SEARCH · Engineering Papers
Results for “GANs”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Magnesium doping profile control in p-GaN layers grown by metalorganic chemical vapor deposition
Not Available
Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method
Not provided.
1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation
Not Available
Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates
Not Available
Selective Area Epitaxy of GaN Nanostructures: MBE Growth and Morphological Analysis
Not provided.
Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions
Not provided.
Oxidizing Role of Cu Cocatalysts in Unassisted Photocatalytic CO 2 Reduction Using p-GaN/Al 2 O 3 /Au/Cu Heterostructures
Not Available
Semi-transparent quaternary oxynitride photoanodes on GaN underlayers
Beyond semi-transparent Ta 3 N 5 photoanodes: a generalized approach for manufacturing of semi-transparent quaternary metal oxynitride photoanodes aiming for wireless tandem photoelectrochemical water-splitting.
Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence
The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.
Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma
Not Available
Excitonic effects on electron spin orientation and relaxation in wurtzite GaN
Not provided.
Tuning the magnetic anisotropy in artificially layered Mn 3 GaN / Mn 3 Ga superlattices
Not provided.
WGAN-GP-Based Conditional GAN (cGAN) with Extreme Critic for Precipitation Downscaling in a Key Agricultural Region of the Northeastern U.S.
Not Available
Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode under UIS Stress for Edge-Termination Optimization.
Abstract not provided.