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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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300 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Experimental Investigation into the Radar Anomalies on the Surface of Venus

Radar mapping of thc surface of Venus shows areas of high reflectivity (low emissivity) in the Venusian highlands at altitudes between 2.5-4.75 kilometers. The origin of the radar anomalies found in the Venusian highlands remains unclear. Most explanations of the potential causes for these radar anomalies come from theoretical work. Previous studies suggest increased surface roughness or materials with higher dielectric constants as well as surface atmospheric interactions. Several possible candidates of high-dielectric materials are tellurium) ferroelectric materials, and lead or bismuth sulfides. While previous studies have been influential in determining possible sources for the Venus anomalies, only a very few hypotheses have been verified via experimentation. This work intends to experimentally constrain the source of the radar anomalies on Venus. This study proposes to investigate four possible materials that could potentially cause the high reflectivities on the surface of Venus and tests their behavior under simulated Venusian conditions.

Kohler, E.↗
NASA NTRS2014

Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

Su, Ching-Hua↗
DOE OSTI2020

Closing the Loops on Solar Photovoltaics Modules: An Agent-Based Modeling Approach for the Study of Circular Economy Strategies

Solar photovoltaics (PV) installed capacity have grown exponentially since the early 2000s (average annual growth rate of 50%). With 4,700 GW projected installed capacity by 2050, the volume of PV panels waste is also expected to become substantial. Though renewables are a sine qua non to the establishment of a truly circular economy (CE), the issue arising from their end-of-life management needs to be resolved. The management of PV end-of-life also represent a singular opportunity to create value, from recovered valuable, rare or critical materials (e.g. silver, tellurium, indium). Moreover, the PV case illustrates some of the current barriers to CE; for instance, the need for a common definition of waste (PV are defined as e-waste in the European Union but as general waste in the United States) and potential loss of innovations' advantages (PV average efficiency has continuously grown the past 10 years). In this study, an agent-based modeling (ABM) approach is proposed to simulate PV end-of-life management in the United States. The model explores how the decisions of the various actors involved in handling PV waste affect the quantities of PV that are reused, recycled, or land-filled. In the model, manufacturers, residential, and nonresidential PV owners, installers, and recyclers are represented by agents while governmental policies and regulations are treated as exogenous variables. PV-market data are used to define agents' characteristics (e.g., installed PV capacities or producing costs). Agents' decision rules draw on the literature related to industrial symbiosis (IS) and peoples' waste behaviors as they appear as the most widely used model to implement CE principles at a meso level. Specifically, the concepts of mutual trust between IS actors and knowledge about the IS philosophy are yielded to define the agents' decision process. The primary outputs of the ABM are the costs and volume of waste associated with each end-of-life pathway. Preliminaries results indicate recycling of residential PV is affected by the cost, perceived difficulty of recycling behaviors, and social norms. Moreover, the type of network connecting agents and the initial recycling rate strongly influence results. The model also highlights the crucial role of recycling behavior adoption: in case of early failure of PV, recycled volumes increase by about 40%. This represents an additional 5.7 billion USD from potential recovered silver. Finally, although results for the PV case are presented here, the developed ABM aims at being a general tool for the study of CE strategies and the CE transition. Furthermore, steps of this research include extending the model to encompass circular economy strategies (e.g., design for recycling or lifetime extension) and validating its general architecture from various case studies.

14 SOLAR ENERGY↗
DOE OSTI2020

CdSexTe1-x /CdTe Devices With Reduced Interface Recombination Through Novel Back Contacts and Doping Strategies

In order to study rear interface recombination in CdSexTe1-x/CdTe solar cells, several back contact structures were fabricated using combinations of tellurium, alumina, amorphous silicon, and indium tin oxide. Film side Time-Resolved Photoluminescence measurements were taken to measure carrier lifetimes and interface recombination at the back interface. We show increasingly improved interface passivation through the subsequent use of alumina, amorphous silicon, and ITO. Additionally, we provide evidence that an arsenic-doped absorber forms a better interface with numerous back contact structures. Reductions in the back interface recombination velocity are shown to correlate with improvements in device external radiative efficiency.

13 HYDRO ENERGY↗
DOE OSTI2023

Zintl compounds with high thermoelectric performance and methods of manufacture thereof

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AM y X y , and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium (Sr), and has a ZT of the above about 0.60 above 675K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg 3.2 Sb 1.3 Bi 0.5-x Te x that has an average ZT above 0.8 from 400K to 800K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Liquid semiconductor-halogen based electronics

According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.

Voss, Lars↗
DOE OSTI2024

CdZnTeSe: Recent advances for radiation detector applications

The quest for cost-effective, high performing room temperature semiconductor detector (RTSD) materials for high energy gamma rays has been continuing for more than three decades. The requirements for RTSD materials, however, are more stringent as compared to other applications unrelated to detection of X- and gamma-rays, mainly due to the requirement of thick detectors for sufficient absorption of high-energy electromagnetic radiation and excellent charge-transport properties. The II-VI compound CdZnTe (CZT) with the composition of 10 atomic % Zn (Cd0.9Zn0.1Te) has been the material of choice over the past several years, and it has dominated the commercial market for RTSD materials and detectors. Despite its commercial success as a room temperature radiation detection material, CZT suffers from a lack of compositional homogeneity on both a micro- and macro-scale and the presence of high concentrations of sub-grain boundary (dislocation walls) networks and secondary phases (Te-rich inclusions). This chapter focuses on the presence of performance-limiting defects in CZT that hinder the yield and elevate the cost of high-quality detectors. The presence of such performance-limiting defects has restricted widespread deployment of CZT for a variety of potential applications, particularly for uses of relatively large detectors where the demands on material perfection are significantly greater. In the recent past, replacing some of the tellurium with selenium in the CZT matrix was found to be very effective in drastically reducing the Te-rich secondary phases and dislocation networks, plus

Roy, Utpal N.↗
NASA NTRS2021

Physics and Chemistry of Te and HgTe-based Ternary Melts

Historically, the theoretical treatment of the liquid phases has always been more difficult and complicated than that for solid and gas phases. A liquid has no lattice structure as crystalline solids and the atoms/molecules in the liquid can migrate through it relatively rapidly. On the other hand, it is also interacting with many other atoms/molecules so that the simplifications of the kinetic theory of gases cannot be employed. For more complicated liquids, such as the liquids of high ionicity and those containing hydrogen bonds and electric dipoles, the understanding is far from complete. At the same time, accurate information on the physics and chemistry of semiconductor melts is needed for the quantitative descriptions of the process of crystal growth from melt. The pre-crystallization phenomena in the liquid phase are critical because the properties of the grown crystals depend on the state and structure of the melt as well as the thermal history of the melt during solidification process. However, the data on the liquid phase, such as thermophysical properties of semiconductor melts are scarce, especially for the HgTe-based II-VI ternary compound semiconductors because of their high vapor pressure and extreme toxicity. Analysis of the thermophysical properties of the melt can provide information about structural transitions of the melt during the solidification process. From a broader point of view, the structure of liquids is much more complicated than the crystalline solids, especially the relaxation behavior through different thermal histories. The theory of hetero-phase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics, field theory, physics of nuclear-matter, cosmology, biology and even sociology. This book summarizes the physics and chemistry from the experimental measurements and theoretical analyses of phase diagram, thermodynamic properties, density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary and ternary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the analyses of these results. The main objectives of this study are: (1) to provide the phase diagrams and thermodynamic properties of Hg-Cd-Te and Hg-Zn-Te systems through quantitatively fitting the experimental data by assuming an associated solution model for the liquid phase, (2) to experimentally measure the thermophysical properties of the Hg-Cd-Te and Hg-Zn-Te melts, including density, viscosity, electrical conductivity and thermal conductivity as functions of temperature and composition and (3) to enhance the fundamental knowledge of hetero-phase fluctuations and relaxation phenomena in the melts and extend our understanding of the solidification process in order to interpret the experimental results of crystal growth so as to improve the melt growth processes of the compound semiconductor. The physics and chemistry of Te and HgTe-based ternary melts were explored through the studies of the structural transformation during melting, the supercooling during solidification, the relaxation phenomena after rapid cooling of the melts and the metal-semiconductor transition in the melts through the analyses of electrical conductivity and Lorenz number. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the analysis of the homogenization process in the melt will also be presented.

Thermophysical properties↗
NASA NTRS2021

Semiconductor to Metal Transition in the Solids/Melts of Te and Pseudo-Binary of Hg1-xCdxTe for x = 0, 0.1 and 0.2

This paper reports the experimentally measured thermal and electrical conductivities from which the Lorenz numbers as functions of temperature were derived for the solids and melts of elemental Te and samples of Hg1-xCdxTe of x = 0, 0.1 and 0.2. The structural changes in the vicinity of the solid-liquid phase transition of elemental Te and various Hg1-xCdxTe solid solutions were assessed by closely examining these experimental properties and the derived Lorenz numbers. The values of Lorenz numbers for the solids of these samples were higher than the value of L0, i.e., the Lorenz number for the free electron gas derived by Sommerfeld, implying the characteristics of non-degenerate semiconductor. With the increasing value of x, or the larger bandgap, the materials become more non-degenerate with larger deviation from L0. As the solids started to melt, the measured values of Lorenz number for all samples started to decrease and eventually reached and maintained at values close to L0 at higher temperatures. The trend of the Lorenz number indicates that the transition from non-degenerate semiconductor of the solid samples to metal or degenerate semiconductor when the samples temperature reached above their liquidus temperatures.

thermal conductivity↗