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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Novel Poly-Si:Ga/SiOx Passivating Contacts through Non-Equilibrium Doping

Poly-Si/SiOx passivating contacts are one of the key enablers for high-efficiency, low-cost c-Si solar cells. In recent years, record devices have reached efficiencies of 26% in the laboratory and 25% in the industry. The current cell structure utilizing a tunneling oxide passivating contact structure with a back phosphorus-doped poly- Si/SiOx passivating contact and a front boron diffused emitter suffers from large emitter recombination. Thus, replacing the front B diffused emitter with a p-type passivating contact is a route to overcome this deficiency. This gives rise to front/back poly-Si based passivating contacts. To address the low passivation performance of the B-doped poly-Si passivating contacts, we replace B with Ga as a novel p-type dopant to avoid dopant accumulation in the tunneling oxide, which is known to lead to large degradation loss in passivation quality. Here, we introduce a non-equilibrium method via pulsed laser melting to thermally melt and recrystallize the poly-Si and redistribute the dopants, achieving doping concentrations above the solid solubility limit (~4E19 cm-3). We demonstrate a good passivation quality with an iVoc of 721 mV with an active Ga doping concentration in poly-Si >1020 cm-3. Furthermore, we show a low contact resistivity of 33.2 +/- 9.3 mO cm2 using a diode model calculation. Finally, cross-section scanning spreading resistance microscopy was performed to determine the resistance profile across the non-homogeneously doped poly-Si layer.

c-Si↗
DOE OSTI2023

Pulsed Laser Annealed Ga Hyperdoped Poly‐Si / SiO x Passivating Contacts for High‐Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si ( poly ‐Si)‐based passivating contacts are promising candidates for high‐efficiency crystalline Si solar cells. We show that nanosecond‐scale pulsed laser melting (PLM) is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit. We demonstrate that conventionally doped, hole‐selective poly ‐Si/SiO x contacts that provide poor surface passivation of c ‐Si can be replaced with Ga‐ or B‐doped contacts based on non‐equilibrium doping. We overcome the solid solubility limit for both dopants in poly ‐Si by rapid cooling and recrystallization over a timescale of ∼25 ns. We show an active Ga dopant concentration of ∼3 × 10 20 cm −3 in poly ‐Si which is six times higher than its solubility limit in c ‐Si, and a B dopant concentration as high as ∼10 21 cm −3 . We measure an implied open‐circuit voltage of 735 mV for Ga‐doped poly ‐Si/SiO x contacts on Czochralski Si with a low contact resistivity of 35.5 ± 2.4 mΩ cm 2 . Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p ‐ n junction that contributes to the low contact resistivity. Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high‐efficiency devices.

14 SOLAR ENERGY↗
DOE OSTI2019

The Effect of Crystallographic Orientation and Nanoscale Surface Morphology on Poly -Si/SiO x Contacts for Silicon Solar Cells

High-efficiency crystalline silicon (Si) solar cells require textured surfaces for efficient light trapping. However, passivation of a textured surface to reduce carrier recombination is difficult. Here, we related the electrical properties of cells fabricated on a KOH-etched, random pyramidal textured Si surface to nanostructure of the passivated contact and the textured surface morphology. The effects of both microscopic pyramidal morphology and nanoscale surface roughness on passivated contacts consisting of a polycrystalline Si (poly-Si) deposited on top of an ultrathin, 1.5-2.2 nm, SiO x layer is investigated. Using atomic force microscopy we show a pyramid face, which is predominantly a Si(111) plane to be significantly rougher than a polished Si(111) surface. This roughness results in a nonuniform SiOx layer as determined by transmission electron microscopy (TEM) of a poly-Si/SiO x contact. Our device measurements also show an overall more resistive, and hence thicker SiO x layer over the pyramidal surface as compared to a polished Si(111) surface, which we relate to increased roughness. Using electron-beam-induced current measurements of poly-Si/SiO x contacts we further show that the SiO x layer near the pyramid valleys is preferentially more conducting, and hence likely thinner than over pyramid tips, edges and faces. Hence, both the microscopic pyramidal morphology and nanoscale roughness lead to nonuniform SiO x layer, thus leading to poor poly-Si/SiO x contact passivation. Finally, we report >21% efficient and =80% fill factor front/back poly-Si/SiO x solar cells on both single-side and double-side textured wafers without the use of transparent conductive oxide layers and show that the poorer contact passivation on a textured surface is limited to boron-doped poly-Si/SiO x contacts.

14 SOLAR ENERGY↗
DOE OSTI2014

Physical model of the contact resistivity of metal-graphene junctions

While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Point contacts in encapsulated graphene

We present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming point-like contacts. The measured contact resistances are 0.5–1.5 kΩ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic field, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Non-Equilibrium Doping of Poly-Si:Ga/SiOx Passivating Contacts Solar Cells

In this contribution, we show that Ga-hyperdoped poly-Si/SiOx contacts are realized by pulsed laser annealing and post-hydrogenation. The motivation behind this work is to improve the inferior performance of boron-doped poly- Si/SiOx contacts when compared to the phosphorus-doped contacts. Here we used Ga as a novel p-type dopant to replace B, as B is known to accumulate at the interface between the oxide and the crystalline silicon and cause recombination. Due to a high diffusivity of Ga in oxide and a much higher segregation coefficient (Si:SiOx), Ga is shown to be immune to the oxide pileup phenomenon. However, Ga has a low solid solubility limit in Si (5x10^19 cm-3), which is not enough to form a low resistivity contact. To overcome this problem, we explored pulsed laser annealing via excimer laser by varying the laser energy densities and pulses. The passivation and electrical properties are studied systematically using photoluminescence (PL), secondary ion mass spectrometry (SIMS), and Van der Pauw-Hall measurements. We show an active Ga doping concentration above 1x10^20 cm^-3, which is above the solid solubility limit of Ga in Si. Good passivation quality is demonstrated with the highest implied Voc (iVoc) of 721 mV on single side polished samples. Furthermore, a low diode contact resistivity of ~22 m..omega.. cm^2 is obtained using Ti/Ag contacts, with minimal metal-to-semiconductor contact resistivity of 0.9 m..omega.. cm^2.

non-equilibrium doping↗
DOE OSTI2026

C‐Cracking of Brittle‐Material Spheres From Eccentric Hertzian Contact

Contact of brittle-material spheres can occur while they are manufactured, handled, or used in operation as roller elements or in deformably processed composite material. Statistically, the directional contact between two spheres will nearly always be oblique or eccentric in an unconfined and mobile sphere population. Although analyses of oblique contact exist, the portrayal of its maximum (tensile) first principal stress ( S 1 ) field is lacking. This information is needed for improved judgment of the prospect of crack initiation. Given these, the S 1 due to eccentric contact and subsequent crack initiation was analyzed using finite element analysis (FEA) and corroborative demonstration of c-crack creation. The FEA shows that an asymmetric S 1 field is created about the contact patch and is caused by superimposed shear intrinsic to eccentric contact. A crack will initiate if the maximum S 1 exceeds the material's tensile strength, and its field will cause the crack to propagate and arrest to form a C-shaped crack, or c-crack. C-crack initiation trends with lower applied forces, with greater amount of contact eccentricity, higher coefficient of friction, and smaller spherical radius. Finally, these metrics deserve recognition, especially when c-cracked brittle-material spheres are used in a system whose functionality or reliability is potentially compromised by the c-cracks.

Hertzian contact↗
DOE OSTI2019

Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers

Various methods for the formation of ohmic contacts to boron-doped δ layers in CVD-diamond epitaxial structures are investigated. In the first variant, an additional thin heavily doped layer was formed on the diamond surface to which an ohmic contact is formed. Then, the surface p{sup +} layer between the contact pads is etched out; therefore, the current in the structure flows only through a buried δ layer. In the second approach, the doped diamond selectively grows in the contact windows under a metallic mask after preliminary etching of the undoped diamond layer (cap) up to the δ layer. In this case, the heavily doped p{sup +} layer forms an end contact to the δ layer. These two variants differ in terms of the conditions of applicability, the complexity of the manufacturing technology, the value of the contact resistance, and can be used to solve problems in which it is necessary to have a different quality of the contacts, such as the formation of transistor structures or test cells for measuring physical characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Algebraic Multigrid with Filtering: An Efficient Preconditioner for Interior Point Methods in Large-Scale Contact Mechanics Optimization

Large-scale contact mechanics simulations are crucial in many engineering fields such as structural design and manufacturing. In the frictionless case, contact can be modeled by minimizing an energy functional; however, these problems are often nonlinear, nonconvex, and increasingly difficult to solve as mesh resolution increases. In this work, we employ a Newton-based interior-point (IP) filter line-search method, an effective approach for large-scale constrained optimization. While this method converges rapidly, each iteration requires solving a large saddle-point linear system that becomes ill-conditioned as the optimization process converges, largely due to IP treatment of the contact constraints. Such ill-conditioning can hinder solver scalability and increase iteration counts with mesh refinement. Here, to address this, we introduce a novel preconditioner, algebraic multigrid with filtering (AMGF), tailored to the Schur complement of the saddle-point system. Building on the classical AMG solver, commonly used for elasticity, we augment it with a specialized subspace correction that filters near null space components introduced by contact interface constraints. Through theoretical analysis and numerical experiments on a range of linear and nonlinear contact problems, we demonstrate that the proposed solver achieves mesh independent convergence and maintains robustness against the ill-conditioning that notoriously plagues IP methods. These results indicate that AMGF makes contact mechanics simulations more tractable and broadens the applicability of Newton-based IP methods in challenging engineering scenarios. More broadly, AMGF is well suited for problems, optimization or otherwise, where solver performance is limited by a low-dimensional subspace, such as those arising from localized constraints, interface conditions, or model heterogeneities. This makes the method widely applicable beyond contact mechanics and constrained optimization.

Mathematics and Computing↗
DOE OSTI2025

Characterization of Performance Degradation Mechanisms in Low-Cost High Throughput DI-O3 Layer for Passivated Contact Silicon Solar Cells

Characterization and mitigating performance limiting defects in Silicon (Si) PV is one of key areas to be addressed to improve PV hardware costs and energy yield in order to lower the levelized cost of energy (LCOE) of installed PV cost to $0.02/kWh. As Si PV cells efficiencies have surpassed 22% and approaching 23%, the recombination at the metal contacts have become the focus point to be addressed. Passivated contact technologies—having a heterojunction with a band-gap larger than silicon between the metal and silicon—have emerged as a great potential for future highand ultrahigh-efficiency solar cells, as it concurrently reduces recombination and increases carrier selectivity, by incorporating thin films within the contact structure. Passivated contact Si solar cell technologies use a wide variety of tunnel layers—playing a crucial role to passivate metal contacts and tunnel charge carriers—including stoichiometric silicon oxide (SiO 2 ) grown by thermal oxidation and Low-Pressure Chemical Vapor Deposition (LPCVD) technique and silicon oxide (SiO x ) by hot nitric acid. However, thorough investigations on understanding the failure and performance degradation mechanisms associated with tunnel layers are still limited to date. Unlocking those degradation characteristics in crucial tunnel layers could improve the reliability and energy yield of passivated contact Si solar cells. Besides, the technique of growing aforementioned tunneling layers are low throughput, and requires high temperature processes and/or a vacuum environment. In this project, we investigated the performance degradation mechanisms of a low-cost high-throughput ozonated oxide (DI-O 3 ) tunnel layer for the passivated contact Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Approaches to Metallization for Poly-Si/SiOx Passivated Contacts

Recent improvements in Si solar cell efficiency beyond 25% have used doped poly-Si/SiOx or a-Si:H passivated contacts, the former culminating in a 25.7% cell with a n-poly-Si/SiOx rear contact 1 that is fundamentally compatible with screen printing and firing. However, metallization of the <100 nm thick stack is challenging and can limit open-circuit voltage (Voc) 2, 3. The goal of the work presented here is to develop metallization routes for poly-Si/SiOx passivated contacts with acceptable contact resistivity and minimized Voc loss. This is approached through incremental as well as disruptive improvements to metal evaporation. We examine all aspects of the poly-Si/SiOx process chain that can contribute to contact performance, including poly-Si/SiOx properties, passivation routes, capping layers, and metal deposition methods and post-treatments. We also discuss how to best quantify the contact resistivity that exists while operating a solar cell at maximum power point. Finally, we present two novel approaches to contacting poly-Si/SiOx - a thermally evaporated ITO interlayer, and a transparent conducting adhesive.

14 SOLAR ENERGY↗
DOE OSTI2023

On Practical Aspects of Variational Consistency in Contact Dynamics

Usage of contact mechanics methodologies is a pervasive modeling requirement in dynamic simulations. While for some trivial problems, solutions taken from analytical geometry are available, use of a finite element framework is common to achieve formulation generality. This work explores two dynamic contact formulations: one based on the traditional node-to-segment (NTS) approach, and a variationally consistent segment-to-segment (STS) mortar formulation. The NTS formulation employed here enforces the constraints kinematically (i.e., the interpenetration is enforced to the solver tolerance), whereas the mortar approach uses Lagrange multipliers to enforce the contact constraints. Both approaches are implemented in the open-source finite element framework Multiphysics Object-Oriented Simulation Environment (MOOSE). The results highlight two relevant contact-interface-related dynamic phenomena in finite element simulations. First, stabilization of contact constraints is discussed, taking into account the evolution of the total energy in a benchmark problem. Second, the influence of finite element discretization on both of the aforementioned contact formulations is analyzed by exercising a large-deformation example with continuous relative sliding. Variationally consistent contact approaches such as the mortar formulation lead to improved energy preservation and avoid spurious excitation of the system's frequencies. This is especially relevant in settings where inertia and vibrations are of importance.

42 ENGINEERING↗
DOE OSTI2025

Methods to Observe Tribological Failures in Self-Mated Steel Contacts

Scuffing, a type of wear found in highly stressed or poorly lubricated contacts, is characterized by a rapid increase in friction and severe plastic deformation of the near-surface material. Scuffing has proven difficult to study because it initiates unpredictably, progresses rapidly, and typically develops within an inaccessible contact interface. Although there have been successful in-situ studies of scuffing in real-time, the transparent counter body needed for these studies changes the interactions between the surfaces and the lubricant, which affects the scuffing process in unknown ways. This paper describes the development of X-ray-compatible tribometry to study the scuffing of self-mated steels in-situ and in real-time. The method uses a crossed cylinders configuration with a thin (500 μm thick) stationary component and a small (≈200 μm) contact width to maximize X-ray interactions with atoms within the stress field generated by the contact. The resulting instrument and method are used to benchmark the scuffing response of self-mated 52,100 steel under tribologically challenging ‘oil-off’ lubrication conditions. The results demonstrate reliable scuffing in this configuration despite the relatively small contact areas and loads used. Following scuffing, gross plastic deformation was observed on both surfaces along with significant subsurface grain refinement and flow only on the stationary surface, which experienced constant contact. Interestingly, high friction initiated at specific locations of the migratory surface, which experienced intermittent contact, and then propagated across the track over time, suggesting that local conditions of the migratory surface dominated friction leading into the failure event.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Wear on Surface Crack Propagation in Rail–Wheel Wet Contact

The interaction between wear and rolling contact fatigue in wet contact was investigated by means of experiments on a two-disk test bench. Specimens of various railway wheel steels were coupled with specimens of the same rail steel, subjected to rolling and sliding wet contact with varying sliding/rolling ratio. Some tests with a dry rolling–sliding contact phase preceding wet contact were carried out as well (dry–wet tests). The pressurization of the fluid entrapped in the surface cracks was the cause of a rapid and severe damage in the dry–wet tests, due to the nucleation of surface cracks by ratcheting in the dry phase, which subsequently propagate in the wet phase. In the wet tests, the fluid pressurization effect was much mitigated due to the absence of initial surface cracks; the specimens subjected to higher sliding/rolling ratio showed the best performance against rolling contact fatigue, due to the effect of wear in reducing the length of surface cracks. A model for assessing the interaction between wear and rolling contact fatigue was proposed, based on the correction of the classical Paris law for crack propagation by taking into account the effect of wear on crack length reduction. The application of the model to the experimental tests allowed finding a correlation between the model predictions and the occurrence of fatigue failure.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Wear Mechanisms in Contacts Involving Slippers in Axial Piston Pumps: A Multi-Technical Analysis

Axial piston pumps are widely used in actuation as power conversion systems, especially in aeronautics. Even though they combine compactness and efficiency, wear of their parts reduces their lifespan. Studies on these pumps often consist in analytic or numerical analyses of lubricated contact between their components. Piston slippers are in tribological contacts with swashplate, pistons and slipper retainer. This study aims to understand wear mechanisms in the contacts involving this central component. An experimental multi-technical analysis of helicopter pumps parts after several functioning times is presented. To determine wear mechanisms, worn surfaces are observed with SEM. 3D surface roughness measurements provide surface topography. Contact conditions and consequently wear severity and mechanisms differ from one contact to another. Detached coarse carbides from the swashplate surface act as an abrading third-body against slippers and swashplate. Debris generated in this contact is carried by the fluid to the other contacts. Although pistons are made of the same steel as swashplate, there is no carbide detachment and wear comes from debris polluting the fluid. Slipper retainer is almost not worn, and debris causes abrasive wear and craters generation in the slippers.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A multiscale model to understand the interface chemistry, contacts, and dynamics during lithium stripping

A reversible Li-metal electrode, paired with a solid electrolyte, is critical for attaining higher energy density and safer batteries beyond the current lithium-ion cells. A stable stripping process may be even harder to attain as the stripping process will remove Li-atoms from the surface, and naturally reduce surface contact area, if not self-corrected by other mechanisms, such as diffusion and plastic deformation under an applied external stack pressure. Here, we capture these mechanisms occurring at multiple length- and time- scales, i.e., interface interactions, vacancy hopping, and plastic deformation, by integrating density functional theory (DFT) simulations, kinetic Monte Carlo (KMC), and continuum finite element method (FEM). By assuming the self-affine nature of multiscale contacts, we predict the steady-state contact area as a function of stripping current density, interface wettability, and stack pressure. We further estimate the exponential increase of overpotential due to contact area loss to maintain the same stripping current density. We demonstrate that a lithiophilic interface requires less stack pressure to reach the same steady-state contact area fraction than a lithiophobic interface. A “tolerable steady-state” contact area loss for maintaining stable stripping is estimated at 20 %, corresponding to a 10 % increase in overpotential. To constrain contact loss within the tolerance, the required stack pressure is 0.1, 0.5, and 2 times the yield strength of lithium metal for three distinct interfaces, lithiophilic Li/lithium oxide(Li2O), Li/lithium lanthanum zirconium oxide(LLZO), and lithiophoblic Li/lithium fluoride(LiF), respectively. The modeling results agree with experiments on the impact of the stack pressure quantitatively, while the discrepancy in stripping rate sensitivity is attributed to the simplifying interface interaction in our simulations. Overall, this multiscale simulation framework demonstrates the importance of electrochemical-mechanical coupling in understanding the dynamics of the Li/SE interface during stripping.

Feng, Min↗
DOE OSTI2024

Thermodynamic driving forces in contact electrification between polymeric materials

Abstract Contact electrification, or contact charging, refers to the process of static charge accumulation after rubbing, or even simple touching, of two materials. Despite its relevance in static electricity, various natural phenomena, and numerous technologies, contact charging remains poorly understood. For insulating materials, even the species of charge carrier may be unknown, and the direction of charge-transfer lacks firm molecular-level explanation. Here, we use all-atom molecular dynamics simulations to investigate whether thermodynamics can explain contact charging between insulating polymers. Based on prior work suggesting that water-ions, such as hydronium and hydroxide ions, are potential charge carriers, we predict preferred directions of charge-transfer between polymer surfaces according to the free energy of water-ions within water droplets on such surfaces. Broad agreement between our predictions and experimental triboelectric series indicate that thermodynamically driven ion-transfer likely influences contact charging of polymers. Furthermore, simulation analyses reveal how specific interactions of water and water-ions proximate to the polymer-water interface explain observed trends. This study establishes relevance of thermodynamic driving forces in contact charging of insulators with new evidence informed by molecular-level interactions. These insights have direct implications for future mechanistic studies and applications of contact charging involving polymeric materials.

36 MATERIALS SCIENCE↗