Solution-based spin-coated tin sulfide thin films for photovoltaic and supercapacitor applications
Highlights: • Tin sulfide (SnS{sub x}) thin films were prepared by solution-based spin coating. • The SnS{sub x} films annealed at 500 °C exhibited a pure SnS phase. • The films exhibited direct band gap of 1.4 eV which is near to solar maximum. • The films with the pure SnS phase exhibited a specific capacitance of 42 F g{sup ―1}. - Abstract: In this study, tin sulfide (SnS{sub x}) thin films were prepared using a solution-based spin-coating method. The annealing temperature was observed to play a dominant role in determining the phase, crystallinity, and morphology of the SnS{sub x} thin films. The results obtained from X-ray diffraction, as well as optical and electrical measurements, revealed that the films annealed at 500 °C exhibit a pure SnS phase, with a carrier concentration and direct band gap of ∼10{sup 12} and 1.4 eV, respectively. To explore the applications of SnS in supercapacitors, electrochemical measurements were performed in a 0.2 M NaOH solution. The results indicated that films with a pure SnS phase have a high specific capacitance of 42 F g{sup ―1} at a current density of 2 A g{sup ―1}. The synthesized SnS thin films demonstrate potential for applications in electrochemical capacitors and solar cells.