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At least 307 records · Page 17

Thermal IR imaging system using a self-scanned HgCdTe/CCD detector array

It is likely that future high resolution earth observation imaging systems will utilize self-scanned IR detectors. In an initial step toward this goal, an IR imaging system operating in the 10 to 12 micron spectral region has been developed. This system uses a 9-element HgCdTe/CCD linear array operating in the photoconductive mode, nine pre-amplifiers and a silicon CCD multiplexer integrated into a focal plane assembly. Opto-mechanical techniques are used to scan the scene and images are produced in real time. The imaging performance of this system is described and measurements of noise, responsivity, specific detectivity, and detector sensitivity profiles are presented. The requirements for more advanced detector arrays for use in future NASA remote sensing missions are also discussed.

Husain-Abidi, A. S.↗

An active alignment scheme for the MPTS array

In order to maximize the efficiency of the microwave power transmission system (MPTS), the surface of the array antenna must be extremely flat, which is difficult to achieve using passive techniques over the 1 km dimensions of the array. In order to achieve and maintain this required flatness, a rotating laser beam used for leveling applications on Earth was utilized as a reference system. A photoconductive sensor with a reflective collecting surface was used to determine the displacement and polarity of any misalignment and automatically engage a stepping motor to drive a variable-length mechanism to make the necessary corrections. Once aligned, little power is dissipated since a nulling bridge circuit that centers on the beam is used, an important alignment feature since even laser beams broaden considerably at 1 km distances.

Iwasaki, R.↗

Monolithically integrated active optical devices

Considerations relevant to the monolithic integration of optical detectors, lasers, and modulators with high speed amplifiers are discussed. Some design considerations for representative subsystems in the GaAs-AlGaAs and GaInAs-InP materials systems are described. Results of a detailed numerical design of an electro-optical birefringent filter for monolithic integration with a laser diode is described, and early experimental results on monolithic integration of broadband MESFET amplifiers with photoconductive detectors are reported.

Ballantyne, J.↗

Voyager spacecraft images of Jupiter and Saturn

The Voyager imaging system is described, noting that it is made up of a narrow-angle and a wide-angle TV camera, each in turn consisting of optics, a filter wheel and shutter assembly, a vidicon tube, and an electronics subsystem. The narrow-angle camera has a focal length of 1500 mm; its field of view is 0.42 deg and its focal ratio is f/8.5. For the wide-angle camera, the focal length is 200 mm, the field of view 3.2 deg, and the focal ratio of f/3.5. Images are exposed by each camera through one of eight filters in the filter wheel on the photoconductive surface of a magnetically focused and deflected vidicon having a diameter of 25 mm. The vidicon storage surface (target) is a selenium-sulfur film having an active area of 11.14 x 11.14 mm; it holds a frame consisting of 800 lines with 800 picture elements per line. Pictures of Jupiter, Saturn, and their moons are presented, with short descriptions given of the area being viewed.

Birnbaum, M. M.↗

Large-area silicon sheet task

A set of computer models was used to define a growth system configuration that was then built and used to grow web with lower thermally generated stress. Aspects of research in the edge-defined film-fed growth (EFG) method of making Si ribbon are reported. A technique was developed to determine base resistivity and carrier lifetime in semicrystalline wafers. Automated growth of 150 kg of 15 cm-dia ingot material per crucible is reviewed. Scanning transmisson electron microscopy (STEM) and microprobe investigations of processed EFG ribbon are reported. The chemical composition of the large precipitates was studied. The structural arrangement and the electrical activity of distentions or close to the central twin plane in processed material were studied. The electrical and structural properties of grain boundaries in silicon are discussed. Temperature-dependence measurements of zero-bias conductance, a photoconductivity technique, and deep-level transient spectroscopy (DLTS) were developed. A grooving and staining technique, secondary ion mass spectroscopy, and EBIC measurements in scanning electron microscopy were used to study enhanced diffusion of phosphorus at grain boundaries in polycrystaline silicon. The fundamental mechanisms of abrasion and wear and the deformation of Si by a diamond in various fluid environments are described. The efficiency of solar cells made from EFG ribbon and Semix Inc. material is reported.

Morrison, A. D.↗

Dynamical electrophotoconductivity in polycrystalline thin films

Polycrystalline cadmium sulfide (CdS) films were deposited on lithium niobate (LiNbO3) substrates by vacuum evaporation and annealed to obtain high photosensitivity. The change in photoconductivity of these films due to the penetration of electric fields associated with elastic waves propagating on their substrates was demonstrated and studied. The relationship between the acoustic electric field and the induced change in film conductivity was found to be a nonlinear one. The fractional change in conductivity is strongly dependent on the light intensity and the film temperature, showing a prominent maximum as a function of these quantities. The largest recorded fractional change in conductivity was about 25% at electric fields of the order of 1,000 volts per centimeter. A phenomological model was developed based on the interaction between the space charge created by the electric field and the electron trapping states in the photoconductor.

Kowel, S. T.↗

A monolithic lead sulfide-silicon MOS integrated-circuit structure

A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.

Jhabvala, M. D.↗

Thermal infrared pushbroom imagery acquisition and processing

A 9-element focal plane detector array and signal processing electronics was developed and delivered in December 1977. It was integrated into a thermal infrared imaging system using LSI microprocessor image processing and CRT display. After three years of laboratory operation, the focal plane has demonstrated high reliability and performance. On the basis of the 9-channel breadboard, the 90-element Aircraft Pushbroom IR/CCD Focal Plane Development Program was funded in October 1977. A follow-on program was awarded in July 1979, for the construction of a field test instrument and image processing facility. The objective of this project was to demonstrate thermal infrared pushbroom hard-copy imagery. It is pointed out that the successful development of the 9-element and 90-element thermal infrared hybrid imaging systems using photoconductive (Hg,Cd)Te has verified the operational concept of 8 to 14 micrometer pushbroom scanners.

Brown, T. J.↗

Three holes bound to a double acceptor - Be(+) in germanium

A double acceptor binding three holes has been observed for the first time with photoconductive far-infrared spectroscopy in beryllium-doped germanium single crystals. This new center, Be(+), has a hole binding energy of about 5 meV and is only present when free holes are generated by ionization of either neutral shallow acceptors or neutral Be double acceptors. The Be(+) center thermally ionizes above 4 K. It disappears at a uniaxial stress higher than about a billion dyn/sq cm parallel to (111) as a result of the lifting of the valence-band degeneracy.

Haller, E. E.↗

Characterization of grain boundaries in silicon

Zero-bias conductance and capacitance measurements at various temperatures were used to study trapped charges and potential barrier height at the boundaries. Deep-level transient spectroscopy (DLTS) was applied to measure the density of states at the boundary. A study of photoconductivity of grain boundaries in p-type silicon demonstrated the applicability of the technique in the measurement of minority carrier recombination velocity at the grain boundary. Enhanced diffusion of phosphorus at grain boundaries in three cast polycrystalline photovoltaic materials was studied. Enhancements for the three were the same, indicating that the properties of boundaries are similar, although grown by different techniques. Grain boundaries capable of enhancing the diffusion were found always to have strong recombination activities; the phenomena could be related to dangling bonds at the boundaries. Evidence that incoherent second-order twins of (111)/(115) type are diffusion-active is presented.

Cheng, L. J.↗

Astronomical application of IR CID technology

A portable microcomputer data system was developed to test a 2 x 64-element Si:Bi charge injection device (CID) infrared detector array on the Lick Observatory Shane telescope. An existing 0.5 m spectrograph was used for the tests after modification, and a spectral resolution of 1000 was achieved. Slow device response, due to the low background conditions in the spectrograph were shown. Astronomical data were later obtained, and a device read noise on the order of a few hundred electrons was achieved. The signal to noise ratios of the resulting spectra were about a factor of five lower than what could have been achieved with discrete photoconductive detectors. It is concluded that the CID array is competitive for applications in backgrounds lower than those used in the tests.

Rank, D. M.↗

Optical detectors for spectroscopy

The modes of operation of photoconductive and photoemissive array detectors are described, and their performance characteristics compared and contrasted, with emphasis on their suitability for use as detectors for optical spectroscopy. The prospects for future developments of the array detectors are discussed.

Timothy, J. G.↗

Lead sulfide - Silicon MOSFET infrared focal plane development

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Barrett, J. R.↗

The development and test of ultra-large-format multi-anode microchannel array detector systems

The specific tasks that were accomplished with each of the key elements of the multi-anode microchannel array detector system are described. The modes of operation of position-sensitive electronic readout systems for use with high-gain microchannel plates are described and their performance characteristics compared and contrasted. Multi-anode microchannel array detector systems with formats as large as 256 x 1024 pixels are currently under evaluation. Preliminary performance data for sealed ultraviolet and visible-light detector tubes show that the detector systems have unique characteristics which make them complementary to photoconductive array detectors, such as CCDs, and superior to alternative pulse-counting detector systems employing high-gain MCPs.

Timothy, J. G.↗

Tunable Heterodyne Receiver from 100 Micron to 1,000 Micron for Airborne Observations

Interest in high resolution spectrometers for the submillimeter wavelength range from 100 micron to 1,000 micron is mostly stimulated by molecular spectroscopy in radioastronomy and atmospheric physics, and by plasma diagnostic experiments. Schottky diodes in waveguide mixer technology and InSb-hot electron bolometers are successfully used in the 0.5 to a few millimeter range whereas tandem Fabry-Perot spectrometers combined with photoconductive detectors (Ge:Sb and Ge:Ga) are used for the 100 micron range. Recent research on heterodyne spectrometers, with Schottky diodes in an open structure mixer and a molecular laser as local oscillators, which can be used over the whole wavelength range is summarized.

Roeser, H. P.↗

Monolithic lead salt-silicon focal plane development

This paper is a summary of work done in the development of monolithic lead salt-silicon infrared focal plane technology. The photoconductive detector materials, PbS and PbSe are chemically deposited onto premetallized silicon MOSFET integrated circuit wafers. A variety of structures based on an implanted PMOS process were fabricated and evaluated. Operational results of an eight-element PbS array multiplexed on-chip are presented along with radiometric measurements on other integrated PbS-silicon MOSFET structures. PbS imagery is shown using one element of a 20-element array integrated on-chip.

Barrett, J. R.↗

Infrared measurements of spacecraft glow planned for Spacelab 2

A liquid helium cooled infrared telescope (IRT) was to be flown in July 1985 on Spacelab 2. The instrument is designed to measure both diffuse and discrete infrared astronomical sources, including the zodiacal light, galactic, and extragalactic components, as well as to evaluate the induced Orbiter environment. The focal plane contains ten photoconductive detectors covering six broad bands from 2 to 120 microns. Each detector has a 0.5 by 1.0 deg field of view optimized for detection of extended sources of IR radiation. Except for the 2 micron detector, the system noise is limited by the sky background noise. The measurements planned for the IRT use the 1 meter base of the Plasma Diagnostic Package (PDP), an already existing SL 2 experiment, as the glow generating surface. The measurements are repeated changing the position of the PDP, the attitude of the Orbiter, and the ram direction in an effort to remove both the thermal component of the PDP emission and the cosmic background radiation.

Fazio, G. G.↗