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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Au catalyst assisted growth of ZnO nanowires by vapour phase transport method on p-Si and fabrication of p-Si/n-ZnO heterojunction diode

In this work ZnO nanowires were grown on p type silicon (p-Si) substrate using Vapor-Liquid-Solid (VLS) approach using Au as catalyst by vapor phase transport growth method. Surface morphology and structural properties of the grown ZnO nanowires were examined by Scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. Using the n-ZnO nanowires (NW) grown on p-type silicon, n-ZnO NW/p-Si heterojunction diode was fabricated. The rectification property of the fabricated diode was studied by room temperature as well as high temperature (up to 370 K) current-voltage (I-V) measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Reducing galvanomagnetic effects in spin pumping measurement with Co{sub 75}Fe{sub 25} as a spin injector

We have investigated dc voltage generation induced by ferromagnetic resonance in a Co{sub 75}Fe{sub 25}/Pt film. In order to reduce rectification effects of anisotropic magnetoresistance and the planar Hall effect, which may be observed simultaneously with the inverse spin Hall effect, we selected Co{sub 75}Fe{sub 25} with extremely small anisotropic magnetoresistance as a spin injector. Using the difference in the spectral shape of voltage and in the angle dependence of in-plane magnetization among the effects, we demonstrated that the generated dc voltage is governed by the inverse spin Hall effect induced by spin pumping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Factorized molecular wave functions: Analysis of the nuclear factor

The exact factorization of molecular wave functions leads to nuclear factors which should be nodeless functions. We reconsider the case of vibrational perturbations in a diatomic species, a situation usually treated by combining Born-Oppenheimer products. It was shown [R. Lefebvre, J. Chem. Phys. 142, 074106 (2015)] that it is possible to derive, from the solutions of coupled equations, the form of the factorized function. By increasing artificially the interstate coupling in the usual approach, the adiabatic regime can be reached, whereby the wave function can be reduced to a single product. The nuclear factor of this product is determined by the lowest of the two potentials obtained by diagonalization of the potential matrix. By comparison with the nuclear wave function of the factorized scheme, it is shown that by a simple rectification, an agreement is obtained between the modified nodeless function and that of the adiabatic scheme.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2015

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO{sub 2} interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found to be rich in oxygen and deficient in zinc.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Coherent phonon spectroscopy of non-fully symmetric modes using resonant terahertz excitation

We use intense terahertz (THz) frequency electromagnetic pulses generated via optical rectification in an organic crystal to drive vibrational lattice modes in single crystal Tellurium. The coherent modes are detected by measuring the polarization changes of femtosecond laser pulses reflecting from the sample surface, resulting in a phase-resolved detection of the coherent lattice motion. We compare the data to a model of Lorentz oscillators driven by the near-single-cycle broadband THz pulse. The demonstrated technique of optically probed coherent phonon spectroscopy with THz frequency excitation could prove to be a viable alternative to other time-resolved spectroscopic methods like standard THz time domain spectroscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Layer-transferred MoS{sub 2}/GaN PN diodes

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS{sub 2}/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS{sub 2} grown by chemical vapor deposition on sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS{sub 2} films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of 0.23 eV for the transferred MoS{sub 2}/GaN heterojunction. This conduction band offset was confirmed by internal photoemission measurements. The energy band lineup of the MoS{sub 2}/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A WSe{sub 2}/MoSe{sub 2} heterostructure photovoltaic device

We report on the photovoltaic effect in a WSe{sub 2}/MoSe{sub 2} heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 10{sup 4}. Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe{sub 2}/MoS{sub 2} heterostructures, our devices perform better at long wavelengths and yield higher quantum efficiencies, in agreement with Shockley-Queisser theory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electrostatic analysis of n-doped SrTiO{sub 3} metal-insulator-semiconductor systems

Electron doped SrTiO{sub 3}, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO{sub 3} systems show reasonably strong rectification even when SrTiO{sub 3} is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO{sub x} in between the metal and n-SrTiO{sub 3} interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO{sub 3}) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO{sub 3}. The non-linear permittivity of n-SrTiO{sub 3} leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Absorption-reduced waveguide structure for efficient terahertz generation

An absorption-reduced planar waveguide structure is proposed for increasing the efficiency of terahertz (THz) pulse generation by optical rectification of femtosecond laser pulses with tilted-pulse-front in highly nonlinear materials with large absorption coefficient. The structure functions as waveguide both for the optical pump and the generated THz radiation. Most of the THz power propagates inside the cladding with low THz absorption, thereby reducing losses and leading to the enhancement of the THz generation efficiency by up to more than one order of magnitude, as compared with a bulk medium. Such a source can be suitable for highly efficient THz pulse generation pumped by low-energy (nJ-μJ) pulses at high (MHz) repetition rates delivered by compact fiber lasers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

The electrical, structural, and optical properties of coalescent p-n GaN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrate are investigated. From photoluminescence measurements the full width at half maximum of bound exciton peaks AX and DA is found as 1.3 and 1.2 meV, respectively. These values are lower than those reported previously in the literature. The current-voltage characteristics show the rectification ratio of about 10{sup 2} and the leakage current of about 10{sup −4} A/cm{sup 2} at room temperature. We demonstrate that the thermionic mechanism is not dominant in these samples and spatial inhomogeneties and tunneling processes through a ∼2 nm thick SiN{sub x} layer between GaN and Si could be responsible for deviation from the ideal diode behavior. The free carrier concentration in GaN NWs determined by capacitance-voltage measurements is about 4 × 10{sup 15 }cm{sup −3}. Two deep levels (H190 and E250) are found in the structures. We attribute H190 to an extended defect located at the interface between the substrate and the SiN{sub x} interlayer or near the sidewalls at the bottom of the NWs, whereas E250 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Antiferromagentic resonance detected by direct current voltages in MnF{sub 2}/Pt bilayers

We performed coplanar waveguide-based broadband ferromagnetic resonance experiments on the antiferromagnetic insulator MnF{sub 2}, while simultaneously recording the DC voltage arising in a thin platinum film deposited onto the MnF{sub 2}. The antiferromagnetic resonance is clearly reflected in both the transmission through the waveguide as well as the DC voltage in the Pt strip. The DC voltage remains largely unaffected by field reversal and thus presumably stems from microwave rectification and/or heating effects. However, we identify a small magnetic field orientation dependent contribution, compatible with antiferromagnetic spin pumping theory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗