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NASA NTRS1995

The development of infrared detectors and mechanisms for use in future infrared space missions

The environment above earth's atmosphere offers significant advantages in sensitivity and wavelength coverage in infrared astronomy over ground-based observatories. In support of future infrared space missions, technology development efforts were undertaken to develop detectors sensitive to radiation between 2.5 micron and 200 micron. Additionally, work was undertaken to develop mechanisms supporting the imaging and spectroscopy requirements of infrared space missions. Arsenic-doped-Silicon and Antimony-doped-Silicon Blocked Impurity Band detectors, responsive to radiation between 4 micron and 45 micron, were produced in 128x128 picture element arrays with the low noise, high sensitivity performance needed for space environments. Technology development continued on Gallium-doped-Germanium detectors (for use between 80 micron and 200 micron), but were hampered by contamination during manufacture. Antimony-doped-Indium detectors (for use between 2.5 micron and 5 micron) were developed in a 256x256 pixel format with high responsive quantum efficiency and low dark current. Work began on adapting an existing cryogenic mechanism design for space-based missions; then was redirected towards an all-fixed optical design to improve reliability and lower projected mission costs.

Houck, James R.↗

NASA NTRS2003

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗

NASA NTRS2004

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗

NASA NTRS2005

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Blacksberg, Jordana↗

NASA NTRS2005

Performance test results of a skutterudite-based unicouple with a metallic coating

A performance test of a Skutterudite-based unicouple (MAY-04) with a metallic coating to suppress the sublimation of antimony from the legs near the hot junction is performed in vacuum (~ 9 x10-7 torr) for ~ 2,000 hours at hot and cold junction temperatures of 892.1 + 11.9 K and 316.1 + 5.5 K, respectively. The p-leg is made of CeFe3.5Co0.5Sb12 and the n-leg is made of CoSb3. Presented are the measured voltage-current characteristics, electrical power, open-circuit voltage, and Seebeck coefficients of the legs as functions of cumulative test time. Also presented is the estimate of the conversion efficiency, shortly (~ 96 hrs) after the start of test. To demonstrate the effectiveness of the metallic coating, the measurements for MAY-04 are compared with those of two uncoated unicouples of the same leg materials (MAR-03 and JUN-03), which had been tested earlier. The cross-sectional areas of the legs in MAY-04 are larger than those in MAR-03 and JUN-03, tested in argon cover gas at ~ 0.051-0.068 MPa for 450 and 1200 hours, respectively. The open circuit voltage, Voc (204 mV) of MAY-04 at Beginning-Of-Test (BOT) is almost the same as that of MAR-03, but higher than that of JUN-03 (~180 mV). Although the argon gas effectively decreased antimony loss from legs of MAR-03 and JUN-03, marked degradations in performance occurred with time in these tests. Conversely, the metallic coating in MAY-04 effectively reduced the performance degradation with cumulative test time. The estimated peak efficiency of MAY-04, shortly after BOT (10.65%) is only ~ 0.37 percentage point lower than the theoretical value, assuming zero side heat losses and zero contact resistance per leg. The peak power of MAY- 04 decreased by only ~12%, from its BOT value of ~1.6 We to ~ 1.4 We after ~ 2,000 of cumulative testing

Caillat, Thierry↗

NASA NTRS2022

Un-Numbered Operational Areas PRL 229 Railroad Tie Disposal Area Pond Confirmation Sampling Report

This Confirmatory Sampling (CS) Report (CSR) was prepared for the National Aeronautics and Space Administration (NASA), Kennedy Space Center (KSC), Florida in accordance with the CS Work Plan (CSWP) (HGL, 2022a). The CSR summarizes investigation activities performed on the Railroad Tie Disposal Area (RTDA) of the Un-Numbered Operational Areas (UNOA), Potential Release Location (PRL) 229 located at KSC. HydroGeoLogic, Inc. (HGL) prepared this report under Contract Number 80KSC019D0012. The purpose of the CSR is to provide information to evaluate the level of potential contamination in surface water and sediment samples collected from the RTDA PRL 229 Pond and determine if contaminants pose unacceptable risks to ecological receptors. The CSR provides analytical data of 10 sets of surface water and sediment samples collected in 2021. Surface water samples were analyzed for volatile organic compounds (VOCs), semi-volatile organic compounds (SVOCs), polynuclear aromatic hydrocarbon (PAHs), metals, hardness, and salinity, while sediment samples were analyzed for metals, total organic carbon (TOC), SVOCs, PAHs, and total petroleum hydrocarbons (TPH). The CSR includes a Screening Level Ecological Risk Assessment (SLERA) conducted under KSC’s Resource Conservation and Recovery Act (RCRA) Corrective Action Program to determine if unacceptable risks to ecological receptors exist at PRL 229 Pond. Metals and PAHs were detected in surface water samples, including detections of antimony, arsenic, barium, calcium, copper, lead, magnesium, thallium, zinc, anthracene, benzo(a)anthracene, benzo(a)pyrene, benzo(b)fluoranthene, benzo(g,h,i)perylene, benzo(k)fluoranthene, chrysene, dibenzo(a,h)anthracene, fluoranthene, indeno(1,2,3-c,d)pyrene and pyrene. Based on measured salinity (1.03 to 1.21 parts per thousand), the pond was identified as freshwater. Sediment analytical results also contained detections of metals and PAHs, including antimony, arsenic, barium, beryllium, cadmium, chromium, copper, lead, mercury, nickel, selenium, thallium, zinc, anthracene benzo(a)anthracene, benzo(a)pyrene, benzo(b)fluoranthene, benzo(g,h,i)perylene, benzo(k)fluoranthene, chrysene, dibenzo(a,h)anthracene, fluoranthene, indeno(1,2,3-c,d)pyrene and pyrene. Potential risks to ecological receptors were evaluated in accordance with the SLERA Work Plan and the Decision Process Document for the Resource Conservation and Recovery Act (RCRA) Corrective Action Program at KSC (DPD) (Geosyntec, 2019), and using the 2021 sediment and surface water analytical results. Potential ecological receptors evaluated in the SLERA include the aquatic community, benthic invertebrates, aquatic birds, and aquatic mammals. The SLERA included Steps 2a through 2c of the Ecological Risk Assessment (ERA) process in accordance with the DPD. Using multiple lines of evidence, the SLERA concluded that many of the detected analytes are present at concentrations similar to those in background or reference locations at KSC, and/or at concentrations that would not pose a significant risk to ecological communities. There are no screening values available for the avian community, and PAHs are bioaccumulative compounds. For this reason, food web modeling was completed as a supplement to Step 2c to provide a quantitative evaluation of this exposure pathway. Food web modeling indicates that PAHs are unlikely to pose a risk to birds exposed to site sediment and surface water. Based on the results of the SLERA, the contaminants in sediment and surface water pose no to minimal risk to the ecological communities that could live or forage at the site. Based on the results of the SLERA, no further study is recommended for the RTDA Pond at PRL 229.

Confirmation Sampling↗

DOE OSTI2011

An in situ SEM experimental study of the thermal stability of a LAST thermoelectric material

Thermal stability is a key factor affecting the deployment of thermoelectric (TE) materials in the application of power generation. LAST (Lead-Antimony-Silver-Tellurium) is an emerging material with promising TE properties. The current study focused on the thermal stability of a LAST composition Ag0.86Pb19SbTe20 fabricated from a cast ingot. Using a customized heating stage, the morphology of LAST particles was studied via scanning electron microscopy (SEM) in situ, between room temperature and 575oC. The LAST material included in this study was stable below 550oC. The inclusion phase, which was antimony-rich, has a lower thermal stability than the PbTe-rich matrix. The SEM finding was also consistent with a thermogravimetrtic analysis.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

DOE OSTI2012

Targets and methods for target preparation for radionuclide production

The invention relates to nuclear technology, and to irradiation targets and their preparation. One embodiment of the present invention includes a method for preparation of a target containing intermetallic composition of antimony Ti--Sb, Al--Sb, Cu--Sb, or Ni--Sb in order to produce radionuclides (e.g., tin-117 m) with a beam of accelerated particles. The intermetallic compounds of antimony can be welded by means of diffusion welding to a copper backing cooled during irradiation on the beam of accelerated particles. Another target can be encapsulated into a shell made of metallic niobium, stainless steel, nickel or titanium cooled outside by water during irradiation. Titanium shell can be plated outside by nickel to avoid interaction with the cooling water.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

DOE OSTI2013

Composition and methods of preparation of target material for producing radionuclides

A composition suitable for use as a target containing antimony to be irradiated by accelerated charged particles (e.g., by protons to produce tin-117m) comprises an intermetallic compound of antimony and titanium which is synthesized at high-temperature, for example, in an arc furnace. The formed material is powdered and melted in an induction furnace, or heated at high gas pressure in gas static camera. The obtained product has a density, temperature stability, and heat conductivity sufficient to provide an appropriate target material.

36 MATERIALS SCIENCE↗

DOE OSTI2018

NbFeSb based half-heusler thermoelectric materials and methods of fabrication and use

A thermoelectric half-Heusler material comprising niobium (Nb), iron (Fe) and antimony (Sb) wherein the material comprises grains having a mean grain size less than one micron. A method of making a nanocomposite half-Heusler thermoelectric material includes melting constituent elements of the thermoelectric material to form an alloy of the thermoelectric material, comminuting (e.g., ball milling) the alloy of the thermoelectric material into nanometer scale mean size particles, and consolidating the nanometer size particles to form the half-Heusler thermoelectric material comprising at least niobium (Nb), iron (Fe) and antimony (Sb) and having grains with a mean grain size less than one micron.

Joshi, Giri↗

DOE OSTI2016

Antiomony and layered carbon network battery anode

A method is provided for fabricating an antimony anode. The method disperses antimony (Sb) particles in a layered carbon network using a process such as mechanical mixing, ball milling, stirring, or ultrasound sonication, forming a Sb/carbon composite. The Sb/carbon composite is mixed with a binder, forming a mixture, and the mixture is deposited on a current collector. Advantageously, the binder may be an aqueous (water soluble) binder. In one aspect, prior to dispersing the Sb particles in the layered carbon network, the Sb particles are coated with carbon. For example, the Sb particles may be dispersed in a solution including a polymer, where the solution may be an aqueous or organic. Alternatively, the Sb particles may be dispersed in a solution including a monomer. The monomer solution is polymerized to form polymer sheathed Sb core-shell structures, and then carbonized. Associated Sb anodes and Sb anode batteries are also provided.

25 ENERGY STORAGE↗

DOE OSTI2019

NbFeSb-based half-heusler thermoelectric materials and methods of making

36 MATERIALS SCIENCE↗

DOE OSTI2018

DEVELOPMENT OF A 300 KV DC HIGH VOLTAGE PHOTOGUN AND BEAM BASED STUDIES OF ALKALI NTIMONIDE PHOTOCATHODES

To advance magnetized gun research in the United States, a compact DC high voltage photogun with inverted-insulator geometry was designed, built, and operated reliably at 300 kV bias voltage using alkali-antimonide photocathodes. This photogun will provide a magnetized electron beam for the future Jefferson Lab Electron-Ion Collider (JLEIC) cooler. This research describes key electrostatic design features of the photogun and evaluates the performance of the in-house fabricated photocathodes and the quality of the electron beams. The thermal emittance of the electron beam was measured with various conditions: differ?ent gun bias voltages, different laser spot sizes, and photocathodes with different substrate materials. It has been hypothesized that the photocathode surface roughness affects the quality of the photocathodes and the electron beam produced, which is directly related to the thickness of the antimony layer of the photocathode. This effect was studied experimen?tally for both the beam emittance and photocathode quantum efficiency lifetime, and the measurements indicate that the beam emittance is largely independent of the antimony layer thickness, and the lifetime benefits from a thick layer. The ion bombardment always poses a problem for the photocathodes during high current beam operations. An effective way to repel the beam-induced ions was identified and implemented, and a sustainable 28 mA beam was achieved from the gun. This thesis presents a good performance of the photogun, a remarkable quantum efficiency lifetime of the photocathodes and a low emittance of the electron beam.

Wang, Yan↗

DOE OSTI2023

Reaction pathways and Sb(III) minerals formation during the reduction of Sb(V) by Rhodoferax ferrireducens strain YZ-1

Antimony (Sb), a non-essential metalloid, can be released into the environment through various industrial ac-tivities. Sb(III) is considered more toxic than Sb(V), but Sb(III) can be immobilized through the precipitation of insoluble Sb 2 S 3 or Sb 2 O 3 . In the subsurface, Sb redox chemistry is largely controlled by microorganisms; how-ever, the exact mechanisms of Sb(V) reduction to Sb(III) are still unclear. Here, in this study, a new strain of Sb(V)-reducing bacterium, designated as strain YZ-1, that can respire Sb(V) as a terminal electron acceptor was iso-lated from Sb-contaminated soils. 16S-rRNA gene sequencing of YZ-1 revealed high similarity to a known Fe(III)-reducer, Rhodoferax ferrireducens. XRD and XAFS analyses revealed that bioreduction of Sb(V) to Sb(III) proceed through a transition from amorphous valentinite to crystalline senarmontite (allotropes of Sb 2 O 3 ). Genomic DNA sequencing found that YZ-1 possesses arsenic (As) metabolism genes, including As(V) reductase arsC. The qPCR analysis showed that arsC was highly expressed during Sb(V)-reduction by YZ-1, and thus is proposed as the potential Sb(V) reductase in YZ-1. This study provides new insight into the pathways and products of microbial Sb(V) reduction and demonstrates the potential of a newly isolated bacterium for Sb bioremediation.

54 ENVIRONMENTAL SCIENCES↗

DOE OSTI2013

AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films for solar cell applications

Highlights: ► AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films were formed by heating Na{sub 2}SeSO{sub 3} dipped Sb{sub 2}S{sub 3}/Ag layers. ► S/Se ratio was varied by changing the dipping time in Na{sub 2}SeSO{sub 3} solution. ► Characterized the films using XRD, XPS, SEM, Optical and electrical measurements. ► Band gap engineering of 1−1.1 eV for x = 0.51 and 0.52 respectively. ► PV Glass/FTO/CdS/AgSb(S{sub x}Se{sub 1−x}){sub 2}/C were prepared showing V{sub oc} = 410 mV, J{sub sc} = 5.7 mA/cm{sup 2}. - Abstract: Silver antimony sulfoselenide (AgSb(S{sub x}Se{sub 1−x}){sub 2}) thin films were prepared by heating glass/Sb{sub 2}S{sub 3}/Ag layers after selenization using sodium selenosulphate solution. First, Sb{sub 2}S{sub 3} thin films were deposited on glass substrates from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}. Then Ag thin films were thermally evaporated onto glass/Sb{sub 2}S{sub 3}, followed by selenization by dipping in an acidic solution of Na{sub 2}SeSO{sub 3}. The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Photovoltaic structures (PV) were prepared using AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed V{sub oc} from 230 to 490 mV and J{sub sc} 0.28 to 5.70 mA/cm{sup 2}, under illumination of AM1.5 radiation using a solar simulator.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Solubility shift and SUMOylaltion of promyelocytic leukemia (PML) protein in response to arsenic(III) and fate of the SUMOylated PML

Promyelocytic leukemia (PML), which is a tumor suppressor protein that nevertheless plays an important role in the maintenance of leukemia initiating cells, is known to be biochemically modified by As{sup 3+}. We recently developed a simple method to evaluate the modification of PML by As{sup 3+} resulting in a change in solubility and the covalent binding of small ubiquitin-like modifier (SUMO). Here we semi-quantitatively investigated the SUMOylation of PML using HEK293 cells which were stably transfected with PML-VI (HEK-PML). Western blot analyses indicated that PML became insoluble in cold RadioImmunoPrecipitation Assay (RIPA) lysis buffer and was SUMOylated by both SUMO2/3 and SUMO1 by As{sup 3+}. Surprisingly SUMO1 monomers were completely utilized for the SUMOylation of PML. Antimony (Sb{sup 3+}) but not bismuth (Bi{sup 3+}), Cu{sup 2+}, or Cd{sup 2+} biochemically modified PML similarly. SUMOylated PML decreased after removal of As{sup 3+} from the culture medium. However, unSUMOylated PML was still recovered in the RIPA-insoluble fraction, suggesting that SUMOylation is not requisite for changing the RIPA-soluble PML into the RIPA-insoluble form. Immunofluorescence staining of As{sup 3+}-exposed cells indicated that SUMO2/3 was co-localized with PML in the nuclear bodies. However, some PML protein was present in peri-nuclear regions without SUMO2/3. Functional Really Interesting New Gene (RING)-deleted mutant PML neither formed PML nuclear bodies nor was biochemically modified by As{sup 3+}. Conjugation with intracellular glutathione may explain the accessibility of As{sup 3+} and Sb{sup 3+} to PML in the nuclear region evading chelation and entrapping by cytoplasmic proteins such as metallothioneins. - Highlights: • As{sup 3+} is a carcinogen and also a therapeutic agent for leukemia. • PML becomes insoluble in RIPA and SUMOylated by As{sup 3+}. • Sb{sup 3+} modifies PML similar to As{sup 3+}. • Functional RING motif is necessary for As{sup 3+}-induced PML modification.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2011

Magnetic and transport properties of transparent SrSn{sub 0.9}Sb{sub 0.05}Fe{sub 0.05}O{sub 3} semiconductor films

The effect of antimony doping on the structural, magnetic, and electrical properties of transparent SrSn{sub 0.9}Sb{sub 0.05}Fe{sub 0.05}O{sub 3} films synthesized by RF sputtering on oxidized Si and quartz substrates has been investigated. A reduction in electrical resistivity by two orders of magnitude compared to 5% Fe doped SrSnO{sub 3} film was observed. The electrical conductivity behavior has been analyzed using the Mott's Variable range hopping model. The nature of magnetic ordering were investigated by field cooled (FC) and zero field cooled (ZFC) magnetization measurements. The applicability of models based on oxygen vacancies to explain the magnetic ordering present in the sample has been discussed.

36 MATERIALS SCIENCE↗