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Observations of the intensities of the Paschen lines in the spectrum of IC 418 together with published measurements of the Balmer-line intensities are utilized to derive a reddening constant, c = 0.31. Two additional emission lines, one at 1.087 micron and the second at 1.698 micron, are briefly discussed.
Oxide-passivated semiconductor chip is given protective glass coating by means of vapor deposition over metallic substrate of integrated circuit (IC). Method provides more reliable oxide-passivation and hermetic sealing in current use. Chips and scratches incurred during dicing, testing, and assembly are markedly reduced.
Azimuth correlator circuit synthetic-aperature radar (SAR) is designed for single integrated circuit (IC) chip. Azimuth correlator modules constructed with sets of such chips could make real-time signal processing possible. Primary advantages are realized in areas of weight and power requirement reductions.
Five image-tube spectrograms of the planetary nebula IC 4997 obtained during August 1977 show that the intensity forbidden ratio O III 4363 A/H-gamma 4340 A was equal to unity, but a sixth one obtained in April 1978 showed the ratio to be 0.91. These results represent a significant increase in the intensity ratio, which had been declining from 1895 to 1962 (when it was considerably less than unity), and is interpreted as resulting from a gradual increase in temperature of the nebula's central star accompanied by a transient event which led to a temporarily high value for the ratio in mid-1977.
Report discusses automated ion-implantation facility under development at Marshall Space Flight Center. Facility will produce ultra-reliable IC's with minimal human intervention.
Report discusses totally-automated oxidation and diffusion facility for fabricating IC's. Several innovations are demonstrated: process controller specifically designed for semiconductor processing; automatic loading system to accept wafers from air track, insert them in quartz carrier, and place carrier on paddle for insertion into furnace; automatic unloading of wafers back onto air track; and boron diffusion using diborane.
Recent far-infrared photometric and near-infrared spectroscopic observations of IC 1848 A/W5 East are reported. The source appears to be excited by a star of spectral type near B0, which can explain the far-infrared luminosity, 2 micron spectrum, radio continuum, and radio molecular observations. Although this star appears surrounded by a local very compact H II region, the density over a large scale is relatively low. This puts constraints on models for the formation of this star.
HEAO 1 observations of the spectrum of the supernova remnant IC 443 in the energy range of 0.4-3 keV reveal the presence of a complex structure suggestive of emission from Fe XVIII-XX, S XV-XVI, and Si XIII-XIV ions. The best electron temperature in the band for simple model fits is about (6-11) x 10 to the 6th K. Raymond and Smith collisional equilibrium emission models do not adequately fit the data. These results are discussed in terms of possible nonequilibrium effects in the remnant.
Low resolution IUE spectra of IC 3568 show several stellar P Cygni features. A high resolution spectrum was obtained which shows a saturated N V lambda 1240 profile from which we find the terminal velocity of the tellar wind to be v = 1840 km/s. The P Cygni features due to C IV lambda 1549, O V lambda 1371 and N IV lambda 1719 are also observed. The unsaturated O V lambda 1371 line seems best for determination of the mass loss rate. It is found that the level of ionization in the stellar wind appears to increase outwards. The possible effects of such stellar winds from central stars on surrounding nebulae are discussed.
The low-energy X-ray spectrum (0.15-3.0 keV) and X-ray centroid position of the supernova remnant IC 443 have been determined using data obtained by the HEAO-1 A-2 experiment. The spectrum exhibits a low-energy excess over and above that predicted by an extrapolation of the higher-energy spectrum determined by Parkes et al (1976). The excess can be attributed to line emission, predominately from high-ionization states of iron from a plasma at a temperature of 7.7 + or - 0.6 or -4.3 x 10 to the 6th K. Other models which fit the data are discussed, in particular, a lower-temperature component required to explain the Fe X optical emission.
Very high resolution spectroscopy of optical emission lines indicates that the velocity dispersions of knots in Cygnus Loop and IC 443 filaments result primarily from turbulence within the emitting regions. Line-of-sight velocity dispersions (half-widths at half-maximum) for the observed knots are on the order of 10-30 km/s, including associated thermal velocity dispersions of roughly 15 km/s for hydrogen, 6 km/s for oxygen, and 4 km/s for nitrogen. The knots themselves move randomly relative to each other with speeds of 10-30 km/s. Occasionally, diffuse components of the filaments are observed. These diffuse components have velocity dispersions between 60 and 85 km/s, but the relative contributions of turbulent and thermal motion to the dispersions are unkown.
The IUE satellite has undertaken UV observations of the proto-planetary nebulae V1016 Cyg, HM Sge, and HBV 475, yielding emission line fluxes, line ratios, line profiles, electron densities, and distances from these objects. While levels of increasing excitation and ionization as a function of time are shown by the data for the first two nebulae, the trend for HBV 475 is found to lead in the opposite direction. The formation of a shell is suggested by dramatic changes in the HM Sge UV line profiles over the last four years, including the disappearance of W-R features and the incipient splitting of the semi-forbidden C III 1909 A line. An additional IUE search for UV variability in the planetary nebulae IC 4997 and NGC 6905 has yielded emission line fluxes, line ratios and profiles, and central star temperatures, as well as stratification effects data for several ions in NGC 6905
Family of high-performance, tunable diode lasers developed for use as local oscillators in passive laser heterodyne spectrometer. Diodes fabricated using standard IC processes include photolithography, selective etching and vacuum deposition of metals and insulators. Packaging refinements improved thermal-cycling characteristics of diodes and increased room-temperature shelf life.
Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.
Walter and Kuhi (1981) have shown that at least 10 out of 12 T Tauri stars brighter than m(v) = 12.5 are X-ray emitters. The X-ray luminosities of these stars, L(x), are often close to the detection threshold value. One of the principal results of the present investigation is the evidence for at least a weak correlation between L(x) and V(R) sin i. If it is assumed that results obtained concerning stars in the Orion Ic Association are representative of other stellar fields, it appears that along with the RS CVn stars, pre-main-sequence G stars are among the most X-ray luminous late-type stars on the H-R diagram. A second conclusion is that the X-rays are almost certainly produced by flares and/or thin coronae close to the stellar surface.
The total ionizing dose response of fourteen IC types from eight manufacturers was measured using Co-60 gamma rays and 2.2-MeV electrons for exposure levels of 100 to 20,000 Gy(Si). Key parameter measurements were made and compared for each device type. The data show that a Co-60 source is not a suitable simulation source for some systems because of the generally more damaging nature of electrons as well as the unpredictable nature of the individual device response to the two types of radiations used here.
In this report some shortened BCH codes for possible applications to large IC random-access memory systems are presented. These codes are given by their parity-check matrices. Encoding and decoding of these codes are discussed.
The total ionizing dose response of fourteen IC types from eight manufacturers have been measured using Co-60 gamma rays and 2.2 MeV electrons for exposure levels of 100 to 20,000 Gy(Si). Key parameter measurements were made and compared for each device type. The data show that a Co-60 source may not be a suitable simulation source for some systems, because of the generally more damaging nature of electrons as well as the unpredictable nature of the individual device response to the two types of radiations used here.