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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Low dimensional GaAs/air vertical microcavity lasers

We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Observed damage during Argon gas cluster depth profiles of compound semiconductors

Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-κ dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025 nm/min (3.95 × 10{sup −2} amu/atom in ion) for 6 keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method, is proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Carrier transfer from InAs quantum dots to ErAs metal nanoparticles

Erbium arsenide (ErAs) is a semi-metallic material that self-assembles into nanoparticles when grown in GaAs via molecular beam epitaxy. We use steady-state and time-resolved photoluminescence to examine the mechanism of carrier transfer between indium arsenide (InAs) quantum dots and ErAs nanoparticles in a GaAs host. We probe the electronic structure of the ErAs metal nanoparticles (MNPs) and the optoelectronic properties of the nanocomposite and show that the carrier transfer rates are independent of pump intensity. This result suggests that the ErAs MNPs have a continuous density of states and effectively act as traps. The absence of a temperature dependence tells us that carrier transfer from the InAs quantum dots to ErAs MNPs is not phonon assisted. We show that the measured photoluminescence decay rates are consistent with a carrier tunneling model.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Local emission spectroscopy of surface micrograins in A{sup III}B{sup V} semiconductors

The density-of-states spectra and the parameters of levels of electron states in locally chosen surface micrograins of indium antimonide and arsenide and gallium arsenide are studied with a tunneling electron microscope in the field-emission mode of measurements. By correlating the current–voltage characteristics with the formula for the probability of emission via levels, the activation energies of the levels (ψ) and the lifetimes of electrons at the levels (τ) are determined. Two types of levels for electron localization are identified. These are levels in the micrograin bulk (ψ ≈ 0.75, 1.15, and 1.59 eV for n-InSb, n-InAs, and n-GaAs, respectively; τ ~ 10{sup –8}–10{sup –7} s) and in the surface region of an i-InSb micrograin (ψ ~ 0.73, 1.33, 1.85, 2.15, 5.1 eV; τ ≈ 5 × 10{sup –8}–3 × 10{sup –7} s). A physical model involving the Coulomb-interaction-induced localization of light electrons and their size quantization determined by the electron effective mass, energy, and concentration and by the surface curvature of the micrograin is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Mechanism and Features of Field Emission in Semiconductors

The field electron emission from individual grains on the surface of Si and III–V semiconductors, namely, gallium arsenide, indium arsenide, and indium antimonide is investigated by scanning tunneling microscopy. From the correspondence of the functional dependence of the I–V characteristic to the theory, the emission mechanism is determined as direct tunneling through a depleted or enriched subsurface layer at the voltages V < 1 V and the tunneling emission from the surface electronic states at the voltages V > 1 V. A field-emission threshold of (1–5) × 10{sup 6} V/cm is obtained, which is significantly lower than the values for metals and carbon. The determining factors of this emission mechanism are the Schottky effect, the localization and size quantization of “light” electrons in the surface area of III–V semiconductors, and the presence of a subsurface depletion layer in silicon. According to the data obtained for the values of the field-emission threshold, indium antimonide in the form of submicron grain particles is the most efficient field emitter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

Current–voltage (I–V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I–V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2012

New type of possible high-pressure polymorphism in NiAs minerals in planetary cores

The nickel arsenide (B81) and related crystal structures are among the most important crystallographic arrangements assumed by Fe and Ni compounds with light elements such as Si, O, S, and P, expected to be present in planetary cores. Despite the simple structure, some of these materials like troilite (FeS) exhibit complex phase diagrams and rich polymorphism, involving significant changes in interatomic bonding and physical properties. NiP (oP16) represents one of the two principal structure distortions found in the nickel arsenide family and is characterized by P–P bonding interactions that lead to the formation of P2 dimers. In the current study, the single-crystal synchrotron X-ray diffraction technique, aided by first principles density functional theory (DFT) calculations, has been applied to examine the compression behavior of NiP up to 30 GPa. Two new reversible displacive phase transitions leading to orthorhombic high-pressure phases with Pearson symbols oP40 and oC24 were found to occur at approximately 8.5 and 25.0 GPa, respectively. The oP40 phase has the primitive Pnma space group with unit cell a = 4.7729(5) Å, b = 16.6619(12) Å, and c = 5.8071(8) Å at 16.3(1) GPa and is a superstructure of the ambient oP16 phase with multiplicity of 2.5. The oC24 phase has the acentric Cmc21 space group with unit cell a = 9.695(6) Å, b = 5.7101(9) Å, and c = 4.7438(6) Å at 28.5(1) GPa and is a superstructure of the oP16 phase with multiplicity of 1.5. DFT calculations fully support the observed sequence of phase transitions. The two new phases constitute logical next stages of P sublattice polymerization, in which the dilution of the P3 units, introduced in the first high-pressure phase, decreases, leading to compositions of Ni20(P3)4(P2)4 and Ni12(P3)4, and provide important clues to understanding of phase relations and transformation pathways in the NiAs family.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Non-resonant Microwave Absorption and Boundary Current Response of Ba{sub 0.34}K{sub 0.64}Fe{sub 2}As{sub 2} Superconducting Single Crystals

Boundary current response of Ba{sub 0.34}K{sub 0.64}Fe{sub 2}As{sub 2} (BaK122) single crystals was probed by non-resonant microwave absorption (NRMA) as a function of 100-KHz modulation field at an intermediate temperature, namely, 25 K, which is 10 K below the actual T{sub c}. The measurements were done for both field parallel and perpendicular to the iron arsenide plane configuration. A weak anisotropic effect is noted. However, it is observed that the boundary current response depends on the modulation field value and it increases as we increase the modulation field value from 1 to 9 G. Further, this boundary current response strongly depends on the microwave power. We have shown that these modulation field and microwave power dependence of the boundary current response of NRMA signals in BaK122 iron arsenide crystal can be qualitatively understood through the Dulcic model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural investigation of the C-O complex in GaAs

A carbon-oxygen complex occurring in gallium arsenide crystals after annealing at around 700 °C is studied. Fourier transform infrared absorption measurements on the associated vibrational band at 2060 cm-1 under uniaxial stress reveal that the center has tetragonal symmetry. From the intensity of the {sup 18}O-related satellite band it is concluded that four oxygen atoms are involved. Ab initio local density calculations show that a tetragonal CO{sub 4} molecule forms a stable entity in the gallium arsenide lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Pressure-induced phase coexistence in BaFe{sub 1.8}Co{sub 0.2}As{sub 2}

We report high-pressure powder synchrotron X-ray diffraction measurements of overdoped BaFe{sub 1.8}Co{sub 0.2}As{sub 2} under quasi-hydrostatic pressure up to 40.1 GPa. Our results indicate that a tetragonal (T) to collapsed tetragonal (CT) phase transition occurs at 16.8 GPa and the two phase coexist until 30 GPa, which has not been previously observed in iron arsenide compounds. Both the lattice parameters a and c show discontinuous change for the T and CT phases. The decrease of the c lattice parameter is as large as 12.2% owing to the uniaxial pressure effect. The axial ratio c/a of the T phase exhibits similar features to the other 122-type compounds below 16.8 GPa, whereas there is a very small increase with increasing pressure in the two phase coexistence region. Because of the relationship between the axial ratio and superconductivity, the abnormal expansion may be related to the sudden increase of the strength of antiferromagnetic spin fluctuations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Multi-spectral optical absorption in substrate-free nanowire arrays

A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Experimental study of the proposed super-thermal-conductor: BAs

Recent calculations predict a super-thermal-conductivity of ~2000 Wm -1 K -1 , comparable to that of diamond, in cubic boron arsenide (BAs) crystals, which may offer inexpensive insulators with super-thermal-conductivity for microelectronic device applications. We have synthesized and characterized here single crystals of BAs with a zinc blende cubic structure and lattice parameters of a = 4.7830(7) Å. A relatively high thermal conductivity of ~200 Wm -1 K -1 is obtained, close to those of best non-carbon crystal insulators, such as SiC, although still an order of magnitude smaller than the value predicted. Based on our XPS, X-ray single crystal diffraction, and Raman scattering results, steps to achieve the predicted super-thermal conductivity in BAs are proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Low-noise heterodyne receiver for electron cyclotron emission imaging and microwave imaging reflectometry

The critical component enabling electron cyclotron emission imaging (ECEI) and microwave imaging reflectometry (MIR) to resolve 2D and 3D electron temperature and density perturbations is the heterodyne imaging array that collects and downconverts radiated emission and/or reflected signals (50–150 GHz) to an intermediate frequency (IF) band (e.g. 0.1–18 GHz) that can be transmitted by a shielded coaxial cable for further filtering and detection. New circuitry has been developed for this task, integrating gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) mounted on a liquid crystal polymer (LCP) substrate. The improved topology significantly increases electromagnetic shielding from out-of-band interference, leads to 10× improvement in the signal-to-noise ratio, and dramatic cost savings through integration. The current design, optimized for reflectometry and edge radiometry on mid-sized tokamaks, has demonstrated >20 dB conversion gain in upper V-band (60-75 GHz). Implementation of the circuit in a multi-channel electron cyclotron emission imaging (ECEI) array will improve the diagnosis of edge-localized modes and fluctuations of the high-confinement, or H-mode, pedestal.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Features of the selective manganese doping of GaAs structures

The effect of technological parameters on the selective manganese doping of arsenide–gallium heterostructures fabricated by a combination of methods of MOS-hydride epitaxy and pulsed-laser deposition is investigated. As these parameters, the impurity content in the manganese δ layer and the structureformation temperature are used. It is established that the prepared structures demonstrate the highest electrical activity and have ferromagnetic properties at a growth temperature of ~400°C and an impurity content of no higher than 0.2–0.3 monolayers. Studying the grown structures by the methods of reflection spectroscopy, high-resolution transmission electron microscopy, and secondary-ion mass spectrometry shows that use of the above conditions in the case of pulsed laser deposition makes it possible to obtain arsenide–gallium structures, which have good crystalline quality, and manganese is concentrated in them within a thin (7–8 nm) layer without substantial diffusion-induced spreading and segregation.

36 MATERIALS SCIENCE↗