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At least 325 records · Page 18

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NASA NTRS2005

Ka-Band Wide-Bandgap Solid-State Power Amplifier: Hardware Validation

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solid-state power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents proof-of-concept hardware used to validate power-combining technologies that may enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results in previous articles [1-3] indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. Previous architecture performance analyses and estimates indicate that the proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This combining efficiency would correspond to MMIC requirements of 5- to 10-W output power and >48 percent PAE. In order to validate the performance estimates of the three proposed architectures, measurements of proof-of-concept hardware are reported here.

Epp, L.↗

NASA NTRS2007

Investigating Holey Metamaterial Effects in Terahertz Traveling-Wave Tube Amplifier

Applying subwavelength holes to a novel traveling-wave tube amplifier is investigated. Plans to increase the on-axis impedance are discussed as well as optimization schemes to achieve this goal. Results suggest that an array of holes alone cannot significantly change the on-axis electric field in the vicinity of the electron beam. However, models of a beam tunnel with corrugated walls show promise in maximizing the amplifier s on-axis impedance. Additional work is required on the subject, and suggestions are made to determine research directions.

Starinshak, David P.↗

NASA NTRS1992

Monolithic semiconductor light emitter and amplifier

A semiconductor light emitter comprising a substrate of a semiconductor material having a pair of opposed surfaces and a body of semiconductor material on one of the surfaces. The body includes a pair of clad layers of opposite conductivity types having an intermediate quantum well region therebetween. The clad layers are of a semiconductor material which forms a heterojunction with the material of the quantum well region. The clad layers and the quantum well region form a waveguide which extends along the body. A plurality of gain sections are formed in the body spaced along and optically coupled by the waveguide. Each of the gain sections is adapted to generate light therein when a voltage is placed thereacross. One of the gain section has gratings at each end thereof which are adapted to reflect light back into the one gain section and thereby create a beam of light. The grating between the one gain section and an adjacent gain section is adapted to allow some of the light generated in the one gain section to pass therethrough along the waveguide to the next gain section. Each of the other gain sections have gratings adjacent an end opposite the first gain sections. The periods of the grating are such that no self-oscillation of the light in the waveguide occurs so that each of the other gain sections serve as single pass amplifiers. The gratings also direct the amplified light from the other gain sections out of the body.

Carlson, Nils W.↗

NASA NTRS2008

Conductively Cooled Ho:Tm:LuLiF Laser Amplifier

A conductively-cooled Ho:Tm:LuLiF laser head can amplify 80mJ/340ns probe pulses into 400mJ when the pump pulse energy is close to amplified spontaneous emission (ASE) threshold, 5.6J. For a small signal, the double-pass amplification exceeds 25.

Bai, Yingxin↗

NASA NTRS2008

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Patterson, Richard↗

NASA NTRS2009

Ultra-Broad-Band Optical Parametric Amplifier or Oscillator

A concept for an ultra-broad-band optical parametric amplifier or oscillator has emerged as a by-product of a theoretical study in fundamental quantum optics. The study was originally intended to address the question of whether the two-photon temporal correlation function of light [in particular, light produced by spontaneous parametric down conversion (SPDC)] can be considerably narrower than the inverse of the spectral width (bandwidth) of the light. The answer to the question was found to be negative. More specifically, on the basis of the universal integral relations between the quantum two-photon temporal correlation and the classical spectrum of light, it was found that the lower limit of two-photon correlation time is set approximately by the inverse of the bandwidth. The mathematical solution for the minimum two-photon correlation time also provides the minimum relative frequency dispersion of the down-converted light components; in turn, the minimum relative frequency dispersion translates to the maximum bandwidth, which is important for the design of an ultra-broad-band optical parametric oscillator or amplifier. In the study, results of an analysis of the general integral relations were applied in the case of an optically nonlinear, frequency-dispersive crystal in which SPDC produces collinear photons. Equations were found for the crystal orientation and pump wavelength, specific for each parametric-down-converting crystal, that eliminate the relative frequency dispersion of collinear degenerate (equal-frequency) signal and idler components up to the fourth order in the frequency-detuning parameter

Strekalov, Dmitry↗

NASA NTRS2007

MMIC Amplifier Produces Gain of 10 dB at 235 GHz

The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.

Dawson, Douglas↗

NASA NTRS2007

MMIC Amplifiers for 90 to 130 GHz

This brief describes two monolithic microwave integrated-circuit (MMIC) amplifier chips optimized to function in the frequency range of 90 to 130 GHz, covering nearly all of F-band (90 - 140 GHz). These amplifiers were designed specifically for local-oscillator units in astronomical radio telescopes such as the Atacama Large Millimeter Array (ALMA). They could also be readily adapted for use in electronic test equipment, automotive radar systems, and communications systems that operate between 90 and 130 GHz.

Samoska, Lorene↗

NASA NTRS2011

Demonstration of Multi-Gbps Data Rates at Ka-Band Using Software-Defined Modem and Broadband High Power Amplifier for Space Communications

The paper presents the first ever research and experimental results regarding the combination of a software-defined multi-Gbps modem and a broadband high power space amplifier when tested with an extended form of the industry standard DVB-S2 and LDPC rate 9/10 FEC codec. The modem supports waveforms including QPSK, 8-PSK, 16-APSK, 32-APSK, 64-APSK, and 128-QAM. The broadband high power amplifier is a space qualified traveling-wave tube (TWT), which has a passband greater than 3 GHz at 33 GHz, output power of 200 W and efficiency greater than 60 percent. The modem and the TWTA together enabled an unprecedented data rate at 20 Gbps with low BER of 10(exp -9). The presented results include a plot of the received waveform constellation, BER vs. E(sub b)/N(sub 0) and implementation loss for each of the modulation types tested. The above results when included in an RF link budget analysis show that NASA s payload data rate can be increased by at least an order of magnitude (greater than 10X) over current state-of-practice, limited only by the spacecraft EIRP, ground receiver G/T, range, and available spectrum or bandwidth.

Simons, Rainee N.↗

NASA NTRS2006

MMIC Power Amplifier Puts Out 40 mW From 75 to 110 GHz

A three-stage monolithic microwave integrated circuit (MMIC) W-band amplifier has been constructed and tested in a continuing effort to develop amplifiers as well as oscillators, frequency multipliers, and mixers capable of operating over wide frequency bands that extend above 100 GHz. There are numerous potential uses for MMICs like these in scientific instruments, radar systems, communication systems, and test equipment operating in this frequency range.

Samoska, Lorene↗

NASA NTRS2003

Mechanical Amplifier for a Piezoelectric Transducer

A mechanical amplifier has been devised to multiply the stroke of a piezoelectric transducer (PZT) intended for use at liquid helium temperatures. Interferometry holds the key to high angular resolution imaging and astrometry in space. Future space missions that will detect planets around other solar systems and perform detailed studies of the evolution of stars and galaxies will use new interferometers that observe at mid- and far-infrared wavelengths. Phase-measurement interferometry is key to many aspects of astronomical interferometry, and PZTs are ideal modulators for most methods of phase measurement, but primarily at visible wavelengths. At far infrared wavelengths of 150 to 300 m, background noise is a severe problem and all optics must be cooled to about 4 K. Under these conditions, piezos are ill-suited as modulators, because their throw is reduced by as much as a factor of 2, and even a wavelength or two of modulation is beyond their capability. The largest commercially available piezo stacks are about 5 in. (12.7 cm) long and have a throw of about 180 m at room temperature and only 90 m at 4 K. It would seem difficult or impossible to use PZTs for phase measurements in the far infrared were it not for the new mechanical amplifier that was designed and built.

Moore, James↗

NASA NTRS2012

Ka-Band Waveguide Three-Way Serial Combiner for MMIC Amplifiers

In this innovation, the three-way combiner consists internally of two branch-line hybrids that are connected in series by a short length of waveguide. Each branch-line hybrid is designed to combine input signals that are in phase with an amplitude ratio of two. The combiner is constructed in an E-plane split-block arrangement and is precision machined from blocks of aluminum with standard WR-28 waveguide ports. The port impedances of the combiner are matched to that of a standard WR-28 waveguide. The component parts include the power combiner and the MMIC (monolithic microwave integrated circuit) power amplifiers (PAs). The three-way series power combiner is a six-port device. For basic operation, power that enters ports 3, 5, and 6 is combined in phase and appears at port 1. Ports 2 and 4 are isolated ports. The application of the three-way combiner for combining three PAs with unequal output powers was demonstrated. NASA requires narrow-band solid-state power amplifiers (SSPAs) at Ka-band frequencies with output power in the range of 3 to 5 W for radio or gravity science experiments. In addition, NASA also requires wideband, high-efficiency SSPAs at Ka-band frequencies with output power in the range of 5 to 15 W for high-data-rate communications from deep space to Earth. The three-way power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA s deep-space frequency band.

Wintucky, Edwin G.↗

NASA NTRS2013

Extended Characterization of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

Collected data for both common-source and common-gate amplifiers is presented in this paper. Characterizations of the two amplifier circuits using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed with wider input frequency ranges and varying device sizes compared to earlier characterizations. The effects of the ferroelectric layer's capacitance and variation load, quiescent point, or input signal on each circuit are discussed. Comparisons between the MFSFET and MOSFET circuit operation and performance are discussed at length as well as applications and advantages for the MFSFETs.

Hunt, Mitchell↗

NASA NTRS2014

Dispersion-Engineered Traveling Wave Kinetic Inductance Parametric Amplifier

A traveling wave kinetic inductance parametric amplifier comprises a superconducting transmission line and a dispersion control element. The transmission line can include periodic variations of its dimension along its length. The superconducting material can include a high normal state resistivity material. In some instances the high normal state resistivity material includes nitrogen and a metal selected from the group consisting of titanium, niobium and vanadium. The traveling wave kinetic inductance parametric amplifier is expected to exhibit a noise temperature below 100 mK/GHz.

Zmuidzinas, Jonas↗

NASA NTRS2013

Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers

We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

High Electron Mobility Transistors (HEMTs)↗

NASA NTRS2018

Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

High gain Erbium Doped Fiber Amplifiers (EDFAs) are vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random, spontaneous Q-switched (SQS) pulses with high peak power, i.e. giant pulses. Giant pulses can damage either the components within a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on the evolution of normal pulses into giant pulses, and provide results on the transient effects of giant pulses on an amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

Li, Stephen X.↗

NASA NTRS2018

Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

High gain Erbium Doped Fiber Amplifiers (EDFAs), while revolutionizing optical communications, remain vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random pulses with high peak power, i.e. giant pulses. Giant pulses can damage the components in a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on conditions under which normal pulses evolve into giant pulses, and provide results on the transient effects of giant pulses on amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

Li, Stephen X.↗

NASA NTRSDate not supplied

Efficient Power Amplifiers for Radio Science, Remote Sensing, and Space Communications

The paper presents the development of high efficiency traveling-wave tube power amplifiers at K-band, Ka-band, and Q-band frequencies for radio science, remote sensing, and space communications. The saturated output power of these amplifiers is in the range of 40 to 200 watts and the corresponding efficiency is in the range of 45 to 60%.

Rainee N. Simons↗