Solid-state microwave electronics
Solid state microwave electronics developments on range techniques, high power varactor multipliers, and computer design of varactor circuits
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Monolithic Microwave Switching Matrix
Gallium arsenide integrated-circuit chip switches any of three microwave input signals to any of three output ports. Measuring 4.9 mm on side, chip contains nine field-effect transistor (FET) crosspoint switches. Housed in custom-designed package with standard connectors for easy integration into system. FET's on chip operated as passive switches and consume no static power and insignificant amounts of switching power. Chip module cascades with similar modules into large arrays handling as many as 100 inputs and 100 outputs. Applications include switching and routing vast amounts of data between computers at extremely high speed. On communications satellite, chip switches microwave signals to and from Earth stations and other satellites.
Fujikawa, Gene↗
HEMT Amplifiers and Equipment for their On-Wafer Testing
Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.
Fung, King man↗
Differential InP HEMT MMIC Amplifiers Embedded in Waveguides
Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have prohibitively low impedances. Yet another advantage afforded by the virtual ground of the differential configuration is elimination of the need for a ground plane and, hence, elimination of the need for back-side metallization of the MMIC chip. In turn, elimination of the back-side metallization simplifies fabrication, reduces parasitic capacitances, and enables mounting of the MMIC in the electric-field plane ("E-plane") of a waveguide. E-plane mounting is consistent with (and essential for the utility of) the finline configuration, in which transmission lines lie on a dielectric sheet in the middle of a broad side of the waveguide. E-plane mounting offers a combination of low loss and ease of assembly because no millimeter-wave wire bonds or transition substrates are required. Moreover, because there is no ground plane behind the MMIC, the impedance for the detrimental even (single-ended) mode is high, suppressing coupling to that mode. Still another advantage of E-plane mounting is that the fundamental waveguide mode is inherently differential, eliminating the need for a balun to excite the differential mode.
Kangaslahti, Pekka↗
Superconductivity applications for infrared and microwave devices II; Proceedings of the Meeting, Orlando, FL, Apr. 4, 5, 1991
Topics discussed include thin-film technology, microwave transmission lines and resonators, microwave devices and circuits, infrared detectors and bolometers, and superconducting junctions. Papers are presented on possible enhancement in bolometric response using free-standing film of YBa2Cu3O(x), aging and surface instability in high-Tc superconductors, epitaxial Tl2Ba2CaCu2O8 thin films on LaAlO3 and their microwave device properties, the performance of stripline resonators using sputtered YBCO films, and a coplanar waveguide microwave filter of YBa2Cu3O7. Attention is also given to the performance characteristics of Y-Ba-Cu-O microwave superconducting detectors, high-Tc bolometer developments for planetary missions, infrared detectors from YBaCuO thin films, high-temperature superconductor junction technology, and submillimeter receiver components using superconducting tunnel junctions.
Heinen, Vernon O.↗
Ultralow-Power Digital Correlator for Microwave Polarimetry
A recently developed high-speed digital correlator is especially well suited for processing readings of a passive microwave polarimeter. This circuit computes the autocorrelations of, and the cross-correlations among, data in four digital input streams representing samples of in-phase (I) and quadrature (Q) components of two intermediate-frequency (IF) signals, denoted A and B, that are generated in heterodyne reception of two microwave signals. The IF signals arriving at the correlator input terminals have been digitized to three levels (-1,0,1) at a sampling rate up to 500 MHz. Two bits (representing sign and magnitude) are needed to represent the instantaneous datum in each input channel; hence, eight bits are needed to represent the four input signals during any given cycle of the sampling clock. The accumulation (integration) time for the correlation is programmable in increments of 2(exp 8) cycles of the sampling clock, up to a maximum of 2(exp 24) cycles. The basic functionality of the correlator is embodied in 16 correlation slices, each of which contains identical logic circuits and counters (see figure). The first stage of each correlation slice is a logic gate that computes one of the desired correlations (for example, the autocorrelation of the I component of A or the negative of the cross-correlation of the I component of A and the Q component of B). The sampling of the output of the logic gate output is controlled by the sampling-clock signal, and an 8-bit counter increments in every clock cycle when the logic gate generates output. The most significant bit of the 8-bit counter is sampled by a 16-bit counter with a clock signal at 2(exp 8) the frequency of the sampling clock. The 16-bit counter is incremented every time the 8-bit counter rolls over.
Piepmeier, Jeffrey R.↗
A double-stage injection-locked oscillator for optically fed phased array antennas
In an optically fed phased array antenna system, the microwave carrier signal is transmitted via a modulated lightwave to each active T/R (transmit/receive) module, where it must be converted back to the microwave domain. Currently, efficient optical-to-microwave conversion is extremely difficult, as the detected microwave signal is weak and noisy. A novel circuit, containing a high-gain/low-noise microwave injection-locked oscillator, has been developed to improve the interface between the optical and microwave components. The circuit utilizes two FETs and a dielectric resonator, which serves as a frequency-dependent feedback element. The circuit, designed to operate at about 8 GHz, provides significant amplitude and phase noise suppression. In addition, the circuit realization is compatible with MMIC technology.
Berceli, Tibor↗
Low-noise amplifiers
Low noise amplifiers - millimeter wave circuits and waveguide microwave termination
AMPLIFIER↗
Superconducting-Cavity Accelerometer
Resonant frequency of microwave superconducting cavity sensitive to gravitation and acceleration. Sensitive accelerometer assembled by combining superconducting microwave cavity and conventional microwave semiconductor oscillator circuit. Device measures acelerations as small as 10-10 cm/S2 (10-13 g's). Also configured to measure small gradients in gravitational field of Earth.
Reinhardt, V. S.↗
MMIC devices for active phased array antennas
The use of finlines for microwave monolithic integrated circuit application in the 20 to 40 GHz frequency range. Other wave guiding structures, are also examined from a comparative point of view and some sonclusions are drawn on the basis of the results.
Mittra, R.↗
Miniature modular microwave end-to-end receiver
An end-to-end microwave receiver system contained in a single miniature hybrid package mounted on a single heatsink is presented. It includes an input end connected to a microwave receiver antenna and an output end which produces a digital count proportional to the amplitude of a signal of a selected microwave frequency band received at the antenna and corresponding to one of the water vapor absorption lines near frequencies of 20 GHz or 30 GHz. The hybrid package is on the order of several centimeters in length and a few centimeters in height and width. The package includes an L-shaped carrier having a base surface, a vertical wall extending up from the base surface and forming a corner therewith, and connection pins extending through the vertical wall. Modular blocks rest on the base surface against the vertical wall and support microwave monolithic integrated circuits on top surfaces thereof connected to the external connection pins. The modular blocks lie end-to-end on the base surface so as to be modularly removable by sliding along the base surface beneath the external connection pins away from the vertical wall.
Sukamto, Lin M.↗
Performance of a Ka-band transponder breadboard for deep-space applications
This article summarizes the design concepts applied in the development of and advanced Ka-band (34.4 GHz/32 GHz) transponder breadboard for the next generation of space communications systems applications. The selected architecture upgrades the X-band (7.2 GHz/8.4 GHz) deep-space transponder (DST) to provide Da-band up/Ka- and X-band down capability. The Ka-band transponder breadboard incorporates several state-of-the-art components, including sampling mixers, a Ka-band dielectric resonator oscillator, and microwave monolithic integrated circuits (MMICs). The MMICs that were tested in the breadboard include upconverters, downconverters, automatic gain control circuits, mixers, phase modulators, and amplifiers. The measured receiver dynamic range, tracking range, acquisition rate, static phase error, and phase jitter characteristics of the Ka-band breadboard interfaced to the advanced engineering model X-band DST are in good agreement with the expected performance. The results show a receiver tracking threshold of -149 dBm with a dynamic range of 80 dB and a downlink phase jitter of 7 deg rms. The analytical results of phase noise and Allan standard deviation are in good agreement with the experimental results.
Mysoor, N. R.↗
Ultra Small Aperture Terminal for Ka-Band SATCOM
An ultra small aperture terminal (USAT) at Ka-band frequency has been developed by Lewis Research Center (LeRC) for data rates up to 1.5 Mbps in the transmit mode and 40 Mbps in receive mode. The terminal consists of a 35 cm diameter offset-fed parabolic antenna which is attached to a solid state power amplifier and low noise amplifier. A single down converter is used to convert the Ka-band frequency to 70 MHz intermediate frequency (IF). A variable rate (9.6 Kbps to 10 Mbps) commercial modem with a standard RS-449/RS-232 interface is used to provide point-to-point digital services. The terminal has been demonstrated numerous times using the Advanced Communications Technology Satellite (ACTS) and the 4.5 in Link Evaluation Terminal (LET) in Cleveland. A conceptual design for an advanced terminal has also been developed. This advanced USAT utilizes Microwave Monolithic Integrated Circuit (MMIC) and flat plate array technologies. This terminal will be self contained in a single package which will include a 1 watt solid state amplifier (SSPA), low noise amplifier (LNA) and a modem card located behind the aperture of the array. The advanced USAT will be light weight, transportable, low cost and easy to point to the satellite. This paper will introduce designs for the reflector based and array based USAT's.
Acosta, Roberto↗
A Novel Nanoionics-Based Switch for Microwave Applications
This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic "bridge" to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of approx.0.5dB, isolation of >30dB, low voltage operation (1V), low power (approx. micro-W) and low energy (approx. nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.
Nessel, James A.↗
T/R Multi-Chip MMIC Modules for 150 GHz
Modules containing multiple monolithic microwave integrated-circuit (MMIC) chips have been built as prototypes of transmitting/receiving (T/R) modules for millimeter-wavelength radar systems, including phased-array radar systems to be used for diverse purposes that could include guidance and avoidance of hazards for landing spacecraft, imaging systems for detecting hidden weapons, and hazard-avoidance systems for automobiles. Whereas prior landing radar systems have operated at frequencies around 35 GHz, the integrated circuits in this module operate in a frequency band centered at about 150 GHz. The higher frequency (and, hence, shorter wavelength), is expected to make it possible to obtain finer spatial resolution while also using smaller antennas and thereby reducing the sizes and masses of the affected systems.
Samoska, Lorene A.↗
MMIC Amplifier Produces Gain of 10 dB at 235 GHz
The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.
Dawson, Douglas↗
MMIC Amplifiers for 90 to 130 GHz
This brief describes two monolithic microwave integrated-circuit (MMIC) amplifier chips optimized to function in the frequency range of 90 to 130 GHz, covering nearly all of F-band (90 - 140 GHz). These amplifiers were designed specifically for local-oscillator units in astronomical radio telescopes such as the Atacama Large Millimeter Array (ALMA). They could also be readily adapted for use in electronic test equipment, automotive radar systems, and communications systems that operate between 90 and 130 GHz.
Samoska, Lorene↗