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All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Gratings and Random Reflectors for Near-Infrared PIN Diodes

Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the optical path through the detector to increase the probability of absorption of photons and thereby increase the resulting excitation of charge carriers. A pair of crossed gratings or a random reflector according to the proposal would be fabricated as an integral part of photodetector structure on the face opposite the focal plane (see figure). In the presence of crossed gratings, light would make four passes through the device before departing. In the presence of a random reflector, a significant portion of the light would make more than four passes: After each bounce, light would be scattered at a different random angle, and would have a chance to escape only when it was reflected, relative to the normal, at an angle less than the critical angle for total internal reflection. Given the indices of refraction of the photodiode materials, this angle would be about 17 . This amounts to a very narrow cone for escape of trapped light.

Gunapala, Sarath↗
NASA NTRS1996

Generation of Antibunched Light by Excited Molecules in a Microcavity Trap

The active microcavity is adopted as an efficient source of non-classical light. By this device, excited by a mode-locked laser at a rate of 100 MHz, single-photons are generated over a single field mode with a nonclassical sub-poissonian distribution. The process of adiabatic recycling within a multi-step Franck-Condon molecular optical-pumping mechanism, characterized in our case by a quantum efficiency very close to one, implies a pump self-regularization process leading to a striking n-squeezing effect. By a replication of the basic single-atom excitation process a beam of quantum photon (Fock states) can be created. The new process represents a significant advance in the modern fields of basic quantum-mechanical investigation, quantum communication and quantum cryptography.

DeMartini, F.↗
NASA NTRS1975

Rotational excitation in H2-H2 collisions - Close-coupling calculations

Rotational excitation in molecule-molecule collisions has been treated for the first time by accurate quantum close-coupling scattering calculations, employing an expansion basis set of two to three rotational levels for each molecule and correctly accounting for exchange of identical particles. Elastic and inelastic cross sections have been computed for collisions of para-para, ortho-ortho, and para-ortho hydrogen molecules assuming an intermolecular potential suggested previously. The accuracy of recent 'effective potential' calculations is demonstrated by comparison with the exact quantum results.

Green, S.↗
NASA NTRS1976

Rotational excitation of symmetric top molecules by collisions with atoms: Close coupling, coupled states, and effective potential calculations for NH3-He

The formalism for describing rotational excitation in collisions between symmetric top rigid rotors and spherical atoms is presented both within the accurate quantum close coupling framework and also the coupled states approximation of McGuire and Kouri and the effective potential approximation of Rabitz. Calculations are reported for thermal energy NH3-He collisions, treating NH3 as a rigid rotor and employing a uniform electron gas (Gordon-Kim) approximation for the intermolecular potential. Coupled states are found to be in nearly quantitative agreement with close coupling results while the effective potential method is found to be at least qualitatively correct. Modifications necessary to treat the inversion motion in NH3 are discussed.

Green, S.↗
NASA NTRS2000

The Low Energy Effective Area of the Chandra Low Energy Transmission Grating Spectrograph

The Chandra X-ray Observatory was successfully launched on July 23, 1999, and subsequently began an intensive calibration phase. We present the preliminary results from the in-flight calibration of the low energy response of the High Resolution Camera spectroscopic readout (HRC-S) combined with the Low Energy Transmission Grating (LETG) aboard Chandra. These instruments comprise the Low Energy Transmission Grating Spectrograph (LETGS). For this calibration study, we employ a pure hydrogen non-LTE white dwarf emission model (T = 25000 K and log g = 9.0) for comparison with the Chandra observations of Sirius B. The pre-flight calibration of the LETGS effective area only covered wavelengths shortward of 44 A (E less than 277 eV). Our Sirius B analysis shows that the HRC-S quantum efficiency (QE) model assumed for longer wavelengths leads to an overestimate of the effective area by an average factor of about 1.6. We derive a correction to the low energy HRC-S QE model to match the predicted and observed Sirius B spectra over the wavelength range of 44-185 A. We make an independent test of our results by the comparison of a Chandra LETGS observation of HZ 43 with pure hydrogen model atmosphere predictions and find good agreement.

Pease, D.↗
NASA NTRS1996

A Comprehensive Analysis of the Physical Properties of Advanced GaAs/AlGaAs Junctions

Extensive studies have been performed on MQW junctions and structures because of their potential applications as avalanche photodetectors in optical communications and imaging systems. The role of the avalanche photodiode is to provide for the conversion of an optical signal into charge. Knowledge of junction physics, and the various carrier generation/recombination mechanisms, is crucial for effectively optimizing the conversion process and increasing the structure's quantum efficiency. In addition, the recent interest in the use of APDs in imaging systems has necessitated the development of semiconductor junctions with low dark currents and high gains for low light applications. Because of the high frame rate and high pixel density requirements in new imaging applications, it is necessary to provide some front-end gain in the imager to allow operation under reasonable light conditions. Understanding the electron/hole impact ionization process, as well as diffusion and surface leakage effects, is needed to help maintain low dark currents and high gains for such applications. In addition, the APD must be capable of operating with low power, and low noise. Knowledge of the effects of various doping configurations and electric field profiles, as well as the excess noise resulting from the avalanche process, are needed to help maintain low operating bias and minimize the noise output.

Menkara, Hicham M.↗
NASA NTRS1982

Photon bunching and the photon-noise-limited performance of infrared detectors

The photon-noise-limited performance of a radiation detector exposed to a thermal background of temperature T is analyzed by calculating the resulting specific detectivity. Both ideal photon detectors of arbitrary quantum efficiency eta and ideal thermal detectors of arbitrary emissivity eta are considered; and the effects of both shot noise and excess noise are taken into account. The relative contributions of these two sources depend on the quantum efficiency or emissivity of the system. For frequencies nu such that hnu/kT is much less than eta, excess noise can make an appreciable contribution to the total system noise. For the case of the detection of the narrow-band radiation, the specific detectivity is independent of eta in the limit hnu/kT is much less than eta.

Boyd, R. W.↗
NASA NTRS1979

Stark-profile calculations for Lyman-series lines of one-electron ions in dense plasmas

The frequency distributions of the first six Lyman lines of hydrogenlike carbon, oxygen, neon, magnesium, aluminum, and silicon ions broadened by the local fields of both ions and electrons are calculated for dense plasmas. The electron collisions are treated by an impact theory allowing (approximately) for level splittings caused by the ion fields, finite duration of the collisions, and screening of the electron fields. These calculations are fully quantum mechanical and include the full Coulomb interaction. Ion effects are calculated in the quasistatic, linear-Stark-effect approximation, using distribution functions of Hooper and Tighe which include correlation and shielding effects. Theoretical uncertainties from the various approximations are estimated, and the scaling of the profiles with density, temperature, and nuclear charge is discussed. A correction for the effects caused by low-frequency field fluctuations is suggested.

Griem, H. R.↗
NASA NTRS1986

Thinning and mounting a Texas Instruments 3-phase CCD

Thin CCDs with precise control of thickness and surface quality allow astronomers to optimize chips for specific applications. A means of mechanically thinning a TI 800 x 800 CCD with an abrasive slurry of aluminum oxide is presented. Using the same techniques, the abrasives can be replaced with a chemical solution to eliminate subsurface damage. A technique of mounting the CCD which retains the high quality surface generated during thinning is also demonstrated. This requires the backside of the chip to be bonded to a glass window which closely matches silicon's thermal expansion properties. Thinned CCDs require backside treatment to enhance blue and UV quantum efficiency. Two methods are discussed which may be effective with this mounting system.

Lesser, M. P.↗
NASA NTRS1993

Finite nucleus effects on relativistic energy corrections

The effect of using a finite nucleus model in quantum-chemical calculations is examined. Relativistic corrections from the first order Foldy-Wouthuysen terms are affected indirectly by the change in wavefunction, but also directly as a result of revised expressions for the Darwin and spin-orbit terms due to the change in nuclear potential. A calculation for the Rn atom indicates that the mass-velocity and Darwin corrections are much more sensitive to the finite nucleus than the non-relativistic total energy, but that the total contribution for these two terms is quite stable provided the revised form of the Darwin term is used. The spin-orbit interaction is not greatly affected by the choice of nuclear model.

Dyall, Kenneth G.↗
NASA NTRS1993

Disturbance, the uncertainty principle and quantum optics

It is shown how a disturbance-type uncertainty principle can be derived from an uncertainty principle for joint measurements. To achieve this, we first clarify the meaning of 'inaccuracy' and 'disturbance' in quantum mechanical measurements. The case of photon number and phase is treated as an example, and it is applied to a quantum non-demolition measurement using the optical Kerr effect.

Martens, Hans↗
NASA NTRS2007

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗
NASA NTRS2003

Large format long-wavelength infrared narrow-band, multi-band, and broad-band QWIP focal plane arrays

A 640x512 pixel, long-wavelength cutoff, narrow-band quantum well infrared photodetector focal pllay array, a four-band QWIP FPA in 4-16 um spectral region, and a broad-band QWIP FPA having 15.4 mum cutoff have been demonstrated. In this paper we discuss the detector designs, dark currents, quantum efficiencies, responsivities, detectivities, noise equivalent differential temperatures, the effect of FPA nonuniformity on performance, and the operabilities of these QWIP FPAs.

Mumolo, J. M.↗
NASA NTRS1983

Quantum-chemical modeling of boron and noble gas dopants in silicon

The electron effects of the presence of boron and noble gas dopants in a model silicon lattice were investigated using a self-consistent charge extended Hueckel program. The extent of electronic interaction of the noble gas with the lattice is given by: Kr greater than Ar greater than Ne. Theoretically, boron diffusion in the presence of neon, argon or krypton was examined using a self-consistent charge extended Hueckel program. The net energy of interaction between boron and neon is strongly repulsive while argon-boron exhibits a region of relative stability; krypton exhibits behavior similar to argon though no region of stability was found for the range of separations used in the calculations. Finally, it is noted, from the relative energy of the topmost filled molecular orbital associated with boron (in an interstitial position), that activation of the boron does not require boron movement but can be accomplished by indirect transitions.

Aronowitz, S.↗
NASA NTRS1992

The effects of molecular structure on the electrical conductivity of polymers

The role of Quantum Theoretical Methods is both predictive and supportive of experimental results in Chemistry. Present day methods are able to calculate vibrational spectra and stereochemical interactions for molecules of moderate size (up to 20 atoms). As for the predictive side, the electronic structure of molecules and polymers can be calculated in order to narrow down the field of many potential candidates, which would have the novel properties looked for. The following has been accomplished at the Rutgers Camden Chemistry Department as results of calculations on molecular and polymeric systems of interest to the Polymers Branch of the NASA Lewis Research Center, under Grant NAG3-956.

Burke, Luke A.↗
NASA NTRS2004

Electron-Spin Filters Based on the Rashba Effect

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Ting, David Z.-Y.↗
NASA NTRS2008

Dot-in-Well Quantum-Dot Infrared Photodetectors

Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.

Gunapala, Sarath↗
NASA NTRS2003

Thermally-Driven Josephson Effect

Break-throughs in the study of superfluid He-3 weak links and recent demonstration of Josephson effect in He-4 are a result of significant advances in ultra-sensitive transducer and nanofabrication technology. However, further progress in the performance of superfluid weak links and quantum rotation interferometry devices depends, in part, on reducing the mechanical noise and increasing the effective duty cycle of such devices. In existing devices, the DC Josephson effect is driven by chemical potential difference produced by a pressure applied across the weak link. We propose a novel drive technique, where the chemical potential is due to a controlled temperature difference. This technique promises to eliminate mechanical shock associated with the switch of the direction of applied pressure and to achieve 100% duty cycle. The thermally driven Josephson effect may also answer outstanding questions about dissipation in superfluid weak links.

Penanen, Konstantin↗