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Results for “optoelectronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2016

Conjugated polymers and their use in optoelectronic devices

The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Fused thiophene-based conjugated polymers and their use in optoelectronic devices

The present teachings relate to polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds generally include as repeating units at least one annulated thienyl-vinylene-thienyl (TVT) unit and at least one other pi-conjugated unit. The annulated TVT unit can be represented by the formula: ##STR00001## where Cy.sup.1 and Cy.sup.2 can be a five- or six-membered carbocyclic ring. The annulated TVT unit can be optionally substituted at any available ring atom(s), and can be covalently linked to the other pi-conjugated unit via either the thiophene rings or the carbocyclic rings Cy.sup.1 and Cy.sup.2. The other pi-conjugated unit can be a conjugated linear linker including one or more unsaturated bonds, or a conjugated cyclic linker including one or more carbocyclic and/or heterocyclic rings.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Optoelectronic apparatus enabled by dielectric metamaterials

An array of dielectric resonators is formed on the substrate of an optoelectronic device. Each resonator includes an active medium having an optical transition that is operative in a process of photodetection or photoemission. The dielectric resonators in the array are each dimensioned to provide a resonance that lies substantially at the frequency of the optical transition.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Organic optoelectronics with electrode buffer layers

There is disclosed an organic optoelectronic device comprising two electrodes in superposed relation comprising an anode and a cathode, at least one donor material and at least one acceptor material located between the two electrodes forming a donor-acceptor heterojunction, an anode buffer layer adjacent to the anode and a cathode buffer layer adjacent to the cathode, and an intermediate layer adjacent to at least one of the anode and cathode buffer layers, wherein when the intermediate layer is adjacent to the anode buffer layer, the intermediate layer is chosen to facilitate the transport of holes to the anode buffer layer, and when the intermediate layer is adjacent to the cathode buffer layer, the intermediate layer is chosen to facilitate the transport of electrons to the cathode buffer layer. Also disclosed are methods of making the same.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Optoelectronic memristor devices including one or more solid electrolytes with electrically controllable optical properties

An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10 −10 Siemens/cm to about 10 −4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).

Defferriere, Thomas↗
DOE OSTI2022

Modeling Vapor Transport Deposition of Metal-halide Perovskite Thin Films for Photovoltaic and Optoelectronic Devices

Over the past decade, metal halide perovskites (MHPs) have emerged as a promising materials platform for high-efficiency solar cells and low-cost optoelectronics. However, there are challenges that frustrate the large-scale manufacturing of MHP devices, including difficulty in controlling film composition, interface formation and their device instability under ambient conditions. Vapor processing offers an attractive path to manufacturability, while also opening the door to new opportunities in device design that could favorably impact ultrahigh efficiency tandem solar cells or overall stability. Emphasis here is on the use of an alternate processing methodology, vapor transport deposition (VTD), to deposit the MHP layer. In experimental work, we found that our deposition system had significant run-to-run variations in film thickness and composition. To understand and resolve these issues, we use COMSOL Multiphysics software to model the precursor deposition rate numerically, trying to guide the broad range of parameters in the system. The result can be matched with experimental data and provides insight into system hydrodynamics and molar transport effects. Finally, we show that chamber pressure is a key factor to scale up the VTD technique.

Hsu, Wan-Ju↗
DOE OSTI2019

Study on mechanically alloyed tin telluride screen-printed films for optoelectronic device applications

Narrow band gap semiconductor tin telluride (SnTe) was synthesized by mechanical alloying and its film was deposited on glass substrates by the economically and commercially feasible screen-printing technique. Deposition of the film was followed by sintering. Different analytical techniques were utilized to study the structure, surface morphology, elemental, optical and electrical characteristics of the film. X-ray diffraction analysis confirms that the film is polycrystalline in nature and exhibits rock salt type structure with preferred orientation of grains along (200) direction. EDAX spectrum confirms the presence of Sn and Te elements in the film. SEM image shows that the film exhibits uniform surface. The energy band gap of the film was determined by reflection spectra. The film is found to have a direct band gap of 0.37 eV. The dark electrical conductivity and activation energy of the film were measured in temperature range 300–380 K. Hall Effect measurement indicates that the film has p-type electrical conductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Optoelectronic properties of candidate photovoltaic Cu 2 PbSiS 4 , Ag 2 PbGeS 4 and KAg 2 SbS 4 semiconductors

High temperature synthesis and optical band gaps are reported for three candidate photovoltaic earth-abundant Cu 2 PbSiS 4 , Ag 2 PbGeS 4 and KAg 2 SbS 4 semiconductors. The reported synthesis method is found to be more advantageous for KAg 2 SbS 4 compared to the literature reported synthesis utilizing supercritical ammonia as a reaction medium, which produces a mixture of chalcogenide products. Based on optical diffuse reflectance data, Cu 2 PbSiS 4 , Ag 2 PbGeS 4 and KAg 2 SbS 4 have band gaps in the 1.6–1.8 eV range, and are shown to be stable in ambient air for a period of 6 weeks, making them attractive candidates for solar cell applications. Density functional theory (DFT) calculations indicate indirect band gaps for Cu 2 PbSiS 4 and KAg 2 SbS 4 , and a nearly direct band gap for Ag 2 PbGeS 4 with the calculated difference between indirect and direct gaps of only 30 meV. The p-type semiconducting behavior of Cu 2 PbSiS 4 , Ag 2 PbGeS 4 is also verified by the transport measurments. The 3D connectivity of the polyanionic networks in these compounds results in dispersive valence and conduction bands, which is especially noticeable for KAg 2 SbS 4 . This fact is in part attributed to the presence of formally pentavalent SbV in this compound leading to empty Sb 5s orbitals in the conduction band. Finally, we discuss the potential of Cu 2 PbSiS 4 , Ag 2 PbGeS 4 and KAg 2 SbS 4 for photovoltaic applications based on synthesis, stability, band gap and electronic structure considerations.

14 SOLAR ENERGY↗
DOE OSTI2023

Exploration, Prediction, and Experimental Verification of Structure and Optoelectronic Properties in I 2 -Eu-IV-X 4 (I = Li, Cu, Ag; IV = Si, Ge, Sn; X = S, Se) Chalcogenide Semiconductors

Recently, there has been extensive research into photovoltaic, thermoelectric, and nonlinear optical applications of chalcogenide semiconductors within the large set of defect-resistant I 2 -II-IV-X4 (I = Li, Cu, Ag; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) compounds. Five Eu-including compounds have previously been reported within this family, but a comparative study of possible structures and electronic properties of all 18 Eu-based combinations is still absent. Herein, we use hybrid density functional theory to study rare-earth-including I 2 -II-IV-X 4 semiconductors with Eu on the II site, in order to further understand this family and test the geometric tolerance factor approach (reported in our previous work) as a tool for predicting potential stable structures. We investigate how the exchange mixing parameter of the HSE06 density functional, α, affects the energetic positions of electronic levels, especially of the localized f-electron orbitals near the band edges of the extended semiconductor structures, using literature photoemission and band gap data of EuS for comparison. Lowest-energy quaternary structure candidates, energy band structures, and densities of states are computationally predicted for all 18 materials. Based on its predicted photovoltaics-relevant band gap, the previously unknown compound Cu 2 EuSnSe 4 was selected and synthesized. Furthermore, the experimental structure, lattice parameters, and band gap of Cu 2 EuSnSe 4 are consistent with the computational predictions, confirming a 1.55 eV band gap.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Preparation, characterization and electroluminescence studies of ZnO nanorods for optoelectronic device applications

In this work, ZnO nanorods were achieved by a simple chemical precipitation method in the presence of capping agent Poly Vinyl Pyrrolidone (PVP) at room temperature. X-Ray Diffraction (XRD) result indicates that the synthesized undoped ZnO nanorods have wurtzite hexagonal structure without any impurities. It has been seen that the growth orientation of the prepared ZnO nanorods were (101). XRD analysis revealed that the nanorods having the crystallite size 49 nm. The Scanning Electron Microscopy (SEM) image confirmed the size and shape of these nanorods. The diameter of nanorods has been found that 1.52 µm to 1.61 µm and the length of about 4.89 µm. It has also been found that at room temperature Ultra Violet Visible (UV-VIS) absorption band is around 355 nm (blue shifted as compared to bulk). Electroluminescence (EL) studies show that emission of light is possible at very small threshold voltage and increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Silver-containing polymer composition used in spacecraft and semiconductor optoelectronics control systems

The copolymer of the vinyl chloride-maleic anhydride and silver nano- and microparticle (70 wt %) composition is offered as a conductive adhesive for fixing various chips on the dielectric substrate. The wiring volume resistivity is up to 3.1×10{sup −8} Ohm×m. The adhesive strength of the silver-containing polymer composition (70% of Ag) applied under a shear on the dielectric substrate is 106 N/mm{sup 2}. Adhesive layers obtained from these substances have a high thermal conductivity up to λ = 199.93 W/m×K that depends on the amount of Ag in the polymer composition.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10{sup −5} (Ω.cm){sup −1}, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

77 NANOSCIENCE AND NANOTECHNOLOGY↗