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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Coexistent Quantum Channel Characterization Using Spectrally Resolved Bayesian Quantum Process Tomography

The coexistence of quantum and classical signals over the same optical fiber with minimal degradation of the transmitted quantum information is critical for operating large-scale quantum networks over the existing communications infrastructure. In this work, we systematically characterize the quantum channel that results from simultaneously distributing approximate single-photon polarization-encoded qubits and classical light of varying intensities through fiber-optic channels of up to 15 km. Using spectrally resolved quantum process tomography with a Bayesian reconstruction method that we develop, we estimate the full quantum channel from experimental photon counting data, both with and without classical background. Furthermore, although we find the exact channel description to be a weak function of the pump polarization, we nevertheless show that the coexistent fiber-based quantum channel has high process fidelity with an ideal depolarizing channel when the noise is dominated by Raman scattering. These results provide a basis for the future development of quantum repeater designs and quantum error-correcting codes for real-world channels and inform models used in the analysis and simulation of quantum networks.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Quantum computing for heavy quarkonium spectroscopy

Here, we report a first demonstration for the application of quantum computing to heavy quarkonium spectroscopy study. Based on a Cornell-potential model for the heavy quark and antiquark system, we show how this Hamiltonian problem can be formulated and solved with the variational quantum eigensolver (VQE) approach on the IBM cloud quantum computing platform. Errors due to a global depolarizing noise channel are corrected with a zero-noise extrapolation method, resulting in good agreement with the expected value. We also generalize the VQE method for solving excited states by orthogonalization with respect to the ground state. This new approach is demonstrated to be successful for the quarkonium system on a noiseless quantum simulator and can easily be adapted for solving similar excited state problems in many other physical systems.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

Quantum simulations for strong-field QED

Quantum field theory in the presence of strong background fields contains interesting problems where quantum computers may someday provide a valuable computational resource. In the noisy intermediate-scale quantum era it is useful to consider simpler benchmark problems in order to develop feasible approaches, identify critical limitations of current hardware, and build new simulation tools. Here we perform quantum simulations of strong-field QED (SFQED) in 3 + 1 dimensions, using real-time nonlinear Breit-Wheeler pair production as a prototypical process. The strong-field QED Hamiltonian is derived and truncated in the Furry-Volkov mode expansion, and the interactions relevant for Breit-Wheeler are transformed into a quantum circuit. Quantum simulations of a “null double slit” experiment are found to agree well with classical simulations following the application of various error mitigation strategies, including an asymmetric depolarization algorithm which we develop and adapt to the case of Trotterization with a time-dependent Hamiltonian. We also discuss longer-term goals for the quantum simulation of SFQED. Published by the American Physical Society 2024

Astronomy & Astrophysics↗
DOE OSTI2020

Spin Reversal of a Quantum Hall Ferromagnet at a Landau Level Crossing

When Landau levels (LLs) become degenerate near the Fermi energy in the quantum Hall regime, interaction effects can drastically modify the electronic ground state. Here, we study the quantum Hall ferromagnet formed in a two-dimensional hole gas around the LL filling factor v = 1 in the vicinity of a LL crossing in the heave-hole valence band. Cavity spectroscopy in the strong-coupling regime allows us to optically extract the spin polarization of the two-dimensional hole gas. By analyzing this polarization as a function of hole density and magnetic field, we observe a spin flip of the ferromagnet. Furthermore, the depolarization away from v = 1 accelerates close to the LL crossing. This is indicative of an increase in the size of skyrmion excitations as the effective Zeeman energy vanishes at the LL crossing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Cross Entropy Benchmark for Measurement-Induced Phase Transitions

Here, we investigate prospects of employing the linear cross entropy to experimentally access measurement-induced phase transitions without requiring any postselection of quantum trajectories. For two random circuits that are identical in the bulk but with different initial states, the linear cross entropy χ between the bulk measurement outcome distributions in the two circuits acts as an order parameter, and can be used to distinguish the volume law from area law phases. In the volume law phase (and in the thermodynamic limit) the bulk measurements cannot distinguish between the two different initial states, and χ = 1. In the area law phase χ < 1. For circuits with Clifford gates, we provide numerical evidence that χ can be sampled to accuracy ϵ from O⁢(1/ϵ 2 ) trajectories, by running the first circuit on a quantum simulator without postselection, aided by a classical simulation of the second. We also find that for weak depolarizing noise the signature of the measurement-induced phase transitions is still present for intermediate system sizes. In our protocol we have the freedom of choosing initial states such that the “classical” side can be simulated efficiently, while simulating the “quantum” side is still classically hard.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Optimal Twirling Depth for Classical Shadows in the Presence of Noise

The classical shadows protocol is an efficient strategy for estimating properties of an unknown state p using a small number of state copies and measurements. In its original form, it involves twirling the state with unitaries from some ensemble and measuring the twirled state in a fixed basis. It was recently shown that for computing local properties, optimal sample complexity (copies of the state required) is remarkably achieved for unitaries drawn from shallow depth circuits composed of local entangling gates, as opposed to purely local (zero depth) or global twirling (infinite depth) ensembles. Here, we consider the sample complexity as a function of the depth of the circuit, in the presence of noise. We find that this noise has important implications for determining the optimal twirling ensemble. Under fairly general conditions, we (i) show that any single-site noise can be accounted for using a depolarizing noise channel with an appropriate damping parameter f, (ii) compute thresholds f th at which optimal twirling reduces to local twirling for Pauli operators, (iii) nth order Renyi entropies (n ≥2), and (iv) provide a meaningful upper bound t max on the optimal circuit depth for any finite noise strength f, which applies to observables and entanglement entropy measurements. In conclusion, these thresholds strongly constrain the search for optimal strategies to implement shadow tomography and are easily tailored to the experimental system at hand.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Dynamics of Thermally Driven Domain Transformation in Ferroelectric Thin Films

An important feature in ultrathin ferroelectric films is the spontaneous formation of nanoscale polarization domain patterns. Epitaxial strain can greatly increase the ferroelectric transition temperature such that films can be in the ferroelectric state during growth. On the other hand, depolarization fields compete with ferroelectricity in ultrathin films, and, consequently, the optimal domain configuration during growth is a moving target. Under these conditions it is readily possible for a grown film to be in a nonequilibrium domain configuration. As the energy landscape in the system is quite complex, the relaxation dynamics by which a system can evolve towards the true equilibrium configuration are also quite interesting. Here, to capture the details of this process we used Bragg-geometry x-ray photon correlation spectroscopy (XPCS), in which x-ray scattering speckle patterns contain the information from the domain arrangements inside the film. With modest heating (∼15⁢0 °C) domain relaxation from 𝑇 (tetragonal) to 𝑀 𝐶 (monoclinic) was observed in BaTiO 3 films grown on ultrathin ferroelectric PbTiO 3 layers. Two-time correlation analysis reveals fascinating details associated with sticking points and reversals in the process.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thickness and strain dependence of piezoelectric coefficient in BaTiO 3 thin films

We explore the thickness dependence of the converse piezoelectric coefficient (d 33 ) in epitaxial thin films of BaTiO 3 (BTO) grown on (001) SrTiO 3 substrates. Piezoresponse force microscope was performed using an atomic force microscope equipped with an interferometric displacement sensor allowing direct quantification of electromechanical coupling coefficients in BTO free from unwanted background contributions. We find that 80-nm-thick films exhibit a d 33 of ~20.5pm/V, but as the thickness is reduced, the d 33 reduces to less than 2 pm/V for a 10 nm film. To explain the atomistic origin of the effect, we performed molecular dynamics simulations with a recently developed ab initio-derived reactive force field, constructed using the ReaxFF framework. Simulations predict that under applied electric fields thin films of BaTiO 3 show an increasing thickness, with compressive strain, of the region screening the depolarization-field. This study confirms quantitatively the drop in piezoelectric performance in BTO ultrathin films and again highlights the importance of the screening mechanisms when films approach the ultrathin limits in dictating the functional behaviors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder

Using time-resolved optical Kerr rotation, here we measure the low-temperature valley dynamics of resident electrons and holes in exfoliated WSe 2 monolayers as a systematic function of carrier density. In an effort to reconcile the many disparate timescales of carrier valley dynamics in monolayer semiconductors reported to date, we directly compare the doping-dependent valley relaxation in two electrostatically gated WSe 2 monolayers having different dielectric environments. In a fully encapsulated structure ( hBN / WSe 2 / hBN , where hBN is hexagonal boron nitride), valley relaxation is found to be monoexponential. The valley relaxation time τ v is quite long ( ~ 10 μ s ) at low carrier densities, but decreases rapidly to less than 100 ns at high electron or hole densities ≳ 2 × 10 12 cm – 2 . In contrast, in a partially encapsulated WSe 2 monolayer placed directly on silicon dioxide ( hBN / WSe 2 / SiO 2 ) , carrier valley relaxation is multiexponential at low carrier densities. The difference is attributed to environmental disorder from the SiO 2 substrate. Unexpectedly, very small out-of-plane magnetic fields can increase τ v , especially in the hBN / WSe 2 / SiO 2 structure, suggesting that localized states induced by disorder can play an important role in depolarizing spins and mediating the valley relaxation of resident carriers in monolayer transition-metal dichalcogenide semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Tip-based proximity ferroelectric switching and piezoelectric response in wurtzite multilayers

Proximity ferroelectricity is a paradigm for inducing ferroelectricity when a nonferroelectric polar material (such as Al⁢ N), which is unswitchable with an external field below the dielectric breakdown field, becomes a practically switchable ferroelectric in direct contact with a thin switchable ferroelectric layer (such as Al 1−𝑥 ⁢Sc 𝑥 ⁢N). Here, we develop a Landau-Ginzburg-Devonshire approach to study the proximity effect of local piezoelectric response and polarization reversal in wurtzite ferroelectric multilayers under a sharp electrically biased tip. Using finite-element modeling, we analyze the probe-induced nucleation of nanodomains, the features of local polarization hysteresis loops and coercive fields in the Al 1−𝑥 ⁢Sc 𝑥 ⁢N/Al⁢ N bilayers and three-layers. Similar to the wurtzite multilayers sandwiched between two parallel electrodes, the regimes of “proximity switching” (when all layers collectively switch) and the regime of “proximity suppression” (when they collectively do not switch) are the only two possible regimes in the probe-electrode geometry. However, the parameters and asymmetry of the local piezoresponse and polarization hysteresis loops depend significantly on the sequence of the layers with respect to the probe. The physical mechanism of proximity ferroelectricity in the local probe geometry is a depolarizing electric field determined by the polarization of the layers and their relative thickness. The field, whose direction is opposite to the polarization vector in the layer(s) with the larger spontaneous polarization (such as Al⁢ N), renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier in the “otherwise unswitchable” polar layers. Tip-based control of domains in otherwise nonferroelectric layers using proximity ferroelectricity can provide nanoscale control of domain reversal in memory, actuation, sensing, and optical applications. The ability of the tip-induced proximity switching to differentially switch multilayers, based on the order of the layers, provides a powerful tool for selective domain engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of Nonunital Noise on Random-Circuit Sampling

In this work, drawing inspiration from the type of noise present in real hardware, we study the output distribution of random quantum circuits under practical nonunital noise sources with constant noise rates. We show that even in the presence of unital sources such as the depolarizing channel, the distribution, under the combined noise channel, never resembles a maximally entropic distribution at any depth. To show this, we prove that the output distribution of such circuits never anticoncentrates—meaning that it is never too “flat”—regardless of the depth of the circuit. This is in stark contrast to the behavior of noiseless random quantum circuits or those with only unital noise, both of which anticoncentrate at sufficiently large depths. As a consequence, our results shows that the complexity of random-circuit sampling under realistic noise is still an open question, since anticoncentration is a critical property exploited by both state-of-the-art classical hardness and easiness results. Published by the American Physical Society 2024

Physics↗
DOE OSTI2026

Polarization transmission in the Hadron Storage Ring of the Electron-Ion Collider

The successful operation of the future Electron-Ion Collider is contingent on maintaining high hadron beam polarization up to 275 GeV. The Hadron Storage Ring lattice, however, features a symmetry-breaking interaction region that excites strong, nonsystematic spin resonances, posing a significant threat to polarization preservation. This paper systematically investigates two complementary strategies to ensure high polarization transmission. The first method involves optimizing the vertical betatron phase advance between Siberian snakes to orchestrate a cancellation of depolarizing kicks across the ring. We demonstrate through simulations that both dynamic and fixed-optics solutions based on this principle can successfully preserve polarization through the strongest resonances. The second, more powerful approach involves optimizing the snake rotation axes to suppress resonance driving terms at their source. We revisit established symmetric configurations, such as the Lee-Courant schemes, and introduce a novel, highly symmetric “Doubly Lee-Courant” (DLC) scheme, which enforces a local 𝜋 spin phase advance across every consecutive pair of snakes. Our analysis reveals a clear performance hierarchy, with the DLC configuration providing an exceptionally robust and energy-insensitive baseline for polarization preservation. We conclude that a hybrid strategy, using a DLC snake scheme as a symmetric foundation and betatron phase tuning for fine corrections, offers the most effective path forward for the EIC and future high-energy polarized-beam facilities.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2026

Resilience of the surface code to error bursts

Quantum error correction works effectively only if the error rate of gate operations is sufficiently low. However, some rare physical mechanisms can cause a temporary increase in the error rate that affects many qubits; examples include ionizing radiation in superconducting hardware and large deviations in the global control of atomic systems. We refer to such rare transient spikes in the gate error rate as error bursts. In this work, we investigate the resilience of the rotated surface code to generic error bursts. We assume that, after appropriate mitigation strategies, the spike in the error rate lasts for only a single syndrome-extraction cycle; we also assume that the enhanced error rate is uniform across the code block. Under these assumptions, and for a circuit-level depolarizing noise model, we perform Monte Carlo simulations to determine the regime in burst error rate and background error rate for which the memory time becomes arbitrarily long as the code block size grows. Our results indicate that suitable hardware mitigation methods combined with standard decoding methods may suffice to protect against transient error bursts in the rotated surface code.

Quantum error correction↗
DOE OSTI2025

Disentangling the impact of quasiparticles and two-level systems on the statistics of superconducting-qubit lifetime

Temporal fluctuations in the superconducting qubit lifetime, T 1 , present additional challenges in the pursuit of fault-tolerant quantum computing. Although the exact mechanisms remain unclear, T 1 fluctuations are generally attributed to strong coupling between the qubit and a few near-resonant two-level systems (TLSs), which can exchange energy with an ensemble of thermally fluctuating two-level fluctuators (TLFs) at low frequencies. Here, we report T 1 measurements of qubits with varying geometrical footprints and surface dielectrics as a function of temperature. By analyzing the noise spectrum of the qubit depolarization rate, Γ 1 = 1 / T 1 , we disentangle the contributions of TLSs, nonequilibrium quasiparticles (QPs), and equilibrium (thermally excited) QPs to the variance in Γ 1 . We find that the Γ 1 variance in qubits with smaller footprints is more susceptible to QP and TLS fluctuations than that in larger-footprint qubits. Furthermore, the QP-induced variances in all qubits align with the theoretical framework of QP diffusion and fluctuation. These findings offer valuable insights for future qubit design and engineering optimization.

Zhu, Shaojiang [Fermilab] (ORCID:0000000293180092)↗
DOE OSTI2021

Numerical Simulations of Noisy Variational Quantum Eigensolver Ansatz Circuits

This is a case study of the variational quantum eigensolver (VQE) method using numerical simulations to test the influence of noise on the accuracy of the underlying circuit ansatz. We investigate a computational chemistry application of VQE to calculate the electronic ground state and its energy for Sodium Hydride (NaH), a prototypical two-electron problem. Using a one-parameter ansatz derived from unitary coupled cluster (UCC) theory, we simulate the effects of noise on the energy expectation value and variance with respect to the ansatz parameter. These numerical simulations provide insights into the accuracy of the prepared quantum state and the efficiency of the classical optimizer that iteratively refines the ansatz. We conduct a comparative study between analytical results derived for the UCC ansatz in the absence of noise and the noisy numerical simulation results obtained using an isotropic depolarizing noise model for each gate. We also compare the relative increase in noise on logically equivalent UCC ansatz circuits generated by randomized compiling. Notably, we observe that the intrinsic variance in the energy due to the simplicity of the ansatz itself compares with the noise induced by the bare circuit.

Gowrishankar, Meenambika↗
DOE OSTI2024

Parasitic Modulation of Microwave Signals by a Hypersonic Plasma Layer

During hypersonic flight, compressional and viscous heating of the air can form a plasma layer which encases the aircraft. If the boundary layer becomes turbulent, then the electron density fluctuations can effect a parasitic modulation in microwave signals transmitted through the plasma. We developed an approach for studying the interaction of microwave signals with a turbulent, hypersonic plasma layer. The approach affords a great deal of flexibility in both the plasma layer model and the antenna configuration. We then analyzed a situation in which microwaves, transmitted from a rectangular aperture antenna, propagate through a turbulent plasma layer to a distant receiver. We characterized the first-and second-order statistics of the computed parasitic modulation and quantified the depolarization of the signal. The amplitude fluctuations are lognormally distributed at low frequencies and Rice-distributed at high frequencies. Fluctuations in the copolarized phase and amplitude of the far-field signal are strongly anticorrelated. Here, we used a multioutput Gaussian process (MOGP) to model these quantities. The efficacy of the MOGP model is demonstrated by recovering the time evolution of the copolarized phase given the copolarized amplitude and occasional measurements of the phase.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Robust Design Under Uncertainty in Quantum Error Mitigation

Error mitigation techniques are crucial to achieving near-term quantum advantage. Classical postprocessing of quantum computation outcomes is a popular approach for error mitigation, which includes methods, such as zero noise extrapolation, virtual distillation, and learning-based error mitigation. However, these techniques have limitations due to the propagation of uncertainty resulting from the finite shot number of a quantum measurement. In this work, we introduce general and unbiased methods for quantifying the uncertainty and error of error-mitigated observables based on the strategic sampling of error mitigation outcomes. We then extend our approach to demonstrate the optimization of performance and robustness of error mitigation under uncertainty. To illustrate our methods, we apply them to zero noise extrapolation and Clifford date regression in the ground state of the XY model simulated using depolarizing and International Business Machines Corporation (IBM) Toronto noise models, respectively. In particular, we optimize the choice of noise levels and the allocation of shots for zero noise extrapolation and the distribution of the training circuits for Clifford data regression. While our methods are readily applicable to any postprocessing-based error mitigation approach, in practice they must not be prohibitively expensive—even though they perform optimizations of the error mitigation hyperparameters requiring sampling of a statistical distribution of error mitigation outcomes. By leveraging surrogate-based optimization, we show that our methods can efficiently perform optimal design for a zero noise extrapolation implementation. We then further demonstrate the transferability of learned zero noise extrapolation hyperparameters to other similar circuits.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Impacts to FeRAM design arising from interfacial dielectric layers and wake up modulation in ferroelectric hafnium zirconium oxide

As ferroelectric hafnium zirconium oxide (HZO) becomes more widely utilized in ferroelectric microelectronics, integration impacts of intentional and non-intentional dielectric interfaces and their effects upon the ferroelectric film wake up and circuit parameters become important to understand. In this work, the effect of the addition of a linear dielectric aluminum oxide, Al 2 O 3 , below a ferroelectric Hf 0.58 Zr 0.42 O 2 film in a capacitor structure for FeRAM applications with NbN electrodes was measured. Depolarization fields resulting from the linear dielectric is observed to induce a reduction of the remanent polarization of the ferroelectric. Addition of the aluminum oxide also impacts the wake up of the HZO with respect to the cycling voltage applied. Intricately linked to the design of a FeRAM 1C/1T cell, the metal-ferroelectric-insulator-metal (MFIM) devices are observed to significantly shift charge related to the read states based on aluminum oxide thickness and wake up cycling voltage. As a result, a 33% reduction in the separation of read states is measured, which complicates how a memory cell is designed and illustrates the importance of clean interfaces in devices.

30 DIRECT ENERGY CONVERSION↗