability with no apparent current drift, which may be ascribed to the 2D crystal structure of Rb 4 Ag 2 BiBr 9 . Finally, by varying the X-ray tube current to change the corresponding dose rate, the Rb4Ag2BiBr9 X-ray detector sensitivity is determined to be 222.03 μC Gy –1 cm –2 (at an electric field of E = 24 V/mm).
36 MATERIALS SCIENCE↗
An Acoustic Charge Transport Imager for High Definition Television
This project, over its term, included funding to a variety of companies and organizations. In addition to Georgia Tech these included Florida Atlantic University with Dr. William E. Glenn as the P.I., Kodak with Mr. Mike Richardson as the P.I. and M.I.T./Polaroid with Dr. Richard Solomon as the P.I. The focus of the work conducted by these organizations was the development of camera hardware for High Definition Television (HDTV). The focus of the research at Georgia Tech was the development of new semiconductor technology to achieve a next generation solid state imager chip that would operate at a high frame rate (I 70 frames per second), operate at low light levels (via the use of avalanche photodiodes as the detector element) and contain 2 million pixels. The actual cost required to create this new semiconductor technology was probably at least 5 or 6 times the investment made under this program and hence we fell short of achieving this rather grand goal. We did, however, produce a number of spin-off technologies as a result of our efforts. These include, among others, improved avalanche photodiode structures, significant advancement of the state of understanding of ZnO/GaAs structures and significant contributions to the analysis of general GaAs semiconductor devices and the design of Surface Acoustic Wave resonator filters for wireless communication. More of these will be described in the report. The work conducted at the partner sites resulted in the development of 4 prototype HDTV cameras. The HDTV camera developed by Kodak uses the Kodak KAI-2091M high- definition monochrome image sensor. This progressively-scanned charge-coupled device (CCD) can operate at video frame rates and has 9 gm square pixels. The photosensitive area has a 16:9 aspect ratio and is consistent with the "Common Image Format" (CIF). It features an active image area of 1928 horizontal by 1084 vertical pixels and has a 55% fill factor. The camera is designed to operate in continuous mode with an output data rate of 5MHz, which gives a maximum frame rate of 4 frames per second. The MIT/Polaroid group developed two cameras under this program. The cameras have effectively four times the current video spatial resolution and at 60 frames per second are double the normal video frame rate.
Hunt, William D.↗
Compact Full-Field Ion Detector System for CubeSat Science Beyond LEO
NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop a Compact Full-Field Ion Detector System (CFIDS). The CFIDS is designed to be an extremely compact, low cost instrument, capable of being flown on a wide variety of deep space platforms, to provide comprehensive (composition, velocity, and direction) in situ measurements of heavy ions in space plasma environments with higher fidelity, than previously available.
Extraterrestrial Radiation↗
Slicing Newton spheres with a two-camera 3D imaging system
We demonstrate a simple approach to achieve three-dimensional ion momentum imaging. The method employs two complementary metal–oxide–semiconductor cameras in addition to a standard microchannel plates/phosphor screen imaging detector. The two cameras are timed to measure the decay of luminescence excited by ion hits to extract the time of flight. The achieved time resolution is better than 10 ns, which is mainly limited by camera jitters. A better than 5 ns resolution can be achieved when the jitter is suppressed.
Chemistry↗
Purification and Crystal Growth of Lead Iodide by Physical Vapor Transport Method
Lead iodide (PbI2) is a layered compound semiconductor being developed as room temperature x- and gamma-ray detector. Compared to the more studied material, mercuric iodide, PbI2 has a higher melting temperature and no phase transition until liquid phase which are indications of better mechanical properties. In this study, the source material was purified by the zone-refining process, and the purest section was extracted from center of the the zone-refined ingot to be grown by physical vapor transport (PVT) method. The zone-refined material and as-grown crystals were characterized by optical microscopy and differential scanning calorimetry (DSC) to reveal the surface morphology, purity and stoichiometry. The results shows that both materials are near-stoichiometric composition, with the purity of the as-grown crystals higher than zone-refined materials. The resistivity of the as-grown crystal (10" Omega-cm) was derived from current-voltage (I-V) measurement, and is 10 times higher than the zone-refined materials. Detail results will be presented and discussed.
Wright, G. W.↗
Tunable-Quantum-Well Infrared Detector
Proposed detector of infrared photons based on photon-assisted, resonant quantum-mechanical tunneling between adjacent energy wells in its semiconductor structure. Wavelength adjusted by changing applied voltage. Device contains alternating layers of different seminconductors which form double-quantum-well electron-energy structure. Tunable-quantum-well detectors made on single chip constitutes line imager. Many such devices stacked to form two-dimensional imaging device. Signal-processing circuitry integrated into chip at its lower end. Potential barriers and wells produced by alternating layers of different semiconductor materials. Steepness of slope proportional to applied electric field. Electric field and thicknesses and heights of barriers selected to favor photon-assisted, resonant quantum-mechanical tunneling at chosen photon frequency.
Maserjian, Joseph↗
Synthesis of CdZnTeSe single crystals for room temperature radiation detector fabrication: mitigation of hole trapping effects using a convolutional neural network
In this article, we report the growth of Cd 0.9 Zn 0.1 Te 0.97 Se 0.03 (CZTS) wide bandgap semiconductor single crystals for room temperature gamma-ray detection using a modified vertical Bridgman method. Charge transport properties measured in the radiation detectors, fabricated from the grown CZTS crystals, indicated signs of hole trapping. Hole traps inhibit high-resolution radiation detection especially for energetic gamma rays. Machine learning (ML) applications are gaining tremendous mpetus in improving device and sensor performance by compensating for limi tations arising from such intrinsic material properties. In this article, we describe a deep convolutional neural network (CNN) that has demonstrated remarkable efficiency in identifying the energy of a gamma photon detected by a CZTS detector. The CNN has been trained using simulated data that resemble output pulses from actual CZTS detectors when exposed to 662-keV gamma photons. The device properties required for the simulation have been derived from radiation detection measurements on a real Cd 0.9 Zn 0.1 Te 0.97 Se 0.03 detector fabricated in our laboratory. The CNN has been trained with detector pulses arising through photoelectric (PE) and Compton scattering (CS) separately. The percentage error in predicting the detected energies, within an extremely small duration of 0.28 ms, was found to be lower than 0.1% for gamma energies above 50 keV and for training datasets con taining PE and CS events separately. The CNN was also validated for a mixed PE and CS dataset to obtain a prediction error of 1%. Additionally, the effect of detector resolution on the efficiency of the CNN was also explored.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy
Hexagonal BN (h-BN) has emerged as an important ultrawide bandgap (UWBG) semiconductor (Eg~6 eV). The crystal growth technologies for producing semi-bulk crystals/epilayers in large wafer sizes and understanding of defect properties lag decades behind conventional III-nitride wide bandgap (WBG) semiconductors. Here we report probing of boron vacancy (VB)-related defects in freestanding h-BN semi-bulk wafers synthesized by hydride vapor phase epitaxy (HVPE). A photocurrent excitation spectroscopy (PES) was designed to monitor the transport of photoexcited holes from deep-level acceptors. A dominant transition line at 1.66 eV with a side band near 1.62 eV has been directly observed, which matches well with the calculated energy levels of 1.65 for the VB-H deep acceptor in h-BN. The identification of VB complexes via PES measurement was further corroborated by the temperature-dependent dark resistivity and secondary ion mass spectrometry measurements. The results presented here suggested that it is necessary to focus on the optimization of V/III ratio during HVPE growth to minimize the generation of VB-related defects and to improve the overall material quality of h-BN semi-bulk crystals. The work also provided a better understanding of how VB complexes behave and affect the electronic and optical properties of h-BN.
36 MATERIALS SCIENCE↗
Coloring Tetrahedral Semiconductors: Synthesis and Photoluminescence Enhancement of Ternary II-III 2 -VI 4 Colloidal Nanocrystals
Ternary tetrahedral II-III 2 -VI 4 semiconductors, where II is Zn or Cd, III In or Ga, and VI S, Se, or Te, are of interest in UV radiation detectors in medicine and space physics as well as CO 2 photoreduction under visible light. We synthesize colloidal II-III 2 -VI 4 semiconductor nanocrystals from readily available precursors and ascertain their ternary nature by structural and spectroscopic methods, including 77 Se solid-state NMR spectroscopy. The pyramidally shaped nanocrystals range between 2 and 12 nm and exhibit optical gaps of 2–3.9 eV. In the presence of excess anions on the particle surface, treatment with Lewis acidic, Z-type ligands results in better passivation and enhanced photoluminescence. Electronic structure calculations reveal the most stable, lowest energy polymorphs and coloring patterns. This work will pave the way toward more environmentally friendly, ternary semiconductors for optoelectronics and electrocatalysis.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗