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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Nanoprecipitates to Enhance Radiation Tolerance in High-Entropy Alloys

The growth of advanced energy technologies for power generation is enabled by the design, development, and integration of structural materials that can withstand extreme environments, such as high temperatures, radiation damage, and corrosion. High-entropy alloys (HEAs) are a class of structural materials in which suitable chemical elements in four or more numbers are mixed to typically produce single-phase concentrated solid solution alloys (CSAs). Many of these alloys exhibit good radiation tolerance like limited void swelling and hardening up to relatively medium radiation doses (tens of displacements per atom (dpa)); however, at higher radiation damage levels (>50 dpa), some HEAs suffer from considerable void swelling limiting their near-term acceptance for advanced nuclear reactor concepts. In this study, we developed a HEA containing a high density of Cu-rich nanoprecipitates distributed in the HEA matrix. The Cu-added HEA, NiCoFeCrCu 0.12 , shows excellent void swelling resistance and negligible radiation-induced hardening upon irradiation up to high radiation doses (i.e., higher than 100 dpa). The void swelling resistance of the alloy is measured to be significantly better than NiCoFeCr CSA and austenitic stainless steels. Density functional theory simulations predict lower vacancy and interstitial formation energies at the coherent interfaces between Cu-rich nanoprecipitates and the HEA matrix. The alloy maintained a high sink strength achieved via nanoprecipitates and the coherent interface with the matrix at a high radiation dose (~50 dpa). From our experiments and simulations, the effective recombination of radiation-produced vacancies and interstitials at the coherent interfaces of the nanoprecipitates is suggested to be the critical mechanism responsible for the radiation tolerance of the alloy. Furthermore, the materials design strategy based on incorporating a high density of interfaces can be applied to high-entropy alloy systems to improve their radiation tolerance.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Slip conditions with wall catalysis and radiation for multicomponent, nonequilibrium gas flow

The slip conditions for a multicomponent mixture with diffusion, wall-catalyzed atom recombination and thermal radiation are derived, and simplified expressions for engineering applications are presented. The gas mixture may be in chemical nonequilibrium with finite-rate catalytic recombination occurring on the wall. These boundary conditions, which are used for rarefied flow regime flow field calculations, are shown to be necessary for accurate predictions of skin friction and heat transfer coefficients in the rarefied portion of the space shuttle trajectory.

Hendricks, W. L.↗
NASA NTRS1978

Temperature and ionization balance dependence of O VII line ratios

The forbidden-plus-intersystem to resonance line ratio (G) for the heliumlike ion O VII is calculated, taking into account cascades, blended satellite lines, and radiative plus dielectric recombination. It is noted that G is of particular use for investigating radiative-transfer effects and nonequilibrium ionization in the solar corona and that the calculations are applicable to a low-density optically thin Maxwellian plasma. The temperature dependence of G is considered for the case of a steady-state equilibrium plasma, and the effect of departures from ionization equilibrium on G is examined. It is found that G is quite insensitive to temperature over the range from 600,000 to 6 million K for a steady-state plasma, but that recombinations may be suppressed or dominant, depending on the relative abundance of O VIII, for a plasma in which the state of ionization is not in equilibrium with the electron temperature. This latter effect is shown to be capable of causing large variations in G that are dependent on electron temperature.

Acton, L. W.↗
DOE OSTI2021

Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 μs, which shows promise for detector applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2002

The EUV Helium Spectrum in the Quiet Sun: A By-Product of Coronal Emission?

In this paper we test one of the mechanisms proposed to explain the intensities and other observed properties of the solar helium spectrum, and in particular of its Extreme-Ultraviolet (EUV) resonance lines. The so-called Photoionisation-Recombination (P-R) mechanism involves photoionisation of helium atoms and ions by EUV coronal radiation, followed by recombination cascades. We present calibrated measurements of EUV flux obtained with the two CDS spectrometers on board SOHO, in quiescent solar regions. We were able to obtain an essentially complete estimate of the total photoionizing flux in the wavelength range below 504 A (the photoionisation threshold for He(I)), as well as simultaneous measurements with the same instruments of the intensities of the strongest EUV helium lines: He(II) lambda304, He(I) lambda584, and He(I) lambda537. We find that there are not enough EUV photons to account for the observed helium line intensities. More specifically, we conclude that He(II) intensities cannot be explained by the P-R mechanism. Our results, however, leave open the possibility that the He(I) spectrum could be formed by the P-R mechanism, with the He(II) lambda304 line as a significant photoionizating source.

Andretta, Vincenzo↗
NASA NTRS1977

The influence of autoionization accompanied by excitation on the dielectronic recombination and the ionization equilibrium of silicon ions

The dielectronic recombination rate coefficients have been calculated for the various ionization stages of silicon. Account has been taken of all stabilizing radiative transitions and all autoionization processes which involve a single-electron electric-dipole transition of the recombining ion core. For certain ions the dielectronic recombination rates, although still larger than the direct radiative recombination rates, are found to be substantially reduced when account is taken of the effects of a previously neglected autoionization process in which the excited recombining ion core undergoes a delta n = 0 transition to a lower excited state. The temperatures at which these ions have their maximum abundance in corona equilibrium are significantly reduced when use is made of the new dielectronic recombination rates. Calculations are also presented for the total rates of radiative energy loss from isothermal steady-state plasmas due to the line and continuum emission of silicon ions.

Jacobs, V. L.↗
DOE OSTI2020

Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells

Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocations and V-defects does not play a decisive role in the overall nonradiative recombination and internal quantum efficiency of polar InGaN/GaN QWs.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Infrared spectra of IC 418 and NGC 6572

Spectrophotometric observations from 2 to 4 and 8 to 13 microns of NGC 6572 and from 4 to 13 microns of IC 418 are reported. Also reported are observations of the size of IC 418 in the optical and at 1.65 and 2.2 microns. Both planetary nebulae emit more radiation than expected from recombination at wavelengths longer than -4 microns; this radiation is attributed to heated dust. The spectra show a plateau from 10.5 to 13 microns, and this peak is tentatively attributed to emission from large silicon carbide particles. Fine-structure emission lines are also discussed; the presence of (forbidden Ar III) but not (forbidden Ne II) in NGC 6572 suggests that ions having the same ionization potential can nevertheless have different fractional abundances.

Willner, S. P.↗
DOE OSTI2020

Carbon nanotube (CNT) metal composites exhibit greatly reduced radiation damage

Radiation damage of structural materials leads to mechanical property degradation, eventually inducing failure. Secondary-phase dispersoids or other radiation defect sinks are often added to materials to boost their radiation resistance. We demonstrate that a metal composite made by adding 1D carbon nanotubes (CNTs) to aluminum (Al) exhibits superior radiation resistance. In situ ion irradiation with transmission electron microscopy (TEM) and atomistic simulations together reveal the mechanisms of rapid defect migration to CNTs, facilitating defect recombination and enhancing radiation tolerance. The origin of this effect is an evolving stress gradient in the Al matrix resulting from CNT transformation under irradiation, and the stability of resulting carbides. Extreme value statistics of large defect behavior in our simulations highlight the role of CNTs in reducing accumulated damage. Furthermore, this approach to controlling defect migration represents a promising opportunity to enhance the radiation resistance of nuclear materials without detrimental effects.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Increased light-emission efficiency in disordered (In, Ga)N through the correlated reduction of recombination rates

Experiments have shown that the light-emission efficiency of indium gallium nitride (InGaN) lightemitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium incorporation suppress diffusion of carriers to non-radiative centers, thus leading to defect-insensitive emission. However, recent experiments have challenged this hypothesis by revealing unexpectedly long diffusion lengths at room temperature. Here, we demonstrate an alternative mechanism involving the correlated reduction in radiative and nonradiative recombination rates that explains the increase in light-emission efficiency of InGaN with increasing indium concentration, without invoking the suppression of carrier diffusion. Furthermore, our analysis challenges the notion that carrier localization gives rise to defect tolerance in InGaN.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs

Here, we study the impact of deep-level defects on trap-assisted Auger–Meitner recombination in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) method and deep-level optical spectroscopy (DLOS). Carrier dynamics information, including carrier lifetime, recombination rate, and carrier density, is obtained from SSEL, while DLOS is used to obtain the deep-level defect density. Through fitting the nonradiative recombination rates of wafers with different deep-level defect densities, we obtain the Shockley–Read–Hall (SRH) and trap-assisted Auger–Meitner recombination (TAAR) coefficients. We show that defect-related nonradiative recombination, including both SRH and TAAR, accounts for a relatively small fraction of the total nonradiative recombination, which is dominated by intrinsic Auger–Meitner recombination. The interplay between carrier localization and Coulomb enhancement has a different impact on radiative and intrinsic Auger–Meitner recombination. Evidence is presented that the imbalance between the change of radiative and intrinsic Auger–Meitner recombination is the primary cause of the efficiency droop at high carrier densities in the samples studied.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Unusually Strong Near‐Infrared Photoluminescence of Highly Transparent Bulk InSe Flakes

Abstract Bulk γ‐InSe has a direct bandgap of 1.24 eV, which corresponds to near infrared wavelengths ( λ = 1.0 µm) useful in optoelectronic applications from biometric detectors to silicon photonics. However, its potential for optoelectronic applications is largely untapped due in part to the lack of quantitative studies of its optical properties. Here, the unusually low absorptance and high photoluminescence quantum efficiency of single‐crystalline InSe flakes with thickness in the hundreds of nanometers are studied. InSe emits brightly at room temperature from its direct bandgap with a peak photoluminescence quantum yield (PLQY) of 20%, despite displaying indirect bandgap like low absorption coefficient due to the symmetry of its crystal structure. By performing pump‐dependent PLQY measurements, the radiative and nonradiative recombination coefficients are extracted, including the Shockley‐Read‐Hall and Auger coefficients. Finally, a proof‐of‐concept alternating current electroluminescent device at low temperature is demonstrated to show the promise of InSe in optoelectronic technology such as highly transparent, bright NIR light sources.

Geng, Jamie↗
DOE OSTI2024

Can Third-Body Stabilization of Bimolecular Collision Complexes in Cold Molecular Clouds Happen?

For more than half a century, networks of radiative association, dissociative recombination, and bimolecular reactions have been postulated to drive the low-temperature chemistry of cold molecular clouds. Third-body stabilizations of collision complexes have been assumed to be 'irrelevant' due to short lifetime of such complexes. Here, we conduct crossed molecular beam studies of ground state atomic silicon with diacetylene in combination with electronic structure calculations and microcanonical kinetics models operating under cold molecular cloud conditions. Our combined experimental, electronic structure, and microcanonical kinetics modelling investigations provide compelling evidence that three-body collisions of molecular hydrogen with long-lived reaction intermediates accessed through intersystem crossing are prevalent deep inside molecular clouds. This concept might be exportable to reactions involving polycyclic aromatic hydrocarbons thus affording a versatile machinery to complex organics via third-body stabilizations of bimolecular collision complexes deep inside cold molecular clouds.

astrochemistry↗