Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Dislocation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Short communication: Assessment of the dislocation density using X-ray topography in Al single crystals annealed for long times near the melting temperature

Earlier work by the authors determined the dislocation density as a function of time in aluminum single crystals annealed near the melting temperature using etch-pits. It was found that the dislocation density is stable and unchanged even with annealing times up to one year for statically annealed Al single crystals with an initially low dislocation density. As several investigators have suggested that etch-pits are not reliable compared to transmission electron microscopy in assessing the dislocation density, the current study utilized x-ray topography at a synchrotron for dislocation density measurements. This work, then, is a short paper complementing the authors earlier work by using a new, reliable, but rarely utilized non-destructive technique to measure the dislocation density. The results confirm the trend of the earlier study using etch-pits by the authors.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Movement of basal plane dislocations in GaN during electron beam irradiation

The movement of basal plane segments of dislocations in low-dislocation-density GaN films grown by epitaxial lateral overgrowth as a result of irradiation with the probing beam of a scanning electron microscope was detected by means of electron beam induced current. Only a small fraction of the basal plane dislocations was susceptible to such changes and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide for dislocations pinned by two different types of pinning sites: a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can be moved by irradiation and only until they meet the latter pinning sites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Microtwins and their effect on accumulation of excess dislocation density in grains with different types of crystal lattice bending in deformed austenitic steel

The investigation of excess dislocation density accumulation in the deformed polycrystalline austenitic steel was carried out using transmission electron microscopy (TEM). The distributions of the excess dislocation density in the grains of the deformed austenitic steel with different bending types were obtained and plotted. It was established that in the austenitic polycrystalline steel at the deformation degrees ε = 14 and 25 % the distributions of the excess dislocation density are multimodal. In both cases the grain with compound bending is more stressed. The values of the average excess dislocation density in the grains with the compound and simple bending are less at ε = 25 % than that at ε = 14 %. This is explained by a significant relaxation of the internal stresses in steel with the increase of the deformation degree from 14 % to 25 %. The increase of the number of twinning systems and the material volume fraction covered by twinning leads to the internal stress relaxation and consequently to the increase of the excess dislocation density. The presence of microtwins in the deformed material has an influence on the distribution of the excess dislocation density. In the deformed polycrystalline austenitic steel the number of grains with compound bending is increased with the increase of the plastic deformation degree.

36 MATERIALS SCIENCE↗
DOE OSTI2015

High dislocation density of tin induced by electric current

A dislocation density of as high as 10{sup 17} /m{sup 2} in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10{sup 3} A/ cm{sup 2}. The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Influence of loading control on strain bursts and dislocation avalanches at the nanometer and micrometer scale

Through three-dimensional discrete dislocation dynamics simulations, we show that by tuning the mode of external loading, the collective dynamics of dislocations undergo a transition from driven avalanches under stress control to quasiperiodic oscillations under strain control. We directly correlate measured intermittent plastic events with internal dislocation activities and collective dynamics. Under different loading modes, the roles of the weakest dislocation source and the defect population trend are significantly different. This finding raises new possibilities of controlling correlated dislocation activities and obtaining a low defect density in nanostructured devices by tuning external constraints. In addition, the effect of machine stiffness comes to light. The statistical analysis of the burst magnitude is revisited and carefully discussed. Self-organized criticality and scale-free statistics of strain bursts are obeyed under stress control. However, this behavior is shown to break down under strain control. Rapid stress drops under pure strain control force truncation of dislocation avalanches, leading to a dynamical transition to quasiperiodic oscillations.

3-dimensional systems↗
DOE OSTI2022

Discovery of multimechanisms of screw dislocation interaction in bcc iron from open-ended saddle point searches

Dislocation motion and interactions determine mechanical properties in body-centered cubic (bcc) metallic materials. However, studying mechanisms for the screw dislocation interaction is fundamentally challenging since many underlying processes involve mesotimescales and atomistic resolution, currently inaccessible by either experimental techniques or continuum theoretical methods. Here, in this paper, we develop a computational capability based on self-evolving atomistic kinetic Monte Carlo (SEAKMC) to sample the critical events and saddle point energies related to screw dislocations and their junctions. The method is first validated by calculating the stress dependence of Peierls barriers and formation energies of kink pairs and cross-slip kink pairs on a single screw dislocation in bcc iron. Then the method is applied to a binary junction of a pair of intersecting screw dislocations, the structure of which is crucial for low-temperature plastic deformation. We identify three important mechanisms: coplanar cross-slipping, jog-pinning, and a previously unknown unzipping mechanism during the evolution of the binary junction. The mechanisms are then further validated using classical molecular dynamics simulations. The computational capability developed in this paper provides an effective tool to evaluate screw dislocation related thermally activated events in complex stress conditions. The mechanisms discovered in this paper provide critical insights into temperature dependence of the anomalous slip, a breakdown of the Schmidt law, during the plastic deformation in bcc iron and can be generalized to other bcc metals.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Polymorphic structure of $\langle a \rangle$-type screw dislocation cores in $\alpha$-Ti

The dislocation core structure has a significant role in determining the dominant slip plane and the magnitude of the Peierls stress for a dislocation. An important challenge when studying dislocation cores is to determine the stable and metastable core morphologies, and then relate these structures to the dynamics of the dislocations. ere this study introduces a method for identifying core structures that are metastable at zero temperature. Application of this method to $\langle$a$\rangle$-type screw dislocations in α-Ti (as described using an empirical potential) reveals a multitude of (meta)stable nonplanar cores. Molecular dynamics studies show how the competing metastable core structures determine the properties of the dislocations at temperature and under a range of non-Schmid stresses.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Dislocation contrast on X-ray topographs under weak diffraction conditions

The contrast of dislocations in 4H-SiC crystals shows distinctive features on grazing-incidence X-ray topographs for diffraction at different positions on the operative rocking curve. Ray-tracing simulations have previously been successfully applied to describe the dislocation contrast at the peak of a rocking curve.The present work shows that the dislocation images observed under weak diffraction conditions can also be simulated using the ray-tracing method. Furthermore, these simulations indicate that the contrast of the dislocations is dominated by orientation contrast. Analysis of the effective misorientation reveals that the dislocation contrast in weak-beam topography is more sensitive to the local lattice distortion, consequently enabling information to be obtained on the dislocation sense which cannot be obtained from the peak.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Integral X-ray diffuse scattering for studying irradiation-induced dislocation loops in single crystals

Numerical diffuse scattering cross-section calculations are used to establish a rigorous basis for determining the concentration and size distribution of dis­location loops in irradiated single crystals from integral X-ray diffuse scattering (XRDS) measurements. Differential XRDS intensities for prismatic {111} type dislocation loops are numerically calculated as a function of loop radius R and wavevectors q relative to Bragg reflections in tungsten. The results show the well known 1/q 2 Huang scattering form at small q that transitions to a ∼1/q 4 dependence associated with the Stokes–Wilson approximation for q ≳ 1/R. More importantly, they show further that the 1/q 4 falloff is not the asymptotic large-q form of the diffuse scattering for small loops (R < 200 Å) as has often been assumed. Rather, for loop sizes as small as R ≃ 5 Å with strong curvature, the calculations show definitively that the scattering transitions to a robust 1/q 5 falloff at larger q that arises due to the local strains near the dislocation core defining the circumference of the dislocation loops. The presence of this 1/q 5 asymptotic form for both small and large loops is experimentally confirmed using an integral XRDS measurement around the 110 reflection on self-ion-irradiated tungsten combined with numerically calculated integral XRDS cross-sections. Accordingly, the historical two-region theoretical treatment of the cross-sections for integral XRDS is extended to a three-region model that has direct sensitivity to the (first-moment) dislocation line lengths of dislocation loops. In conclusion, these developments enable the use of both numerical and analytically modeled cross-sections to make accurate integral XRDS determinations of dislocation loop sizes and concentrations using modest-intensity laboratory X-ray sources.

42 ENGINEERING↗
DOE OSTI2013

Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers

The dislocation networks in structures with hydrophilically bonded Si (001) wafers are investigated by transmission electron microscopy. Networks with differing geometry and type of dominant dislocations are observed. One type of networks, which is typical of bonded structures, is formed on the basis of a square network of screw dislocations and contains a system of unidirectional 60 Degree-Sign zigzag-shaped dislocations. It is established that such dislocation networks are flat in structures with an azimuthal misorientation of wafers exceeding 2 Degree-Sign , whereas they are three-dimensional at smaller misorientation angles. A unique network of another type is formed only by 60 Degree-Sign dislocations, the majority of which are extended along one direction, which does not coincide with the Left-Pointing-Angle-Bracket 110 Right-Pointing-Angle-Bracket directions in the boundary plane and has a number of specific features, the explanation of which is impossible within the framework of conventional representations.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Simulated Contrast of Two Dislocations

A three-dimensional Monte Carlo simulation algorithm is used to study the contrast of two dislocations perpendicular to the irradiated surface of an n-doped silicon sample in the electron beam induced current mode. The dislocations are positioned in the irradiation trajectory, and each of both is considered as a cylinder where the minority carrier diffusion length varies abruptly from a low inside dislocations up to a high value outside dislocations. The EBIC contrast was obtained by simulating the random diffusion of carriers generated at point-like sources randomly distributed within the generation volume. Results are analyzed on the basis of change in the generation volume in the bulk of the sample and of carrier trapping process inside dislocations. The EBIC contrast increases with the increase of the electron beam energy. It also increases when the minority diffusion length inside dislocations, or their separating distance decreases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Properties of Dislocation Drag from Phonon Wind at Ambient Conditions

It is well known that, under plastic deformation, dislocations are not only created but also move through the crystal, and their mobility is impeded by their interaction with the crystal structure. At high stress and temperature, this “drag” is dominated by phonon wind, i.e., phonons scattering off dislocations. Employing the semi-isotropic approach discussed in detail in a previous paper (J. Phys. Chem. Solids 2019, 124, 24–35), we discuss here the approximate functional dependence of dislocation drag B on dislocation velocity in various regimes between a few percent of transverse sound speed c T and c T (where c T is the effective average transverse sound speed of the polycrystal). In doing so, we find an effective functional form for dislocation drag B ( v ) for different slip systems and dislocation characters at fixed (room) temperature and low pressure.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Electronic Structure Calculations of Oxygen Atom Transport Energetics in the Presence of Screw Dislocations in Tungsten

Plastic flow in body-centered cubic (bcc) alloys is governed by the thermally-activated motion of screw dislocations in close-packed planes. In bcc interstitial solid solutions, solute diffusion can occur at very fast rates owing to low migration energies and solute concentrations. Under mechanical loading, solutes may move on the same or similar time scale as dislocations glide, even at low temperatures, potentially resulting in very rich co-evolution processes that may have important effects in the overall material response. It is therefore important to accurately quantify the coupling between interstitial impurities and dislocations, so that larger-scale models can correctly account for their interactions. In this paper, we use electronic structure calculations to obtain the energetics of oxygen diffusion under stress and its interaction energy with screw dislocation cores in bcc tungsten. We find that oxygen atoms preferentially migrate from tetrahedral to tetrahedral site with an energy of 0.2 eV. This energy couples only weakly to hydrostatic and deviatoric deformations, with activation volumes of less than 0.02 and 0.02 b 3 , respectively. The strongest effect is found for the inelastic interaction between O atoms and screw dislocation cores, which leads to attractive energies between 1.2 and 1.9 eV and sometimes triggers a transformation of the screw dislocation core from an easy core configuration to a hard core configuration.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Phase-field dislocation modeling of cross-slip

The phase-field dislocation dynamics (PFDD) model is extended to simulate cross-slip in body-centered cubic materials. The model makes use of a non-orthogonal, body-centered cubic numerical grid such that all calculable points lie on dislocation glide planes. We demonstrate that the advanced PFDD model predicts a low-energy, non-planar core for screw dislocations and a planar core for edge dislocations. These core differences result in screw-edge character dependence in the critical stress to initiate glide and dislocation drag coefficients. Finally, we show that this model can be used to study the propensity of screw dislocations to cross-slip around or transmit through a coherent, crystallographic obstacle, depending on obstacle strength.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Unraveling the dislocation–precipitate interactions in high-entropy alloys

The precipitates play a significant role in not only enhancing the strength, but also maintaining the high toughness in alloys. However, the interactions of the nanoscale precipitates with dislocations in the high entropy alloys (HEAs) are difficult to observe directly by in-situ TEM experiments due to the limits of the resolution and time. Here, using atomic simulations we report the synergistic strengthening of the coherent precipitate and atomic-scale lattice distortion in the HEAs at cryogenic/elevated temperatures. The effects of temperature, chemical disorder, precipitate spacing, precipitate size, elemental segregation, and dislocation-cutting number on the critical stress for the dislocation to overcome a row of precipitates are studied. A random stacking fault energy landscape along the slip plane, the lattice distortion at different temperatures, and the interface/surface energy at various crystallographic orientations are obtained. Compared with the traditional metals and alloys, HEAs have the severe atomic-scale lattice distortions to generate the local high tensile/compressive stress fields. This complex stress causes the dislocation line to bend, and thus improves the dislocation slip resistance, resulting in the strong solid-solution strengthening. The stacking fault strengthening induced by the obvious difference of the stacking fault energies between the HEA matrix and precipitate (within the inner of the HEA matrix), and the formation of the antiphase domain boundary contribute to the high strength. The precipitate embedded by the solute atoms produces the strong lattice distortion to enhance the dislocation slip resistance at high temperatures. Hence, the current results provide the mechanistic insight into the phenomenon that the coherent precipitate combined with the severe atomic-scale lattice distortion can enhance the strength at cryogenic/elevated temperatures to further broaden the scope of applications of advanced HEAs.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A novel approach to quantifying the kinetics of point defect absorption at dislocations

We report that microstructure evolution under creep loading and/or irradiation is largely affected by the two-way coupling between dislocation induced plasticity and point defect diffusion as mediated by the internal elastic strain field within the medium. The magnitude of this effect has been quantified only in idealized, simplified environments such that estimates of absorption rates of point defects to dislocations ignore the collective effects on capture rates arising from particular distribution of dislocations in a given network, the interaction of point defects with the internal strain, or in many cases both. To quantify these effects, we advance a novel methodology to determine point defect capture rates locally within a spatially resolved finite difference solution to the diffusion problem for arbitrarily directed dislocations and the corresponding strain fields. In addition to examining the effects of these couplings on local and effective absorption rates of dislocation networks, the potential consequences of these interactions on other microstructure evolution phenomena are examined using void swelling under irradiation as an example. Our study indicates that local rates of defect mediated microstructural changes such as cavity growth can vary strongly as a consequence of the arrangement of the dislocation network and the corresponding strain state. Lastly, the heterogeneous aspects of the resultant defect populations are shown to provide mechanisms for microstructural evolution under irradiation that are not available in the conventional homogeneous theory.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Changes in dislocation punching behavior due to hydrogen-seeded helium bubble growth in tungsten

The accumulation of gas atoms in tungsten is a topic of long-standing interest to the plasma-facing materials community due the metal's use as a divertor material in some tokamak fusion reactors. The nucleation and growth of He/H gas bubbles (along with their isotopes) can result from impinging fluxes of these gases which give rise to damage at the W divertor surface. The inclusion of He or H in W has been studied extensively by the community, finding that He bubbles modify the surface through periodic dislocation punching and bursting mechanisms while H bubbles impact the metal through plastic-strain induced material failure. However, the mechanisms which are present during the combined flux of both He and H is not well-studied atomistically. Motivated by this, an atomistic modeling study is conducted using molecular dynamics to assess the behavior of mixed concentration He:H bubbles in W. Here we find that the introduction of H into a growing He bubble results in a dramatic change in the nature and presence of dislocation loops which are typically generated via dislocation punching in over-pressurized He bubbles. Most notably, at high H concentrations, there is a switchover in energetic favorability from glissile 1/2<111> dislocations to sessile <100> dislocations. This thermodynamic crossover could imply a significant reduction in W surface morphology changes than with pure He bubbles and, additionally, we show this to have implications on the trapping of H in the bubbles and their associated dislocations.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Velocity dependent dislocation drag from phonon wind and crystal geometry

The mobility of dislocations is an important factor in understanding material strength. Dislocations experience a drag due to their interaction with the crystal structure, the dominating contribution at high stress and temperature being the scattering off phonons due to phonon wind. Yet, the velocity dependence of this effect has eluded a good theoretical understanding. In a previous work, dislocation drag from phonon wind as a function of velocity was computed from first principles in the isotropic limit, in part for simplicity, but also arguing that macroscopically, a polycrystalline metal looks isotropic. However, since the single crystal grains are typically a few microns up to a millimeter in size, dislocations travel in single crystals and cross boundaries, but never actually see an isotropic material. In this work we therefore highlight the effect of crystal anisotropy on dislocation drag by accounting for the crystal and slip plane geometries. In particular, we keep the phonon spectrum isotropic for simplicity, but dislocations are modeled according to the crystal symmetry (bcc, fcc, hcp, etc.). We then compare to the earlier purely isotropic results, as well as to experimental data and MD simulations where they are available.

36 MATERIALS SCIENCE↗