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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Solar cell is fabricated on commerical sheet-steel substrate passivated with tungsten layer. Layer prevents constituents of steel from interacting with semiconductor materials in MOS thin-film solar cell. Thin plating of nickel on steel improves bonding of tungsten. Use of steel as substrate reduces materials cost of solar cell construction.
A method of growing a ribbon crystal is described wherein a meniscus of molten semiconductor material attached to vertical movable seed is lifted at a rate substantially equal to the rate at which the meniscus freezes. The method is characterized by the steps of continuously sensing the brightness of the growth region of the ribbon in selected areas across the ribbon width for detecting changes in the intensity of the brightness of the selected areas, and modifying the temperature of the meniscus and pulling speed in response to changes detected in the intensity for controlling the geometry of the ribbon.
The reduction of the equivalent noise temperature in liquid-nitrogen-cooled submillimeter-wave mixers by the use of Schottky barriers on InSb instead of GaAs is evaluated by an analytical model that assumes limited local oscillator power and matched impedances. The calculations, executed at 1.0 and 1.8 THz, take plasma resonance and skin effect into account. For single and multiple contacts on homogeneous semiconductor materials of optimum doping, the noise of InSb diodes is smaller than that of GaAs diodes by a factor of 3 to 14. A simplified model is used to predict the performance of epitaxial structures as well as alternative materials.
The III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.
The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.
Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.
New cathode has form of hollow tube through which gas enters region of high electron density, produced by electric discharge with auxiliary electrode referred to as "keeper." Ion-gun cathode emits electrons that bombard gas in chamber. Ions accelerated out of source are used to dope semiconductor material.
Photovoltaic development projects applicable to space power are identified. When appropriate, the type of NASA support that would be necessary to implement these technologies for space use is indicated. It is conducted that the relatively small market and divergent operational requirements for space power are mainly responsible for the limited transfer of terrestrial technology to space applications. Information on the factors which control the cost and type of technology is provided. Terrestrial modules using semiconductor materials are investigated.
Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.
An apparatus for converting a radiant energy image into corresponding electrical signals including an image converter is described. The image converter includes a substrate of semiconductor material, an insulating layer on the front surface of the substrate, and an electrical contact on the back surface of the substrate. A first series of parallel transparent conductive stripes is on the insulating layer with a processing circuit connected to each of the conductive stripes for detecting the modulated voltages generated thereon. In a first embodiment of the invention, a modulated light stripe perpendicular to the conductive stripes scans the image converter. In a second embodiment a second insulating layer is deposited over the conductive stripes and a second series of parallel transparent conductive stripes perpendicular to the first series is on the second insulating layer. A different frequency current signal is applied to each of the second series of conductive stripes and a modulated image is applied to the image converter.
A liquid drop held captive between parallel disks that are differentially rotated is a model for the swirling flows induced by crystal rotation in the floating-zone process for growing semiconductor materials. An asymptotic analysis for a cylindrical drop is presented that elucidates the structure of the axisymmetric cellular motions caused by disk rotation at low Reynolds number. Variations of meniscus shape induced by these flows are described in the limit of small capillary number. Most cellular flow fields break the bifurcation point that corresponds to the Plateau-Rayleigh limit for the length of a static drop into two disjoint shape families and lower the maximum stable drop length. This effect is studied by a singular bifurcation analysis.
Grain boundaries in polycrystalline semiconductor material are frequently idealized as surfaces possessing a characteristic surface recombination velocity. Minority carrier densities generated by external sources (electron beams, light, etc.) in polycrystalline p-n junctions must satisfy certain boundary conditions at these grain boundaries which will be derived. It will also be shown that a 'folding technique' introduced recently to deal with this problem is of limited value.
Abstracts of reports are given which were presented at the Second All Union Seminar on Hydromechanics and Heat-Mass Transfer in Weightlessness. Topics inlcude: (1) features of crystallization of semiconductor materials under conditions of microacceleration; (2) experimental results of crystallization of solid solutions of CDTE-HGTE under conditions of weightlessness; (3) impurities in crystals cultivated under conditions of weightlessness; and (4) a numerical investigation of the distribution of impurities during guided crystallization of a melt.
Ionized Cluster Beam (ICB) deposition, a new technique originated by Takagi of Kyoto University in Japan, offers a number of unique capabilities for thin film metallization as well as for deposition of active semiconductor materials. ICB allows average energy per deposited atom to be controlled and involves impact kinetics which result in high diffusion energies of atoms on the growth surface. To a greater degree than in other techniques, ICB involves quantitative process parameters which can be utilized to strongly control the characteristics of films being deposited. In the ICB deposition process, material to be deposited is vaporized into a vacuum chamber from a confinement crucible at high temperature. Crucible nozzle configuration and operating temperature are such that emerging vapor undergoes supercondensation following adiabatic expansion through the nozzle.
The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.
Application of 3-kG magnetic field reduces thermal and solutal convection in Bi/MnBi melt in Bridgman-Stockbarger (moving-vertical-thermalgradient) furnace operating in normal gravitational field. Resulting Bi/MnBi alloy samples had properties similar to samples grown under nearly zero gravity. New technique proves useful in growing more uniform, defect-free semiconductor materials from such other electrically conductive melts.
Abstracts of reports are given which were presented at the Second All Union Seminar on Hydromechanics and Heat-Mass Transfer in Weightlessness. Topics include: (1) features of crystallization of semiconductor materials under conditions of microacceleration; (2) experimental results of crystallization of solid solutions of CDTE-HGTE under conditions of weightlessness; (3) impurities in crystals cultivated under conditions of weightlessness; and (4) a numerical investigation of the distribution of impurities during guided crystallization of a melt.
Very high performance is being developed in compound semiconductor transistors. High frequency and low noise figure operation in the GaAs FET have already been established. Substantially more performance increases are expected. A comparison of compound semiconductor materials, and their alloys, the physical concepts of high average electron velocity, and the special benefits of modulation doped heterojunction FET devices is presented.