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301 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Directional Solidification and Mechanical Properties of NiAl-NiAlTa Alloys

Directional solidification of eutectic alloys is a promising technique for producing in-situ composite materials exhibiting a balance of properties. Consequently, the microstructure, creep strength and fracture toughness of directionally solidified NiAl-NiAlTa alloys were investigated. Directional solidification was performed by containerless processing techniques to minimize alloy contamination. The eutectic composition was found to be NiAl-15.5 at% Ta and well-aligned microstructures were produced at this composition. A near-eutectic alloy of NiAl-14.5Ta was also investigated. Directional solidification of the near-eutectic composition resulted in microstructures consisting of NiAl dendrites surrounded by aligned eutectic regions. The off-eutectic alloy exhibited promising compressive creep strengths compared to other NiAl-based intermetallics, while preliminary testing indicated that the eutectic alloy was competitive with Ni-base single crystal superalloys. The room temperature toughness of these two-phase alloys was similar to that of polycrystalline NiAl even with the presence of the brittle Laves phase NiAlTa.

Johnson, D. R.↗
NASA NTRS1986

The effect of diffusive hydrogen segregation on fracture of polycrystalline nickel

Hydrogen embrittlement of polycrystalline nickel was studied under conditions which allowed the diffusion and segregation of hydrogen to grain boundaries to be controlled. It was shown that even at high solute concentrations of hydrogen, the fracture mode was ductile shear rupture, if transport of hydrogen to the grain boundaries was not allowed. As the amount of hydrogen segregation to the grain boundaries was increased, the fracture mode became increasingly intergranular. Analysis of the temperature dependence of this transition from ductile rupture to transgranular fracture yields a hydrogen segregation enthalpy of 11.6 kJ/mol. The transition in the fracture mode was also observed at a constant aging temperature by increasing the solute hydrogen concentration. The kinetics of this fracture transition suggest that the hydrogen segregation layer extends about 35 nm from the grain boundary. It is suggested that the fracture mechanism is a softening of the material in this segregation region due to the high hydrogen concentration.

Lassila, D. H.↗
NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗
NASA NTRS1995

Bend stress relaxation and tensile primary creep of a polycrystalline alpha-SiC fiber

Understanding the thermomechanical behavior (creep and stress relaxation) of ceramic fibers is of both practical and basic interest. On the practical level, ceramic fibers are the reinforcement for ceramic matrix composites which are being developed for use in high temperature applications. It is important to understand and model the total creep of fibers at low strain levels where creep is predominantly in the primary stage. In addition, there are many applications where the component will only be subjected to thermal strains. Therefore, the stress relaxation of composite consituents in such circumstances will be an important factor in composite design and performance. The objective of this paper is to compare and analyze bend stress relaxation and tensile creep data for alpha-SiC fibers produced by the Carborundum Co. (Niagara Falls, NY). This fiber is of current technical interest and is similar in composition to bulk alpha-SiC which has been studied under compressive creep conditions. The temperature, time, and stress dependences will be discussed for the stress relaxation and creep results. In addition, some creep and relaxation recovery experiments were performed in order to understand the complete viscoelastic behavior, i.e. both recoverable and nonrecoverable creep components of these materials. The data will be presented in order to model the deformation behavior and compare relaxation and/or creep behavior for relatively low deformation strain conditions of practical concern. Where applicable, the tensile creep results will be compared to bend stress relaxation data.

Hee Man, Yun↗
NASA NTRS2007

Measurement of Damage Profiles from Solar Wind Implantation

NASA's Genesis Mission launched from Cape Canaveral in August of 2001 with the goal of collecting solar wind in ultra-pure materials. The samples were returned to Earth more than three years later for subsequent analysis. Although the solar wind is comprised primarily of protons, it also contains ionized species representing the entire periodic table. The Genesis mission took advantage of the natural momentum of these ionized species to implant themselves in specialized collectors including single crystal Si and SiC. The collectors trapped the solar wind species of interest and sustained significant damage to the surface crystal structure as a result of the ion bombardment. In this work, spectroscopic ellipsometry has been used to evaluate the extent of this damage in Si and SiC samples. These results and models are compared for artificially implanted samples and pristine non-flight material. In addition, the flown samples had accumulated a thin film of molecular contamination as a result of outgassing in flight, and we demonstrate that this layer can be differentiated from the material damage. In addition to collecting bulk solar wind samples (continuous exposure), the Genesis mission actually returned silicon exposed to four different solar wind regimes: bulk, high speed, low speed, and coronal mass ejections. Each of these solar wind regimes varies in energy, but may vary in composition as well. While determining the composition is a primary goal of the mission, we are also interested in the variation in depth and extent of the damage layer as a function of solar wind regime. Here, we examine flight Si from the bulk solar wind regime and compare the results to both pristine and artificially implanted Si. Finally, there were four samples which were mounted in an electrostatic "concentrator" designed to reject a large fraction (>85%) of incoming protons while enhancing the concentration of ions mass 4-28 amu by a factor of at least 20. Two of these samples were single crystal 6H silicon carbide. (The others were polycrystalline CVD diamond and amorphous carbon that were not examined in the work.) The ion damaged SiC samples from the concentrator were studied in comparison to the flight Si from the bulk array to understand differences in the extent of the damage.

McNamara, K. M.↗
NASA NTRS2000

Fretting Stresses in Single Crystal Superalloy Turbine Blade Attachments

Single crystal nickel base superalloy turbine blades are being utilized in rocket engine turbopumps and turbine engines because of their superior creep, stress rupture, melt resistance and thermomechanical fatigue capabilities over polycrystalline alloys. Currently the most widely used single crystal nickel base turbine blade superalloys are PWA 1480/1493 and PWA 1484. These alloys play an important role in commercial, military and space propulsion systems. High Cycle Fatigue (HCF) induced failures in aircraft gas turbine and rocket engine turbopump blades is a pervasive problem. Blade attachment regions are prone to fretting fatigue failures. Single crystal nickel base superalloy turbine blades are especially prone to fretting damage because the subsurface shear stresses induced by fretting action at the attachment regions can result in crystallographic initiation and crack growth along octahedral planes. Furthermore, crystallographic crack growth on octahedral planes under fretting induced mixed mode loading can be an order of magnitude faster than under pure mode I loading. This paper presents contact stress evaluation in the attachment region for single crystal turbine blades used in the NASA alternate Advanced High Pressure Fuel Turbo Pump (HPFTP/AT) for the Space Shuttle Main Engine (SSME). Single crystal materials have highly orthotropic properties making the position of the crystal lattice relative to the part geometry a significant factor in the overall analysis. Blades and the attachment region are modeled using a large-scale 3D finite element (FE) model capable of accounting for contact friction, material orthotrophy, and variation in primary and secondary crystal orientation. Contact stress analysis in the blade attachment regions is presented as a function of coefficient of friction and primary and secondary crystal orientation, Stress results are used to discuss fretting fatigue failure analysis of SSME blades. Attachment stresses are seen to reach peak values at locations where fretting cracks have been observed. Fretting stresses at the attachment region are seen to vary significantly as a function of crystal orientation. Attempts to adapt techniques used for estimating fatigue life in the airfoil region, for life calculations in the attachment region, are presented. An effective model for predicting crystallographic crack initiation under mixed mode loading is required for life prediction under fretting action.

Arakere, Nagaraj K.↗
NASA NTRS1989

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

Mahan, John E.↗
NASA NTRS1983

High temperature deformation of hot-pressed polycrystalline orthoenstatite

Artificial hot pressed polycrystalline samples were prepared from purified powder of Bamble, Norway, orthoenstatite, (Mg0.86Fe0.14)SiO3. The uniaxial creep behavior of the polycrystalline orthoenstatite was studied over stress ranges of 10-180 MPa and temperatures of 1500-1700 K (0.82-0.93 T sub m) under two different oxygen fugacities, namely equilibrium (Mo-MoO2 buffer) and a reducing (graphite heating element) atmosphere, respectively. An intergranular glassy phase of different compositions with a cavitational creep deformation were observed. In the Mo-MoO2 buffer atmosphere with PO2 approx. 10 to the minus 11 power - 10 to the minus 13 power atmospheres, the results of an analytical electron microscopy analysis indicate that the glassy phases are richer in Ca and Al due to the residual impurities after hot pressing. In the reducing atmosphere with an oxygen fugacity of PO2 approx. 10 to the minus 3 power - 10 to the minus 25 power atmospheres, the results of analytical electron microscopy analysis indicate that the glassy phase is almost pure silica with the presence of free iron precipitate on grain facets and at triple junctions due to the reduction of bulk materials.

Dehghan-Banadaki, A.↗
NASA NTRS1992

Microgravity accelerometer characterization on Columbia STS-32 mission

The Honeywell In-Space Accelerometer (HISA) is a three-axis microgravity accelerometer instrument package recently developed by Honeywell Systems and Research Center (SRC) to monitor oscillatory and transient accelerations onboard spacecraft and spaceborne structures. The HISA was designed to be co-located with materials and life sciences experiments to record real-time accelerometer event data, sampling time, and temperature. The HISA was originally developed to monitor the microgravity disturbances associated with a polymer morphology experiment developed by 3M Company in Minneapolis, Minnesota. The HISA was first flight tested with the 3M experiment on the Space Shuttle Atlantis STS-34 in October 1989. The HISA was successfully flown on a second shuttle mission (Columbia STS-32 in January 1990) in support of the NASA JSC-sponsored Microgravity Disturbances Experiment (MDE), which focused on the effects of microgravity disturbances on the growth of high-quality Indium crystals. The primary objective of the STS-32 MDE experiment was to investigate the effects of crew-induced gravity disturbances on the microstructure (crystal defects and uniformity of impurity distribution) of float-zone-grown crystals. The float-zone technique involves establishing a suspended molten zone between two cylindrical samples a pure, single-crystal sample and an impure, polycrystalline sample. Microgravity disturbances due to crew treadmill activity and orbiter maneuvering system thruster firings were sensed and recorded by the HISA to understand their effects on the stability of the float zone. The principle of operation of the HISA, the flight configuration of the HISA supporting the MDE experiment, and the characterization of STS-32 treadmill disturbance data are summarized.

Schoess, Jeff↗
NASA NTRS2003

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Jin, Michael↗
NASA NTRS2004

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Jin, Michael H.-C.↗
NASA NTRS1993

Low cycle fatigue behavior of polycrystalline NiAl at 300 and 1000 K

The low cycle fatigue behavior of polycrystalline NiAl was determined at 300 and 1000 K - temperatures below and above the brittle- to-ductile transition temperature (BDTT). Fully reversed, plastic strain-controlled fatigue tests were conducted on two differently fabricated alloy samples: hot isostatically pressed (HIP'ed) prealloyed powder and hot extruded castings. HIP'ed powder (HP) samples were tested only at 1000 K, whereas the more ductile cast-and-extruded (C+E) NiAl samples were tested at both 1000 and 300 K. Plastic strain ranges of 0.06 to 0.2 percent were used. The C+E NiAl cyclically hardened until fracture, reaching stress levels approximately 60 percent greater than the ultimate tensile strength of the alloy. Compared on a strain basis, NiAl had a much longer fatigue life than other B2 ordered compounds in which fracture initiated at processing-related defects. These defects controlled fatigue life at 300 K, with fracture occurring rapidly once a critical stress level was reached. At 1000 K, above the BDTT, both the C+E and HP samples cyclically softened during most of the fatigue tests in air and were insensitive to processing defects. The processing method did not have a major effect on fatigue life; the lives of the HP samples were about a factor of three shorter than the C+E NiAl, but this was attributed to the lower stress response of the C+E material. The C+E NiAl underwent dynamic grain growth, whereas the HP material maintained a constant grain size during testing. In both materials, fatigue life was controlled by intergranular cavitation and creep processes, which led to fatigue crack growth that was primarily intergranular in nature. Final fracture by overload was transgranular in nature. Also, HP samples tested in vacuum had a life three times longer than their counterparts tested in air and, in contrast to those tested in air, hardened continuously over half of the sample life, thereby indicating an environmentally assisted fatigue damage mechanism. The C+E samples were tested only in air. At 1000 K, NiAl exhibited a superior fatigue life when compared to most superalloys on a plastic strain basis, but was inferior to most superalloys on a stress basis.

Lerch, Bradley A.↗
NASA NTRS1996

Development and Processing of Nickel Aluminide-Carbide Alloys

With the upper temperature limit of the Ni-based superalloys attained, a new class of materials is required. Intermetallics appear as likely candidates because of their attractive physical properties. With a relatively low density, high thermal conductivity, excellent oxidation resistance, high melting point, and simple crystal structure, nickel aluminide (NiAl) appears to be a potential candidate. However, NiAl is limited in structural applications due to its low room temperature fracture toughness and poor elevated temperature strength. One approach to improving these properties has been through the application of eutectic composites. Researchers have shown that containerless directional solidification of NiAl-based eutectic alloys can provide improvement in both the creep strength and fracture toughness. Although these systems have shown improvements in the mechanical properties, the presence of refractory metals increases the density significantly in some alloys. Lower density systems, such as the carbides, nitrides, and borides, may provide NiAl-based eutectic structure. With little or no information available on these systems, experimental investigation is required. The objective of this research was to locate and develop NiAl-carbide eutectic alloys. Exploratory arc-melts were performed in NiAl-refractory metal-C systems. Refractory metal systems investigated included Co, Cr, Fe, Hf, Mo, Nb, Ta, Ti, W, and Zr. Systems containing carbides with excellent stability (i.e.,HfC, NbC, TaC, TiC, and ZrC) produced large blocky cubic carbides in an NiAl matrix. The carbides appeared to have formed in the liquid state and were randomly distributed throughout the polycrystalline NiAl. The Co, Cr, Fe, Mo, and W systems contained NiAl dendrites with a two-phase interdendritic microconstituent present. Of these systems, the NiAl-Mo-C system had the most promising microstructure for in-situ composites. Three processing techniques were used to evaluate the NiAl-Mo-C system: arc-melting, slow cooling, and containerless directional solidification. Arc-melting provided a wide range of compositions in an economical and simple fashion. The slow cooled ingots provided larger ingots and slower cooling rates than arc-melting. Directional solidification was used to produce in-situ composites consisting of NiAl reinforced with molybdenum carbides.

Newport, Timothy Scott↗