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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

FeS colloids – formation and mobilization pathways in natural waters

For this study, we have used synchrotron-based X-ray absorption spectroscopy (structure of Fe–S clusters), transmission electron microscopy (solid-phase crystallinity), Fourier-transform ion-cyclotron-resonance mass spectrometry (identity and composition of natural organic carbon compounds), inductively coupled plasma optical emission spectrometry (total aqueous Fe), and the revised ferrozine method (aqueous Fe( II ) and Fe( III ) concentrations) to determine the stability and nature of colloids generated by sulfidation of ferrihydrite nanoparticles in the absence and presence of organic compounds. We observed that reductive dissolution of ferrihydrite by aqueous sulfide generates nm-scale FeS clusters. Their subsequent aggregation, which promotes settling of FeS aggregates into the solid fraction, was directly correlated with sulfide/Fe ratio. At sulfide/Fe ratios ≤0.5, FeS clusters and larger colloids remained in suspension for at least 14 days (and up to several months). At sulfide/Fe ratios >0.5, sulfidation reaction rates were rapid and FeS cluster aggregation was accelerated. Moreover, the presence of organic compounds increased the time of suspension of FeS colloids, whereas increased ionic strength inhibited the generation of FeS colloids. We present a general conceptual model to predict when and where FeS colloids can form and enhance or inhibit the mobility of contaminants and nutrients associated with them. Our study indicates that in lowsalinity fresh groundwater systems poor in sulfate (i.e. low sulfidation; lakes, floodplains, peatlands etc.), the ferrihydrite sulfidation reaction generates aqueous FeS clusters and larger colloids that remain suspended over long time periods, thus mobilizing a substantial fraction of the total aqueous Fe and S.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2023

A coarse-grained simulation model for colloidal self-assembly via explicit mobile binders

Colloidal particles with mobile binding molecules constitute a powerful platform for probing the physics of self-assembly. Binding molecules are free to diffuse and rearrange on the surface, giving rise to spontaneous control over the number of droplet–droplet bonds, i.e., valence, as a function of the concentration of binders. This type of valence control has been realized experimentally by tuning the interaction strength between DNA-coated emulsion droplets. Optimizing for valence two yields droplet polymer chains, termed ‘colloidomers’, which have recently been used to probe the physics of folding. To understand the underlying self-assembly mechanisms, here we present a coarse-grained molecular dynamics (CGMD) model to study the self-assembly of this class of systems using explicit representations of mobile binding sites. Further, we explore how valence of assembled structures can be tuned through kinetic control in the strong binding limit. More specifically, we optimize experimental control parameters to obtain the highest yield of long linear colloidomer chains. Subsequently tuning the dynamics of binding and unbinding via a temperature-dependent model allows us to observe a heptamer chain collapse into all possible rigid structures, in good agreement with recent folding experiments. Our CGMD platform and dynamic bonding model (implemented as an open-source custom plugin to HOOMD-Blue) reveal the molecular features governing the binding patch size and valence control, and opens the study of pathways in colloidomer folding. This model can therefore guide programmable design in experiments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Mobility Gaps between Low-Income and Not Low-Income Households: A Case Study in New York State

Understanding the travel challenges faced by low-income residents has always been and continues to be one of the most important transportation equity topics. This study aims to explore the mobility gaps between low-income households (HHs) and not low-income HHs, and how the gaps vary within different socio-demographic population groups in New York State (NYS). The latest National Household Travel Survey data was used as the primary data source for the analysis. The study first employed the K-prototype clustering algorithm to categorize the HHs in NYS based on their socio-demographic attributes. Five population groups were identified based on nine different household (HH) features such as HH size, vehicle ownership, and elderly status of its members. Then, the mobility differences, measured by trip frequency, trip distance, travel time, and person miles traveled, were examined among the five population groups. Results suggest that the individuals in low-income HHs consistently took fewer trips and made shorter trips compared to their not low-income counterparts in NYS. The travel distance gaps were most obvious among white HHs with more vehicles than drivers. In addition, while the population from low-income HHs made shorter trips on average (2.7 mi shorter per trip), they experienced longer travel time than those from not low-income HHs (1.8 min longer per trip). These key findings provide a deeper understanding of the travel behavior disparities between low-income and not low-income households. The findings could also support policymakers and transportation planners in addressing the critical needs of residents in low-income households in NYS and provide inputs for designing a more equitable transportation system.

Liu, Yuandong↗
DOE OSTI2023

The Convergence of Vehicle Electrification and Automation - Enabling Sustainable Automated Mobility Districts

The transportation industry is entering a new frontier with three major simultaneous transformations: electrification, automation, and on-demand services. All three directly affect the same spaces of vehicle technology, infrastructure, and system operational performance. Further, each area of change adds its own driving forces of complexity to the others' design challenges. This paper explores these transformations, framing the implications for vehicle technology and infrastructure and their impact on operating concepts and strategies, which in turn impact the sustainability of the transportation infrastructure in the built environment. Specifically, this paper examines battery-electric vehicles operating in a fully automated fleet within an "automated mobility district" (AMD) setting with multiple on-demand services. From this examination, the paper assesses the implications for transportation electrification, comparing and contrasting traditional fixed-route services with those of on-demand transit and automated transit networks, including the trade-offs between vehicle range (battery capacity), charging parameters, power availability, and operations predictability with respect to policy and infrastructure configurations. The paper also addresses the configuration and management of boarding and alighting zones (also called pickup and drop-off zones), and the need for complementary infrastructure intelligence at intersections and curbs. Finally, conclusions are drawn with respect to the system integration and analysis needs for AMDs regarding resilience and sustainability of mobility infrastructure.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

Enhancing the electron mobility in Si-doped (010) β-Ga 2 O 3 films with low-temperature buffer layers

We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga 2 O 3 epitaxial thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 °C) un-doped Ga 2 O 3 buffer was grown, followed by a transition layer to a high-temperature (HT, 810 °C) Si-doped Ga 2 O 3 channel layers without growth interruption. The (010) Ga 2 O 3 Fe-doped substrate cleaning uses solvent cleaning, followed by additional hydrofluoric acid (49% in water) treatment for 30 min before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer–substrate interface that originates from the substrate polishing process or contamination from the ambient. From secondary ion mass spectroscopy (SIMS) analysis, the Si peak atomic density at the substrate interface is found to be several times lower than the Fe atomic density in the substrate—indicating full compensation. The elimination of the parasitic electron channel at the epi–substrate interface was also verified by electrical (capacitance–voltage profiling) measurements. In the LT-grown (600 °C) buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp, with a decay rate of ∼9 nm/dec. X-ray off-axis rocking curve ω-scans show very narrow full width at half maximum (FWHM) values, similar to the as-received substrates. These channels show record high electron mobility in the range of 196–85 cm 2 /V⋅s in unintentionally doped and Si-doped films in the doping range of 2 × 10 16 –1 × 10 20 cm −3 . Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT buffers. Record high electron Hall mobility of 110 cm 2 /V⋅s was measured for sheet charge density of 9.2 × 10 12 cm −2 . This substrate cleaning, combined with the LT buffer scheme, shows the potential of designing Si-doped β-Ga 2 O 3 channels with exceptional transport properties for high-performance Ga 2 O 3 -based electron devices.

Bhattacharyya, Arkka↗
DOE OSTI2024

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Thermal annealing is a widely used strategy to enhance semiconductor device performance. However, the process is complex for multi-material multi-layered semiconductor devices, where thermoelastic stresses from lattice constant and thermal expansion coefficient mismatch may create more defects than those annealed. We propose an alternate low temperature annealing technique, which utilizes the electron wind force (EWF) induced by small duty cycle high density pulsed current. To demonstrate its effectiveness, we intentionally degrade AlGaN/GaN high electron mobility transistors (HEMTs) with accelerated OFF-state stressing to increase ON-resistance ∼182.08% and reduce drain saturation current ∼85.82% of pristine condition at a gate voltage of 0 V. We then performed the EWF annealing to recover the corresponding values back to ∼122.21% and ∼93.10%, respectively. The peak transconductance, degraded to ∼76.58% of pristine at the drain voltage of 3 V, was also recovered back to ∼92.38%. This recovery of previously degraded transport properties is attributed to approximately 80% recovery of carrier mobility, which occurs during EWF annealing. We performed synchrotron differential aperture x-ray microscopy measurements to correlate these annealing effects with the lattice structural changes. We found a reduction of lattice plane spacing of (001) planes and stress within the GaN layer under the gate region after EWF annealing, suggesting a corresponding decrease in defect density. Application of this low-temperature annealing technique for in-operando recovery of degraded electronic devices is discussed.

Physics↗
DOE OSTI2024

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Perpendicular crossing chains enable high mobility in a noncrystalline conjugated polymer

The nature of interchain π-system contacts, and their relationship to hole transport, are elucidated for the high-mobility, noncrystalline conjugated polymer C16-IDTBT by the application of scanning tunneling microscopy, molecular dynamics, and quantum chemical calculations. The microstructure is shown to favor an unusual packing motif in which paired chains cross-over one another at near-perpendicular angles. By linking to mesoscale microstructural features, revealed by coarse-grained molecular dynamics and previous studies, and performing simulations of charge transport, it is demonstrated that the high mobility of C16-IDTBT can be explained by the promotion of a highly interconnected transport network, stemming from the adoption of perpendicular contacts at the nanoscale, in combination with fast intrachain transport.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors

Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistors (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can be either tensile or compressive, are difficult to detect and eliminate because of their highly localized nature. We propose that their high-stored internal energy makes potential sites for defect nucleation sites under radiation, particularly if their locations coincide with the electrically sensitive regions of a transistor. In this study, we validate this hypothesis with molecular dynamic simulation and experiments exposing both pristine and annealed HEMTS to 2.8 MeV Au +3 irradiation. Our unique annealing process uses mechanical momentum of electrons, also known as the electron wind force (EWF) to mitigate the residual stress at room temperature. High-resolution transmission electron microscopy and cathodoluminescence spectra reveal the reduction of point defects and dislocations near the two-dimensional electron gas region of EWF-treated devices compared to pristine devices. The EWF-treated HEMTs showed relatively higher resilience with approximately 10% less degradation of drain saturation current and ON-resistance and 5% less degradation of peak transconductance. Both mobility and carrier concentration of the EWF-treated devices were less impacted compared to the pristine devices. Our results suggest that the lower density of nanoscale stress localization contributed to the improved radiation tolerance of the EWF-treated devices. Intriguingly, the EWF is found to modulate the defect distribution by moving the defects to electrically less sensitive regions in the form of dislocation networks, which act as sinks for the radiation induced defects and this assisted faster dynamic annealing.

AlGaN/GaN HEMTs↗
DOE OSTI2020

Band gap renormalization, carrier mobilities, and the electron-phonon self-energy in crystalline naphthalene

Organic molecular crystals are expected to feature appreciable electron-phonon interactions that influence their electronic properties at zero and finite temperature. Here, we report first-principles calculations and an analysis of the electron-phonon self-energy in naphthalene crystals. We compute the zero-point renormalization and temperature dependence of the fundamental band gap, and the resulting scattering lifetimes of electronic states near the valence- and conduction-band edges employing density functional theory. Further, our calculated phonon renormalization of the GW-corrected quasiparticle band structure predicts a fundamental band gap of 5 eV for naphthalene at room temperature, in good agreement with experiments. From our calculated phonon-induced electron lifetimes, we obtain the temperature-dependent mobilities of electrons and holes in good agreement with experimental measurements at room temperature. Finally, we show that an approximate energy self-consistent computational scheme for the electron-phonon self-energy leads to the prediction of strong satellite bands in the electronic band structure. We find that a single calculation of the self-energy can reproduce the self-consistent results of the band gap renormalization and electrical mobilities for naphthalene, provided that the on-the-mass-shell approximation is used, i.e., if the self-energy is evaluated at the bare eigenvalues.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Role of phonon softening induced by anisotropic fluctuations in the enhanced mobility at free glassy surfaces

The surface of a glassy material exhibits enhanced mobility compared to the bulk counterpart, however the underlying mechanism for this remains elusive. Herein, we present studies of the dynamical properties of a prototypical glass-forming metallic liquid Zr 50 Cu 50 as a function of the distance from both the free surface and pinned surface using molecular dynamics simulations. We found that the surface mobility increases gradually on approaching the free surface, with a concomitant increase of the non-Gaussianity. The phonon density of states at the free surface exhibits lower characteristic frequencies than in the bulk and pinned surface. These findings suggest phonon softening caused by anisotropic fluctuations at free surfaces as an alternative physical mechanism leading to the enhanced dynamics at free glassy surfaces from the perspective of collective excitations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional scattering mechanisms such as, for example, impurity and grain-boundary scattering. Here, in this paper, we investigate the effect of ionized-impurity scattering on the carrier mobility. We model the analytical impurity potential parameterized from first principles by a collection of randomly distributed Coulomb scattering centers, and we include this relaxation channel into the ab initio Boltzmann transport equation, as implemented in the EPW code. We demonstrate this methodology by considering silicon, silicon carbide, and gallium phosphide, for which detailed experimental data are available. Our calculations agree well with experiments over a broad range of temperatures and impurity concentrations. For each compound investigated here, we compare the relative importance of electron-phonon scattering and ionized-impurity scattering, and we critically assess the reliability of Matthiessen's rule. We also show that an accurate description of dielectric screening and carrier effective masses can improve quantitative agreement with experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Working principles of doping-well structures for high-mobility two-dimensional electron systems

Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultrahigh-mobility 2DESs, the working principles of the doping-well structure have not been reported. As such, here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Monolayer 2D semiconducting tellurides for high-mobility electronics

Discovery and design of two-dimensional (2D) materials with suitable band gaps and high carrier mobility are of vital importance for the photonics, optoelectronics, and high-speed electronics. In this work, based on first principles calculations using density functional theory with Perdew-Burke-Ernzerhof and Heyd-Scuseria-Ernzerhoffunctionals, we introduce a family of monolayer isostructural semiconducting tellurides MNTe 4 , with M={Ti,Zr,Hf} and N={Si,Ge}. We find that these compounds have been identified to possess direct band gaps from 1.0 to 1.31 eV, which are well suited for photonics and optoelectronics applications. Additionally, anisotropic in-plane transport behavior is observed, and small electron and hole (0.11–0.15m e ) effective masses are identified along the dominant transport direction. Ultrahigh carrier mobility is predicted for this family of 2D compounds, which host great promise for potential applications in high-speed electronic devices. Furthermore, detailed analysis of electronic structures reveals the origins of the promising properties of this unique class of 2D telluride materials.

2-dimensional systems↗
DOE OSTI2024

Intrinsic Limits of Charge Carrier Mobilities in Layered Halide Perovskites

Layered halide perovskites have emerged as potential alternatives to three-dimensional (3D) halide perovskites due to their improved stability and larger material phase space, allowing fine tuning of structural, electronic, and optical properties. However, their charge carrier mobilities are significantly smaller than those of 3D halide perovskites, which has a considerable impact on their application in optoelectronic devices. Here, we employ state-of-the-art approaches to unveil the electron-phonon mechanisms responsible for the diminished transport properties of layered halide perovskites. Starting from a prototypical A M X 3 halide perovskite, we model the case of n = 1 and n = 2 layered structures and compare their electronic and transport properties to the 3D reference. The electronic and phononic properties are investigated within density functional theory (DFT) and density functional perturbation theory (DFPT), while transport properties are obtained via the Boltzmann transport equation. The vibrational modes contributing to charge carrier scattering are investigated and associated with polar-phonon scattering mechanisms arising from the long-range Fröhlich coupling and deformation-potential scattering processes. Our investigation reveals that the lower mobilities in layered systems primarily originate from the increased electronic density of states at the vicinity of the band edges, while the electron-phonon coupling strength remains similar. Such an increase is caused by the dimensionality reduction and the break in octahedra connectivity along the stacking direction. Our findings provide a fundamental understanding of the electron-phonon coupling mechanisms in layered perovskites and highlight the intrinsic limitations of the charge carrier transport in these materials. Published by the American Physical Society 2024

Cucco, Bruno (ORCID:0000000331564143)↗
DOE OSTI2022

Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure

Capacitance–voltage (C–V ) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at T = 4 – 35 K are presented here. In this work, two capacitance plateaus due to density saturation of the 2DEG in the buried Si quantum well (QW) are observed and explained by a model of surface tunneling. The peak mobility at 4 K is 4.1 × 10 5 cm 2 /V·s and enhanced by a factor of 1.97 at an even lower carrier density compared to the saturated carrier density, which is attributed to the effect of remote carrier screening. At T = 35 K, the mobility enhancement with a factor of 1.35 is still observed, which suggests the surface tunneling is still dominant.

42 ENGINEERING↗
DOE OSTI2020

Skyrmion dynamics and transverse mobility: skyrmion Hall angle reversal on 2D periodic substrates with dc and biharmonic ac drives

Here we numerically examine the dynamics of a skyrmion interacting with a two-dimensional periodic substrate under dc and biharmonic ac drives. We show that the Magnus force of the skyrmion produces circular orbits that can resonate with the ac drive and the periodicity of the substrate to create quantized motion both parallel and perpendicular to the dc drive. The skyrmion Hall angle exhibits a series of increasing and/or decreasing steps along with strongly fluctuating regimes. In the phase locked regimes, the skyrmion Hall angle is constant and the skyrmion motion consists of periodic orbits encircling an integer number of obstacles per every or every other ac drive cycle. We also observe phases in which the skyrmion moves at 90° with respect to the driving direction even in the presence of damping, a phenomenon called absolute transverse mobility that can exhibit reentrance as a function of dc drive. When the biharmonic ac drives have different amplitudes in the two directions, we find regimes in which the skyrmion Hall angle shows a sign reversal from positive to negative, as well as a reentrant pinning effect in which the skyrmion is mobile at low drives but becomes pinned at higher drives. These behaviors arise due to the combination of the Magnus force with the periodic motion of the skyrmions, which produce Shapiro steps, directional locking, and ratchet effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

MEP: Mobility Energy Productivity Metric

In response to the need to assess fundamental improvements in mobility as technology provides new modes, methods, and opportunities in urban areas to connect people with goods, services, and employment, a mobility-energy productivity score (MEPS) has been developed. The MEPS fundamentally measures the potential of a multi-modal system to connect a person to a variety of services and activities that define a high-quality of life. The MEPS is measured relative to the convenience and energy needed to provide connectivity. Fundamentally derived from accessibility theory, the MEPS advances practice by using readily available travel time data (either from web-based APIs or outputs from an urban transportation model) combined with established parameters that reflect the energy intensity of various travel modes, and relative frequency of activity engagement. The construction of the MEPS allows for aggregation and disaggregation to the appropriate spatial, modal, and trip purpose resolution, as analysis needs dictate. The MEPS could be used to compare alternative futures related to technology, infrastructure investment, or policy, providing a much needed tool for planners, researchers, and analysts. In other words, the metric measures how efficiently connected a place is.

Hou, Yi↗