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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Investigation of the Mechanical Degradation of Zinc-Based Cold Spray Coatings for Steel Pipelines

Internal corrosion in wet natural gas is a big challenge in the oil and gas industry due to corrosive constituents such as carbon dioxide (CO2), hydrogen sulfide (H2S), other forms of sulfur, and water in the gas stream. To mitigate internal corrosion, zinc-based cold spray coatings were designed for use in natural gas pipelines to increase the lifespan of the pipeline network. However, one of the requirements in designing internal coatings is the resistance of the coatings to mechanical forces applied on the pipeline's internal wall during pigging operations. These forces are primarily compressive and shear/friction forces. This study examines material properties that must be considered when evaluating mechanical considerations. To determine the viability of the developed coatings with respect to the shear/friction forces, the shear adhesion and wear resistance of the materials have been evaluated. Shear adhesion testing was performed with modified clevises to determine the shear stress required to cause adhesion failure at the coating/substrate interface. Scanning electron microscopy was utilized to characterize the interfaces after failure. Wear testing was performed on coatings and pipeline materials utilizing pin-on-drum testing. These tests display the stress limitations and wear that the coatings can tolerate from pigging.

mechanical degradation↗
DOE OSTI2023

Zinc‐Imidazolate Films as an All‐Dry Resist Technology

Here, motivated by the drawbacks of solution phase processing, an all‐dry resist formation process is presented that utilizes amorphous zinc‐imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed by novel low temperature (120 °C) gas phase etching using 1,1,1,5,5,5‐hexafluoroacetylacetone (hfacH) to achieve well‐resolved 22 nm lines with a pitch of 30 nm. The effects of electron beam irradiation on the chemical structure and hfacH etch resistance of aZnMIm films are investigated, and it is found that electron irradiation degrades the 2‐methylimidazolate ligands and transforms aZnMIm into a more dense material that is resistant to etching by hfacH and has a C:N:Zn ratio effectively identical to that of unmodified aZnMIm. These findings showcase the potential for aZnMIm films to function in a dry resist technology. Sensitivity, contrast, and critical dimensions of the patterns are determined to be 37 mC cm −2 , 0.87, and 29 nm, respectively, for aZnMIm deposited on silicon substrates and patterned at 30 keV. This work introduces a new direction for solvent‐free resist processing, offering the prospect of scalable, high‐resolution patterning techniques for advanced semiconductor fabrication processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Interspace and Vacancy Modulation: Promoting the Zinc Storage of an Alcohol-Based Organic–Inorganic Cathode in a Water–Organic Electrolyte

Expanding interspace and introducing vacancies are desired to promote the mobility of Zn ions and unlock the inactive sites of layered cathodes. However, this two-point modulation has not yet been achieved simultaneously in vanadium phosphate. Here, in this work, a strategy is proposed for fabricating an alcohol-based organic–inorganic hybrid material, VO 1–x PO 4 ·0.56C 6 H 14 O 4 , to realize the conjoint modulation of the d-interspace and oxygen vacancies. Peculiar triglycol molecules with an inclined orientation in the interlayer also boost the improvement in the conversion rate of V 5+ to V 4+ and the intensity of the P—O bond. Their synergism can ensure steerable adjustment for intercalation kinetics and electron transport, as well as realize high chemical reactivity and redox-center optimization, leading to at least 200% increase in capacity. Using a water–organic electrolyte, the designed Zn-ion batteries with an ultrahigh-rate profile deliver a long-term durability (fivefold greater than pristine material) and an excellent energy density of ≈142 Wh kg –1 (including masses of cathode and anode), thereby substantially outstripping most of the recently reported state-of-the-art zinc-ion batteries. This work proves the feasibility to realize the two-point modulation by using organic intercalants for exploiting high-performance new 2D materials.

25 ENERGY STORAGE↗
DOE OSTI2023

Cationic Copper Species Stabilized by Zinc during the Electrocatalytic Reduction of CO 2 Revealed by In Situ X‐Ray Spectroscopy

Abstract Advanced in situ X‐ray absorption spectroscopy characterization of electrochemically co‐electrodeposited bi‐element copper alloy electrodes shows that zinc yields the formation of a stable cationic Cu species during the electroreduction of CO 2 at high cathodic polarization. In contrast, the formation/stabilization of cationic Cu species in copper oxides, or doping Cu with another element, like Ni, is not possible. It is found that the pure and mixed Cu:Zn electrodes behave similarly in term of electrocatalytic selectivity to multi‐carbon products. At higher Zn concentrations the electrode behaves like the pure Zn catalyst, which indicates that the Cu cationic species do not have a significant influence on the selectivity to multi‐carbon products. It is found that in the non‐monotonically distribution of products is dominated in term of surface energy in which copper prefers the surface. Otherwise, this work highlights the importance of in situ characterization to uncover the mechanisms mediating the catalytic reactions in contrast to ex situ or post mortem analysis, which can be a source of misinterpretation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Abstract New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm 2 V −1 s −1 , due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm 2 V –1 s –1 and a subthreshold slope of 0.29 V dec –1 . Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐ k gate insulator (ALD Al 2 O 3 ), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates.

Allemang, Christopher R.↗