Strengths of sulfur-basalt concretes
Sulfur used in bonding high strength basalt aggregates to form sulfur-basalt concretes
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Sulfur used in bonding high strength basalt aggregates to form sulfur-basalt concretes
Calibrator generates accurate flow velocities over wide range of gas pressure, temperature, and composition. Both pressure and flow velocity can be maintained within 0.25 percent. Instrument is essentially closed loop hydraulic system containing positive displacement drive.
Procedure for segmenting lead telluride and silicon germanium thermoelectric elements to obtain composite elements effective over wide temperature range
The selection and design of a time/frequency collision avoidance system for use in general aviation aircraft is discussed. The modifications to airline transport collision avoidance equipment which were made to produce the simpler general aviation system are described. The threat determination capabilities and operating principles of the general aviation system are illustrated.
Thick film silicon ribbons were produced by means of the edge-defined, film-fed growth (EFG) technique. EFG is a process by which single crystals may be grown having a shape controlled by the outside dimensions of a die, the growth taking place from an extremely thin film of liquid fed by capillary action from a crucible below. The principal problem to be overcome in the application of this process to the growth of thick film silicon ribbon relates to the material, such as the shaping die. For the method to operate, this die material must be wet by the liquid silicon. To preserve semiconductor quality, the liquid silicon must not react significantly with the die material. The most promising die material for this application appears to be SiC and SiC-SiO2 admixture. In this case good wetting occurs between the molten silicon and the SiC. C is a relatively unharmful contaminant of Si and additions of quartz to SiC are found to decrease the extent of reaction.
Silicon ribbon growth experiments were conducted using orifices (dies) fabricated from SiC-SiO2 mixtures, fused quartz, SiC, and fine-grained, high density graphite. The best results were obtained from graphite dies. A number of different approaches was tried in modifying the thermal gradient in the dies and in holding the dies. The best results here were obtained from a 0.25-in. thick Mo disc holding a graphite die directly and fitting the die quite closely. Ribbon growths as wide as 9 mm were obtained, while the longest ribbon was 450 x 3.5 x 0.5 mm. Resistivities of ribbons grown from graphite dies have been measured over the range of 0.03 to 1.6 ohm-cm. Some thoughts and literature findings are presented regarding refractory oxide materials as potential orifices.
The effects of various oxide additives on the volume change on melting, the surface tension, and the viscosity of liquid Al2O3 were studied. Additives of Sm2O3, MgO, and Y2O3 which form solid solutions, compounds, and multiphase solids with Al2O3 were studied. A review of the property data for Al2O3 and Al2O3 containing oxide additives is presented. Oxide additives to Al2O3 reduce the volume change on melting and with the exception of SiO2 lower the viscosity; surface tensions change with oxide additives, but changes vary with different container material. Viscosity and volume change on melting appeared to be significantly more important for studying the properties of liquid oxides than surface tension. Supercooling of 270 K of yttrium aluminum garnet was observed.
Hall mobility measurements on a number of single crystal silicon ribbons grown from graphite dies have shown some ribbons to have mobilities consistent with their resistivities. The behavior of other ribbons appears to be explained by the introduction of impurities of the opposite sign. Growth of a small single crystal silicon ribbon has been achieved from a beryllia dia. Residual internal stresses of the order of 7 to 18,000 psi have been determined to exist in some silicon ribbon, particularly those grown at rates in excess of 1 in./min. Growth experiments have continued toward definition of a configuration and parameters to provide a reasonable yield of single crystal ribbons. High vacuum outgassing of graphite dies and evacuation and backfilling of growth chambers have provided significant improvements in surface quality of ribbons grown from graphite dies.
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Description of a method for calculating the photoionization cross section of magnesium, using the technique of configuration reaction in the continuum. The two series of levels which give rise to autoionization near the threshold are explicitly included in the calculation. The described method is a logical extension of the basic technique developed by Atlick and Moore (1966) for similar calculations in application to helium.
The research which was directed toward finding an improved die material is reported. Wetting experiments were conducted with various materials to determine their compatibility with silicon. Work has also continued toward the development of quartz as a die material as new techniques have provided more optimistic results than observed in the past. As a result of the thermal modification previously described, improvements in growth stability have contributed to an increase in ribbon quality.
An apparatus for establishing a flow of fluid mass, such as gas, having a known velocity is introduced. The apparatus is characterized by an hermetically sealed chamber conforming to a closed-loop configuration and including a throat and a plurality of axially displaceable pistons for sweeping through the throat a stream of gas including a core and an unsheared boundary layer. Within the throat there is a cylindrical coring body concentrically related to the throat for receiving the core, and a chamber surrounding the cylindrical body for drawing off the boundary layer, whereby the velocity of the core is liberated from the effects of the velocity of the boundary layer.
One inch wide silicon ribbons up to 14 inches long have been produced from graphite dies. Several different techniques have been employed to improve the semiconductor purity of silicon. This has resulted in a general increase in quality although the techniques involved have not been optimized. The power factor of uncoated ribbon solar cells produced for material evaluation has increased to approximately 75% of those evaluation cells made from commercial silicon. The present limitation is believed due to low lifetime. Additional work has continued with new die materials; however, only composite dies of SiO2 and C show significant potential at this time.
Recent advances in the application of the edge-defined, film-fed growth (EFG) method to silicon ribbon are described. Ribbons up to 2 x 40 cm and 1 x 70 cm in width and length, respectively, have been grown at rates of 1 to 2.5 cm/min. The electrical properties of typical undoped ribbons are resistivity of 0.5 to 5 ohm-cm p-type, and hole mobility of 200 to 350 sq cm/V-sec. Ribbon growth speeds are consistent with the use of EFG silicon for terrestrial power.
A model is proposed which explains the penetrative wear of a soft material by a harder one. Three distinct modes of penetration are present depending on the applied load. During the most severe penetration plate-like wear debris is ejected at the leading edge of the slider. A series of slip line fields is presented to approximate this debris formation process. Plastic constraint is seen to be an important factor in wear particle formation.
A description is given of a six-arm conical scanner which was selected to provide a continuous line-of-sight scan. Two versions of the instrument are considered. The two versions differ in their weight. The weight of the heavy version is 600 lbs. A light weight design which employs beryllium and aluminum optical components weighs only 350 lbs. A multiplexer and analog-to-digital converter are to be incorporated into the design. Questions of instrument performance are also discussed.
Continuous growth methodology for silicon solar cell ribbons deals with capillary effects, die effects, thermal effects and crystal shape effects. Emphasis centers on the shape of the meniscus at the ribbon edge as a factor contributing to ribbon quality with respect to defect densities. Structural and electrical characteristics of edge defined, film-fed grown silicon ribbons are elaborated. Ribbon crystal solar cells produce AMO efficiencies of 6 to 10%.
The growth and characteristics of edge defined, film fed grown (EFG) silicon ribbons are discussed. Factors involved in the growth of continuous lengths of 1 in. wide ribbons are examined. The structural and electrical characteristics of the ribbons have been studied and the results are presented. Solar cells have been fabricated using the ribbon crystals and typical AMO efficiencies of 6 to 10% have been realized.