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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Synthesis and Characterization of Bulk Nd 1-x Sr x NiO 2 and Nd 1-x Sr x NiO 3

The recent reports of superconductivity in Nd 1-x Sr x NiO 2 /SrTiO 3 heterostructures have reinvigorated interest in potential superconductivity of low-oxidation state nickelates. Synthesis of Ni 1+ -containing compounds is notoriously difficult. In the current work, a combined sol-gel combustion and high-pressure annealing technique was employed to prepare polycrystalline perovskite Nd 1-x Sr x NiO 3 (x = 0, 0.1, and 0.2). Metal nitrates and metal acetates were used as starting materials, and the latter were found to be superior to the former in terms of safety and reactivity. The Nd 1-x Sr x NiO 3 compounds were subsequently reduced to Nd1-xSrxNiO2 using calcium hydride in a sealed, evacuated quartz tube. To understand the synthesis pathway, the evolution from NdNiO3 to NdNiO 2 was monitored using in situ synchrotron x-ray diffraction during the reduction process. Electrical transport properties were consistent with an insulator-metal transition occurring between x = 0 and 0.1 for Nd 1-x Sr x NiO 3 . Superconductivity was not observed in our bulk samples of Nd 1-x Sr x NiO 2 . Neutron diffraction experiments at 3 and 300 K were performed on Nd 0.9 Sr 0.1 NiO 2 , in which no magnetic Bragg reflections were observed, and the results of structural Rietveld refinement are provided.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mechanical Design of the PIP-II ORBUMP Pulsed Dipole Magnet

The Proton Improvement Plan-II (PIP-II) is a vital upgrade to Fermilab's accelerator complex. The upgrade is designed to power the world s most intense high-energy neutrino beam in future experiments. The magnet pulse repetition rate of the PIP-II injection system is being upgraded from 15 Hz to 20 Hz and requires a roughly 30% increase in the magnetic field of the new Orbital Bump (ORBUMP) magnets in the Booster. The magnet is secured in a vacuum box and the core is made up of 0.127 mm thick, low carbon steel laminations with a C-5 inorganic coating. The core is clamped using external tie bars welded to the core end plates. ANSYS Finite Element Analysis (FEA) was used to evaluate the clamping design to minimize the deflection of the core post welding of the tie bars. The water-cooled single turn coil is electrically isolated from the core using virgin PEEK insulating material in the gap. An investigation into the high voltage performance of the virgin PEEK insulator was conducted. The design of the coil which shapes the magnetic field by acting as the pole tips is critical for the integrated field homogeneity. The coil manufacturing tolerances and fabrication techniques were evaluated to ensure the magnetic properties of the magnet could be obtained. The ORBUMP magnet mechanical design is presented in this paper.

Karas, Dino [Fermilab] (ORCID:0000000304340670)↗
DOE OSTI2025

Unconventional unidirectional magnetoresistance in heterostructures of a topological semimetal and a ferromagnet

Unidirectional magnetoresistance (UMR) in a bilayer heterostructure, consisting of a spin-source material and a magnetic layer, refers to a change in the longitudinal resistance on the reversal of magnetization and originates from the interaction of non-equilibrium spin accumulation and magnetization at the interface. Since the spin polarization of an electric-field-induced non-equilibrium spin accumulation in conventional spin-source materials is restricted to be in the film plane, the ensuing UMR can only respond to the in-plane component of magnetization. However, magnets with perpendicular magnetic anisotropy are highly desired for magnetic memory and spin-logic devices, whereas the electrical read-out of perpendicular magnetic anisotropy magnets through UMR is critically missing. Here, in this study, we report the discovery of an unconventional UMR in the heterostructures of a topological semimetal (WTe 2 ) and a perpendicular magnetic anisotropy ferromagnetic insulator (Cr 2 Ge 2 Te 6 ), which allows to electrically read the up and down magnetic states of the Cr 2 Ge 2 Te 6 layer through longitudinal resistance measurements.

Kao, I-Hsuan [Carnegie Mellon Univ., Pittsburgh, P↗
DOE OSTI2021

Giant magnetostriction and nonsaturating electric polarization up to 60 T in the polar magnet $\mathrm{CaBaCo_4O_7}$

Giant magnetostriction in insulating magnetic materials is highly required for applications but is rarely observed. Here we show that giant magnetostriction (> 1500 ppm) can be achieved in an insulating transition metal oxide CaBaCo 4 O 7 where the ferrimagnetic ordering at T c ~ 62K is associated with a huge change in the lattice. Moreover, because this material is pyroelectric with a nonswitchable electric polarization (P), the giant magnetostriction results in a pronounced magnetoelectric effect—a huge change of electric polarization (ΔP ~ 1.6μC/cm 2 ) in response to the applied magnetic field up to 60 T. Geometric frustration as well as the orbital instability of Co 2+ /Co 3+ ions is believed to play a crucial role in the giant magnetostriction. Here our study provides insights on how to achieve both giant magnetostriction and pronounced magnetoelectric effect in insulating transition metal oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

High-frequency electrical behavior in V 3 O 5 thin films

Vanadium oxides are known for their metal–insulator transition (MIT), with V 3 O 5 being notable for its transition temperature exceeding room temperature. At about 430 K, this material shows a change in crystal symmetry accompanied with one order of magnitude increase in its electrical conductivity and alterations in its optical properties. Although the property changes during the MIT in V 3 O 5 are less pronounced than those observed in VO 2 , its transition temperature is 90 K higher, making it appealing for applications requiring elevated temperatures. In this article, the high-frequency characteristics were determined in a V 3 O 5 two-terminal device in the range from 5 to 35 GHz. The S-parameters showed that the return loss at room temperature was close to −1.5 dB, and the isolation between ports was approximately −50 dB. At temperatures above the metal–insulator transition, the isolation decreased to around −40 dB at 35 GHz. For S11 and S22, similar behavior was observed at room temperature, with a notable change in the S-parameter phase of the device. This behavior suggests that V 3 O 5 may function well as a capacitor because the considerable change in phase could control the flow of electrical signals in devices. This property also may be used for matching purposes, especially considering its response to temperature changes. Additionally, conductivity calculation from S-parameters shows a decrease of approximately two orders of magnitude at 500 K and one order of magnitude at 300 K compared to DC values. These findings highlight V 3 O 5 potential for integration into radio frequency devices that demand consistent performance in high-temperature environments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Change of Electrical and Transport Properties of Nickel Oxide by Carrier Concentration and Temperature through First-Principle Calculations

Abstract Nickel is typically used as one of the main components in electrical contact devices or connectors. Nickel oxide (NiO) is usually formed on the surfaces of electrodes and can negatively impact system performance by introducing electrical contact resistance. The thermal, electrical, and transport properties of NiO, as a Mott insulator or a p-type semiconductor, can be altered by operating and environmental conditions such as temperature and stress/strain by contact. In this study, we investigate the fundamental material properties of NiO through the first-principle calculations. First, we obtain and compare the lattice parameter, magnetic moment, and electronic structure for NiO via the WIEN2K simulations with four different potentials (i.e., GGA, GGA + U, LSDA, and LSDA + U). Then, using the WIEN2K simulation results with LSDA + U potential that produces a highly accurate bandgap for NiO, we calculate the electrical conductivity and electrical part of the thermal conductivity of nickel and NiO as a function of temperature and carrier concentration through the BoltzTraP simulations. Systematic simulation results revealed that the electrical conductivity relative to the relaxation time for NiO increases with the carrier concentration, while it shows a slightly decreasing trend with temperature under a fixed carrier concentration. By contrast, the electrical part of the thermal conductivity shows an increasing trend considering carrier concentration and temperature.

Shah, Nayem Md. Reza↗
DOE OSTI2023

Enhanced lightning strike protection using vertically oriented carbon fiber melded with conventional carbon fiber-reinforced composite and its validation through damage analysis

Lightning strike protection (LSP) is one of the prime factors in aerospace and wind industries concerning safety, enhanced service life, and reduced downtime. To ensure better LSP, high electrical conductivity is required to dissipate the current, which is always a challenge for polymer composites due to the inherent insulating nature of the polymer matrix. Conventional carbon fiber-reinforced composites (CFRP) offer electrical conductivity in the planar direction while the vertical i.e. through-thickness conductivity still remains a challenge. Having been motivated by this fact, we have fabricated CFRP interleaved with vertically oriented CF (Z-fiber) for the lightning strike test (100 kA). A paint was applied to mimic the actual service condition of the composite laminates. We have prepared two Z-fiber composites: (a) Z-1 containing one Z-fiber layer on the top along with conventional CF layers and (b) Z-5 containing five interleaved Z-fiber layers and compared the properties with conventional CFRP (Z-0). Interestingly, even a single Z-fiber layer (Z-1) showed lower damage (visual damage diameter 22 mm) than Z-0 (visual damage diameter 26 mm). Z-5 displayed the lowest damage (visual damage diameter 16.7 mm), which was further confirmed by cross-sectional optical microscopy. Improved LSP was attributed to the higher through-thickness electrical conductivity in the case of Z-5 (9 times with respect to Z-0) reflecting a lower electrical anisotropy for Z-fiber composites. The residual mechanical property after the lightning test was analyzed through the flexural test, and the retention of flexural strength and modulus was 66% and 86%, respectively for Z-5 showing a significant improvement in comparison to Z-0 (>40% for both).

Saha, Subhabrata↗
DOE OSTI2023

Colloidal superionic conductors

Nanoparticles with highly asymmetric sizes and charges that self-assemble into crystals via electrostatics may exhibit behaviors reminiscent of those of metals or superionic materials. Here, we use coarse-grained molecular simulations with underdamped Langevin dynamics to explore how a binary charged colloidal crystal reacts to an external electric field. As the field strength increases, we find transitions from insulator (ionic state), to superionic (conductive state), to laning, to complete melting (liquid state). In the superionic state, the resistivity decreases with increasing temperature, which is contrary to metals, yet the increment decreases as the electric field becomes stronger. Additionally, we verify that the dissipation of the system and the fluctuation of charge currents obey recently developed thermodynamic uncertainty relation. Our results describe charge transport mechanisms in colloidal superionic conductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenkamp and Gao). A characteristic conducting filament was quickly nucleated on the inhomogeneities in the sample and then propagated due to Joule heating. —JS

Science & Technology - Other Topics↗
DOE OSTI2020

Non-thermal resistive switching in Mott insulator nanowires

Abstract Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO 2 and V 2 O 3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO 2 and V 2 O 3 , suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Inversion of downhole electrical measurements for proppant mapping using very fast simulated annealing

Proppant mapping is critical for optimizing fracture treatment design and improving wells’ productivity. An electrode-based resistivity tool concept was developed earlier for proppant mapping in cased-hole wells. An array of insulating gaps is installed and cemented in place as a permanent part of the casing string. The electrical measurements are performed by imposing a voltage across each insulating gap, one at a time, before and after hydraulic fracture operations. The voltages across other insulating gaps near the transmitter gap are recorded. The method relies on direct excitation of the casing, which is expected to overcome the severe limitations of induction tools in cased-hole wells. A forward model based on a finite volume method has been developed to simulate the tool’s response to one or multiple fractures. To enable the implementation of such a practical system in multistage fractured horizontal wells, a fast and robust inversion approach is required. To that end, we have developed a divide-and-conquer approach based on a global optimization algorithm very fast simulated annealing (VFSA). Specifically, the original inverse problem is divided into subproblems and each subproblem can be solved separately using VFSA. The results indicate that our approach can invert the data and output widths and radii of multiple fractures without requiring a large number of forward simulations. The robustness of the inverse solver is also tested by adding Gaussian noise to the synthetic data. We tested example cases that demonstrate that when up to 5% noise is introduced, VFSA still provides very accurate inversion results with moderate uncertainties. Inversion results with some more realistic conditions, e.g., tilted fractures, complex fractures, and so on, are also presented.

Geochemistry & Geophysics↗
DOE OSTI2021

Probing the effect of magnetic field on charge order in the quasi-two-dimensional Mott insulator κ - (ET) 2 Hg(SCN) 2 Cl

Molecular-based quasi-two-dimensional charge-ordered Mott insulators can possess both spin S = 1/2 and an electric dipole degree of freedom residing on each (BEDT - TTF) 2 lattice site. There exists a theoretical proposal for a magnetoelectric effect in such a material, which can manifest itself as a sensitivity of charge distribution on (BEDT - TTF) 2 dimers to the magnetic field. Here in this work, we used Raman scattering spectroscopy in the magnetic field up to 31 T applied perpendicular to the two-dimensional triangular lattice planes to probe a magnetoelectric effect in $\kappa$ - (ET) 2 H g (SCN) 2 Cl. This is a model compound, which shows charge order and antiferromagnetic correlations at temperatures below 30 K. We discuss possible reasons for the absence of an observable magnetoelectric effect in the probed temperature and magnetic field ranges.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Modulating charge transport via 2 MeV He + irradiation in VO 2

Vanadium dioxide (VO 2 ) is of interest for adaptive electronic applications such as neuromorphic neuristor devices and variable emissivity or tunable thermal control materials, thanks to its key property—a metal–insulator transition (MIT) at 68 °C that is accompanied by a dramatic change in electrical and optical properties. To improve performance in these roles, it is critical to develop approaches to engineer transport properties and the MIT behavior. While many documented techniques exist to modulate the MIT and film resistivities via lattice strain and chemical doping, less is known about the effects of ion irradiation on the intrinsic properties of VO 2 , despite the ability to control the spatial distribution of irradiation beams and the prevalence of high energy ion implantation in the semiconductor industry. The impact of irradiation of different acceleration energies on the responses of VO 2 is of specific interest, as charged particle energy generally impacts both the resulting defect profile and corresponding transport behavior. Here, we demonstrate that 2 MeV He ions at equivalent calculated displacements per atom, in two different types of films, can create remarkable changes to the nature of charge transport in VO 2 , especially in the low-temperature insulating phase. Simulation of resulting changes in electrical conductivity reveals that He ion irradiation offers a strategy to increase both oscillation frequency and the signal transmission. These results provide insights into the intentional design of defect populations to modulate transport for neuromorphic VO 2 devices.

Gurrola, Rebeca M. [Texas A & M Univ., College Sta↗
DOE OSTI2023

VO 2 phase change electrodes in Li-ion batteries

Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation has not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO 2 ) cathode that undergoes a metal–insulator transition due to the first-order structural phase transition at an accessible temperature of 68 °C for battery operation. Using a suitable electrolyte operable across the phase transition range and compatible with vanadium oxide cathodes, we studied the effect of cathode active material structural changes on lithium insertion followed by the electrochemical characteristics above and below the phase transition temperature. The high-temperature VO 2 phase shows significantly improved capacitance, enhanced current rate capabilities, improved electrical conductivity and lithium-ion diffusivity compared to the insulating low temperature phase. In conclusion, this opens up new avenues for electrode design, allowing manipulation of electrochemical reactions around phase transition temperatures, and in particular enhancing electrochemical properties at elevated temperatures contrary to the existing class of battery chemistries that lead to performance deterioration at elevated temperatures.

25 ENERGY STORAGE↗
DOE OSTI2020

Epitaxial stabilization of ultra thin films of high entropy perovskite

High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La 0.2 Pr 0.2 Nd 0.2 Sm 0.2 Eu 0.2 )NiO 3 ] thin films on NdGaO 3 substrates by pulsed laser deposition. The combined characterizations with in situ reflection high energy electron diffraction, atomic force microscopy, and x-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive x-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO 3 . Furthermore, since both these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of A-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Semimetal–Mott insulator quantum phase transition of the Hubbard model on the honeycomb lattice

We take advantage of recent improvements in the grand canonical hybrid Monte Carlo algorithm, to perform a precision study of the single-particle gap in the hexagonal Hubbard model, with on-site electron-electron interactions. After carefully controlled analyses of the Trotter error, the thermodynamic limit, and finite-size scaling with inverse temperature, we find a critical coupling of U c /κ = 3.834(14) and the critical exponent zν = 1.185(43). Under the assumption that this corresponds to the expected antiferromagnetic Mott transition, we are also able to provide a preliminary estimate β = 1.095(37) for the critical exponent of the order parameter. We consider our findings in view of the SU(2) Gross-Neveu, or chiral Heisenberg, universality class. Here, we also discuss the computational scaling of the hybrid Monte Carlo algorithm, and possible extensions of our work to carbon nanotubes, fullerenes, and topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Effects of dimensionality on the electronic structure of Ruddlesden-Popper chromates Sr n+1 ⁢Cr n ⁢O 3⁢n+1

Transition-metal oxides host a wide variety of electronic phenomena that can be significantly influenced by the effective dimensionality of the system under consideration. These include charge, spin, and orbital orderings, as well as unconventional superconductivity. In this context, the Ruddlesden-Popper chromates Sr n+1 Cr n O 3n+1 emerge as a particularly intriguing series of materials. Formally, the chromium atom displays a rather special 4+ oxidation state throughout the entire series. However, the effective dimensionality changes from quasi-2D to 3D as n increases from 1 to ∞. As a result, the insulating antiferromagnetic behavior observed for n = 1, 2, 3 transforms into itinerant antiferromagnetism with reduced transition temperature for the n = ∞ end member of the series, i.e., the perovskite SrCrO 3 . Further, distinct orbital orderings with exotic singlet states have been predicted for these systems. However, the lack of single-crystal bulk or thin-film samples has made experimental progress difficult. Here we demonstrate the synthesis of thin films of the perovskite SrCrO 3 and the associated layered chromates via oxide molecular beam epitaxy for n = 1 to n = 5. Our electrical transport measurements reveal a gradual evolution from a strongly insulating state in Sr 2 CrO 4 to a metallic state in the end member SrCrO 3 . X-ray absorption spectroscopy measurements demonstrate a varying hybridization strength of the Cr 4+ valence electrons across the series, helping to explain the trend in conduction. Finally, density functional theory calculations further confirm the observed transport trend and identify additional distortions present in the system.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗