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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Phase Synergy Enables Low‐Power Ferroelectric Switching in HfO 2 Epitaxial Films

HfO 2 -based ferroelectric materials have emerged as leading candidates for next-generation non-volatile memory technologies, owing to their nanoscale robust ferroelectricity and complementary metal–oxide–semiconductor (CMOS) compatibility. However, challenges and debates persist in advancing and comprehensively understanding their ferroelectric behavior. In particular, conventional approaches typically regard non-ferroelectric phases as detrimental and primarily focus on suppressing their formation, yet overlooking their potentially synergistic contributions—particularly those of the tetragonal (T) phase. Here, we unambiguously clarify the beneficial role of the T-phase and introduce a phase-boundary engineering strategy that deliberately harnesses it to enhance ferroelectricity in HfO 2 films. By stabilizing optimal coherent boundaries between ferroelectric orthorhombic (O) and T phases in epitaxial La-doped HfO 2 films, we achieve significant improvements in ferroelectric properties—doubling the remanent polarization (P r ∼ 30 µC/cm 2 ) and substantially reducing the coercive field (E c ∼ 3 MV/cm) by 30% compared to low-La doped samples without such boundaries. Atomic-scale electron microscopy reveals the structural nature of the atomically sharp, coherent O–T boundaries. Combined with deep-learning enhanced molecular dynamics simulations, our results unravel that these boundaries facilitate intermediate polarization states that lower the switching energy barrier. Consequently, phase coexistence shifts from an inherent drawback to a tunable design element, offering a broadly applicable route to ultra-low-power HfO 2 -based nanoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1991

Advanced Si IR detectors using molecular beam epitaxy

SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

Lin, T. L.↗
NASA NTRS1997

Elucidation of Free Radical and Optogalvanic Spectroscopy Associated with Microgravity Combustion via Conventional and Novel Laser Platforms

Combustion studies under both normal gravity and microgravity conditions depend a great deal on the availability and quality of the diagnostic systems used for such investigations. Microgravity phenomena are specially susceptible to even small perturbations and therefore non-intrusive diagnostic techniques are of paramount importance for successful understanding of reduced-gravity combustion phenomena. Several non-intrusive diagnostic techniques are available for probing and delineating normal as well as reduced gravity combustion processes, such as Rayleigh scattering, Raman scattering, Mie scattering, velocimetry, interferometric and Schlieren techniques, emission and laser-induced fluorescence (LIF) spectroscopy. Our approach is to use the LIF technique as a non-intrusive diagnostic tool for the study of combustion-associated free radicals and use the concomitant optogalvanic transitions to accomplish precise calibration of the laser wavelengths used for recording the excitation spectra of transient molecular species. In attempting to perform spectroscopic measurements on chemical intermediates, we have used conventional laser sources as well as new and novel platforms employing rare-earth doped solid-state lasers. Conventional (commercially available) sources of tunable UV laser radiation are extremely cumbersome and energy-consuming devices that are not very suitable for either in-space or in-flight (or microgravity drop tower) experiments. Traditional LIF sources of tunable UV laser radiation involve in addition to a pump laser (usually a Nd:YAG laser with an attached frequency-doubling stage), a tunable dye laser. In turn, the dye laser has to be provided with a dye circulation system and a subsequent stage for frequency-doubling of the dye laser radiation, together with a servo-tuning system (termed the 'Autotracker') to follow the wavelength changes and also an optical system (called the 'Frequency Separator') for separation of the emanating visible and UV beams. In contrast to this approach, we have devised an alternate arrangement for recording LIF excitation spectra of free radicals (following appropriate precursor fragmentation) that utilizes a tunable rare-earth doped solid state laser system with direct UV pumping. We have designed a compact and portable tunable UV laser system incorporating features necessary for both in-space and in-flight spectroscopy experiments. For the purpose of LIF excitation, we have developed an all-solid-state tunable UV laser that employs direct pumping of the solid-state UV-active medium employing UV harmonics from a Nd:YAG laser. An optical scheme with counterpropagating photolysis and excitation beams focused by suitable lenses into a reaction vacuum chamber was employed.

Misra, Prabhakar↗
DOE OSTI2021

Polyamorphism in a solute-lean Al–Ce metallic glass

Polyamorphism discovered in lanthanide-rich metallic glasses (MGs) has been attributed to the electronic transition of the lanthanide element as a solvent element. In this work, we report that pressure-induced polyamorphism still exists in a Ce-poor Al 93 Ce 7 binary MG where the 4f electron element serves as a solute and solute–solute avoidance is expected. The polyamorphic transition, observed by in situ high-pressure synchrotron x-ray diffraction, is accompanied by a volume collapse of ~0.78% and occurs over a narrow pressure range from ~0.8 to ~1.8 GPa. Further synchrotron Ce L 3 -edge x-ray absorption spectroscopy measurements reveal that pressure-induced 4f electron delocalization underlies the polyamorphic transition. Molecular dynamics simulations confirm that the Ce atoms in the MG are completely isolated by the solvent Al atoms. This result demonstrates that 4f element-bearing alloys with extremely dilute concentrations can also exhibit polyamorphic states originating from electronic transitions, extending the compositional space of polyamorphism of MGs into very dilute regions. Our work suggests that tunable properties under compressive stress could be achieved in MGs by even minor doping of elements prone to electronic transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Elucidating Interfacial Phenomena between Solid-State Electrolytes and the Sulfur-Cathode of Lithium–Sulfur Batteries

Sulfide solid-state electrolytes are promising materials to be used in Li–S batteries because they have the potential to mitigate some of the challenges currently faced by this technology such as the dissolution of polysulfide species and the flammability of conventional organic-based electrolytes. Nevertheless, the electrode/electrolyte interfaces are not well-understood yet. In this study, we use density functional theory and ab initio molecular dynamics simulations to investigate the formation of the cathode–electrolyte interface at two limiting states of charge: S 8 and Li 2 S. β-Li 3 PS 4 and two lithium halide-doped sulfides (Li 6 PS 5 Cl and Li 7 P 2 S8I) were selected because of their Li-ion superionic conductivity and compatibility with sulfur electrodes. The work of adhesion and interfacial energy of the interfaces were calculated as descriptors of the interfacial properties, and then the mechanisms of the interfacial reactions taking place were characterized. Lastly, a charge transfer analysis is presented, suggesting that, overall, the S 8 electrode will oxidize the electrolyte, whereas the fully discharged Li 2 S cathode will reduce it at different extents depending on the reactivity of the exposed facet.

25 ENERGY STORAGE↗
DOE OSTI2020

Visualizing Energy Transfer at Buried Interfaces in Layered Materials Using Picosecond X-Rays

Understanding the fundamentals of nanoscale heat propagation is crucial for next-generation electronics. For instance, weak van der Waals bonds of layered materials are known to limit their thermal boundary conductance (TBC), presenting a heat dissipation bottleneck. In this paper we present a new non-destructive method to probe heat transport in nanoscale crystalline materials using time-resolved x-ray measurements of photo-induced thermal strain. This technique directly monitors time-dependent temperature changes in the crystal and the subsequent relaxation across buried interfaces by measuring changes in the c-axis lattice spacing after optical excitation. We investigate films of five different layered transition metal dichalcogenides MoX 2 [X= S, Se, Te] and WX 2 [X= S, Se] as well as graphite and a W-doped alloy of MoTe 2 , on c-plane sapphire substrates, finding TBC values in the range 10-30 MWm -2 K -1 at room temperature. In conjunction with molecular dynamics simulations, we show that the high thermal resistances are a consequence of weak interfacial van der Waals bonding and low phonon irradiance. This work paves the way for an improved understanding of thermal bottlenecks in emerging three-dimensional heterogeneously integrated technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Enhancing the Conductivity and Thermoelectric Performance of Semicrystalline Conducting Polymers through Controlled Tie Chain Incorporation

Abstract Conjugated polymers are promising materials for thermoelectric applications, however, at present few effective and well‐understood strategies exist to further advance their thermoelectric performance. Here a new model system is reported for a better understanding of the key factors governing their thermoelectric properties: aligned, ribbon‐phase poly[2,5‐bis(3‐dodecylthiophen‐2‐yl)thieno[3,2‐b]thiophene] (PBTTT) doped by ion‐exchange doping. Using a range of microstructural and spectroscopic methods, the effect of controlled incorporation of tie‐chains between the crystalline domains is studied through blending of high and low molecular weight chains. The tie chains provide efficient transport pathways between crystalline domains and lead to significantly enhanced electrical conductivity of 4810 S cm −1 , which is not accompanied by a reduction in Seebeck coefficient or a large increase in thermal conductivity. Respectable power factors of 173 µW m −1 K −2 are demonstrated in this model system. The approach is generally applicable to a wide range of semicrystalline conjugated polymers and could provide an effective pathway for further enhancing their thermoelectric properties and overcome traditional trade‐offs in optimization of thermoelectric performance.

Chemistry↗
DOE OSTI2022

Single Atoms Anchored in Hexagonal Boron Nitride for Propane Dehydrogenation from First Principles

We report single-atom catalysts embedded in N-doped graphene have attracted great interest recently, but the hexagonal boron nitride (h-BN) is much less explored as a support. Using first principles density function theory and molecular dynamics, here we investigate the stability of Pt, Au, and Ru single atoms anchored at B and N vacancies on h-BN. We find that Pt and Ru single atoms are much more stable than Au on h-BN. We further examine propane dehydrogenation on these single-atom catalysts and find that Pt 1 at the B vacancy in h-BN and Ru 1 at the N vacancy in h-BN show excellent activity for propane dehydrogenation, as evidenced by low energy barriers for both dehydrogenation steps. Our work suggests that Pt and Ru single atoms anchored at vacancy sites in h-BN could be promising for propane dehydrogenation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Vanadium Substitution Dictates H Atom Uptake at Lindqvist-type Polyoxotungstates

Understanding how modification of molecular structures changes the thermochemistry of H atom uptake can provide design criteria for the formation of highly active catalysts for reductive transformations. Herein, we describe the effect of doping an atomically precise polyoxotungstate with vanadium on proton-coupled electron transfer (PCET) reactivity. The Lindqvist-type polyoxotungstate [W 6 O 19 ] 2– displays reversible redox chemistry, which was found to be unchanged in the presence of acid, indicating an inability to couple reduction with protonation. However, the incorporation of a single vanadium center into the structure significantly changes the reactivity, and the potential required for one-electron reduction of [VW 5 O 19 ] 3– was shown to vary with the strength of the acid added. Construction of a potential-pK a diagram allowed assessment of the thermodynamics of H atom uptake, indicating BDFE(O–H) ≈ 64 kcal/mol, while chemical synthesis of the reduced/protonated derivative (TBA) 3 [VW 5 O 19 H] was used to probe the position of protonation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1972

Investigative study of holographic recording materials development

The potential of certain cis-trans isomers and doped LiNbO3 for the holographic read/write/erase memory application was investigated. The cis-trans work involved the photochemical investigation of a number of potential materials as well as specific molecular engineering efforts on alpha-methyl stilbene and its derivatives. These efforts resulted in an increase in the change in index of refraction, and thereby, in potential recording utility, of an order of magnitude. The work on LiNbO3 was directed toward a preliminary investigation of the dynamics of the writing process. Several samples and a variety of writing conditions were investigated. An unexpected and as yet unexplained improvement in material behavior with continued recycling was observed. In addition, some effort was devoted to an analysis of the physical conditions under which several current theories of the optical damage process are valid.

Source record↗
NASA NTRS1987

Double-diffusive effects during solidification

When a fluid contains two diffusing components with different molecular diffusivities, such as heat and solute concentration, convective motion may be generated when potential energy is released owing to differential diffusion. In the solidification of binary alloys and doped semiconductors, temperature and concentration gradients do exist simultaneously. If these gradients are aligned in a suitable manner, convection may ensue. In the case of the binary alloy, such convection may extend through the mushy zone and may be the cause of macrosegregations. In the case of doped semiconductors, the convective motion may cause the nonuniform distribution of dopant in the product. In this paper, the fundamentals of double-diffusive convection will be reviewed, and its effect on solidification will be discussed.

Chen, C. F.↗
NASA NTRS1990

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long-wavelength infrared detectors

The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped p(x)-Si(1-x)Ge(x) layer is required for strong IR absorption to generate photoexcited holes. The Si(1-x)Ge(x) layers are grown by molecular beam epitaxy, with boron concentrations up to 10 to the 20th/cu cm achieved by using an HBO2 source. Photoresponse at wavelengths ranging from 2 to 10 microns has been obtained with quantum efficiencies above 1 percent. The tailorable cutoff wavelength of the HIP detector has been demonstrated by varying the Ge composition ratio in the Si(1-x)Ge(x) layers.

Lin, T. L.↗
DOE OSTI2023

Spin Solar Cell Phenomenon on a Single-Molecule Magnet (SMM) Impacted CoFeB-Based Magnetic Tunnel Junctions

The single-molecule magnet (SMM) is demonstrated here to transform conventional magnetic tunnel junctions (MTJs), a memory device used in present-day computers, into solar cells. For the first time, we demonstrated an electronic spin-dependent solar cell effect on an SMM-transformed MTJ under illumination from unpolarized white light. We patterned cross-junction-shaped devices to form a CoFeB/MgO/CoFeB-based MTJ. The MgO barrier thickness at the intersection between the two exposed junction edges was less than the SMM extent, which enabled the SMM molecules to serve as channels to conduct spin-dependent transport. The SMM channels yielded a region of long-range magnetic ordering around these engineered molecular junctions. Our SMM possessed a hexanuclear [Mn 6 (μ 3 -O) 2 (H 2 N-sao) 6 (6-atha) 2 (EtOH) 6 ] [H 2 N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate] complex and thioesters end groups to form bonds with metal films. SMM-doped MTJs were shown to exhibit a solar cell effect and yielded ≈80 mV open-circuit voltage and ≈10 mA/cm 2 saturation current density under illumination from one sun equivalent radiation dose. A room-temperature Kelvin Probe AFM (KPAFM) study provided direct evidence that the SMM transformed the electronic properties of the MTJ’s electrodes over a lateral area in excess of several thousand times larger in extent than the area spanned by the molecular junctions themselves. As a result, the decisive factor in observing this spin-photovoltaic effect is the formation of SMM spin channels between the two different ferromagnetic electrodes, which in turn is able to catalyze the long-range transformation in each electrode around the junction area.

14 SOLAR ENERGY↗
NASA NTRS2005

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Blacksberg, Jordana↗
NASA NTRS1989

Polyimide Matrix composites: Polyimidesulfone/LARC-TPI (1:1) blend

Polyimide matrix composites were fabricated from unidirectional unsized AS-4 carbon fiber and a doped 1:1 blend of two polyimides: benzophenone dianhydride-3,3'-diamino diphenylsulfone (PISO2) and benzophenone dianhydride-3,3'-diamino benzophenone (LARC-TPI). To enhance melt flow properties, the molecular weight of the PISO2 was controlled by end-capping with phthalic anhydride and addition of 5 percent by weight p-phenylene diamine-phthalic anhydride bisamic acid dopant. Prepreg was drum-wound using a diglyme slurry comprised of the soluble polyamideacid of PISO2, the soluble bisamideacid of the dopant, and the insoluble imidized LARC-TPI powder. Melt flow studies with a rotary rheometer and parallel plate plastometer on neat resin and prepreg helped develop an optimum cure cycle. Composite mechanical properties at room and elevated temperatures, dry and moisture-saturated, were evaluated, including short beam shear strength and flexure, tensile, shear, and compression properties. Two 18 in. x 24 in. skin-stringer panels were fabricated, one of which was tested in compression to failure.

Johnston, Norman J.↗
NASA NTRS1990

New heterojunction LWIR detector options

Researchers investigate the heterojunction internal photoemission (HIP) approach that potentially offers long wavelength infrared (LWIR) photovoltaic detector performance (single pixel) that is competitive with the best of other approaches being considered. Most significantly, this approach offers a relatively simple device technology that promises producible and uniform FPA's. Researchers emphasize an exciting process based on intervalence band absorption. They investigate both III-V and Si-based heterojunctions grown by molecular beam epitaxy (MBE) in which the barrier can be tailored to the desired cutoff wavelength. In addition, MBE allows one to optimize the device structure with precise control of doping profiles and layer thicknesses, and perform band structure engineering by control of composition and heterojunction strain. Researchers also consider free carrier absorption in heterojunctions. Acceptable absorption coefficients can be achieved in very heavily n(exp +) doped semiconductor layers (approx. equals 10(exp 20)cm(exp -3). However, in this case the appreciable filling of conduction band states leads to a Schottky-like photoresponse with a gradual (quadratic) turn-on above threshold. A more satisfactory approach would be to use p(exp +) doping so that with the higher density of states in the heavy hole valence band there would be a narrow band of occupied states. This gives the desirable effect of a more rapid (linear) turn-on above threshold. Unfortunately, the higher hole effective mass also reduces (inversely) the free carrier absorption. For this and other reasons, the intervalence band absorption process looks much more promising.

Maserjian, Joseph↗
DOE OSTI2022

A Mineral-Doped Micromodel Platform Demonstrates Fungal Bridging of Carbon Hot Spots and Hyphal Transport of Mineral-Derived Nutrients

Fungal species are foundational members of soil microbiomes, where their contributions in accessing and transporting vital nutrients is key for community resilience. To date, the molecular mechanisms underlying fungal mineral weathering and nutrient translocation in low-nutrient environments remain poorly resolved due to the lack of a platform for spatial analysis of biotic weathering processes.

54 ENVIRONMENTAL SCIENCES↗