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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low damping

Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization switching while enabling new types of hybrid structures or devices. Here, we have developed a new class of ultra-thin spinel structure Li 0.5 Al 1.0 Fe 1.5 O 4 (LAFO) films on MgGa 2 O 4 (MGO) substrates with: 1) perpendicular magnetic anisotropy; 2) low magnetic damping and 3) the absence of degraded or magnetic dead layers. These films have been integrated with epitaxial Pt spin source layers to demonstrate record low magnetization switching currents and high spin-orbit torque efficiencies. These LAFO films on MGO thus combine all of the desirable properties of ferromagnetic insulators with perpendicular magnetic anisotropy, opening new possibilities for spin based electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Applied-field magnetic structure and spectroscopy shifts of the effective spin-$\frac{1}{2}$ 𝑋⁢𝑌-like magnet Li 2 ⁢CoCl 4

Insulators containing chains of magnetic transition metal cations provide platforms for probing spin-$\frac{1}{2}$ dynamics and quantum critical behavior. Li 2 ⁢ CoCl 4 contains edge-sharing CoCl 6 octahedra that form chains along the crystallographic 𝑐 axis and orders antiferromagnetically at zero field, but questions remain about its applied-field magnetic structure and the Co 2+ spin state. Here, in this study, we show with neutron diffraction on a polycrystalline sample how the antialigned chains of cobalt moments begin to transition to a ferromagnetic state above 1.6 T. Further, using magnetic resonance absorption measurements and noninteracting spin models, we reveal the strongly anisotropic nature of the Co 2+ ion's 𝑋⁢𝑌-like magnetic behavior (𝑔 ∥ = 2.77 and 𝑔 ⊥ = 5.23) and its 𝐽 = $\frac{1}{2}$ ground state. We therefore supply the magnetic structures and anisotropic description needed to explore the dynamics of the field-driven magnetic phases, laying the foundation for further experimental and theoretical studies.

Riedel, Zachary W. [Univ. of Illinois at Urbana-Ch↗
DOE OSTI2023

Kondo screening in a Majorana metal

Kondo impurities provide a nontrivial probe to unravel the character of the excitations of a quantum spin liquid. In the S = 1/2 Kitaev model on the honeycomb lattice, Kondo impurities embedded in the spin-liquid host can be screened by itinerant Majorana fermions via gauge-flux binding. Here, we report experimental signatures of metallic-like Kondo screening at intermediate temperatures in the Kitaev honeycomb material α-RuCl 3 with dilute Cr 3+ (S = 3/2) impurities. The static magnetic susceptibility, the muon Knight shift, and the muon spin-relaxation rate all feature logarithmic divergences, a hallmark of a metallic Kondo effect. Concurrently, the linear coefficient of the magnetic specific heat is large in the same temperature regime, indicating the presence of a host Majorana metal. This observation opens new avenues for exploring uncharted Kondo physics in insulating quantum magnets.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Exchange-Biased Quantum Anomalous Hall Effect

The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, the QAH effect is realized in the magnetic topological insulator Cr-doped (Bi,Sb) 2 Te 3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr 2 O 3 . Through polarized neutron reflectometry (PNR), a strong exchange coupling is found between CBST and Al-Cr 2 O 3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. Further, the interfacial coupling results in an exchange-biased QAH effect. This study further demonstrates that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr 2 O 3 layer. It demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electrical and optical characterizations of spin-orbit torque

To further reduce the energy consumption in spin–orbit torque devices, it is crucial to precisely quantify the spin–orbit torque (SOT) in different materials and structures. In this work, heavy metal/ferromagnet and heavy metal/ferrimagnet heterostructures are employed as the model systems to compare the electrical and optical methods for the SOT characterization, which are based on the anomalous Hall effect and the magneto-optical Kerr effect, respectively. It is found that both methods yield the consistent SOT strength for the current-driven magnetization switching measurements and the harmonic measurements. Our results suggest that the optical method is a feasible and reliable tool to investigate SOT, which is a powerful way to develop insulator-based magnetic systems in the future.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

The exceedingly strong two-dimensional ferromagnetism in bi-atomic layer SrRuO 3 with a critical conduction transition

In recent years, few-layer or even monolayer ferromagnetic materials have drawn a great deal of attention due to the promising integration of two-dimensional (2D) magnets into next-generation spintronic devices. The SrRuO 3 monolayer is a rare example of stable 2D magnetism under ambient conditions, but only weak ferromagnetism or antiferromagnetism has been found. The bi-atomic layer SrRuO3 as another environmentally inert 2D magnetic system has been paid less attention heretofore. Here we study both the bi-atomic layer and monolayer SrRuO 3 in (SrRuO 3 ) n /(SrTiO 3 ) m (n = 1, 2) superlattices in which the SrTiO 3 serves as a non-magnetic and insulating space layer. Although the monolayer exhibits arguably weak ferromagnetism, we find that the bi-atomic layer exhibits exceedingly strong ferromagnetism with a T c of 125 K and a saturation magnetization of 1.2 μ B /Ru, demonstrated by both superconducting quantum interference device (SQUID) magnetometry and element-specific X-ray circular dichroism. Moreover, in the bi-atomic layer SrRuO 3 , we demonstrate that random fluctuations and orbital reconstructions inevitably occurring in the 2D limit are critical to the electrical transport, but are much less critical to the ferromagnetism. Our study demonstrates that the bi-atomic layer SrRuO 3 is an exceedingly strong 2D ferromagnetic oxide which has great potentials for applications of ultracompact spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Unusual dynamic susceptibility arising from soft ferromagnetic domains in MnBi 8 Te 13 and Sb-doped MnBi 2n Te 3n+1 (n = 2, 3)

MnBi$_{2n}$Te$_{3n+1}$ (MBT) is the first intrinsic magnetic topological insulator and is promising to host emergent phenomena such as quantum anomalous Hall effect. They can be made ferromagnetic by having n ≥ 4 or with Sb doping. In this work, we studied the magnetic dynamics in a few selected ferromagnetic (FM) MBT compounds, including MnBi 8 Te 13 and Sb doped MnBi$_{2n}$Te$_{3n+1}$ ($n = 2, 3)$ using AC susceptibility and magneto-optical imaging. Slow relaxation behavior is observed in all three compounds, suggesting its universality among FM MBT. We attribute the origin of the relaxation behavior to the irreversible domain movements since they only appear below the saturation fields when ferromagnetic domains form. The very soft ferromagnetic domain nature is revealed by the low-field fine-structured domains and high-field sea-urchin-shaped remanent-state domains imaged via our magneto-optical measurements. Finally, we ascribe the rare 'double-peak' behavior observed in the AC susceptibility under small DC bias fields to the very soft ferromagnetic domain formations.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Spin-based detection of terahertz and sub-terahertz electromagnetic radiation

Systems and methods for spin-based detection of electromagnetic radiation at terahertz and sub-terahertz frequencies is provided. The detector can include a heterostructure, a magnetic field generator, and an electrical circuit. The heterostructure can include a first layer formed of an antiferromagnetic material (AFM) in contact with a second layer of a heavy metal (HM) or a topological insulator. The magnetic field generator can generate a magnetic field oriented approximately parallel to an easy axis of the first layer and approximately parallel to a propagation direction of electromagnetic radiation. The circuit can be in electrical communication with the second layer. The first layer can inject a spin current into the second layer in response to receipt of electromagnetic radiation having a sub-terahertz or terahertz frequency. The second layer can convert the injected spin current into a potential difference. The circuit can be configured to output a signal corresponding to the potential difference.

Shi, Jing↗
DOE OSTI2023

Superconductivity by alloying the topological insulator SnBi 2 Te 4

Alloying indium into the topological insulator SnBi 2 Te 4 induces bulk superconductivity with critical temperatures T c up to 1.85 K and upper critical fields up to about 14 kOe. This is confirmed by electrical resistivity, heat capacity, and magnetic susceptibility measurements. The heat capacity shows a discontinuity at T c and temperature dependence below T c consistent with weak coupling BCS theory, and suggests a superconducting gap near 0.25 meV. The superconductivity is type-II and the topological surface states have been verified by photoemission. Here, a simple picture suggests analogies with the isostructural magnetic topological insulator MnBi 2 Te 4 , in which a natural heterostructure hosts complementary properties on different sublattices, and motivates new interest in this large family of compounds. The existence of both topological surface states and superconductivity in Sn 1-x In x Bi 2 Te 4 identifies these materials as promising candidates for the study of topological superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Elucidating the Role of Dimensionality on the Electronic Structure of the Van der Waals Antiferromagnet NiPS 3

Abstract The sustained interest in investigating magnetism in the 2D limit of insulating antiferromagnets is driven by the possibilities of discovering, or engineering, novel magnetic phases through layer stacking. However, due to the difficulty of directly measuring magnetic interactions in 2D antiferromagnets, it is not yet understood how intra layer magnetic interactions in insulating , strongly correlated, materials can be modified through layer proximity. Herein, the impact of reduced dimensionality in the model van der Waals antiferromagnet NiPS 3 is explored by measuring electronic excitations in exfoliated samples using Resonant Inelastic X‐ray Scattering (RIXS). The resulting spectra shows systematic broadening of NiS 6 multiplet excitations with decreasing layer count from bulk down to three atomic layers (3L). It is shown that these trends originate from a decrease in transition metal‐ligand and ligand–ligand hopping integrals, and by charge‐transfer energy evolving from Δ = 0.83 eV in the bulk to 0.37 eV in 3L NiPS 3 . Relevant intralayer magnetic exchange integrals computed from the electronic parameters exhibit a decrease in the average interaction strength with thickness. This study underscores the influence of inter layer electronic interactions on intra layer ones in insulating magnets, indicating that magnetic Hamiltonians in few‐layer insulating magnets can greatly deviate from their bulk counterparts.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High‐Efficiency Magnon‐Mediated Magnetization Switching in All‐Oxide Heterostructures with Perpendicular Magnetic Anisotropy

Abstract The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted extensive attention. One of the most promising approaches is the electrical manipulation of magnetization through electron‐mediated spin torque. However, the Joule heat generated via electron motion unavoidably causes substantial energy dissipation and potential damage to spintronic devices. Here, all‐oxide heterostructures of SrRuO 3 /NiO/SrIrO 3 are epitaxially grown on SrTiO 3 single‐crystal substrates following the order of the ferromagnetic transition metal oxide SrRuO 3 with perpendicular magnetic anisotropy, insulating and antiferromagnetic NiO, and metallic transition metal oxide SrIrO 3 with strong spin–orbit coupling. It is demonstrated that instead of the electron spin torques, the magnon torques present in the antiferromagnetic NiO layer can directly manipulate the perpendicular magnetization of the ferromagnetic layer. This magnon mechanism may significantly reduce the electron motion‐related energy dissipation from electron‐mediated spin currents. Interestingly, the threshold current density to generate a sufficient magnon current to manipulate the magnetization is one order of magnitude smaller than that in conventional metallic systems. These findings suggest a route for developing highly efficient all‐oxide spintronic devices operated by magnon current.

Zheng, Dongxing↗
DOE OSTI2025

Modulating Oxide‐Based Quantum Materials by Ion Implantation

Ion implantation has emerged as a powerful tool for manipulating and investigating oxide quantum materials, where strong electron correlations give rise to exotic phases and functionalities. This Review examines how controlled ion bombardment enables targeted modulation of structural, electronic, and magnetic properties in complex oxides. Recent advances in ion beam techniques is analyzed that provide unprecedented control over defect profiles, from point defects to extended damage cascades. In application, ion irradiation has demonstrated the ability to tune quantum phenomena including metal‐insulator transitions, magnetism, and superconductivity through selective doping, defect creation, and lattice strain. The ability to write quantum states with nanoscale precision using focused ion beams is opening new paths for quantum device fabrication. Challenges in understanding radiation damage mechanisms in strongly correlated systems is discussed, and identify opportunities for designing quantum functionality through defect‐engineering approaches. The technique's demonstrated capability to write quantum states with nanoscale precision, combined with its compatibility with existing semiconductor processing infrastructure, suggests a clear pathway for translating fundamental discoveries in quantum materials into practical technological applications.

defect engineering↗
DOE OSTI2023

Band inversion-driven warping and high valley degeneracy

Band inversion is a physical phenomenon that can warp the band structure in topological insulators, generating multiple electronic valleys for conducting carriers. However, the conditions under which band inversion induces warping are not well understood. Here, we derive two general rules that must be satisfied for band warping to occur in centrosymmetric and non-magnetic topological insulators: (1) bands must be sufficiently inverted, and (2) secondary bands must have opposite parity and be close in energy to the band edges. We chart the valley degeneracies that can emerge from band inversion in each of the 11 centrosymmetric point groups, revealing that an increase in the valley degeneracy between 2- and 48-fold is possible from band inversion. The generalized rules offer a unique band engineering approach by capitalizing on the non-trivial electronic structures of topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Coexistence of Surface Ferromagnetism and a Gapless Topological State in MnBi 2 Te 4

Surface magnetism and its correlation with the electronic structure are critical to understanding the topological surface state in the intrinsic magnetic topological insulator MnBi 2 Te 4 . Here, using static and time resolved angle-resolved photoemission spectroscopy (ARPES), we find a significant ARPES intensity change together with a gap opening on a Rashba-like conduction band. Comparison with a model simulation strongly indicates that the surface magnetism on cleaved MnBi 2 Te 4 is the same as its bulk state. Finally, the inability of surface ferromagnetism to open a gap in the topological surface state uncovers the novel complexity of MnBi 2 Te 4 that may be responsible for the low quantum anomalous Hall temperature of exfoliated MnBi 2 Te 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Doped Mott insulators in the triangular-lattice Hubbard model

Here we investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping δ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group (DMRG) method, at light hole doping δ ≲ 10%, we find a significant difference between strong and intermediate couplings. Notably, at intermediate coupling an unusual metallic state emerges, with short ranged spin correlations but long ranged spin-chirality order. Moreover, no clear Fermi surface or wave vector is observed, this chiral metal also exhibits staggered loop current, which breaks the translational symmetry. These features disappear on increasing interaction strength or on further doping. At strong coupling, the 120 degree magnetic order of the insulating magnet persists for light doping, and produces hole pockets with a well-defined Fermi surface. On further doping, δ ≈ 10%~20% SDW order and coherent hole Fermi pockets are found at both strong and intermediate couplings. At even higher doping δ ≳ 20%, the SDW order is suppressed and the spin-singlet Cooper pair correlations are simultaneously enhanced. We also briefly comment on the strong particle-hole asymmetry of the model.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Alloying vanadium in Mn Bi 2 Te 4 for robust ferromagnetic coupling and quantum anomalous Hall effect

The intrinsic antiferromagnetic (AFM) interlayer coupling in the two-dimensional magnetic topological insulator MnBi 2 Te 4 places a restriction on realizing a stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Through density functional theory calculations, we demonstrate the possibility of tuning the AFM coupling to the ferromagnetic coupling in Mn Bi 2 Te 4 films by alloying about 50% V with Mn. As a result, the QAHE can be achieved without alternation with the even or odd septuple layers. This provides a practical strategy to get a robust QAHE in ultrathin Mn Bi 2 Te 4 films, rendering them attractive for technological innovations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Perspective–The Elusive Quantum Anomalous Hall Effect in MnBi 2 Te 4 : Materials

Observation of the quantum anomalous Hall effect (QAHE) in MnBi 2 Te 4 flakes is one of the most exciting results in the study of the intrinsic magnetic topological insulator MnBi 2 Te 4 and related compounds. However, reproducing this fascinating result has been found to be challenging. The quality of starting MnBi 2 Te 4 single crystals is believed to be the key factor. An interesting and important question to address is what is the right quality to enable the QAHE. In this perspective, we present possible approaches to tuning the magnetic and topological properties of MnBi 2 Te 4 by using lattice imperfections, strain, stacking sequence, and interactions between the substrate and flakes/films. It is of critical importance to eventually identify the factor(s) responsible for the realization of QAHE. This paper is part of the JES/JSS Joint Focus Issue In Honor of John Goodenough: A Centenarian Milestone.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Crystal orientation dependence of interfacial magnetic anisotropy at heavy-metal/magnetic-garnet interfaces

Ferrimagnetic insulators capped with a heavy metal are becoming an increasingly interesting materials system in spintronics due to their unique ability for electrical manipulation and detection of magnetic states and spin textures via spin-orbit torques. The ability to engineer magnetic anisotropy is a powerful tool for tuning the recently discovered phenomena in these bilayers such as electrical switching or the stabilization of topological magnetic textures. Here, we observe large shifts in the magnetic anisotropy in Tm 3 Fe 5 O 13 and Y 3 Fe 5 O 12 thin films due to heavy-metal capping layers, which strongly depends on the orientation of the substrate and therefore the orientation of the epitaxial films. This work suggests large Rashba spin-orbit coupling at the metal/ferrimagneticinsulator interface, which can be engineered in spintronic devices that utilize spin-orbit torques for electrical control of the magnetization in magnetic insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗