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DOE OSTI2022

Exploration of methods to remove implanted 210 Pb and 210 Po contamination from silicon surfaces

Radioactive contaminants on the surfaces of detector components can be a problematic source of background events for physics experiments searching for rare processes. Exposure to radon is a specific concern because it can result in the relatively long-lived 210 Pb (and progeny) being implanted to significant subsurface depths such that removal is challenging. Here, in this article, we present results from a broad exploration of cleaning treatments to remove implanted 210 Pb and 210 Po contamination from silicon, which is a material frequently used in rare-events searches. We demonstrate for the first time that heat treatments (“baking”) can effectively mitigate such surface contamination, with a 1200 °C bake resulting in a 97$^{+2}_{-3}$% reduction. We also report results using wet-chemistry and plasma-based methods, which show that etching can be highly effective provided the etch depth is sufficiently aggressive. Our survey of cleaning methods suggests consideration of multiple approaches during the different phases of detector construction to enable greater flexibility for efficient removal of 210 Pb and 210 Po surface contamination.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2025

Spin-on deposition of amorphous zeolitic imidazolate framework films for lithography applications

Amorphous zeolitic imidazolate framework (aZIF) films have been recently introduced as resists for electron beam and extreme ultraviolet lithography. aZIFs are also being considered for separation applications, including thin film membranes. However, the reported methods for aZIF deposition are currently based on highly empirical trial-and-error approaches that hinder control of film composition, thickness and uniformity as well as scale-up and transferability to different coating geometries. This work presents a method for depositing aZIF films with controllable thickness using dilute precursors mixed immediately before encountering the substrate. Importantly, the method is amenable to quantitative analysis by computational fluid dynamics to extract intrinsic deposition rates and limiting reactant transport diffusivities, enabling predictive physics-based modeling of the deposition process. This allows the deposition method to be adapted for spin coating on silicon wafers to prepare high-quality aZIF films with consistently controlled thickness. Using this approach, high-resolution resist performance and wafer-scale use for beyond extreme-ultraviolet lithography of aZIF films is demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Dynamics of plasma atomic layer etching: Molecular dynamics simulations and optical emission spectroscopy

Atomic layer etching is intrinsically dynamic as it involves sequential and repeated exposures of a surface to be etched with different species at different energies. The composition and structure of the near surface region change in both time and depth. Full understanding of this process requires resolving both temporal and spatial variations. In this work, we consider silicon (Si) atomic layer etching (ALE) by alternating exposure to chlorine gas (Cl 2 ) and argon ions (Ar + ). Molecular dynamics (MD) simulations are compared to experimental measurements with the aim of better understanding the dynamics of ALE and to test the simulation procedure. The simulations help to more fully interpret the experimental measurements. Further, optical emission measured just above the surface being etched can be related to etch products and can, therefore, be directly compared to simulation predictions. The simulations capture the measured initial product distribution leaving the surface and match the measured etch per cycle reasonably well. While simulations demonstrate the importance of ion-induced surface damage and mixing into a layer below the surface, the depth of which depends mainly on ion energy, the experiments suggest there is more Cl mixed into the layer than the MD procedure predicts.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2024

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗

DOE OSTI2026

EMPHATIC Silicon Strip Detector Efficiencies

EMPHATIC is an experiment at Fermilab which aims to reduce current neutrino flux uncertainties. This report discusses the limitations current neutrino flux uncertainties places on large scale neutrino experiments, provides background on the EMPHATIC experiment, and details the project of determining the efficiency of the Silicon Strip Detectors (SSDs) used in EMPHATIC. As part of the data analysis process and in order to increase the accuracy of EMPHATIC’s simulations a representation of efficiency of each SSD is required. To achieve this a data-driven analysis was performed on EMPHATIC's collected data using the Root and Art frameworks. Visual and numerical representations of efficiency were determined. The average efficiency over all SSDs is 98.58\%, however this number deflated as it includes known bad channels.

Olson, Virginia [Illinois U., Urbana (main)]↗

DOE OSTI2026

Determining the Efficiency of EMPHATICs Silicon Strip Detectors (SSDs)

Olson, V. [Illinois U., Urbana (main)]↗

DOE OSTI2023

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Optically addressable solid-state defects are emerging as some of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors (Q) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with a Q of 4100, we observe a 3-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of C = 2. In conclusion, these results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

Purcell enhancement↗

DOE OSTI2025

High and Ultra-High Temperature Reaction Kinetics by Single Nanoparticle Mass Spectrometry

Methodology is presented for non-destructive, optically-detected single nanoparticle (NP) mass spectrometry, with the goal of extracting surface reaction kinetics for single NPs at high temperatures. Methods for determining the NP charge, mass, and temperature as a function of time are discussed, and the data are used to extract both the absolute kinetics for mass change, as well as the efficiencies of the surface processes that cause them. Factors that contribute to the uncertainties in absolute and relative mass determination, and in the resulting kinetic parameters, are discussed. The method allows the NP-to-NP variations in initial reactivity to be measured directly, along with the time evolution of reactivity resulting from NP structural/compositional changes that occur under reaction conditions. The strengths and limitations of single nanoparticle mass spectrometry as a high temperature surface kinetics tool are discussed in the context of sublimation and O2 oxidation kinetics experiments for single hafnium (Hf) NPs at temperatures ranging above 2400 K. The Hf oxidation kinetics are compared to analogous oxidation experiments for silicon, graphite, and carbon black NPs. In all four cases, the oxidation chemistry was dominated by processes that result in net mass loss, and the distinct mechanisms responsible are discussed. All four NPs also eventually passivated, i.e., the efficiencies for oxidative etching decreased by at least two orders of magnitude, relative to the initial efficiencies. Furthermore, the passivation mechanisms, which are quite different for carbon, compared to silicon or hafnium, are discussed. Carbon NP passivation is attributed to structural isomerization leading to fully coordinated, fullerene-like NP surfaces, while for silicon and hafnium, passivation results from delayed formation of an oxide layer, triggered by accumulation of oxygen in the NP sub-surface region.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Novel Foaming Solutions for High Level Waste (HLW) Processing - 20195

Foaming occurs during treatment of high level waste (HLW) at Savannah River Site's Defense Waste Processing Facility (DWPF) in the Chemical Process Cell (CPC) due to high gas generation from process steam and chemical offgas products [1]. The presence of amphiphilic particles in the waste slurry stabilizes the foam [2], [3]. Efficient processing of HLW requires foam control, as foam-overs lead to lower productivity and potential radioactive contamination of condensate streams. DWPF currently employs Siovation Antifoam 747, a surfactant produced by Momentive Performance Materials, as an antifoaming agent during waste treatment. Despite its ability to control foam generation, processing issues have arisen from its use [4]. During DWPF chemical processing, a chemical antifoam agent must be effective at temperatures up to 103 deg. C between pH 3-13. Antifoam 747 is effective at pH 7 but degrades as pH deviates [5]. Antifoam 747 is 90% by weight Momentive{sup TM} L77 and 10% by weight Momentive{sup TM} Y-17580. These ingredients are trisiloxane products, which are especially vulnerable to attack in acidic and caustic environments. Since Antifoam 747 readily degrades, periodic addition is required. Several processing concerns related to Antifoam 747 have affected DWPF operation. Its overuse warranted concern of potential flammable melter offgas under upset conditions due to the generation of carbon dioxide and hydrogen. As a result, a Potential Inadequacy in the Safety Analysis (PISA) was declared [6]. Antifoam contribution has been included in the melter offgas flammability strategy and the quantity of antifoam is monitored to ensure limits are not exceeded. Testing at Savannah River National Laboratory (SRNL) determined that propanal, tri-methylsilanol, and hexamethyldisiloxane are generated as Antifoam 747 degrades, leading to a second PISA [7]. The formation of these byproducts poses additional flammability risks. Furthermore, the methyl and ethyl groups of these compounds may be responsible for the formation of the methyl and ethyl mercury discovered in DWPF [8], [9]. The formation of organomercury has specifically been called out by DOE as a need for increased research. The effectiveness of non-chemical methods for foam control and the efficiency of alternative antifoam agents were evaluated as part of an effort to improve HLW treatment operations at DWPF and to reduce, or eliminate, the flammability hazards associated with Antifoam 747 currently in use. Foaming of high-level waste (HLW) slurries is an issue at the Defense Waste Processing Facility (DWPF) Chemical Process Cell (CPC) which is currently mitigated with a chemical antifoam agent. The effectiveness of non-chemical methods for foam control and the efficiency of alternative antifoams were examined to improve HLW treatment at DWPF and to eliminate the flammability hazards associated with Siovation Antifoam 747 currently in use. Non-chemical foam control methods were deemed unviable for chemical processing at DWPF, as the spray/mist technique requires too much water and space limitations make installation and implementation of headspace agitators unfeasible. The use of ultrasonic energy thickened and further stabilized the foam. Two suitable alternative defoaming agents, Momentive{sup TM} Y- 17112 and Evonik Surfynol{sup R} MD-20, were identified. Both defoamers control foam over a pH range of 4- 13 at boiling, with no flammable degradation products, and only minimal quantities (100-200 mg/kg) are required under glycolic acid conditions. In order to validate the effectiveness of these defoaming agents, SRNL recommends irradiation testing and laboratory scale SRAT/SME experiments with actual radioactive waste. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2022

LeTID-Affected Cells from a Utility-Scale Photovoltaic System Characterized by Deep Level Transient Spectroscopy

Photovoltaic modules from a utility-scale field experienced power loss by light- and elevated temperature-induced degradation (LeTID). Samples of one of the affected monocrystalline silicon cells were cored and extracted from the module packaging and encapsulation. One of the cell fragments was processed using a regeneration cycle of applying short-circuit-rated current in forward bias at 85 degrees C for 2 weeks, while the other fragment was kept in its outdoor-degraded LeTID state. Both samples were scribed to form 2-mm diameter isolated areas using a femtosecond-pulse-width laser micromachining system. Both isolated areas contained front grid line segments which were wire bonded to larger contact pads, and the samples were probed in a cryostat linked to a deep-level transient spectroscopy (DLTS) system. Using DLTS, a majority-carrier, hole-trap defect was detected on each sample with an activation energy of 0.42 eV. The LeTID-degraded sample, however, had a larger signal corresponding to a trap density of 1.1x10^13 cm-3, which was about five times larger than the 2.1x10^12 cm-3 trap density of the regenerated sample.

charge carrier lifetime↗

DOE OSTI2019

Origins of hydrogen that passivates bulk defects in silicon heterojunction solar cells

Silicon heterojunction solar cell fabrication incorporates a significant amount of hydrogen into the silicon wafer bulk, and the amount of injected hydrogen is comparable to that introduced by silicon nitride films during a high-temperature firing step. In this work, the origins of the hydrogen injected during heterojunction cell processing have been identified. We demonstrate that the hydrogen plasma treatment that is routinely included to improve surface passivation considerably increases the hydrogen concentration in the wafers. We also show that the hydrogenated amorphous silicon i/p+ stack is more effective than the i/n+ stack for bulk hydrogen incorporation, and both are more effective than intrinsic films alone.

Sun, Chang (ORCID:0000000282140458)↗

DOE OSTI2024

Sub-pilot-scale Production of High-Value Products from U.S. Coals

Investigators from the University of Utah, University of Wyoming and Marshall University pursued a program to study the conversion of raw coal to high-value products of carbon fiber and silicon carbide. Team members also developed an initial framework for a data portal that can incorporate laboratory data on coal processing and product quality, and also work with tools for machine learning for data analysis, data visualization and economic assessment. Experimental R&D efforts focused on the conversion of raw coal to coal tar and other byproducts, and the resulting tar intermediates were upgraded to form anisotropic and isotropic pitch materials. These pitch materials were produced from coal using both thermal (pyrolysis) and chemical (mild solvolysis liquefaction) decomposition of raw coal. Four different coals were studied: Utah bituminous coal (Sufco), Wyoming PRB coal (Black Thunder), Illinois bituminous coal (Illinois #6), and West Virginia bituminous coal (Flying Eagle). Both metallurgical-grade coking coals and lower-grade steam coals were investigated, and controlled secondary gas-phase reactions were used during a two-stage pyrolysis process to induce cracking and condensation reactions among the pyrolytic tar species. This approach successfully improved the performance of the lower grade coals for yielding pitch materials, with properties more consistent with a commercial-grade pitch that had previously demonstrated success for quality carbon fiber production. The use of waste plastic materials was also studied, to help improve physical and chemical characteristics of the intermediate tars and final pitch product; in particular, for lowering the pitch softening point to an acceptable level for melt spinning carbon fiber. Mild solvolysis liquefaction was also used as a method for producing pitch for carbon fiber production. As expected, significantly higher pitch yields were obtained using this approach, and waste plastic materials were also successfully used to reduce pitch softening point to an acceptable level. The plastic materials were also utilized to create a solvent for the mild solvolysis process, and this plastic-derived solvent was shown to provide results consistent with more expensive commercial chemical solvents, and could thus avoid the need for costly recovery and recycle of a liquefaction solvent. Additional experimental R&D focused on the production of silicon carbide (β-SiC) from the residual char byproduct from pitch production, and also on the production of carbon fiber from the anisotropic pitch. SiC was successfully synthesized using a mixture of residual char and sandstone at a ratio of 1:1. Reaction temperature and residence time were optimized and yielded a product purity of 81%. For carbon fiber production, the most successful pitch samples were obtained from the mild solvolysis liquefaction approach, combined with the use of a plastic (HDPE)-derived solvent. Fiber properties improved over time as laboratory fiber production methodologies improved, and final yields of carbon fiber were obtained with a diameter of 12.14 ± 1.10 um, Modulus of 173.73 ± 15.25 GPa, and Tensile Strength of 1.04 ± 0.10 GPa. A proof-of-concept Modern Community Research Data Portal (MCRDP) was developed and deployed for coal and coal-derived pitch characterization, with the full support of (i) remote web-based access, (ii) distributed analysis, (iii) interactive visualization and exploration, (iv) shared and long-term data access, (v) advanced query capabilities and (vi) real-time collaboration. The Coal to Products Data Portal “coaltoproducts.org” provides researchers with space to store and share data within a project, tools for analyzing and understanding data for scientific investigation, and the ability to publish data to the broader community for reproducibility. The portal leverages the Material Commons 2.0 (MC) platform developed by the Center for PRedictive Integrated Structural Materials Science (PRISMS) of the University of Michigan, to achieve long-term longevity of data collections and, more importantly, collaborative science. A number of data visualization tools were also assessed and implemented for interrogating the experimental and modeling data. The machine learning portion of this project analyzed datasets from two different coal conversion processes performed on a diverse set of coal samples from both the coal pyrolysis experiments and the solvent liquefaction experiments. The work was initiated by exploring standard regression models on the pyrolysis data, aiming to understand the impact of sample characteristics and processing conditions on key product metrics. Over the course of the project, the focus expanded to include a variety of machine learning tools, delving into both supervised and unsupervised learning methods. Models tested on the pyrolysis data included linear, ridge, lasso, elastic-net, Gaussian process, random forest regression, and AutoSklearn, and the approach was continually refined to enhance predictive accuracy and model interpretability. Similar techniques were applied to the liquefaction data with an additional focus on feature engineering. Along with mesophase content, additional outputs of interest were the pitch yield, softening point, and QI content. Insights derived from these analyses are crucial in determining the factors influencing the quality and yield of coal-derived products. As the work progressed, the research evolved from foundational model comparisons to analyses of random forests, decision paths, and feature importance scores. A thorough market analysis was performed to examine the prospects of coal-based carbon fibers. The best opportunities for coal come from its lower and more stable price relative to petroleum, particularly for subbituminous coals, which is the primary advantage that a coal refinery may have over a petroleum refinery. Before a commercial CTP production facility can be modeled, however, several things need to be understood regarding the nature of the would-be coal refinery. These include the technology to be deployed, the size of facility, the volume(s) of co-product(s), and the waste and emissions profile of the plant. The volume of co-products and waste may be substantial and will require separate market analysis to ensure viability. In the near-term, the importance of coal tar pitch, in the form of carbon pitch, to the aluminum and steel industries is likely to overshadow the alternative use of this material as an input for carbon fiber. The importance of steel and aluminum in building materials, and the need for carbon materials in their manufacturing, will ensure that demand for these products remains for the long run. In addition, carbon fiber may also be the best substitute for steel and aluminum well into the future. While society will eventually be able to shift production of much of its electricity needs to renewables, it will not be able to shift away from fossil fuels for production of high-strength construction and vehicular materials. Demand for carbon fiber is expected to increase quickly, but the volume of carbon fiber and the amount of coal that would be needed to produce even a sizeable share of this market may still be relatively small compared to current coal production. Thus, other coal-based products like graphene, graphite, carbon foams, resins, and carbon-based building products will play important roles in sustaining coal production as coal-fired power generation continues to decline.

01 COAL, LIGNITE, AND PEAT↗

DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗

DOE OSTI2024

The Tiny Median Filter: A Small Size, Flexible Arbitrary Percentile Finder Scheme Suitable for FPGA Implementation

This document reports the design, implementation and testing of a small silicon resource usage, very flexible arbitrary percentile finding scheme called the Tiny Median Filter. It can be used not only as a median filter in image processing with square filtering windows, but also for applications of any percentile filter or maximum or minimum finder with any size of data set as long as the number of bits of the data is finite. It opens possibilities for image processing tasks with non-square or irregular filter windows. In this scheme, data swapping or data bit manipulating are avoided and high functional efficiency of the logic components is applied to save silicon resources. Some logic functions are absorbed into other functions to further reduce the complexity. The combinational logic paths are designed to be sufficiently short so that the firmware can be compiled to the maximum operating frequency allowed by the block memories of the FPGA devices. The Tiny Median Filter receives, processes and output data in non-stop manner with no irregular timing which helps to simplify design of surrounding stages.

Wu, Jinyuan [Fermilab] (ORCID:0000000344329521)↗

DOE OSTI2020

Limiting Retained Austenite Decomposition in Quenched and Tempered Steels: Influences of Rapid Tempering and Silicon

Tempering reactions are critical to microstructure and property control in martensitic steels. Here, retained austenite decomposition and cementite precipitation are monitored using Mössbauer spectroscopy in 4340 and 300-M steel under conventional and rapid tempering conditions. Tempering times are compared at a constant tempered hardness by increasing tempering temperatures associated with short time conditions to achieve equivalent matrix softening to that of longer tempering times. Time-temperature combinations that provide equivalent tempered hardness generated microstructures with similar dislocation densities and cementite precipitation fractions; these mechanisms are controlled by self-diffusion. However, systematic differences in retained austenite content were observed at a given degree of softening, where shorter tempering times exhibited higher levels of retained austenite compared to more conventional conditions. At low temperatures, the differences in retained austenite preservation between explored time-temperature conditions are attributed to corresponding differences in carbon diffusion distance (in austenite), the controlling diffusional process of retained austenite decomposition. At higher temperatures, retained austenite decomposition exhibits C-curve kinetic behavior in 4340. Thus, reduced thermodynamic driving force for cementite and ferrite formation at higher temperature is believed to play a role in restricting retained austenite decomposition within some short-time, high temperature tempering regimes. The addition of silicon pushes cementite precipitation and retained austenite decomposition to higher temperatures, although retained austenite decomposition is suppressed to a greater extent than cementite precipitation. Potential is illustrated for coupling rapid tempering with silicon alloying to produce appreciably tempered martensite (~490 HV) with relatively less retained austenite decomposition compared to conventional tempering conditions.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Pushing the Limits: Maximizing Energy Density in Silicon Sulfide Solid‐State Batteries

Here, for the first time, we demonstrate a silicon solid-state battery (SSB) architecture that achieves >400 Wh kg −1 , approaching the theoretical limit for silicon-based SSBs. This configuration features a 99.9 wt% micro-Si, a thin sulfide solid electrolyte (SSE), and a high-loading NMC811. Key to these results is strategically selecting and evaluating the processing techniques, whether wet or dry, for the negative electrode, positive electrode and thin sheet-type SSE. Excessive lithium incorporation into the silicon host, beyond the Li 3.75 +Si phase to form a LiSi composite, is essential to match the high capacity of the positive electrode. This SSB achieves over 1000 cycles for a 2 mAh cm −2 with ≈80% capacity retention and 94% capacity retention for 3 mAh cm −2 over 500 cycles at 25 °C. Post analysis identifies the primary capacity decay mechanisms as oxidation at the NMC/SSE interface and structural disruptions within NMC. Meanwhile, the Si electrode maintains a robust solid-electrolyte interphase layer, minimizing capacity decay. This study highlights the necessity for improved NMC coatings, lattice oxygen stabilization, and a durable positive electrode-electrolyte interface to improve the long-term stability of SSBs. Strategies leading to a single-layer pouch cell SSB exceeding 400 Wh kg −1 are developed.

25 ENERGY STORAGE↗

DOE OSTI2021

3D Printing of High Viscosity Reinforced Silicone Elastomers

Recent advances in additive manufacturing, specifically direct ink writing (DIW) and ink-jetting, have enabled the production of elastomeric silicone parts with deterministic control over the structure, shape, and mechanical properties. These new technologies offer rapid prototyping advantages and find applications in various fields, including biomedical devices, prosthetics, metamaterials, and soft robotics. Stereolithography (SLA) is a complementary approach with the ability to print with finer features and potentially higher throughput. However, all high-performance silicone elastomers are composites of polysiloxane networks reinforced with particulate filler, and consequently, silicone resins tend to have high viscosities (gel- or paste-like), which complicates or completely inhibits the layer-by-layer recoating process central to most SLA technologies. Herein, the design and build of a digital light projection SLA printer suitable for handling high-viscosity resins is demonstrated. Further, a series of UV-curable silicone resins with thiol-ene crosslinking and reinforced by a combination of fumed silica and MQ resins are also described. The resulting silicone elastomers are shown to have tunable mechanical properties, with 100–350% elongation and ultimate tensile strength from 1 to 2.5 MPa. Three-dimensional printed features of 0.4 mm were achieved, and complexity is demonstrated by octet-truss lattices that display negative stiffness.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Silicon Nanosheets as Candidates for Silicon-Based Optoelectronics

The growth in computational ability over the past decades has positively impacted global development, the economy, healthcare, and science. As on-chip components are approaching the atomic scale, alternative paradigms are needed to address the thermal and electronic issues that impose bottlenecks for computing. One approach to address this is with optoelectronics. However, silicon—the backbone of microelectronics—is a poor choice due to its indirect bandgap, while existing optoelectronic materials are incompatible with CMOS infrastructure. Monolayer silicon nanosheets (SiNSs) are an intriguing material that exhibit photoluminescence, and are compositionally-compatible with the CMOS process. Here, we synthesize and characterize monolayer SiNSs, and show spectroscopic evidence that they exhibit a quasi-direct bandgap, which is corroborated by DFT calculations. We probe their thermal stability, demonstrating their structure and photoluminescence are stable beyond the required operating temperatures for computing applications. These optoelectronic properties, CMOS-compatibility, and stability make SiNSs a viable candidate for silicon-based photonics.

Ryan, Bradley↗