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At least 325 records · Page 18

Tests of the Rockwell Si:As Back-Illuminated Blocked-Impurity Band (BIBIB) detectors

Two arrays of Rockwell's Si:As back-illuminated blocked-impurity-band detectors were tested at the Max-Planck-Institute for Astronomy (MPIA) at low background and low temperature for possible use in the astronomical space experiment ISOPHOT. For these measurements special test equipment was put together. A cryostat was mechanically modified to accommodate the arrays and special peripheral electronics was added to a microprocessor system to drive the cold multiplexer and to acquire the output data. The first device, a 16x50 element array on a fan-out board was used to test individual pixels with a trans-impedance-amplifier at a photon background of 10(exp 8) Ph s(-1)cm(-2) and at temperatures of 2.7 to 4.4 K. The noise-equivalent-power NEP is in the range 5 - 7 x 10(exp -18) WHz(exp -1/2), the responsivity is less than or equal to 100 AW(exp -1)(f = 10 Hz). The second device was a 10x50 array including a cold readout electronics of switched FETs (SWIFET). Measurements of this array were done in a background range of 5 x 10(exp 5) to 5 x 10(exp 11) Ph s(exp-1)cm(exp-2) and at operating temperatures between 3.0 and 4.8 K. The NEP ranges from less than 10(exp -18) at the lowest background to 2 x 10(exp -16) WHz(exp -1/2) at the highest flux.

Wolf, J.↗

A 58 x 62 pixel Si:Ga array camera for 5 - 14 micron astronomical imaging

A new infrared array camera system has been successfully applied to high background 5 - 14 micron astronomical imaging photometry observations, using a hybrid 58 x 62 pixel Si:Ga array detector. The off-axis reflective optical design incorporating a parabolic camera mirror, circular variable filter wheel, and cold aperture stop produces diffraction-limited images with negligible spatial distortion and minimum thermal background loading. The camera electronic system architecture is divided into three subsystems: (1) high-speed analog front end, including 2-channel preamp module, array address timing generator, bias power suppies, (2) two 16 bit, 3 microsec per conversion A/D converters interfaced to an arithmetic array processor, and (3) an LSI 11/73 camera control and data analysis computer. The background-limited observational noise performance of the camera at the NASA/IRTF telescope is NEFD (1 sigma) = 0.05 Jy/pixel min exp 1/2.

Gezari, D. Y.↗

Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy

Planar oxide-maskless growth of GaAs was demonstrated by transient-mode liquid phase epitaxy (TMLPE) on GaAs-coated Si substrates that were prepared by migration-enhanced molecular beam epitaxy (MEMBE). In TMLPE, the cool substrate was brought into contact with hot melts for a short time. A GaAs layer as thick as 30 microns was grown in 10 sec. The etch pits observed in TMLPE-grown layers became longer in one direction and decreased in density with increasing the TMLPE epilayer thickness. The density of etch pits in a 20 micron-thick layer was approximately 5 x 10 the 6th/sq cm. Strong bandgap emission elliptically polarized with a major axis perpendicular to the surface was observed at about 910 nm, while deep-level emission from the TMLPE/MEMBE GaAs interface was detected at 980 nm. The photoluminescence intensity divided by the carrier concentration of the TMLPE-grown layer was about 270 times larger than that of the MEMBE-grown layer used as a substrate.

Nakamura, Shuji↗

SC- and SI-associated ULF and HF-Doppler oscillations during the great magnetic storm of February 1986

Results are presented of an investigation of SC- and SI-associated ULF and HF-Doppler pulsations observed during the great geomagnetic storm of February 1986, which began with a sudden commmencement on February 6 at about 13:12 UT, developed slowly over the next two days, and, after a rapid intensification late on February 8, reached a minimum. It is shown that these ULF and geomagnetic pulsations can be explained by the dynamo-motor mechanism of ionospheric electric fields and by global compressional oscillations in the magnetosphere and ionosphere, respectively.

Yumoto, K.↗

Intersubband infrared absorption in Ge(x)Si(1-x)/Si superlattice by photocurrent measurement

The intersubband IR absorption of holes in a Ge(x)Si(1-x)/Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first of the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.

Karunasiri, R. P. G.↗

Surface entropy of liquids via a direct Monte Carlo approach - Application to liquid Si

Two methods are presented for a direct Monte Carlo evaluation of the surface entropy S(s) of a liquid interacting by specified, volume-independent potentials. The first method is based on an application of the approach of Ferrenberg and Swendsen (1988, 1989) to Monte Carlo simulations at two different temperatures; it gives much more reliable results for S(s) in liquid Si than previous calculations based on numerical differentiation. The second method expresses the surface entropy directly as a canonical average at fixed temperature.

Wang, Z. Q.↗

Relationships between SC- and SI-associated ULF waves and ionospheric HF Doppler oscillations during the great geomagnetic storm of February 1986

The SC- and SI-associated ionospheric Doppler velocity oscillations and geomagnetic pulsations during the great geomagnetic storm of February 1986 are interpreted. This is done by considering the 'dynamo-motor' mechanism of ionospheric E-field and the global compressional oscillations of the magnetosphere and the ionosphere, respectively.

Yumoto, K.↗

Hyperfine magnetic field on Cd-111 in Heusler alloys Co2MnZ (Z = Si, Ga, Ge, Sn)

The time differential perturbed angular correlation method has been used to measure, as a function of temperature, the hyperfine magnetic field at Cd sites in the Heusler alloys Co2MnZ (Z = Si, Ga, Ge, Sn). The hyperfine fields, normalized to the total magnetic moment per formula unit, show an approximately linear trend toward more positive values with increasing lattice parameter.

Jha, S.↗

The very high rotators in the late-B and early-A stars: Shell stars with Si IV and C IV features the case of HD 119921

Study of several stars in the late B and early A spectral types shows that very high rotators are associated with shell characteristics (sometimes not detected at all in the visible spectra) and also with C IV and some Si IV spectral absorption features which can be explained by circumstellar phenomena superimposed over stellar metallic blends. These particularities are evidenced by comparison with other spectra of low and high rotators in the same spectral range. HD 119921, a star with similar characteristics to the other ones of the sample, is given special attention. A possible scenario is suggested to explain the observed superionization features.

Freireferrero, R.↗

Tunnel junctions for InP-on-Si solar cells

Growing, by metalorganic chemical vapor deposition, a tunnel junction is described, which makes possible and ohmic back contact in an n-on-p InP solar cell on a silicon substrate. The junction between heavily doped layers of p-type InGaAs and n-type InP shows resistance low enough not to affect the performance of these cells. InP solar cells made on n-type Si substrates with this structure were measured with an efficiency of 9.9 percent. Controls using p-type GaAs substrates showed no significant difference in cell performance, indicating that the resistance associated with the tunnel junction is less than about 0.1 ohm/sq cm.

Keavney, C.↗

Relative populations of excited levels within the ground configuration of Si-like Cu, Zn, Ge and Se ions

Populations of 3p2 1D2, 3P1, 3P2 levels in Si-like Cu, Zn, Ge, and Se ions have been deduced from the measurements of absolute intensities of magnetic dipole transitions within the 3s2 3p2 ground configuration. The measured population ratios are compared with theoretical calculations based on the distorted-wave approximation for the electron collisions and a semiclassical approximation for the proton collisions. The observed deviation from the statistical distribution for the excited-level populations within the ground configuration along the silicon isoelectronic sequence is in agreement with theoretical prediction.

Datla, R. U.↗

Status of the NOAO evaluation of the Hughes 20x64 Si:As impurity band conduction array

The Hughes 20 x 64 Si:As impurity band conduction arrays designed for ground-based and spaceborne astronomy observations is described together with experiments performed at NOAO to test these arrays. Special attention is given to the design and the characteristics of the test system and to the test methods. The initial tests on two columns of one array indicate that the array is easy to operate and performed satisfactorily.

Fowler, A. M.↗

Thermoelectric properties of pressure-sintered Si(0.8)Ge(0.2) thermoelectric alloys

The thermoelectric properties of 28 sintered Si(0.8)Ge(0.2) alloys, heavily doped with either B or P and prepared from powders with median particle sizes ranging from about 1 to over 100 microns, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size; however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes et al. (1964) on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.

Vining, Cronin B.↗

Calculations of hadronic dissociation of Si-28 projectiles at 14.6A GeV by nucleon emission

An optical potential abrasion-ablation collision model is used to calculate hadronic dissociation cross sections for one, two, and three nucleon removal for the first time for a 14.6A GeV Si-28 beam fragmenting in aluminum, tin, and lead targets. These estimates are compared with recent semiinclusive measurements. Significant differences between some calculated and measured semiinclusive cross sections exist which cannot be resolved without measurements of the exclusive channel hadronic cross sections. Calculations for each exclusive reaction channel contributing to the semiinclusive cross sections are presented and discussed.

Townsend, Lawrence W.↗

A non-local thermodynamic equilibrium, line-blanketed synthetic spectrum of Iota Herculis - C, Al, and Si lines

A non-LTE line-blanketed model stellar atmosphere is used to compute a model of I Herculis (B3 IV) with a Teff of 17,500 K and a log g of 3.75, following the conclusions of Peters and Polidan (1985). Detailed profiles of a number of lines of C, Al, and Si in the 1200-2000-A region are computed, including the resonance lines of C II, Al II, and Al III. These profiles are compared to observations obtained from the coaddition of eight IUE SWP images, using a technique developed by Leckrone and Adelman (1989). Comparison of carbon lines with a model that is underabundant in carbon by a factor of 2 relative to the sun indicates that the C abundance of Iota Her is at most one-half solar. Non-LTE effects are examined by comparing an LTE model possessing identical atmospheric parameters with the non-LTE model. Substantial differences in the populations of the model atomic states are found, but differences in the temperature structure of the two models often mask the non-LTE effects in the synthetic spectra.

Grigsby, James A.↗

Si II emission line diagnostics

The present study compares ratios of Si II UV emission lines in a variety of objects with computations based on recently published collisional data of Dufton and Kingston (1991). A high-quality spectrum of Alpha Tau (K5 III) obtained by Carpenter et al. (1991) is analyzed using the G270M mode of the GHRS on the HST, in addition to high-dispersion data from Skylab and IUE. Agreement between observation and theory is satisfactory for most lines. A blend with a line of Ni II accounts partially for the discrepancies and solves a problem with semiforbidden S II emission measures. Disagreement exists between certain observed flux ratios and computed values using recent atomic data for the intersystem lines. The discrepancy is most significant for Alpha Tau. The computed atomic collision strengths within the intersystem multiplet itself are argued as a possible cause of the discrepancy.

Judge, P. G.↗

Containerless processing and rapid solidification of Nb-Si alloys in the niobium-rich eutectic range

Containerless processing and rapid solidification techniques were used to process Nb-Si alloys in the Nb-rich eutectic range. Electromagnetically levitated drops were melted and subsequently splat-quenched from different temperatures. A variety of eutectic morphologies was obtained as a function of the degree of superheating or undercooling of the drops prior to splatting. Metallic glass was observed only in drops quenched from above the melting temperature. Microstructures of splats deeply undercooled prior to quenching were very fine and uniform. These results are discussed in terms of classic nucleation theory concepts and the expected heat evolution at different regions of the splat during the rapid quenching process. The locations of the coupled-zone boundaries for the alpha-Nb + Nb3Si eutectic are also suggested.

Hofmeister, W. H.↗

All-electron molecular Dirac-Hartree-Fock calculations - Properties of the XH4 and XH2 molecules and the reaction energy XH4 yields XH2 + H2, X = Si, Ge, Sn, Pb

Relativistic corrections to a number of properties of the Group IV hydrides are calculated using the Dirac-Hartree-Fock method. The use of first-order perturbation theory is sufficient to obtain relativistic corrections for Ge, but the effects of spin-orbit interaction and other higher-order effects begin to show for Sn and become important for Pb. The energy of the reaction XH4 yields XH2 + H2 (X = Si, Ge, Sn, and Pb) is also calculated. The results are compared with relativistic effective core potential calculations, first-order perturbation theory calculations, and limited experimental data.

Dyall, Kenneth G.↗