A floating zone technique for the growth of carbide single crystals
Single crystals of carbides by floating zone technique
Hollox, G. E.↗
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Microstructure and mechanical behavior of carbides
Microstructure and mechanical properties of carbides
Hollox, G. E.↗
Influence of octahedral subcells on the electrical properties and bonding characteristics of molybdenum carbides.
Crystal lattice octahedral subcells role in Mo carbides electrical and bonding characteristics from heat capacity and superconducting transition temperature measurements
Gardner, W.↗
Hall coefficient of tantalum carbide as a function of carbon content and temperature.
Hall coefficient and electrical resistivity of tantalum carbide as function of carbon content and temperature
Dolloff, R. T.↗
The effect of refractory elements on the stability of complex carbides in Ni-base superalloys.
Refractory elements effect on complex carbides formation in Ni base superalloys at intermediate temperatures
Dreshfield, R. L.↗
Low temperature heat capacities of superconducting molybdenum carbides.
Low temperature heat capacities for molybdenum carbides studied for similarities of thermodynamic and superconducting properties
Toth, L. E.↗
Low temperature heat capacities of superconducting niobium and tantalum carbides.
Low temperature heat capacities of superconducting niobium and tantalum carbides measured for carbon concentration and crystal structure effects
Chang, Y. A.↗
Silicon carbide diode for increased light output
Transition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.
Griffiths, L. B.↗
Metal carbide-graphite composites Summary report no. 2, 1 Aug. 1967 - 31 Aug. 1968
Controlling mechanical properties of hot pressed metal carbide-graphite composite materials
Source record↗
Development of an experimental silicon carbide backward diode operable to 1000 deg K
Figures of merit for experimental silicon carbide backward diode operable to 1000 degrees K
Farrell, R.↗
Growth of 2H silicon carbide crystals
Optimal growths of silicon carbide polytype crystals by methyltrichlorosilane reduction
Powell, J. A.↗
Dynamic strain aging in carbide strengthened molybdenum alloys
Dynamic strain aging in carbide strengthened molybdenum alloys
Raffo, P. L.↗
Research and development program to produce a silicon carbide cold cathode /hot electron/ emitter Final report, 21 May 1968 - 28 Feb. 1969
Development of silicon carbide hot electron emitter
Oman, R. M.↗
A floating zone technique for the growth of carbide single crystals
Floating zone technique for vanadium carbide single crystal growth
Hollox, G. E.↗
Reactive deposition of cubic silicon carbide.
Cubic /beta/ silicon carbide films deposition by volatilization in presence of acetylene
Haq, K. E.↗
Copper-titanium eutectic alloy improves electrical and mechanical contact to silicon carbide
Contact preparation at low temperatures is possible with the use of a copper-titanium eutectic alloy. Contacts formed with this alloy are ohmic on p-type silicon carbide and rectifying on n-type.
Shier, J. S.↗
Low temperature specific heat of vanadium carbide
Low temperature specific heat measurements on vanadium carbide crystals
Finegold, L.↗
Production of high purity silicon carbide Patent
Producing high purity silicon carbide on carbon base by hydrogen reduction of silicon tetrachloride
Jewell, R. A.↗