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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18

Study of the anode plasma dynamics under the action of a high-power electron beam on epoxy resin

Results are presented from experimental studies of plasma dynamics in a diode gap under the action of a high-current relativistic electron beam on epoxy resin at energy densities in the range of 170–860 J/cm{sup 2}. The plasma expansion was studied by means of an optical streak camera. Three-dimensional numerical simulations in the one-temperature hydrodynamic approximation were also performed. The experimental data are compared with the results of numerical simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

A High-Efficiency, Low Cost, High-Temperature Nanocomposite Soft Magnetic Materials for Vehicle Power Electronics.

The charge components for each gas atomization experiment (GA-1-230, GA-1-232, and GA-1-238) was provided by Aegis and consisted of elemental materials, while MPC provided the master alloy arc melted button castings that were added to yield a charge composition of (Co35Fe65)88Zr7B4Cu. The atmosphere in the melting chamber and connected atomization system was evacuated with a mechanical pump prior to backfilling with ultrahigh purity (UHP grade) Ar. The melt was contained in a bottom tapped zirconia crucible with an alumina stopper rod to seal the exit while heating to a pouring temperature of 1550 – 1575oC. When the desired superheat was reached, the stopper rod was lifted and melt flowed through a yttria stabilized zirconia (YSZ) pour tube with a 3.2 mm orifice and was atomized with Ar from a 45-22-052-409 gas atomization nozzle (or atomization die), having a jet apex angle of 45 degrees with 22 cylindrical gas jets (each with diameter of 1.32 mm or 0.052 inches) arrayed around the axis of a 10.4 mm central bore. The Ar atomization gas supply regulator pressure was set to produce nozzle manifold pressures for the series of runs at a pressure of 450 psi. Secondary gas halos of Ar and He also were added to the interior of the spray chamber at various downstream locations for additional cooling of the atomized droplets and to prevent coalescence of the resulting powder. Powder size analysis and size classification were performed with a full set of ASTM sieves, starting with the 106 µm screen and proceeding down through the 20 µm screen. A Microtrac particle size analyzer was used to verify the size classification results of the particulate resulting from the runs. The resulting powder size distribution results are provided with this report labeled with their respective run numbers (GA-1-230, GA-1-232, and GA-1-238). It should be noted that the size distribution results of the first atomization run were quite acceptable and the same parameters were used for the second and third runs to test the reproducibility for technology transfer purposes.

33 ADVANCED PROPULSION SYSTEMS↗

Development of Capacitors for Power Electronics in Hybrid Vehicles

The purpose of this CRADA is to develop a fabrication process to reduce the manufacturing cost for a very compact, high temperature, film-on-foil high energy-density PLZT (Pb-La-Zr- Ti-O) capacitor. Motivation for this CRADA is derived from the DOE’s Office of Vehicle Technologies (OVT) program, which seeks to advance technologies to improve vehicle fuel efficiency in the mid-term and facilitate the transition to electric drive vehicles over the longterm. The objective of Argonne’s work is to develop and characterize high-performance capacitors on base-metal foils. The PLZT film-on-foil prepared using a spin-coating technique

36 MATERIALS SCIENCE↗

NCD Diamond Semiconductor System for Advanced Power Electronics Systems Integration : CRADA report

The integration of 2D materials such as molybdenum disulphide (MoS2) with diamond (3D) was achieved by forming an heterojunction between these two materials and its electrical performance was studied experimentally. The device charactertics did show good rectifying nature when p-type single crystal diamond was integrated with n-type MoS2. These results are very encouraging indicating possible applications in semiconductor electronics, however further studies are required for a detailed understanding of the transport phenomena at the MoS2/diamond interface.

36 MATERIALS SCIENCE↗