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At least 307 records · Page 17

Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

Malik, R. J.↗

High-efficiency indium tin oxide/indium phosphide solar cells

Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

Li, X.↗

Classes of ring galaxies generated by dynamical friction

Dynamical friction is incorporated in the numerical modeling of colliding ring galaxies. It is shown that dynamical friction may lead to the capture of an initially unbound companion into a damped oscillatory orbit before ultimately merging with the target disk. In the late stages of its motion the companion may be virtually merged with the main galaxy while rings are still propagating in the disk. This raises the possibility that there exist (at least) two classes of ring galaxies: a class of ring galaxies with separate detached companions in which dynamical friction is too weak to have captured the collider, and a second class with no apparent companion in which the latter has either merged with the target galaxy or has disrupted. These two classes could possibly be identified with O-type and P-type ring galaxies of Few and Madore (1986).

Luban-Lotan, Pnina↗

Tailorable infrared sensing device with strain layer superlattice structure

An infrared photodetector is formed of a heavily doped p-type Ge(x)Si(1-x)/Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

Cheng, Li-Jen↗

Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

Gessert, T. A.↗

Indium phosphide solar cells - Recent developments and estimated performance in space

The current status of indium phosphide solar cell research is reviewed. In the NASA research program, efficiencies of 18.8 percent were achieved for standard n/p homojunction InP cells while 17 percent was achieved for ITO/InP cells processed by sputtering n-type indium tin oxide onto p-type indium phosphide. The latter represents a cheaper, simpler processing alternative. Computer modeling calculations indicate that efficiencies of over 21 percent are feasible. Relatively large area cells are produced in Japan with a maximum efficiency of 16.6 percent.

Weinberg, Irving↗

Multiple doping of silicon-germanium alloys for thermoelectric applications

It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

Fleurial, Jean-Pierre↗

Interface properties of various passivations of HgCdTe

The effects of different surface treatments of the p-type Hg(x-1)Cd(x)Te (x about 0.2) alloy, including anodic-sulfide, anodic-oxide, and ZnS coatings, on the surface charge density and surface mobility were investigated. Measurements of surface recombination velocities in samples passivated by either a ZnS coating on a freshly etched surface or by anodic native sulfide combined with deposited ZnS showed essentially the same temperature dependence down to 50 K. For the same original material, both the surface state density and the activation energy were found to be similar. It is suggested that, for both passivations, the surface is controlled by traps that can be related to lattice defects, such as vacancies.

Schacham, S. E.↗

Steps toward interstellar silicate dust mineralogy

One of the most certain facts on interstellar dust is that it contains grains with silicon oxygen tetrahedra (SOT), the internal vibrations of which cause the well known silicate bands at 10 and 18 microns. The broad and almost structureless appearance of them demonstrates lack of translation symmetry in these solids that must be considered amorphous or glassy silicates. There is no direct information on the cations in these interstellar silicates and on the number of bridging oxygens per tetrahedron (NBO). Comparing experimental results gained on amorphous silicates, e.g., silicate glasses, of cosmically most abundant metals (Mg, Fe, Ca, Al) with the observations is the only way to investigate interstellar silicate dust mineralogy (cf, Dorschner and Henning, 1986). At Jena University Observatory IR spectra of submicrometer-sized grains of pyroxene glasses (SSG) were studied. Pyroxenes are common minerals in asteroids, meteorites, interplanetary, and supposedly also cometary dust particles. Pyroxenes consist of linearly connected SOT (NBO=2). In the vitreous state reached by quenching melted minerals, the SOT remain nearly undistorted (Si-O bond length unchanged); the Si-O-Si angles at the bridging oxygens of pyroxenes, however, scatter statistically. Therefore, the original cation oxygen symmetry of the crystal (octahedral and hexahedral coordination by O) is completely lost. The blended bands at 10 and 18 microns lose their diagnostic differences and become broad and structureless. This illustrates best the basic problem of interstellar silicate mineral diagnostics. Optical data of glasses of enstatite, bronzite, hypersthene, diopside, salite, and hedenbergite have been derived. Results of enstatite (E), bronzite (B), and hypersthene (H) show very good agreement with the observed silicate features in the IR spectra of evolutionarily young objects that show P-type silicate signature according to the classification by Gurtler and Henning (1986). Compositional parameters and main characteristics of experimental SSG spectra in IR for the glasses E, B, and H are shown in tabular form. Results fit excellently the relations derived by Koike and Hasegawa (1987) and suggest that the band ratio of the astronomical silicate by Draine and Lee (1984) is too low.

Dorschner, J.↗

Properties of insulator interfaces with p-HgCdTe

Heat treatment at 70 C of low carrier concentration p-type HgCdTe samples (p sub o = 8 x 10 exp 14/cm) generates an inverted surface layer. A two day anneal process below 95 C did not affect the Hall coefficient, whereas an almost complete recovery was obtained by annealing at 120 C. While bulk electron mobility, obtained from PEM data, remained high (about 9 x 10 exp 4 sq cm/V s at 77 K), surface mobility is lower by more than an order of magnitude. Surface recombination velocity indicates a continuous improvement with increased temperature, and the activation energy remains equal to the vacancies energy level. The proposed mechanism is that of positive changes in the sulfide migrating towards the interface and generating an image inversion layer.

Schacham, Samuel E.↗

Surface electrons in inverted layers of p-HgCdTe

Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45 to 4.15 K. Data are extracted utilizing a numerical second derivative of dc measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to what was expected.

Schacham, Samuel E.↗

Ellipsometric study of cubic SiC

Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.

Alterovitz, Samuel A.↗

Photovoltaic effects in photoemission studies of Schottky barrier formation

It is shown here that much of the recent photoelectron spectroscopy literature describing the onset of pinning in adsorbate-semiconductor systems at low temperature must be reinterpreted in light of surface photovoltaic effects. Two sources of surface charging are discussed, both of which are strongly enhanced at low temperature. The surface photovoltage resulting from separation of electron-hole pairs by the electric field in the depletion region is usually the dominant source of surface potential shifts, and causes flattening of the semiconductor bands. In addition, surface charging due to photoemission into the vacuum may reverse bias a p-type diode at low temperatures, causing increase band bending.

Hecht, M. H.↗

Effect of neutron irradiation on the thermoelectric properties of SiGe alloys

Zone-leveled and hot-pressed n- and p-type Si80Ge20 alloys were irradiated with neutrons to a fluence of 4 x 1018 n/sq cm and to a fluence of 5.4 x 1019 n/sq cm at a temperature of approximately 200-300 C. The effect of neutron irradiation on the thermoelectric properties of these alloys was evaluated. The carrier concentration and mobility (and hence the resistivity) were measured at room temperature while the thermal diffusivity was measured at 177-192 C both before and after the irradiation and after each subsequent 2-h heat treatment at 350 C, 600, and 1000 C. The irradiation increased the resistivity significantly, but the thermal conductivity decreased only by about 10-15 percent. This tends to indicate that the radiation produced only small defects (single pairs and small vacancy chains). The samples all returned to almost exactly their preirradiation state after the 1000 C anneal. This indicates that SiGe alloys can be operated in this neutron fluence at high temperatures without a degradation of thermoelectric properties.

Vandersande, Jan W.↗

Experimental approaches for improving SiGe thermoelectric efficiency at JPL

Efforts to improve the thermoelectric efficiency of silicon-germanium alloys are discussed. These efforts are essentially focused on substantially enhancing carrier concentration levels and thus increasing the power factor values of n-type materials. With the help of thermodynamic phase diagram calculations, a combination of various crystal growth and dopant saturation techniques is used for this purpose. Bulk polycrystal growth of double-doped materials is achieved by zone leveling while a new method (the traveling heater method) for high-quality single-crystal growth of SiGe is being developed. Thin films of homogeneous single-crystalline multidoped Si80Ge20 have also been successfully grown from low-temperature melts to investigate combined dopant solid solubility variations. Very high carrier concentration levels were obtained by (P+As)-combined diffusion in zone-leveled and hot-pressed materials. The good overall understanding of doping mechanisms which has been achieved should enable optimization of the thermoelectric properties over this extended carrier concentration range. Reductions in thermal conductivity are being sought by introduction of very small phonon scattering centers (inert material) in the initial powders-precursors of Si-Ge alloys. This approach should benefit both n- and p-type materials.

Borshchevsky, Alex↗

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

Lin, True-Lon↗

Buried homojunction solar cells formed in p-InP during sputter deposition and hydrogen plasma processing

Although it is apparent that direct current (DC) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single-crystal p-type InP, the actual mechanism of type conversion of the InP surface is not clear. Since sputter deposition of In2O3 has also led to high-quality cells, it appears that Sn is not the cause of type conversion. To investigate the junction formation process further, experiments involving the use of a pure hydrogen plasma have been performed, resulting in type conversion of Fe-doped InP surfaces and in solar cells with efficiencies over 16 percent (global). The results confirm that sputter deposition is not necessary to form this type of buried homojunction solar cell, and they suggest a fabrication process that may be used with other relevant photovoltaic materials.

Gessert, T. A.↗

Optical absorption by free holes in heavily doped GaAs

Optical absorption in p-type GaAs with hole concentrations between 10 exp 19 and 10 exp 20/cu cm has been measured for wavelengths between 2 and 20 microns and compared with results of theoretical calculations. In contrast to previous measurements at lower doping levels, the occupied hole states are far from the zone center, where the heavy- and light-hole bands become parallel. This gives rise to a large joint density of states for optical transitions. It is found that the overall magnitude of the observed absorption is explained correctly by the theory, with both the free-carrier (indirect) and the inter-valence-band (direct) transitions contributing significantly to the total absorption. The strength of the absorption (a about 20,000/cm for N(A) = 5 x 10 exp 19/cu cm) is attractive for long-wavelength infrared-detector applications.

Huberman, M. L.↗